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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS5712DN-T1-GE3

Name: SIS5712DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS5712DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS5712DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS5712DN-T1-GE3.pdf

Description:: MOSFET N-CH 150V 2.2A PPAK1212-8

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Product details

Overview

SIS5712DN-T1-GE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 0.0555 Ω @ V_GS = 10 V, Q_g = 5.8 nC (typ), I_D = 18 A, and optimized for primary-side switching in high-efficiency DC/DC converters.

For engineers reviewing the SIS5712DN-T1-GE3 datasheet, SIS5712DN-T1-GE3 pinout, SIS5712DN-T1-GE3 application, or SIS5712DN-T1-GE3 equivalent, key selection criteria include its low R_DS(on)–Q_oss figure of merit, 100 % R_g and UIS testing, and thermal performance with R_thJC = 2.4 °C/W (typ) for high-power density designs.

Technical Context

This MOSFET employs Vishay's TrenchFET® Gen V process to achieve a tuned R_DS(on)–Q_oss FOM ideal for hard-switched topologies. Its gate charge profile (Q_g = 5.8 nC typ, Q_gd = 1.2 nC) supports fast, low-loss switching at 75 V V_DS bias with minimal Miller effect.

The device features a robust body diode (V_SD = 0.8–1.2 V @ I_S = 4.5 A, t_rr = 49–98 ns) and is 100 % tested for gate resistance (R_g = 0.2–1.8 Ω) and unclamped inductive switching (UIS), ensuring reliability in motor drive and converter primary-side surge conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 100 V bus applications with margin.
R_DS(on) max @ 10 V	0.0555 Ω - Enables <1 W conduction loss at 18 A continuous drain current under optimal gate drive.
Q_g typ	5.8 nC - Low total gate charge reduces driver power demand and enables efficient 500 kHz+ switching in SMPS.
I_D (T_C = 25 °C)	18 A - Continuous drain current rating defined at case temperature, supporting high-current primary switches.
R_thJC max	3.2 °C/W - Low junction-to-case thermal resistance allows direct heatsinking for sustained high-power operation.
V_GS(th)	2–4 V - Threshold voltage range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers.
C_iss	500 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements in high-frequency designs.

Pinout & Package

Package: PowerPAK® 1212-8 (3.3 mm × 3.3 mm, leadless, exposed drain pad on bottom).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to large copper area on PCB for thermal dissipation and low-inductance power path.
4 (top side)	Gate (G)	Single gate terminal located adjacent to source pins to minimize gate loop inductance and suppress oscillation.

Key Features

Feature	Design Value
TrenchFET® Gen V process	Delivers industry-leading R_DS(on)–Q_oss FOM for reduced switching + conduction losses in hard-switched converters.
100 % R_g and UIS tested	Ensures gate drive consistency and ruggedness against inductive energy spikes without derating assumptions.
PowerPAK 1212-8 package	Provides 3× lower R_thJC vs. SO-8, enabling higher power density with no leadframe thermal bottleneck.
Low Q_gd/Q_g ratio	Crss/Ciss = 0.012–0.024 minimizes Miller plateau duration, improving controllability during dV/dt transitions.
Body diode t_rr	49–98 ns reverse recovery time supports synchronous rectification and ZVS-assisted topologies.

Applications

Primary-Side Switching	DC/DC Converter
Use Scenario: High-voltage input stage of isolated flyback or forward converters operating from 48–100 V DC bus. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer via transformer coupling; operates in PWM mode at 100–500 kHz. Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, directly improving full-load efficiency by ≥0.5 % over Gen IV equivalents.	Use Scenario: Non-isolated buck or half-bridge DC/DC regulator supplying 3.3 V/12 V rails in telecom or industrial power supplies. IC Role / Device Role / Timing Role: High-side or low-side switching element in synchronous rectification topology; handles peak currents up to 18 A. Use Value: Optimized C_iss/C_oss ratio and fast tr/tf (6–18 ns) enable clean edge control and reduced EMI filter burden.
Motor Drive Control	Industrial Power Stage
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for HVAC actuators or robotic joints. IC Role / Device Role / Timing Role: Low-side switch commutating phase current; subjected to repetitive UIS events during PWM dead-time and back-EMF reversal. Use Value: 100 % UIS-tested ruggedness eliminates need for external snubbers, reducing BOM count and board space.	Use Scenario: High-current output stage in programmable DC load or battery tester requiring stable 15 A continuous conduction. IC Role / Device Role / Timing Role: Linear or switched-mode pass element dissipating up to 39.1 W at T_C = 25 °C with forced cooling. Use Value: R_thJC = 2.4 °C/W (typ) enables direct mounting to heatsink, achieving >85 % thermal utilization vs. SO-8 alternatives.

Primary-Side Switching

DC/DC Converter

Use Scenario: High-voltage input stage of isolated flyback or forward converters operating from 48–100 V DC bus.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer via transformer coupling; operates in PWM mode at 100–500 kHz.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, directly improving full-load efficiency by ≥0.5 % over Gen IV equivalents.

