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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS478DN-T1-GE3

Name: SIS478DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS478DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS478DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS478DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 12A PPAK1212-8

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Product details

Overview

SIS478DN-T1-GE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® Power MOSFET in PowerPAK 1212-8 package, with R_DS(on) = 0.020 Ω at V_GS = 10 V, 8 A; Q_g = 3.6 nC at V_GS = 4.5 V; and 100 % UIS tested - optimized for notebook PC system power and load switch applications.

For engineers reviewing the SIS478DN-T1-GE3 datasheet, SIS478DN-T1-GE3 pinout, SIS478DN-T1-GE3 application, or SIS478DN-T1-GE3 equivalent, key selection criteria include low gate charge for fast switching in high-frequency DC/DC converters, ultra-low R_DS(on) at 4.5 V drive for efficient 5 V logic-level control, and PowerPAK 1212-8's 2.4 °C/W junction-to-case thermal resistance for compact thermal design.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its 30 V V_DS rating and 12 A continuous drain current (T_C = 25 °C) support mid-voltage load switching in portable computing power rails.

The device integrates 100 % R_g testing and 100 % UIS (unclamped inductive switching) validation, ensuring robustness under transient overcurrent conditions. Its gate threshold voltage range (1.2–2.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic drivers without external level shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with margin for transients in notebook system power.
R_DS(on) @ V_GS = 10 V	0.020 Ω - enables <160 mW conduction loss at 8 A, critical for thermally constrained PCB layouts.
R_DS(on) @ V_GS = 4.5 V	0.030 Ω - ensures full enhancement with 5 V microcontroller GPIOs, eliminating need for gate driver ICs.
Q_g @ V_GS = 4.5 V	3.6 nC - reduces switching energy and gate drive power, supporting >1 MHz operation in point-of-load regulators.
T_J max	150 °C - allows sustained operation in high-ambient environments like laptop chassis near CPU/GPU zones.
R_thJC	6.5 °C/W (typ.) - enables direct heat transfer from die to PCB copper, achieving 4.8 °C rise above board at 2 W dissipation.
Package	PowerPAK 1212-8 - 3.3 mm × 3.3 mm footprint, 40 % smaller than TSSOP-8, with exposed drain pad for thermal performance.

Pinout & Package

PowerPAK 1212-8 is a leadless surface-mount package with an exposed drain pad on the bottom side. The top-side terminals are arranged in an 8-pin configuration: pins 1–4 are source (S), pin 5 is gate (G), and pins 6–8 are drain (D). The package height is 1.05 mm, enabling ultra-thin notebook designs.

Pin/Terminal	Circuit Role	Design Meaning
1–4 (S)	Source	Four parallel source connections reduce source inductance and improve current sharing in high-di/dt switching.
5 (G)	Gate	Single gate terminal with 0.5–4.8 Ω gate resistance - compatible with standard logic-level drivers without added series resistance.
6–8 (D)	Drain	Three drain terminals tied to large bottom-side exposed pad - provides low-inductance, high-current path to PCB ground plane.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.020 Ω R_DS(on) at 10 V in 3.3 mm × 3.3 mm footprint - 2× die area vs. TSOP-6, enabling higher current density.
100 % UIS tested	Guarantees survival of 10 mJ single-pulse avalanche energy - eliminates need for external snubbers in inductive load switching.
100 % R_g tested	Ensures gate resistance between 0.5–4.8 Ω - prevents oscillation and enables predictable turn-on/turn-off timing in high-speed circuits.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance for global notebook OEM shipments.
Exposed drain pad	Provides 2.4 °C/W junction-to-case thermal resistance - allows PCB copper to act as primary heatsink, reducing need for thermal vias.

