Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS4608LDN-T1-GE3

Name: SIS4608LDN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS4608LDN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIS4608LDN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS4608LDN-T1-GE3.pdf

Description:: N-CHANNEL 60 V (D-S) MOSFET POWE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,985

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIS4608LDN-T1-GE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 11.5 mΩ at V_GS = 10 V and 15.3 mΩ at V_GS = 4.5 V, with 7 nC typical gate charge and 36.2 A continuous drain current - optimized for high-efficiency DC/DC converters and synchronous rectification.

For engineers reviewing the SIS4608LDN-T1-GE3 datasheet, SIS4608LDN-T1-GE3 pinout, SIS4608LDN-T1-GE3 application, or SIS4608LDN-T1-GE3 equivalent, this device offers verified thermal performance (R_thJC = 3.7 °C/W), 100% UIS tested ruggedness, and leadless PowerPAK 1212-8 packaging suited for compact, high-power-density board layouts.

Technical Context

This MOSFET employs trench-based silicon architecture to minimize R_DS(on) × Q_g and R_DS(on) × Q_oss figures of merit, enabling fast switching with low conduction and capacitive losses. Its gate threshold voltage (1–3 V) supports 4.5 V logic-level drive while maintaining robust noise immunity.

The device integrates a low-V_SD body diode (0.81–1.1 V at 5 A) with 19–38 ns reverse recovery time and 9–18 nC Q_rr, supporting efficient bidirectional current handling in synchronous buck topologies and motor drive half-bridges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum drain-source blocking voltage for primary-side switch operation in 48 V input DC/DC systems
R_DS(on) @ 10 V	11.5 mΩ max - enables ≤ 4.2 W conduction loss at 20 A, critical for thermally constrained PCBs
R_DS(on) @ 4.5 V	15.3 mΩ max - ensures full enhancement with standard 5 V microcontroller GPIO or PWM drivers
Q_g	7 nC typ. - reduces gate drive power and enables >1 MHz switching in high-frequency POL converters
I_D (continuous)	36.2 A @ T_C = 25 °C - supports high-current load switches without external heatsinking on 1" × 1" FR4
R_thJC	3.7 °C/W typ. - allows direct thermal coupling to copper planes or heatsinks for sustained 20+ W dissipation
V_GS(th)	1–3 V - provides reliable turn-on margin above logic thresholds while minimizing shoot-through risk in bridge configurations

Pinout & Package

PowerPAK® 1212-8 is a surface-mount, leadless, thermally enhanced package measuring 3.3 mm × 3.3 mm × 1.04 mm, with exposed drain paddle on bottom side for optimal heat transfer and eight coplanar terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5	Gate (G)	Single gate terminal with 0.7–2.6 Ω gate resistance - compatible with standard MOSFET drivers without added series resistance
6, 7, 8	Drain (D)	Three drain terminals connected to internal exposed paddle - provide low-inductance, high-current return path to ground plane

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers industry-leading R_DS(on) × Q_g FOM of ~0.081 Ω·nC, reducing total switching loss by ≥15% vs. prior-gen equivalents
100% UIS tested	Guarantees avalanche energy handling up to 11.25 mJ - eliminates need for external snubbers in inductive load switching
Low Q_oss	12.4 pF typical - minimizes turn-off loss and improves light-load efficiency in hard-switched converters
Enhanced body diode	trr = 19–38 ns and Q_rr = 9–18 nC - reduces reverse recovery stress and EMI in synchronous rectifier mode
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Synchronous Buck Converter	Motor Drive Half-Bridge
Use Scenario: High-efficiency 12 V → 1.2 V point-of-load conversion in server VRMs and AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 15.3 mΩ R_DS(on) at 4.5 V enables >95% efficiency at 20 A output while minimizing thermal footprint.	Use Scenario: 24 V BLDC motor control in industrial actuators with trapezoidal commutation. IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge, driven by gate driver IC with 1 Ω series resistance. Use Value: 100% UIS rating and 15 A pulsed diode current support robust operation during phase current reversal and regeneration.
Primary-Side Switch	Load Switch Protection
Use Scenario: Isolated flyback converter for industrial IoT sensor power supplies (24–48 V input). IC Role / Device Role / Timing Role: Primary-side switching transistor with 60 V V_DS margin over reflected output voltage spikes. Use Value: 60 V rating and 11.5 mΩ R_DS(on) allow compact transformer design and <1.5 W conduction loss at 10 A peak.	Use Scenario: Hot-swap and inrush current limiting for 12 V backplane power distribution in telecom equipment. IC Role / Device Role / Timing Role: Single-pole load switch controlled via microcontroller GPIO with soft-start capability. Use Value: Low 15.3 mΩ on-resistance limits voltage drop to <150 mV at 10 A, preserving downstream rail regulation.

Synchronous Buck Converter

Motor Drive Half-Bridge

Use Scenario: High-efficiency 12 V → 1.2 V point-of-load conversion in server VRMs and AI accelerators.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 15.3 mΩ R_DS(on) at 4.5 V enables >95% efficiency at 20 A output while minimizing thermal footprint.

