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Vishay Siliconix SIS4608DN-T1-GE3
- Part No.:
- SIS4608DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS4608DN-T1-GE3.pdf
- Description:
- N-CHANNEL 60 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:5,635
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Product details
Overview
SIS4608DN-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 0.0118 Ω at VGS = 10 V, Qg = 8.9 nC (typ.), and continuous drain current ID = 35.7 A at TC = 25 °C - optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIS4608DN-T1-GE3 datasheet, SIS4608DN-T1-GE3 pinout, SIS4608DN-T1-GE3 application, or SIS4608DN-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100 % Rg and UIS testing, and suitability for primary-side switching in compact, thermally constrained power stages.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low gate charge and output capacitance trade-offs, with Ciss = 740 pF and Coss = 195 pF at VDS = 30 V. Its dynamic performance is characterized by td(on) = 11 ns and tf = 4 ns under VGEN = 7.5 V drive conditions.
The device features a robust body diode with VSD = 0.82 V (typ.) at IS = 5 A and fast reverse recovery (trr = 20 ns typ., Qrr = 12 nC), enabling efficient operation in hard-switched and synchronous rectifier topologies without external Schottky assistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage for primary-side switch or high-side load switch in 48 V input systems |
| RDS(on) max @ VGS = 10 V | 0.0118 Ω - enables <1.2 W conduction loss at 10 A, critical for thermal management in dense PCB layouts |
| Qg typ. | 8.9 nC - reduces gate drive power and switching losses in high-frequency (>500 kHz) DC/DC converters |
| ID continuous @ TC = 25 °C | 35.7 A - supports high-current power stages without forced air cooling when mounted on 1" × 1" FR4 |
| RthJC max | 4.6 °C/W - allows direct thermal coupling to heatsink or copper pour for junction temperature control below 150 °C |
| Body diode VSD typ. | 0.82 V @ IS = 5 A - lowers forward conduction loss during dead-time in synchronous buck converters |
| Qrr typ. | 12 nC - minimizes reverse recovery energy dissipation and EMI generation in hard-switched applications |
Pinout & Package
PowerPAK® 1212-8 single-package leadless construction with exposed drain paddle on bottom side; dimensions: 3.3 mm × 3.3 mm × 1.04 mm (max); RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to exposed copper paddle - primary thermal path to PCB ground plane |
| 4 | Gate (G) | Single gate terminal located adjacent to source pins - enables short, low-inductance gate loop layout |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers best-in-class RDS(on) × Qg FOM of 0.105 Ω·nC - directly reduces total switching + conduction loss |
| 100 % Rg tested | Ensures gate resistance ≤ 2.6 Ω - guarantees predictable turn-on/turn-off timing and dV/dt immunity |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to IAS = 15 A - improves system reliability |
| Low Qoss / RDS(on) ratio | Optimized for ZVS/ZCS soft-switching topologies - reduces capacitive turn-on loss in resonant converters |
| Exposed drain paddle | Provides <1.5 K/W effective thermal interface to PCB - enables >20 W power dissipation with 2 oz copper and thermal vias |
Applications
| Synchronous Buck Converter | Primary-Side Switch in Flyback |
|---|---|
Use Scenario: High-efficiency 12 V → 1.2 V point-of-load converter operating at 1 MHz with 30 A output. IC Role / Device Role: Low-side synchronous rectifier MOSFET replacing Schottky diode. Use Value: Reduces conduction loss by 65 % vs. 40 V Schottky, enabling >95 % efficiency at full load with no heatsink. |
Use Scenario: 24 V input isolated flyback supplying 5 V/3 A for industrial I/O module. IC Role / Device Role: Primary-side switching MOSFET driving transformer primary winding. Use Value: Low Qg and fast switching minimize driver loss and allow >200 kHz operation, shrinking transformer size by 30 %. |
| Motor Drive Half-Bridge | Hot-Swap Load Switch |
Use Scenario: 24 V BLDC motor gate driver stage controlling 10 A peak phase current. IC Role / Device Role: High-side or low-side switch in half-bridge configuration. Use Value: Fast tf = 4 ns and low Coss suppress shoot-through risk and reduce switching transition time by 22 %. |
Use Scenario: Inrush-limited 48 V supply to FPGA board with 8 A steady-state load. IC Role / Device Role: Single N-channel load switch with integrated gate driver support. Use Value: RDS(on) = 0.0118 Ω limits dropout to <95 mV at 8 A - avoids brownout during hot-plug insertion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0135 Ω @ 10 V; Qg = 12.5 nC; SO-8 package | Higher gate charge increases driver loss; larger SO-8 footprint limits power density | Prefer SIS4608DN-T1-GE3 for space-constrained, high-frequency designs requiring lowest RDS(on) × Qg. |
| DMN6070LSD-13 | RDS(on) = 0.0125 Ω @ 10 V; Qg = 10.2 nC; PowerDI 3333 package | Higher RthJA (50 °C/W vs. 38 °C/W max) limits power handling on small PCBs | Choose SIS4608DN-T1-GE3 when thermal performance on 1" × 1" FR4 is critical for continuous 30 A operation. |
Compared with IRF7470PBF and DMN6070LSD-13, the SIS4608DN-T1-GE3 delivers superior figure-of-merit (RDS(on) × Qg = 0.105 Ω·nC), lower thermal resistance, and smaller footprint - making it optimal for high-power-density DC/DC and motor drive applications where efficiency and board area are tightly constrained.
