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Vishay Siliconix SIS472ADN-T1-GE3
- Part No.:
- SIS472ADN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS472ADN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 24A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,653
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Product details
Overview
SIS472ADN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET optimized for high-side synchronous rectifier operation in notebook CPU core power stages. It delivers 24 A continuous drain current at TC = 25 °C, features RDS(on) of 8.5 mΩ at VGS = 10 V and 10.5 mΩ at VGS = 4.5 V, and is housed in the thermally enhanced PowerPAK® 1212-8 leadless package.
For engineers reviewing the SIS472ADN-T1-GE3 datasheet, SIS472ADN-T1-GE3 pinout, SIS472ADN-T1-GE3 application, or SIS472ADN-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 12.8 nC total gate charge, 100 % Rg and UIS tested reliability, and junction-to-case thermal resistance of 3.6 °C/W - all critical for high-efficiency, space-constrained DC-DC converter designs.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve ultra-low on-resistance while maintaining robust avalanche capability (EAS = 5 mJ, IAS = 10 A). Its gate threshold voltage (VGS(th) = 1.2–2.4 V) and low Qg/Qgd ratio support fast switching with minimal Miller-induced shoot-through risk in synchronous buck topologies.
The PowerPAK® 1212-8 package integrates an exposed drain pad for direct thermal conduction to the PCB, enabling a steady-state RthJC of 3.6 °C/W and RthJA of 29 °C/W (t ≤ 10 s). Its 3.3 mm × 3.3 mm footprint and 1.05 mm height are optimized for thin, high-density notebook VRMs where thermal management and board area are tightly constrained.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 5 V and 12 V input rails in notebook CPU core supplies. |
| RDS(on) @ VGS = 10 V | 8.5 mΩ max - Enables <1 W conduction loss at 24 A, critical for >90 % efficiency in high-current phases. |
| RDS(on) @ VGS = 4.5 V | 10.5 mΩ max - Ensures stable on-resistance under typical 5 V gate drive from controller ICs without level-shifting. |
| Qg (typ.) | 12.8 nC at VGS = 4.5 V - Low gate charge reduces driver power loss and supports >1 MHz switching in multi-phase VRMs. |
| ID (continuous) | 24 A at TC = 25 °C - Supports high-current single-phase or parallel-phase CPU core power delivery with adequate margin. |
| RthJC | 3.6 °C/W typical - Allows direct heat transfer from die to PCB copper, enabling compact thermal design without external heatsinks. |
| Body diode VSD | 0.75–1.1 V at IS = 5 A - Low forward voltage minimizes reverse-recovery losses during dead-time conduction in synchronous rectification. |
Pinout & Package
Package: PowerPAK® 1212-8 - 3.30 mm × 3.30 mm × 1.05 mm leadless surface-mount package with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (D) | All eight terminals connect to internal drain metallization; bottom-side exposed copper pad serves as primary thermal and current path to PCB. |
| 3 (Gate) | Gate (G) | Terminal 3 is dedicated gate input; requires low-inductance layout to minimize ringing and ensure clean turn-on/turn-off. |
| 1 (Source) | Source (S) | Terminal 1 is source connection; used as reference node for gate drive and current sensing in high-side configuration. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 8.5 mΩ RDS(on) at 30 V rating - delivers higher current density than planar MOSFETs in same footprint. |
| Optimized for high-side synchronous rectification | Low Qgd/Qg ratio and tight VGS(th) distribution reduce timing uncertainty and improve light-load efficiency in buck converters. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world VRM transients. |
| PowerPAK® 1212-8 package | Delivers 3.6 °C/W RthJC - enables >2× power dissipation vs. TSSOP-8 at same board area, critical for thin-profile notebooks. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for global OEM production without material compliance rework. |
Applications
| Notebook CPU Core VRM | High-Density Point-of-Load Converter |
|---|---|
Use Scenario: Primary high-side switch in multiphase buck converter supplying Intel/AMD mobile processors (e.g., Core i7-U series). IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 300–1000 kHz with 4.5 V gate drive from integrated PWM controller. Use Value: 10.5 mΩ RDS(on) at 4.5 V ensures <0.5 W conduction loss per phase at 15 A, directly improving VRM efficiency and reducing thermal load on motherboard. |
Use Scenario: Compact 12 V to 1.0 V conversion for FPGA or ASIC power domains in telecom and industrial edge modules. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch in space-constrained 2-layer PCB designs requiring minimal thermal relief. Use Value: PowerPAK® 1212-8's 3.6 °C/W RthJC allows full 24 A rating with only 2 cm² of 2-oz copper, eliminating need for thermal vias or external heatsinks. |
| Thin-Profile Laptop Power Stage | Multi-Phase Notebook GPU VRM |
Use Scenario: High-side FET in ultra-thin (<16 mm chassis) laptops where component height must be ≤1.1 mm. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by dual-output controller with adaptive dead-time control. Use Value: 1.05 mm profile meets mechanical stack-up constraints while 12.8 nC Qg supports efficient 800 kHz operation without excessive gate driver loss. |