Use Scenario: 24 V BLDC motor control in industrial actuators with trapezoidal commutation.

IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge, driven by gate driver IC with 1 Ω series resistance.

Use Value: 100% UIS rating and 15 A pulsed diode current support robust operation during phase current reversal and regeneration.

Primary-Side Switch

Load Switch Protection

Use Scenario: Isolated flyback converter for industrial IoT sensor power supplies (24–48 V input).

IC Role / Device Role / Timing Role: Primary-side switching transistor with 60 V V_DS margin over reflected output voltage spikes.

Use Value: 60 V rating and 11.5 mΩ R_DS(on) allow compact transformer design and <1.5 W conduction loss at 10 A peak.

Use Scenario: Hot-swap and inrush current limiting for 12 V backplane power distribution in telecom equipment.

IC Role / Device Role / Timing Role: Single-pole load switch controlled via microcontroller GPIO with soft-start capability.

Use Value: Low 15.3 mΩ on-resistance limits voltage drop to <150 mV at 10 A, preserving downstream rail regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 12.5 mΩ @ 10 V; Q_g = 10.5 nC; same PowerPAK 1212-8 package	Higher gate charge increases drive loss at >500 kHz; better suited for lower-frequency, higher-current designs	Select when prioritizing lower R_DS(on) over ultra-fast switching - trade-off favors thermal headroom over switching speed
IRLML6344TRPBF	R_DS(on) = 22 mΩ @ 4.5 V; SO-8 package; 4.3 A I_D; no UIS rating	Limited current and no avalanche testing restrict use to low-power, non-inductive loads	Choose only for cost-sensitive, low-current (<5 A), non-ruggedized applications where layout space permits SO-8

Compared with SiR626DP-T1-GE3 and IRLML6344TRPBF, the SIS4608LDN-T1-GE3 delivers superior R_DS(on) × Q_g balance and certified ruggedness - making it the preferred choice for high-frequency, high-reliability DC/DC and motor drive designs where both efficiency and fault tolerance are critical.

Availability

SIS4608LDN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and embedded OEM programs.

Supply support for SIS4608LDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIS4608LDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion and motor control where low R_DS(on) × Q_g and robust avalanche capability are essential.

FAQ

What is the maximum continuous drain current rating for SIS4608LDN-T1-GE3 at 70 °C case temperature?

The SIS4608LDN-T1-GE3 supports 28.9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations under steady-state conduction and must be validated against actual board layout, copper area, and airflow conditions. The SIS4608LDN-T1-GE3 datasheet confirms this value is measured on a 1" × 1" FR4 board per footnote b.

Does SIS4608LDN-T1-GE3 have a specified body diode reverse recovery time?

Yes, the SIS4608LDN-T1-GE3 specifies a body diode reverse recovery time (t_rr) of 19–38 ns at I_F = 10 A, dI/dt = 100 A/μs, and T_J = 25 °C. This parameter is critical for synchronous rectifier performance and is directly measured - not derived - as confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet.

Is SIS4608LDN-T1-GE3 suitable for 4.5 V logic-level gate drive?

Yes, the SIS4608LDN-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 15.3 mΩ max at V_GS = 4.5 V and I_D = 10 A. Its gate threshold voltage range (1–3 V) ensures strong enhancement and low on-resistance using standard 5 V microcontrollers or gate drivers - no level-shifting required.

What is the thermal resistance from junction to case (R_thJC) for SIS4608LDN-T1-GE3?

The SIS4608LDN-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 3.7 °C/W, with a maximum of 4.6 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to the drain paddle and is measured under steady-state conditions - enabling accurate junction temperature estimation when mounted to a heatsink or internal copper plane.

Are there any special soldering requirements for the PowerPAK 1212-8 package of SIS4608LDN-T1-GE3?

Yes, the PowerPAK 1212-8 package used by SIS4608LDN-T1-GE3 requires reflow soldering per Vishay's profile (doc#73257); manual soldering with an iron is not recommended due to its leadless construction and exposed copper paddle. Peak temperature must not exceed 260 °C, and the end of the drain terminal is un-plated copper - a solder fillet there is neither guaranteed nor required for functional interconnection.

SIS4608LDN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 12.6A (Ta), 36.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 905 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 27.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS4608LDN-T1-GE3 FAQ

1.How can I place an order for SIS4608LDN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS4608LDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS4608LDN-T1-GE3 reliable?

The price and inventory of SIS4608LDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS4608LDN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS4608LDN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS4608LDN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS4608LDN-T1-GE3?

SIS4608LDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS4608LDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS4608LDN-T1-GE3?

For technical support, including SIS4608LDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS4608LDN-T1-GE3 requirements.

6.How does Aetrix verify that SIS4608LDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS4608LDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS4608LDN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS4608LDN-T1-GE3?

All SIS4608LDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS4608LDN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS4608LDN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS4608LDN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …