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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS496EDNT-T1-GE3

Name: SIS496EDNT-T1-GE3
Brand: Vishay Siliconix
SKU: SIS496EDNT-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS496EDNT-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS496EDNT-T1-GE3.pdf

Description:: MOSFET N-CH 30V 50A PPAK1212-8

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Product details

Overview

SIS496EDNT-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in a PowerPAK® 1212-8S package, with R_DS(on) = 4.8 mΩ at V_GS = 10 V, 50 A continuous drain current (T_C = 25 °C), and 14 nC typical gate charge-designed for high-efficiency DC/DC converters and battery-switching applications in mobile computing.

For engineers reviewing the SIS496EDNT-T1-GE3 datasheet, SIS496EDNT-T1-GE3 pinout, SIS496EDNT-T1-GE3 application, or SIS496EDNT-T1-GE3 equivalent, key selection criteria include its 0.75 mm profile, 100 % R_g and UIS tested reliability, thermal resistance R_thJC = 1.9 °C/W, and compatibility with lead-free reflow per JEDEC J-STD-020.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (1–2.5 V) enables direct drive from 3.3 V and 4.5 V controllers, while the 175 pF reverse transfer capacitance (C_rss) supports stable operation in synchronous buck topologies.

The device integrates a robust body diode with t_rr = 20–40 ns and Q_rr = 10–20 nC, optimized for reduced switching loss during freewheeling. Thermal design leverages the exposed-drain PowerPAK 1212-8S footprint, delivering 2.4 °C/W max junction-to-case resistance under steady-state conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 5 V–12 V input DC/DC stages
R_DS(on) @ 10 V	4.8 mΩ - Enables ≤120 mW conduction loss at 50 A (T_C)
R_DS(on) @ 4.5 V	6.2 mΩ - Ensures usable on-resistance with 4.5 V gate drive in battery-powered systems
Q_g typ.	14 nC - Supports efficient 1–2 MHz switching with moderate gate driver strength
I_D cont. (T_C = 25 °C)	50 A - Rated for high-current power rails without external heatsink
R_thJC max.	2.4 °C/W - Allows precise junction temperature estimation when mounted on copper pads
V_GS(th)	1–2.5 V - Compatible with standard logic-level PWM controllers and microcontroller GPIO

Pinout & Package

PowerPAK® 1212-8S is a leadless, surface-mount package with an exposed drain pad on the bottom side. Dimensions: 3.3 mm × 3.3 mm × 0.75 mm. The package features eight terminals: four parallel source pins, three parallel drain pins, and one gate pin-all accessible from the top view.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (S)	Source	Four parallel source terminals reduce bond-wire inductance and improve current sharing
5, 6, 7, 8 (D)	Drain	Three drain terminals plus exposed bottom pad provide low-inductance, high-current path to PCB ground plane
Gate (G)	Control input	Single gate terminal located adjacent to source for minimized loop inductance in high-dI/dt switching

Key Features

Feature	Design Value
TrenchFET® process	Enables 4.8 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint-reducing board area vs. SO-8 equivalents
100 % R_g and UIS tested	Guarantees gate robustness and avalanche energy handling (E_AS = 31 mJ) for unclamped inductive switching
0.75 mm height	Supports ultra-thin end equipment such as ultrabooks and tablets where Z-height is constrained
ESD rating	2500 V HBM - Reduces need for external ESD protection in portable system front-end switches
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (Doc. #99912)

Applications

DC/DC Converter	Battery Switch
Use Scenario: High-frequency synchronous buck converter in notebook CPU core VRMs. IC Role / Device Role / Timing Role: Low-side switch handling 30–50 A continuous current with <20 ns fall time. Use Value: 6.2 mΩ R_DS(on) at 4.5 V gate drive ensures >95 % efficiency at light-to-moderate loads.	Use Scenario: Main battery disconnect switch in 2-cell Li-ion powered industrial handhelds. IC Role / Device Role / Timing Role: Load switch controlling power delivery between battery and system rail. Use Value: 50 A rating and 31 mJ avalanche energy tolerate hot-plug transients and load dump events.
Power Management Unit	Mobile Computing System
Use Scenario: Dual-phase power stage in tablet SoC PMIC with integrated gate drivers. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) output FET in compact dual-phase layout. Use Value: 14 nC Q_g enables clean 1.5 MHz switching with minimal gate driver power loss.	Use Scenario: System power rail enable switch in thin-and-light laptop platforms. IC Role / Device Role / Timing Role: Logic-level controlled main power switch with fast turn-on (<20 ns td(on)) and low thermal resistance. Use Value: 0.75 mm height and 2.4 °C/W R_thJC support thermal integrity in space-constrained chassis.

DC/DC Converter

Battery Switch

Use Scenario: High-frequency synchronous buck converter in notebook CPU core VRMs.

IC Role / Device Role / Timing Role: Low-side switch handling 30–50 A continuous current with <20 ns fall time.