Applications

Notebook System Power	USB-C Load Switch
Use Scenario: Main 5 V/3.3 V system rail distribution in ultrabook motherboards, where space and thermal headroom are severely limited. IC Role / Device Role: High-side load switch controlling power delivery to memory, I/O controllers, and peripheral subsystems. Use Value: 0.030 Ω R_DS(on) at 4.5 V enables <120 mW loss at 2 A, minimizing local heating and simplifying thermal management.	Use Scenario: Hot-swap protection and power sequencing for USB-C PD ports in thin-and-light laptops. IC Role / Device Role: Low-side or high-side eFuse replacement with integrated overcurrent and thermal shutdown capability. Use Value: 100 % UIS rating handles 10 mJ inductive kickback during cable insertion, preventing latch-up or failure without external clamping.
GPU Core Voltage Sequencing	SSD Power Gate
Use Scenario: Controlled ramp-up of GPU core voltage (V_core) during boot, requiring precise timing and low-loss switching. IC Role / Device Role: Pre-regulator switch enabling soft-start and sequencing coordination with PMIC outputs. Use Value: 3.6 nC Q_g at 4.5 V allows clean, jitter-free turn-on with 10 kΩ pull-up, meeting tight ±100 µs sequencing windows.	Use Scenario: Isolating NVMe SSD power domain during sleep states to meet Intel Modern Standby (S0ix) leakage targets. IC Role / Device Role: Low-leakage power gate placed between buck converter output and SSD V_DD input. Use Value: 1 µA I_DSS at 30 V ensures <10 µW standby loss per gate - critical for sub-2 mW platform idle power budgets.

Notebook System Power

USB-C Load Switch

Use Scenario: Main 5 V/3.3 V system rail distribution in ultrabook motherboards, where space and thermal headroom are severely limited.

IC Role / Device Role: High-side load switch controlling power delivery to memory, I/O controllers, and peripheral subsystems.

Use Value: 0.030 Ω R_DS(on) at 4.5 V enables <120 mW loss at 2 A, minimizing local heating and simplifying thermal management.

Use Scenario: Hot-swap protection and power sequencing for USB-C PD ports in thin-and-light laptops.

IC Role / Device Role: Low-side or high-side eFuse replacement with integrated overcurrent and thermal shutdown capability.

Use Value: 100 % UIS rating handles 10 mJ inductive kickback during cable insertion, preventing latch-up or failure without external clamping.

GPU Core Voltage Sequencing

SSD Power Gate

Use Scenario: Controlled ramp-up of GPU core voltage (V_core) during boot, requiring precise timing and low-loss switching.

IC Role / Device Role: Pre-regulator switch enabling soft-start and sequencing coordination with PMIC outputs.

Use Value: 3.6 nC Q_g at 4.5 V allows clean, jitter-free turn-on with 10 kΩ pull-up, meeting tight ±100 µs sequencing windows.

Use Scenario: Isolating NVMe SSD power domain during sleep states to meet Intel Modern Standby (S0ix) leakage targets.

IC Role / Device Role: Low-leakage power gate placed between buck converter output and SSD V_DD input.

Use Value: 1 µA I_DSS at 30 V ensures <10 µW standby loss per gate - critical for sub-2 mW platform idle power budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7401DN-T1-GE3	R_DS(on) = 0.025 Ω @ 4.5 V; Q_g = 4.2 nC; same PowerPAK 1212-8 package and pinout.	Higher conduction loss at 5 V drive - suitable where gate drive voltage ≥ 4.5 V but efficiency margin is tighter.	Select when lower cost is prioritized and 0.005 Ω R_DS(on) increase is acceptable in thermal budget.
DMN3025LSD-13	R_DS(on) = 0.025 Ω @ 4.5 V; Q_g = 5.3 nC; SO-8 package (larger footprint, 40 °C/W R_thJA).	Requires PCB redesign due to SO-8 footprint and higher thermal resistance - not drop-in for space-constrained layouts.	Choose only if legacy SO-8 layout reuse is mandatory and thermal derating to 5 A is acceptable.

