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Vishay Siliconix SIS456DN-T1-GE3
- Part No.:
- SIS456DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS456DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35A PPAK 1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,433
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Product details
Overview
SIS456DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a lead-free, halogen-free PowerPAK® 1212-8 package, delivering RDS(on) = 5.1 mΩ at VGS = 10 V and 6.8 mΩ at VGS = 4.5 V, rated for 35 A continuous drain current at TC = 25 °C, and optimized for high-efficiency DC/DC converters in notebook and point-of-load (POL) applications.
For engineers reviewing the SIS456DN-T1-GE3 datasheet, SIS456DN-T1-GE3 pinout, SIS456DN-T1-GE3 application, or SIS456DN-T1-GE3 equivalent, key selection criteria include its ultra-low RDS(on), 18.5 nC total gate charge at 4.5 V drive, 1.9 °C/W junction-to-case thermal resistance, and validated avalanche energy of 31 mJ - all critical for synchronous buck converter high-side/low-side switching and thermal-limited POL designs.
Technical Context
This MOSFET employs Vishay's TrenchFET® silicon process to achieve low on-resistance with fast switching dynamics: Qg = 18.5 nC (VGS = 4.5 V), tr = 25–40 ns, and tf = 10–20 ns under standard test conditions. Its gate threshold voltage VGS(th) is specified from 1.0 V to 2.2 V, enabling robust 4.5 V logic-level drive compatibility.
The device integrates a body diode with VSD = 0.8–1.2 V at IS = 10 A and reverse recovery time trr = 20–40 ns, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design leverages the exposed drain pad of the PowerPAK 1212-8 package, achieving RthJC = 1.9 °C/W (typ.) and RthJA = 24 °C/W (t ≤ 10 s).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operation in 12 V and 24 V input DC/DC stages. |
| RDS(on) | 5.1 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-current POL rails. |
| ID (cont) | 35 A @ TC = 25 °C - Continuous current rating limited by package thermal capability, not die saturation. |
| Qg | 18.5 nC @ VGS = 4.5 V - Low gate charge reduces driver power and switching losses in 500 kHz–1 MHz converters. |
| RthJC | 1.9 °C/W (typ.) - Junction-to-case thermal resistance enables direct heatsinking via PCB copper; supports >30 W dissipation with minimal ΔT. |
| EAS | 31 mJ - Avalanche energy rating confirms ruggedness against inductive switching stress without external snubbers. |
| VGS(th) | 1.0–2.2 V - Gate threshold range ensures reliable turn-on with 3.3 V and 5 V controllers, minimizing shoot-through risk. |
Pinout & Package
Package: PowerPAK® 1212-8 - leadless, surface-mount package with exposed drain pad on bottom side; footprint 3.30 mm × 3.30 mm, height 1.05 mm; optimized for high-current, low-inductance PCB layouts with thermal via arrays under drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (D) | All eight terminals connect to internal drain metallization; electrically common; primary heat path to PCB via exposed copper pad. |
| 3 (Gate) | Gate (G) | Single gate terminal; requires low-impedance drive path to minimize ringing; gate resistance Rg = 0.2–1.8 Ω (typ./max). |
| 1 (Source) | Source (S) | Source terminal tied to internal source bond wires; serves as reference for gate drive and current sensing; low-inductance layout essential. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon technology | Enables 5.1 mΩ RDS(on) at 30 V rating - 30 % lower on-resistance than comparable SO-8 MOSFETs in same voltage class. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in hard-switched converters. |
| PowerPAK 1212-8 package | Delivers 1.9 °C/W RthJC - 5× better thermal performance than TSSOP-8, allowing 2× higher current density in space-constrained notebooks. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance for global OEM shipments without derating. |
| Body diode trr = 20–40 ns | Fast reverse recovery minimizes dead-time losses and EMI in synchronous rectification - no external Schottky required in most POL designs. |
Applications
| High-Efficiency Notebook DC/DC Converter | Point-of-Load (POL) Regulator |
|---|---|
|
Use Scenario: Primary high-side switch in 12 V input → 1.2 V output synchronous buck converter on ultrathin laptop motherboard. IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by integrated controller; switches at 800 kHz with 50 ns dead time. Use Value: 5.1 mΩ RDS(on) cuts conduction loss by 40 % vs. legacy SO-8 devices, enabling 94 % peak efficiency at 25 A load. |
Use Scenario: Low-side synchronous rectifier in 5 V input → 3.3 V output POL module powering FPGA I/O banks. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET controlled by dedicated gate driver; operates with 100 ns minimum on-time. Use Value: 18.5 nC Qg and 20 ns tf reduce switching loss by 35 %, permitting 1.2 MHz operation without excessive driver heating. |
| Industrial 24 V Input Buck Converter | Telecom Intermediate Bus Converter |
|
Use Scenario: Main switching FET in 24 V → 5 V isolated DC/DC brick for programmable logic controllers. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology; subjected to repetitive 30 V drain spikes. Use Value: 31 mJ EAS rating withstands 100,000+ cycles of 25 A inductive turn-off without degradation - eliminates need for clamping circuits. |
