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Vishay Siliconix SIS472BDN-T1-GE3
- Part No.:
- SIS472BDN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS472BDN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 15.3A/38.3A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,181
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Product details
Overview
SIS472BDN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8 package, delivering RDS(on) = 7.5 mΩ at VGS = 10 V and 12.4 mΩ at VGS = 4.5 V, with 38.3 A continuous drain current at TC = 25 °C, optimized for high-efficiency DC/DC power supplies and battery protection circuits.
For engineers reviewing the SIS472BDN-T1-GE3 datasheet, SIS472BDN-T1-GE3 pinout, SIS472BDN-T1-GE3 application, or SIS472BDN-T1-GE3 equivalent, this device offers verified thermal performance (RthJC = 5 °C/W), 100% Rg and UIS tested reliability, and lead-free/halogen-free compliance per Vishay's material categorization standard.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve low gate charge (Qg = 6.9 nC typ. at VGS = 4.5 V) and fast switching (td(on) = 11 ns, tf = 5 ns at VGEN = 10 V), enabling high-frequency synchronous rectification in POL converters. Its Crss/Ciss ratio of 0.034–0.068 supports stable gate drive under hard-switching conditions.
The device integrates a robust body diode with trr = 19 ns (typ.), Qrr = 7 nC (typ.), and VSD = 0.77 V (typ. at IS = 5 A), making it suitable for freewheeling paths in buck converters where reverse recovery loss minimization is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V input rails and 12 V intermediate bus systems. |
| RDS(on) @ VGS = 10 V | 7.5 mΩ max - Enables <1.5 W conduction loss at 15 A, supporting high-current computing power rails without forced air cooling. |
| RDS(on) @ VGS = 4.5 V | 12.4 mΩ max - Ensures reliable turn-on with 5 V or 3.3 V logic-level gate drivers in telecom POL modules. |
| Qg | 6.9 nC typ. @ 4.5 V - Reduces gate drive power and enables >1 MHz switching in compact DC/DC designs. |
| ID (continuous) | 38.3 A @ TC = 25 °C - Supports high-density power delivery in server VRMs and GPU power stages. |
| RthJC | 5 °C/W typical - Allows direct thermal coupling to heatsinks or PCB copper planes for efficient junction-to-case heat transfer. |
| Body diode VSD | 0.77 V typ. @ IS = 5 A - Low forward drop reduces freewheeling losses during dead-time conduction in synchronous buck topologies. |
Pinout & Package
Package: PowerPAK® 1212-8 (3.3 mm × 3.3 mm, 0.97–1.12 mm height), leadless, bottom-side thermal pad exposed for enhanced thermal performance. RoHS-compliant, halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications. |
| 5 | Gate (G) | Single gate input with Rg = 0.4–3.2 Ω; optimized for low-noise, stable switching with standard gate drivers. |
| 6, 7, 8 | Drain (D) | Three parallel drain terminals connected to internal die drain metallization; provide low-inductance path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers lowest RDS(on) × Qg figure-of-merit in its voltage class, improving efficiency in high-frequency switch-mode power supplies. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress in real-world loads. |
| PowerPAK® 1212-8 package | Provides 2× lower RthJA vs. SO-8 and eliminates leadframe inductance-critical for minimizing voltage spikes in fast-switching POLs. |
| Lead (Pb)-free and halogen-free | Complies with IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS Directive 2011/65/EU without derating. |
Applications
| Server VRM Power Stage | Telecom Point-of-Load Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency synchronous buck converter supplying CPU/GPU core voltage (0.8–1.2 V) in data center servers. IC Role / Device Role: Lower-side synchronous rectifier MOSFET, conducting during low-side switch interval with minimal conduction loss. Use Value: 7.5 mΩ RDS(on) at 10 V gate drive reduces I²R loss by >30% vs. legacy 12 mΩ devices, directly improving VRM full-load efficiency. |
Use Scenario: 48 V-to-12 V intermediate bus converter feeding downstream POL modules in 5G base station power architecture. IC Role / Device Role: Primary-side high-side switch in active clamp forward or LLC resonant topology. Use Value: 6.9 nC Qg at 4.5 V enables clean gate drive with low-power controllers, reducing driver IC cost and board space. |
| Battery Protection Circuit | Industrial DC/DC Module |
|
Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion battery packs (max 8.4 V) used in portable medical devices. IC Role / Device Role: Load switch placed between battery and system load, controlled by protection IC to disconnect faulted loads. Use Value: 12.4 mΩ RDS(on) at 4.5 V ensures full turn-on with standard protection IC gate outputs, eliminating need for external level shifters. |
