My Inquiry
My Account
Vishay Siliconix SIS4604DN-T1-GE3
- Part No.:
- SIS4604DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS4604DN-T1-GE3.pdf
- Description:
- N-CHANNEL 60 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:9,520
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIS4604DN-T1-GE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 7.9 mΩ (typ.) at VGS = 10 V, Qg = 14.5 nC (typ.), and 44.4 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SIS4604DN-T1-GE3 datasheet, SIS4604DN-T1-GE3 pinout, SIS4604DN-T1-GE3 application, or SIS4604DN-T1-GE3 equivalent, this page provides verified thermal resistance (RthJC = 3.0 °C/W), body diode recovery (trr = 23 ns), avalanche rating (EAS = 20 mJ), gate charge profile, and PowerPAK 1212-8 terminal mapping to support layout, thermal design, and replacement evaluation.
Technical Context
This MOSFET employs trench-based silicon architecture with tuned charge characteristics: RDS(on) × Qoss FOM is minimized for hard-switched converters, and RDS(on) × Qg FOM is optimized for high-frequency operation. It features 100% Rg and UIS testing per production lot.
The device supports gate drive voltages up to ±20 V, exhibits VGS(th) = 2–4 V (25 °C), and integrates a robust intrinsic body diode with VSD = 0.81 V (typ.) at IS = 5 A and trr = 23 ns - enabling efficient reverse-recovery behavior in synchronous buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage compatible with 48 V input bus and 36 V automotive systems |
| RDS(on) max @ VGS = 10 V | 9.5 mΩ - enables <1.5 W conduction loss at 40 A, critical for high-current DC/DC output stages |
| Qg typ. | 14.5 nC - low gate charge reduces driver power demand and switching losses in 300–1000 kHz converters |
| ID cont. @ TC = 25 °C | 44.4 A - supports high-power motor drive and load switch applications without external heatsink |
| RthJC max. | 3.7 °C/W - allows direct thermal path to PCB copper or heatsink, enabling >25 W dissipation at ΔT = 90 °C |
| EAS | 20 mJ - rated single-pulse avalanche energy ensures ruggedness during inductive turn-off transients |
| trr | 23 ns - fast body diode recovery minimizes shoot-through risk and improves efficiency in synchronous rectification |
Pinout & Package
Package: PowerPAK® 1212-8 - leadless, surface-mount, thermally enhanced package with exposed drain paddle on bottom side; dimensions 3.3 mm × 3.3 mm × 1.04 mm (max); RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four drain terminals connected to exposed bottom paddle - primary thermal and current path to PCB ground plane |
| 4 | Gate (G) | Single gate terminal located adjacent to source pins - enables compact gate loop layout and low-inductance drive |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers best-in-class RDS(on) × Qg and RDS(on) × Qoss figures-of-merit for high-frequency power conversion |
| 100% Rg and UIS tested | Ensures gate resistance consistency and avalanche ruggedness across all production units - no screening required |
| Exposed drain paddle | Provides low-impedance thermal path to PCB; RthJC = 3.0 °C/W enables high-power density without discrete heatsinks |
| Body diode with trr = 23 ns | Reduces reverse recovery losses and EMI in synchronous rectifiers, especially in 12 V–48 V output stages |
| Lead (Pb)-free and halogen-free | Complies with JEDEC J-STD-609 Category 1a and RoHS Directive 2011/65/EU for industrial and automotive use |
Applications
| Synchronous Rectifier | Primary-Side Switch |
|---|---|
|
Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., 48 V to 12 V telecom PSU). IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diode to improve efficiency by 2–4 % at full load. Use Value: RDS(on) = 7.9 mΩ and trr = 23 ns minimize conduction + recovery losses, enabling >95 % efficiency at 500 kHz. |
Use Scenario: High-side switch in non-isolated buck converter for server VRM or GPU power delivery. IC Role / Device Role / Timing Role: Primary power switch handling 30–45 A continuous current with fast turn-on/turn-off timing. Use Value: Qg = 14.5 nC and td(on)/tr = 11 ns/4.5 ns enable clean 1 MHz switching with minimal driver overhead. |
| Motor Drive Switch | Load Switch / Circuit Protection |
|
Use Scenario: Half-bridge leg in 24 V BLDC motor controller for industrial automation. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switching element with integrated body diode for freewheeling. Use Value: 44.4 A ID rating and EAS = 20 mJ withstand motor back-EMF spikes and short-circuit events without failure. |
Use Scenario: Hot-swap or inrush-limited power rail switch in telecom line card or storage subsystem. IC Role / Device Role / Timing Role: Controlled power-path MOSFET with low on-resistance and fast fault response. Use Value: RDS(on) = 9.5 mΩ limits voltage drop to <450 mV at 45 A, while 100 % UIS test ensures reliability during overcurrent events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 11.5 mΩ @ 10 V; Qg = 22 nC; SO-8 package; higher RthJA (62 °C/W) | Lower current rating (30 A) and slower switching limit use in >500 kHz converters | Preferred where SO-8 footprint compatibility is mandatory and thermal budget permits higher losses |
