Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS472DN-T1-GE3

Name: SIS472DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS472DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIS472DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS472DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 20A PPAK1212-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:17,574

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIS472DN-T1-GE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® Power MOSFET optimized for high-side synchronous rectifier operation in notebook CPU core power stages. It delivers 20 A continuous drain current at T_C = 25 °C, exhibits R_DS(on) of 8.9 mΩ at V_GS = 10 V and 12.4 mΩ at V_GS = 4.5 V, and features 9.8 nC total gate charge for fast switching with low drive loss.

For engineers reviewing the SIS472DN-T1-GE3 datasheet, SIS472DN-T1-GE3 pinout, SIS472DN-T1-GE3 application, or SIS472DN-T1-GE3 equivalent, key selection considerations include its PowerPAK® 1212-8 package thermal performance, 100 % UIS and R_g tested reliability, and suitability for high-efficiency DC-DC converter high-side switches where low conduction loss and controlled turn-on/turn-off timing are critical.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance in a compact leadless package. Its gate threshold voltage (1.2–2.5 V) and steep transconductance (49 S typical) support robust turn-on with standard 4.5 V or 10 V logic-level drivers.

The device is characterized for high-side synchronous rectification, with body diode parameters-V_SD = 0.85–1.2 V at I_S = 10 A and t_rr = 14–28 ns-optimized to minimize reverse recovery loss during commutation in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 5 V–12 V input DC-DC stages with margin against transient overshoot.
R_DS(on) @ 10 V	8.9 mΩ - Low conduction loss enabling <1.5 W dissipation at 20 A, reducing thermal load in space-constrained notebook VRMs.
R_DS(on) @ 4.5 V	12.4 mΩ - Ensures usable on-resistance with 5 V gate drive, supporting compatibility with common PWM controller outputs.
Q_g (Typ.)	9.8 nC - Enables fast switching with moderate gate driver strength; reduces switching loss in high-frequency (>300 kHz) applications.
I_D (Cont.)	20 A @ T_C = 25 °C - Package-limited current rating; requires proper PCB copper area for thermal management per PowerPAK® 1212-8 guidelines.
R_thJC	3.6 °C/W (typ.) - Ultra-low junction-to-case thermal resistance enables efficient heat transfer to PCB ground plane, critical for thin-profile computing designs.
V_GS(th)	1.2–2.5 V - Threshold range ensures reliable turn-on with 3.3 V or 5 V logic while minimizing shoot-through risk in half-bridge configurations.

Pinout & Package

Package: PowerPAK® 1212-8 - leadless, surface-mount package with exposed drain pad on bottom side for direct thermal path to PCB. Dimensions: 3.30 mm × 3.30 mm × 1.05 mm (L × W × H). Thermal performance exceeds SO-8 and TSSOP-8 by >20× in junction-to-ambient resistance under identical board conditions.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All eight terminals connect internally to the large exposed drain pad; provides low-inductance, high-current path and primary thermal conduction path to PCB.
3 (Source)	Source (S)	Terminal 3 is the dedicated source connection; used for current return and gate drive reference in high-side configuration.
4 (Gate)	Gate (G)	Terminal 4 is the isolated gate input; requires careful layout to minimize ringing due to low gate resistance (0.2–2.4 Ω) and high C_iss (997 pF).

Key Features

Feature	Design Value
TrenchFET® Technology	Enables 8.9 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint-reducing conduction loss by >30 % vs. comparable SO-8 MOSFETs in same current class.
Optimized for High-Side Sync Rectification	Body diode t_rr = 14–28 ns and Q_rr = 5–10 nC minimize reverse recovery energy loss during synchronous FET commutation in buck converters.
100 % R_g Tested	Guarantees gate resistance between 0.2–2.4 Ω, ensuring consistent switching speed and predictable gate drive requirements across production lots.
100 % UIS Tested	Validates ruggedness against unclamped inductive switching events up to I_AS = 21 A and E_AS = 22 mJ-critical for reliability in CPU VRM load transients.
Halogen-Free & RoHS Compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; supports environmentally compliant manufacturing without compromising thermal or electrical performance.