Use Scenario: Parallel high-side switch in 3-phase GPU VRM for discrete graphics cards in gaming laptops. IC Role / Device Role / Timing Role: Current-sharing MOSFET with matched RDS(on) and thermal impedance across phases to balance dynamic load currents. Use Value: Tight RDS(on) tolerance (±15 %) and uniform thermal resistance enable <5 % inter-phase current imbalance at 50 A total load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 7.0 mΩ @ 10 V (lower), Qg = 34 nC @ 10 V (higher), PowerPAK® 8x8 package (larger footprint) | Better conduction loss but slower switching; suited for lower-frequency, higher-current VRMs where board area is available. | Select when prioritizing <0.8 W conduction loss over switching loss and thermal density; not drop-in due to larger 8x8 package. |
| IRLHS6242TRPBF | RDS(on) = 11.5 mΩ @ 4.5 V (higher), Qg = 11.2 nC @ 4.5 V (slightly lower), PQFN 3.3x3.3 mm package (same footprint) | Marginally higher RDS(on) increases conduction loss by ~15 % at 15 A; identical thermal interface enables direct PCB reuse. | Acceptable alternative if 10.5 → 11.5 mΩ shift is tolerable; same pinout and package allow layout retention but require efficiency validation. |
Compared with SiR872DP-T1-GE3, SIS472ADN-T1-GE3 offers superior switching efficiency in high-frequency VRMs due to lower Qg, while versus IRLHS6242TRPBF it provides tighter RDS(on) control and guaranteed UIS testing - both critical for reliable notebook CPU core operation under transient load steps.
Availability
SIS472ADN-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, high-density point-of-load converters, and thin-profile laptop power stages requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for SIS472ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIS472ADN-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current synchronous rectification in space- and thermally constrained computing power supplies.
FAQ
What is the maximum continuous drain current rating for SIS472ADN-T1-GE3 at 70 °C case temperature?
The SIS472ADN-T1-GE3 supports 24 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 28 W maximum power dissipation at TC = 25 °C, maintaining safe junction temperature under sustained high-current operation in thermally managed notebook VRM layouts.
Does SIS472ADN-T1-GE3 support 4.5 V gate drive in high-side synchronous rectifier configurations?
Yes, SIS472ADN-T1-GE3 is explicitly optimized for high-side synchronous rectifier operation with 4.5 V gate drive. Its RDS(on) is guaranteed at 10.5 mΩ max under VGS = 4.5 V, ID = 7 A conditions, and its low gate threshold (1.2–2.4 V) ensures full enhancement without requiring bootstrap or charge-pump circuitry.
What is the thermal resistance from junction to case (RthJC) for SIS472ADN-T1-GE3, and how is it measured?
The SIS472ADN-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 3.6 °C/W under steady-state conditions, with a maximum of 4.5 °C/W. This value is measured with the device mounted on an infinite heat sink, characterizing the intrinsic thermal path from die to the exposed drain pad - the primary thermal interface to the PCB.
Is SIS472ADN-T1-GE3 suitable for use in automotive infotainment power supplies?
No, SIS472ADN-T1-GE3 is not qualified for automotive applications. Its datasheet specifies an operating junction temperature range of –55 to +150 °C but does not include AEC-Q101 qualification, PPAP documentation, or automotive-grade reliability testing. It is designed and validated exclusively for commercial computing and industrial power applications.
How does the PowerPAK® 1212-8 package of SIS472ADN-T1-GE3 improve thermal performance compared to SO-8?
The PowerPAK® 1212-8 package of SIS472ADN-T1-GE3 achieves a typical RthJC of 3.6 °C/W - over 5× better than standard SO-8 (≈20 °C/W) and 10× better than TSSOP-8 (≈52 °C/W). This is enabled by the exposed drain pad directly bonded to PCB copper, minimizing thermal interface layers and allowing efficient heat spreading without additional heatsinks.
SIS472ADN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1515 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 28W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS472ADN-T1-GE3 FAQ
1.How can I place an order for SIS472ADN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS472ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS472ADN-T1-GE3 reliable?
The price and inventory of SIS472ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS472ADN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS472ADN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS472ADN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS472ADN-T1-GE3?
SIS472ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS472ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS472ADN-T1-GE3?
For technical support, including SIS472ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS472ADN-T1-GE3 requirements.
6.How does Aetrix verify that SIS472ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS472ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS472ADN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS472ADN-T1-GE3?
All SIS472ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS472ADN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS472ADN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS472ADN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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