Availability
SIS4608DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and automotive-grade programs.
Supply support for SIS4608DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIS4608DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-efficiency power conversion in server, telecom, and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for SIS4608DN-T1-GE3 at case temperature of 70 °C?
The SIS4608DN-T1-GE3 supports 28.6 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to reduced thermal headroom and must be validated against actual PCB layout, copper area, and airflow conditions. The SIS4608DN-T1-GE3 maintains RDS(on) stability across this range, ensuring predictable conduction loss in thermally demanding environments.
Does SIS4608DN-T1-GE3 have integrated ESD protection on the gate?
The SIS4608DN-T1-GE3 does not include integrated gate ESD protection diodes. Its gate-source leakage IGSS is rated at ≤100 nA at ±20 V, and gate-source voltage must remain within ±20 V per Absolute Maximum Ratings. System-level ESD protection - such as series gate resistors and TVS clamps - is required before assembly. This design choice preserves low Rg and high-speed switching integrity in the SIS4608DN-T1-GE3.
Can SIS4608DN-T1-GE3 be used in avalanche-rated applications?
Yes - the SIS4608DN-T1-GE3 is 100 % UIS (unclamped inductive switching) tested with single-pulse avalanche current IAS = 15 A and energy EAS = 11.25 mJ. These ratings apply under specified test conditions (L = 0.1 mH, TJ = 25 °C). For sustained avalanche operation, thermal limits and pulse repetition must be verified per application; the SIS4608DN-T1-GE3 datasheet provides safe operating area curves supporting this use case.
What is the recommended minimum PCB pad layout for SIS4608DN-T1-GE3?
Vishay Application Note 826 specifies recommended minimum pads for the PowerPAK® 1212-8 package: 0.094" × 0.088" (2.39 mm × 2.235 mm) for drain paddle, with 0.039" (0.99 mm) solder mask opening and ≥8 thermal vias (0.3 mm diameter, 0.6 mm pitch) under the paddle. Source and gate pads follow standard 0.026" pitch land patterns. Adhering to these ensures reliable solder joint formation and optimal thermal transfer for the SIS4608DN-T1-GE3.
Is SIS4608DN-T1-GE3 suitable for linear-mode (active region) operation?
The SIS4608DN-T1-GE3 is not characterized or guaranteed for extended linear-mode operation. Its Safe Operating Area (SOA) curve in the datasheet defines only pulsed operation (10 ms to DC), with current limited by RDS(on) at high VDS. Continuous linear operation risks thermal runaway due to positive temperature coefficient of RDS(on); the SIS4608DN-T1-GE3 is optimized for switching applications, not analog pass devices.
SIS4608DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.4A (Ta), 35.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.3W (Ta), 27.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS4608DN-T1-GE3 FAQ
1.How can I place an order for SIS4608DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS4608DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS4608DN-T1-GE3 reliable?
The price and inventory of SIS4608DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS4608DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS4608DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS4608DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS4608DN-T1-GE3?
SIS4608DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS4608DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS4608DN-T1-GE3?
For technical support, including SIS4608DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS4608DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS4608DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS4608DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS4608DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS4608DN-T1-GE3?
All SIS4608DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS4608DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS4608DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS4608DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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