Applications

Notebook CPU Core VRM	High-Efficiency Point-of-Load Converter
Use Scenario: Primary high-side switch in multiphase buck converter supplying dynamic current to Intel/AMD mobile processors (e.g., Core i7-U series). IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 300–600 kHz with precise dead-time control to prevent shoot-through. Use Value: 8.9 mΩ R_DS(on) at 10 V reduces conduction loss by ~0.35 W vs. 12 mΩ alternatives at 15 A, directly improving VRM efficiency and thermal headroom in ultrabook chassis.	Use Scenario: High-current output stage in server motherboard memory regulator delivering 25–40 A to DDR4/DDR5 modules. IC Role / Device Role / Timing Role: High-side FET in interleaved buck topology; leverages low Q_g (9.8 nC) for clean gate transitions under high dV/dt conditions. Use Value: 3.6 °C/W R_thJC allows full 20 A current capability with minimal heatsinking-enabling single-layer PCB routing and eliminating need for external thermal vias in cost-sensitive designs.
Thin-Profile Industrial SMPS	Automotive Infotainment DC-DC Stage
Use Scenario: Compact 12 V–3.3 V step-down supply in fanless industrial HMIs where height <1.1 mm is mandatory. IC Role / Device Role / Timing Role: High-side switch in fixed-frequency synchronous buck; benefits from PowerPAK® 1212-8's 1.05 mm profile and low R_thJA (29 °C/W typ.). Use Value: 40 % smaller footprint than TSSOP-8 enables dense layout in 12 mm × 12 mm power section; thermal rise of only 4.8 °C above board at 2 W simplifies thermal design.	Use Scenario: 5 V–1.2 V core supply for automotive-grade SoCs in infotainment head units operating across -40 °C to +105 °C ambient. IC Role / Device Role / Timing Role: High-side FET rated for 150 °C junction temperature; uses V_GS(th) stability over temperature to maintain safe turn-on margin in wide-range environments. Use Value: Guaranteed R_DS(on) ≤12.4 mΩ at V_GS = 4.5 V and T_J = 125 °C ensures stable efficiency across full automotive temperature range without derating.

Notebook CPU Core VRM

High-Efficiency Point-of-Load Converter

Use Scenario: Primary high-side switch in multiphase buck converter supplying dynamic current to Intel/AMD mobile processors (e.g., Core i7-U series).

IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 300–600 kHz with precise dead-time control to prevent shoot-through.

Use Value: 8.9 mΩ R_DS(on) at 10 V reduces conduction loss by ~0.35 W vs. 12 mΩ alternatives at 15 A, directly improving VRM efficiency and thermal headroom in ultrabook chassis.

Use Scenario: High-current output stage in server motherboard memory regulator delivering 25–40 A to DDR4/DDR5 modules.

IC Role / Device Role / Timing Role: High-side FET in interleaved buck topology; leverages low Q_g (9.8 nC) for clean gate transitions under high dV/dt conditions.

Use Value: 3.6 °C/W R_thJC allows full 20 A current capability with minimal heatsinking-enabling single-layer PCB routing and eliminating need for external thermal vias in cost-sensitive designs.

Thin-Profile Industrial SMPS

Automotive Infotainment DC-DC Stage

Use Scenario: Compact 12 V–3.3 V step-down supply in fanless industrial HMIs where height <1.1 mm is mandatory.

IC Role / Device Role / Timing Role: High-side switch in fixed-frequency synchronous buck; benefits from PowerPAK® 1212-8's 1.05 mm profile and low R_thJA (29 °C/W typ.).

Use Value: 40 % smaller footprint than TSSOP-8 enables dense layout in 12 mm × 12 mm power section; thermal rise of only 4.8 °C above board at 2 W simplifies thermal design.

Use Scenario: 5 V–1.2 V core supply for automotive-grade SoCs in infotainment head units operating across -40 °C to +105 °C ambient.

IC Role / Device Role / Timing Role: High-side FET rated for 150 °C junction temperature; uses V_GS(th) stability over temperature to maintain safe turn-on margin in wide-range environments.

Use Value: Guaranteed R_DS(on) ≤12.4 mΩ at V_GS = 4.5 V and T_J = 125 °C ensures stable efficiency across full automotive temperature range without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	Higher V_DS (40 V), larger R_DS(on) (11.5 mΩ @ 10 V), same PowerPAK® 1212-8 package.	Better suited for 19 V input adapters or 24 V industrial rails where 30 V margin is insufficient.	Select when system input voltage exceeds 15 V or transient immunity >35 V is required; trade-off is +29 % conduction loss at 15 A.
IRF7759L2TRPBF	Same V_DS (30 V), higher R_DS(on) (14.5 mΩ @ 10 V), SO-8 package with higher R_thJC (20 °C/W).	Legacy-compatible replacement where SO-8 footprint is fixed and thermal budget allows ~1.5 W extra loss.	Choose only if redesigning PCB is not feasible; expect ~30 % higher junction temperature rise and reduced current capability at same board area.