Use Value: 6.2 mΩ R_DS(on) at 4.5 V gate drive ensures >95 % efficiency at light-to-moderate loads.

Use Scenario: Main battery disconnect switch in 2-cell Li-ion powered industrial handhelds.

IC Role / Device Role / Timing Role: Load switch controlling power delivery between battery and system rail.

Use Value: 50 A rating and 31 mJ avalanche energy tolerate hot-plug transients and load dump events.

Power Management Unit

Mobile Computing System

Use Scenario: Dual-phase power stage in tablet SoC PMIC with integrated gate drivers.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) output FET in compact dual-phase layout.

Use Value: 14 nC Q_g enables clean 1.5 MHz switching with minimal gate driver power loss.

Use Scenario: System power rail enable switch in thin-and-light laptop platforms.

IC Role / Device Role / Timing Role: Logic-level controlled main power switch with fast turn-on (<20 ns td(on)) and low thermal resistance.

Use Value: 0.75 mm height and 2.4 °C/W R_thJC support thermal integrity in space-constrained chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V; larger PowerPAK 5x6 package; higher Q_g = 29 nC	Better conduction loss but slower switching; requires more PCB area	Select when lowest R_DS(on) dominates over size and speed constraints
IRLML6344TRPBF	R_DS(on) = 28 mΩ @ 4.5 V; SOT-23 package; I_D = 4.3 A (T_A)	Lower current capability; suitable only for sub-5 A loads	Select only for space-limited, low-power auxiliary rails-not as primary replacement

Compared with SiR872DP-T1-GE3 and IRLML6344TRPBF, the SIS496EDNT-T1-GE3 delivers optimal balance of low R_DS(on), compact 3.3 mm × 3.3 mm footprint, and moderate gate charge-making it preferred for mid-power mobile DC/DC and battery-switch designs where board area and thermal performance are jointly critical.

Availability

SIS496EDNT-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, battery switches, and power management units requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for SIS496EDNT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SIS496EDNT-T1-GE3 belongs to Vishay's TrenchFET® Gen IV low-voltage power MOSFET family, engineered specifically for high-current, high-density mobile and computing power delivery systems.

FAQ

What is the maximum continuous drain current rating for SIS496EDNT-T1-GE3 at 70 °C case temperature?

The SIS496EDNT-T1-GE3 supports 50 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal limits and assumes proper PCB copper area and airflow. At ambient temperature (T_A = 25 °C), the rated current drops to 20.4 A due to higher junction-to-ambient thermal resistance.

Does SIS496EDNT-T1-GE3 require a gate resistor for typical 1–2 MHz synchronous buck operation?

Yes-the SIS496EDNT-T1-GE3 has a typical gate resistance (R_g) of 1.2 Ω and total gate charge (Q_g) of 14 nC. For stable 1–2 MHz switching, a series gate resistor of 1–5 Ω is recommended to damp ringing and control dV/dt, especially when driven by low-impedance controllers like TI's CSD97374Q4M or Infineon's IR35215.

Can SIS496EDNT-T1-GE3 be used in place of a SO-8 MOSFET in an existing layout?

No-SIS496EDNT-T1-GE3 uses the PowerPAK 1212-8S package (3.3 mm × 3.3 mm), which is not pin-compatible with SO-8. It requires a dedicated land pattern with an exposed drain pad and four source terminals. PCB redesign is necessary; thermal and electrical performance will differ significantly due to lower inductance and improved thermal coupling.

What is the body diode forward voltage of SIS496EDNT-T1-GE3 at 10 A and room temperature?

The body diode forward voltage (V_SD) of the SIS496EDNT-T1-GE3 is 0.8–1.2 V at I_S = 10 A and T_J = 25 °C, per the "Drain-Source Body Diode Characteristics" section. This low V_SD reduces freewheeling losses in non-synchronous configurations and improves light-load efficiency in buck converters.

Is SIS496EDNT-T1-GE3 qualified for automotive applications?

No-SIS496EDNT-T1-GE3 is not AEC-Q101 qualified. It is designed for commercial and industrial mobile computing applications. For automotive use, Vishay offers AEC-Q101-qualified alternatives such as the SQJQ480E, which shares similar voltage and R_DS(on) specs but undergoes extended reliability testing per automotive standards.

SIS496EDNT-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1515 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS496EDNT-T1-GE3 FAQ

1.How can I place an order for SIS496EDNT-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS496EDNT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS496EDNT-T1-GE3 reliable?

The price and inventory of SIS496EDNT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS496EDNT-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS496EDNT-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS496EDNT-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS496EDNT-T1-GE3?

SIS496EDNT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS496EDNT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS496EDNT-T1-GE3?

For technical support, including SIS496EDNT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS496EDNT-T1-GE3 requirements.

6.How does Aetrix verify that SIS496EDNT-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS496EDNT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS496EDNT-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS496EDNT-T1-GE3?

All SIS496EDNT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS496EDNT-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS496EDNT-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS496EDNT-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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