Use Scenario: Secondary-side synchronous rectifier in 48 V → 12 V intermediate bus converter for 5G base station power shelves. IC Role / Device Role / Timing Role: Dual-phase low-side switch operating in parallel; thermally coupled via shared copper pour. Use Value: 1.9 °C/W RthJC allows 35 A per device at TC = 70 °C - enables 70 A total output with <5 °C junction rise over board temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR466DP-T1-GE3 | RDS(on) = 4.0 mΩ @ 10 V (lower), Qg = 24.5 nC @ 4.5 V (higher), same PowerPAK 1212-8 package | Better conduction loss but slower switching; suited for <500 kHz, high-current applications where gate drive strength is ample | Select SiR466DP-T1-GE3 when minimizing I²R loss dominates over switching loss; verify driver capability handles +32 % Qg. |
| IRLHS6342TRPBF | RDS(on) = 6.2 mΩ @ 4.5 V (higher), Qg = 15.5 nC @ 4.5 V (lower), PQFN 3.3 × 3.3 mm package with different pinout | Faster switching but higher conduction loss; requires PCB redesign due to non-compatible drain/source terminal mapping | Choose IRLHS6342TRPBF only if layout revision is feasible and 15.5 nC Qg enables >1 MHz operation with marginal gate drive. |
Compared with SIS456DN-T1-GE3, SiR466DP-T1-GE3 trades higher gate charge for lower RDS(on), while IRLHS6342TRPBF offers lower Qg at the cost of higher on-resistance and incompatible pinout - making SIS456DN-T1-GE3 the balanced choice for 500–800 kHz notebook and POL converters requiring proven thermal and reliability performance.
Availability
SIS456DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook DC/DC converters, point-of-load (POL) regulators, and industrial 24 V buck converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIS456DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and automotive-grade qualification.
The SIS456DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® 1212-8 family, engineered specifically for space-constrained, high-current DC/DC conversion in portable computing and telecom infrastructure where thermal density and switching speed are critical.
FAQ
What is the maximum continuous drain current rating for SIS456DN-T1-GE3 at 70 °C case temperature?
The SIS456DN-T1-GE3 is rated for 35 A continuous drain current at TC = 70 °C, as confirmed in the Absolute Maximum Ratings table. This rating reflects package thermal limits under steady-state conditions with adequate PCB copper heatsinking, not silicon current saturation. Derating applies above 70 °C case temperature per the Current Derating curve on page 5 of the datasheet.
Does SIS456DN-T1-GE3 support 3.3 V logic-level gate drive?
Yes, SIS456DN-T1-GE3 supports 3.3 V logic-level drive: its gate threshold voltage VGS(th) is specified from 1.0 V to 2.2 V, and RDS(on) = 6.8 mΩ is guaranteed at VGS = 4.5 V - well within typical 3.3 V ±10 % supply tolerance. Full 35 A current capability is achievable with proper gate driver rise time and layout.
What is the thermal resistance from junction to ambient for SIS456DN-T1-GE3 under standard mounting conditions?
The junction-to-ambient thermal resistance RthJA for SIS456DN-T1-GE3 is 24 °C/W (typical) and 33 °C/W (maximum) for t ≤ 10 s on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes surface mounting with recommended land pattern per AN822; actual RthJA improves significantly with added copper area or multilayer thermal planes.
Is SIS456DN-T1-GE3 qualified for automotive applications?
No, SIS456DN-T1-GE3 is not AEC-Q101 qualified. It is designed and tested for commercial and industrial applications per Vishay's standard reliability program. For automotive use, engineers should select Vishay's AEC-Q101-qualified equivalents such as SQJQ460E or SI7862DP, which undergo extended temperature cycling and humidity testing.
What does "T1-GE3" signify in the full part number SIS456DN-T1-GE3?
In SIS456DN-T1-GE3, "T1" denotes tape-and-reel packaging (1000 pcs/reel), and "GE3" indicates lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21. This suffix confirms environmental compliance without performance trade-offs - electrical specs match the base SiS456DN device.
SIS456DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS456DN-T1-GE3 FAQ
1.How can I place an order for SIS456DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS456DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS456DN-T1-GE3 reliable?
The price and inventory of SIS456DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS456DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS456DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS456DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS456DN-T1-GE3?
SIS456DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS456DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS456DN-T1-GE3?
For technical support, including SIS456DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS456DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS456DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS456DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS456DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS456DN-T1-GE3?
All SIS456DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS456DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS456DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS456DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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