Compared with Si7401DN-T1-GE3, SIS478DN-T1-GE3 delivers 20 % lower R_DS(on) and 14 % lower Q_g, enabling higher efficiency and faster switching; versus DMN3025LSD-13, it offers 4× better thermal resistance and 30 % smaller footprint - critical for next-gen ultrabook power stages.

Availability

SIS478DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC system power, USB-C load switching, and GPU voltage sequencing requiring stable component supply across high-volume consumer electronics production cycles.

Supply support for SIS478DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIS478DN product line targets space- and thermally constrained portable computing applications, delivering high-current switching in minimal PCB area using advanced trench-gate silicon and PowerPAK packaging.

FAQ

What is the maximum continuous drain current for SIS478DN-T1-GE3 at 70 °C case temperature?

The SIS478DN-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area for thermal conduction. At ambient temperatures, derating applies - for example, 7.4 A at T_A = 70 °C on a 1" × 1" FR4 board. The SIS478DN-T1-GE3 datasheet confirms this value under Note 'a' in the ID specification row.

Does SIS478DN-T1-GE3 support 3.3 V logic-level gate drive?

SIS478DN-T1-GE3 has a gate threshold voltage range of 1.2–2.5 V and delivers R_DS(on) = 0.030 Ω at V_GS = 4.5 V, making it fully compatible with 3.3 V logic systems when driven with sufficient current. While not fully enhanced at 3.3 V (R_DS(on) rises to ~0.045 Ω), it remains functional for low-duty-cycle or low-current loads. For optimal performance, 4.5 V or 5 V drive is recommended. The SIS478DN-T1-GE3 transfer characteristics curve confirms usable ID > 5 A at V_GS = 3.3 V.

What is the thermal resistance from junction to ambient for SIS478DN-T1-GE3 on a standard PCB?

The SIS478DN-T1-GE3 has a typical R_thJA of 32 °C/W (maximum 39 °C/W) when mounted on a 1" × 1" FR4 board, per its Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions. With extended copper pour on the drain pad, R_thJA can improve to ~25 °C/W. The SIS478DN-T1-GE3 PowerPAK 1212-8 package achieves this via its exposed drain pad, which directly couples heat to the PCB - unlike SO-8 or TSSOP-8 alternatives.

Is SIS478DN-T1-GE3 suitable for reverse polarity protection?

Yes - SIS478DN-T1-GE3 can be used in reverse polarity protection circuits when configured as a low-side switch with source tied to ground and load connected between drain and supply. Its body diode forward voltage is 0.8–1.2 V at 5 A, and it supports 12 A continuous source-drain current. However, for high-efficiency reverse protection, a dedicated ideal diode controller or back-to-back MOSFET configuration is preferred to avoid body diode conduction losses. The SIS478DN-T1-GE3 datasheet explicitly lists "Load Switch" among its applications.

What reflow profile should be used for SIS478DN-T1-GE3?

SIS478DN-T1-GE3 requires a lead-free reflow profile with peak temperature of 240 °C (+5/−0 °C), time above 180 °C of 70–180 seconds, and maximum ramp-down rate of 6 °C/s. Vishay specifies this in document 73257, accessible via www.vishay.com/ppg?73257. The PowerPAK 1212-8 package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity level 1, meaning floor life is unlimited at ≤30 °C/85 % RH. The SIS478DN-T1-GE3 reflow guidelines are identical to those for other Vishay PowerPAK devices.

SIS478DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 398 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 15.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS478DN-T1-GE3 FAQ

1.How can I place an order for SIS478DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS478DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS478DN-T1-GE3 reliable?

The price and inventory of SIS478DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS478DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS478DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS478DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS478DN-T1-GE3?

SIS478DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS478DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS478DN-T1-GE3?

For technical support, including SIS478DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS478DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS478DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS478DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS478DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS478DN-T1-GE3?

All SIS478DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS478DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS478DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS478DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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