| DMN6070LSD-13 | RDS(on) = 7.2 mΩ @ 10 V; Qg = 19.5 nC; PowerDI 5060 package; RthJC = 4.5 °C/W | Higher gate charge increases driver loss; larger footprint than PowerPAK 1212-8 | Selected when higher avalanche energy (EAS = 32 mJ) is prioritized over switching speed and board area |
Compared with IRF7470PBF and DMN6070LSD-13, the SIS4604DN-T1-GE3 delivers superior RDS(on) × Qg FOM and lowest thermal resistance in its class - making it optimal for space-constrained, high-frequency, high-current applications where thermal headroom and switching efficiency are critical.
Availability
SIS4604DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for SIS4604DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIS4604DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family - engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies.
FAQ
What is the maximum junction temperature rating for the SIS4604DN-T1-GE3?
The SIS4604DN-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table and validated across thermal transient impedance curves. The device is designed for sustained operation at TJ = 150 °C under appropriate thermal management, such as adequate PCB copper area or heatsinking. Derating begins above TC = 70 °C per the current derating curve on page 5 of the datasheet.
Does the SIS4604DN-T1-GE3 have a specified gate threshold voltage range?
Yes, the SIS4604DN-T1-GE3 specifies VGS(th) = 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA. This range is measured and guaranteed per the Electrical Specifications table. The VGS(th) temperature coefficient is –7.1 mV/°C, meaning threshold voltage decreases linearly with rising temperature - a key factor in gate drive design stability across ambient conditions.
Is the SIS4604DN-T1-GE3 suitable for avalanche operation?
Yes, the SIS4604DN-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy EAS = 20 mJ at L = 0.1 mH. This capability is documented in the Absolute Maximum Ratings table and supported by the Safe Operating Area (SOA) curve on page 4. It enables reliable operation during inductive turn-off transients in motor drives and DC/DC converters without external snubbers.
What is the thermal resistance from junction to case (RthJC) for the SIS4604DN-T1-GE3?
The SIS4604DN-T1-GE3 has a typical junction-to-case (drain) thermal resistance RthJC = 3.0 °C/W and maximum RthJC = 3.7 °C/W, as stated in the Thermal Resistance Ratings table. This value reflects conduction through the exposed drain paddle to the PCB - not ambient air - and is critical for calculating die temperature rise under high-power conditions using TJ = TC + PD × RthJC.
How many source and drain terminals does the SIS4604DN-T1-GE3 PowerPAK 1212-8 package have?
The SIS4604DN-T1-GE3 in PowerPAK 1212-8 has four source terminals (pins 1–4) and four drain terminals (pins 5–8), with pin 4 serving dual function as both source and gate connection point in top-view layout. This multi-terminal configuration reduces parasitic inductance and improves current distribution - confirmed in the "Top View" and "Bottom View" diagrams on page 1 of the datasheet.
SIS4604DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.6A (Ta), 44.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 960 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 33.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS4604DN-T1-GE3 FAQ
1.How can I place an order for SIS4604DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS4604DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS4604DN-T1-GE3 reliable?
The price and inventory of SIS4604DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS4604DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS4604DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS4604DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS4604DN-T1-GE3?
SIS4604DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS4604DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS4604DN-T1-GE3?
For technical support, including SIS4604DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS4604DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS4604DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS4604DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS4604DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS4604DN-T1-GE3?
All SIS4604DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS4604DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS4604DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS4604DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIS4604DN-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