Use Scenario: Non-isolated buck or half-bridge DC/DC regulator supplying 3.3 V/12 V rails in telecom or industrial power supplies.

IC Role / Device Role / Timing Role: High-side or low-side switching element in synchronous rectification topology; handles peak currents up to 18 A.

Use Value: Optimized C_iss/C_oss ratio and fast tr/tf (6–18 ns) enable clean edge control and reduced EMI filter burden.

Motor Drive Control

Industrial Power Stage

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for HVAC actuators or robotic joints.

IC Role / Device Role / Timing Role: Low-side switch commutating phase current; subjected to repetitive UIS events during PWM dead-time and back-EMF reversal.

Use Value: 100 % UIS-tested ruggedness eliminates need for external snubbers, reducing BOM count and board space.

Use Scenario: High-current output stage in programmable DC load or battery tester requiring stable 15 A continuous conduction.

IC Role / Device Role / Timing Role: Linear or switched-mode pass element dissipating up to 39.1 W at T_C = 25 °C with forced cooling.

Use Value: R_thJC = 2.4 °C/W (typ) enables direct mounting to heatsink, achieving >85 % thermal utilization vs. SO-8 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 0.042 Ω @ 10 V (lower), Q_g = 10.5 nC (higher), same PowerPAK 1212-8 package	Better conduction loss but higher gate drive loss; suited for lower-frequency, high-current apps	Prefer when I_D > 20 A avg dominates efficiency; avoid if f_SW > 300 kHz due to Q_g penalty
IRF6642TRPBF	R_DS(on) = 0.055 Ω @ 10 V (similar), Q_g = 12.5 nC (higher), PQFN 5×6 mm package	Larger footprint, higher thermal resistance (R_thJC = 3.5 °C/W), legacy trench process	Select only if legacy design reuse or dual-source requirement mandates Infineon footprint compatibility

Compared with SiR626DP-T1-GE3 and IRF6642TRPBF, the SIS5712DN-T1-GE3 delivers the best balance of low Q_g, tight R_DS(on) tolerance, and proven UIS ruggedness-making it optimal for compact, high-frequency, high-reliability primary-side switching where gate drive efficiency and surge immunity are critical.

Availability

SIS5712DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drive control, and primary-side switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and embedded OEM programs.

Supply support for SIS5712DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIS5712DN-T1-GE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-frequency, high-efficiency switching in space-constrained industrial and telecom power systems.

FAQ

What is the maximum continuous drain current rating for the SIS5712DN-T1-GE3 at 70 °C case temperature?

The SIS5712DN-T1-GE3 has a continuous drain current rating of 14.6 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits under real-world heatsink conditions and must be used-not the 18 A rating at 25 °C-for thermal design validation in SIS5712DN-T1-GE3-based power stages.

Does the SIS5712DN-T1-GE3 support logic-level gate drive?

Yes, the SIS5712DN-T1-GE3 has a gate threshold voltage (V_GS(th)) of 2–4 V, enabling reliable turn-on with 5 V logic-level drivers. However, its R_DS(on) is fully specified only at V_GS = 7.5 V and 10 V; for lowest conduction loss, a 10 V gate drive is recommended in SIS5712DN-T1-GE3 applications.

Is the SIS5712DN-T1-GE3 suitable for synchronous rectification?

The SIS5712DN-T1-GE3 features a well-characterized body diode with t_rr = 49–98 ns and Q_rr = 96–192 nC, making it viable for synchronous rectification in medium-frequency flyback or LLC converters. However, its R_DS(on) is not optimized for low-voltage secondary-side use; dedicated SR controllers and lower-V_DS MOSFETs remain preferred for <20 V outputs in SIS5712DN-T1-GE3 system designs.

What is the thermal resistance from junction to case (R_thJC) for the SIS5712DN-T1-GE3?

The SIS5712DN-T1-GE3 has a typical junction-to-case thermal resistance of 2.4 °C/W and a maximum of 3.2 °C/W, measured from the silicon die to the exposed drain pad. This low R_thJC enables effective heat transfer to PCB copper or external heatsinks-critical for maintaining T_J ≤ 150 °C in high-power SIS5712DN-T1-GE3 implementations.

How is the SIS5712DN-T1-GE3 marked on the package?

The SIS5712DN-T1-GE3 is marked on the top surface of the PowerPAK 1212-8 package with the alphanumeric code "5712" followed by date code and factory traceability symbols. The "GE3" suffix denotes lead (Pb)-free and halogen-free compliance per Vishay's material categorization standard, and this marking is visible under standard optical inspection for SIS5712DN-T1-GE3 quality verification.

SIS5712DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 55.5mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 500 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 39.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS5712DN-T1-GE3 FAQ

1.How can I place an order for SIS5712DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS5712DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS5712DN-T1-GE3 reliable?

The price and inventory of SIS5712DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS5712DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS5712DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS5712DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS5712DN-T1-GE3?

SIS5712DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS5712DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS5712DN-T1-GE3?

For technical support, including SIS5712DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS5712DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS5712DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS5712DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS5712DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS5712DN-T1-GE3?

All SIS5712DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS5712DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS5712DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS5712DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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