Use Scenario: Isolated 24 V input, 5 V output DC/DC module for industrial PLC I/O modules requiring high reliability and wide temperature operation. IC Role / Device Role: Secondary-side synchronous rectifier in forward or flyback topology, replacing Schottky diodes. Use Value: Body diode trr = 19 ns and Qrr = 7 nC minimize switching loss and EMI during zero-voltage switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | Higher RDS(on) = 10.5 mΩ @ 10 V; larger PowerPAK® 1212-8S package (same footprint but thicker); higher Qg = 12.5 nC. | Targeted at higher-current (>50 A) applications where thermal margin outweighs switching speed; less optimal for >1 MHz POLs. | Select when higher pulse current rating (IDM = 120 A) and improved avalanche energy (EAS = 12 mJ) are required over ultra-low Qg. |
| IRF7759L2TRPBF | Same RDS(on) spec (7.5 mΩ @ 10 V) but higher Qg = 10.2 nC; SO-8 package with higher RthJA (62 °C/W). | Legacy design-in for boards using SO-8 footprints; unsuitable for new high-density layouts due to inferior thermal and switching performance. | Choose only for drop-in replacement on existing SO-8-based designs; avoid for new designs targeting >500 kHz or >30 A continuous current. |
Compared with SiR872DP-T1-GE3 and IRF7759L2TRPBF, the SIS472BDN-T1-GE3 provides the best balance of low Qg, low RDS(on), and superior thermal resistance-making it the preferred choice for next-generation high-frequency, high-density DC/DC power stages.
Availability
SIS472BDN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC power supplies, telecom POL converters, and battery protection circuits requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIS472BDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.
The SIS472BDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion in servers, telecom infrastructure, and portable power systems.
FAQ
What is the maximum continuous drain current rating for SIS472BDN-T1-GE3 at 70 °C case temperature?
The SIS472BDN-T1-GE3 supports 30.6 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal constraints while maintaining TJ ≤ 150 °C. The SIS472BDN-T1-GE3 achieves this with its low RthJC of 5 °C/W, enabling effective heat transfer to the PCB or heatsink under sustained load.
Does SIS472BDN-T1-GE3 support logic-level gate drive?
Yes, the SIS472BDN-T1-GE3 is fully characterized at VGS = 4.5 V, with RDS(on) = 12.4 mΩ max and guaranteed turn-on behavior down to 1.2 V threshold voltage. This makes the SIS472BDN-T1-GE3 compatible with 3.3 V and 5 V microcontroller GPIOs and dedicated gate drivers without level-shifting circuitry.
What is the thermal resistance from junction to ambient for SIS472BDN-T1-GE3 under standard mounting conditions?
Under standard test conditions (1 in² 2 oz copper pad on FR4), the SIS472BDN-T1-GE3 has RthJA = 31 °C/W typical and 39 °C/W maximum. When mounted on minimum copper, RthJA rises to 130 °C/W-so proper PCB layout with thermal vias and copper pour is essential to realize the SIS472BDN-T1-GE3's full thermal capability.
Is SIS472BDN-T1-GE3 suitable for avalanche-rated applications?
Yes, the SIS472BDN-T1-GE3 is rated for single-pulse avalanche energy EAS = 5 mJ and single-pulse avalanche current IAS = 10 A (L = 0.1 mH). These values are validated per JEDEC standards and confirm the SIS472BDN-T1-GE3's ability to withstand unclamped inductive switching events common in motor drives and relay control circuits.
What is the gate-to-source leakage current specification for SIS472BDN-T1-GE3?
The SIS472BDN-T1-GE3 specifies gate-to-source leakage IGSS ≤ ±100 nA at VGS = +20 V and –16 V, measured at TJ = 25 °C. This low leakage ensures stable gate bias in high-impedance drive circuits and prevents unintended turn-on in standby modes-critical for battery-powered systems using the SIS472BDN-T1-GE3 as a load switch.
SIS472BDN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.3A (Ta), 38.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21.5 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 19.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS472BDN-T1-GE3 FAQ
1.How can I place an order for SIS472BDN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS472BDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS472BDN-T1-GE3 reliable?
The price and inventory of SIS472BDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS472BDN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS472BDN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS472BDN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS472BDN-T1-GE3?
SIS472BDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS472BDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS472BDN-T1-GE3?
For technical support, including SIS472BDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS472BDN-T1-GE3 requirements.
6.How does Aetrix verify that SIS472BDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS472BDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS472BDN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS472BDN-T1-GE3?
All SIS472BDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS472BDN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS472BDN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS472BDN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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