Compared with SiR872DP-T1-GE3 and IRF7759L2TRPBF, the SIS472DN-T1-GE3 offers the lowest R_DS(on) and best thermal resistance in its voltage class, making it optimal for high-density, high-efficiency notebook and PoL applications where board space and thermal headroom are constrained.

Availability

SIS472DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, high-efficiency point-of-load converters, and thin-profile industrial SMPS requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SIS472DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIS472DN-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency synchronous rectification in space- and thermally-constrained computing and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SIS472DN-T1-GE3 at 70 °C case temperature?

The SIS472DN-T1-GE3 is rated for 20 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design per Vishay's PowerPAK® 1212-8 mounting guidelines. At this condition, R_DS(on) remains ≤12.4 mΩ with V_GS = 4.5 V, ensuring stable conduction performance in high-temperature environments. The SIS472DN-T1-GE3 maintains this current capability without derating down to T_C = 25 °C.

Does SIS472DN-T1-GE3 support 3.3 V gate drive in high-side synchronous rectifier applications?

The SIS472DN-T1-GE3 has a gate threshold voltage (V_GS(th)) range of 1.2–2.5 V, making it compatible with 3.3 V logic-level gate drive. However, R_DS(on) increases significantly below V_GS = 4.5 V-data shows 12.4 mΩ at 4.5 V but no guaranteed value at 3.3 V. For reliable high-side operation, 4.5 V or higher gate drive is recommended to ensure full enhancement and minimize conduction loss. The SIS472DN-T1-GE3 is not characterized for guaranteed on-state performance at 3.3 V.

What is the thermal resistance from junction to ambient (R_thJA) for SIS472DN-T1-GE3 on a standard FR4 board?

The SIS472DN-T1-GE3 has a typical R_thJA of 29 °C/W and maximum of 36 °C/W when mounted on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions (single-sided copper, 1 oz, no internal planes). With optimized PCB layout-including extended drain pad copper and internal ground planes-R_thJA can be reduced further. The SIS472DN-T1-GE3 achieves substantially lower R_thJA than SO-8 or TSSOP-8 packages due to its PowerPAK® 1212-8 construction.

Is SIS472DN-T1-GE3 qualified for automotive applications per AEC-Q101?

No, the SIS472DN-T1-GE3 is not AEC-Q101 qualified. It is designed and tested for commercial and industrial applications, with an operating junction temperature range of -55 °C to +150 °C. While it meets RoHS and halogen-free requirements, Vishay does not list AEC-Q101 qualification for this part number in its official documentation or datasheet (Document Number 67307, Rev. A). For automotive infotainment use, system-level validation is required, and the SIS472DN-T1-GE3 should not be assumed qualified without explicit AEC-Q101 certification.

How is the gate resistance (R_g) of SIS472DN-T1-GE3 verified, and why does it matter?

The SIS472DN-T1-GE3 undergoes 100 % R_g testing during production, with guaranteed values of 0.2–2.4 Ω at 1 MHz. This verification ensures consistent gate drive dynamics across all units-critical for predictable turn-on delay (9–18 ns), rise time (9–18 ns), and EMI behavior in high-frequency synchronous buck converters. Tight R_g control minimizes lot-to-lot variation in switching loss and gate driver power consumption. The SIS472DN-T1-GE3's tested R_g enables accurate SPICE modeling and eliminates need for external gate resistors in many designs.

SIS472DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 997 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 28W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS472DN-T1-GE3 FAQ

1.How can I place an order for SIS472DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS472DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS472DN-T1-GE3 reliable?

The price and inventory of SIS472DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS472DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS472DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS472DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS472DN-T1-GE3?

SIS472DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS472DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS472DN-T1-GE3?

For technical support, including SIS472DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS472DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS472DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS472DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS472DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS472DN-T1-GE3?

All SIS472DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS472DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS472DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS472DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …