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Vishay Siliconix SIS612EDNT-T1-GE3
- Part No.:
- SIS612EDNT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SIS612EDNT-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 50A PPAK1212-8S
- Quantity:
- Payment:
- Shipping:
Inventory:4,854
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Product details
Overview
SIS612EDNT-T1-GE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® power MOSFET in PowerPAK® 1212-8S package, rated for 50 A continuous drain current at TC = 25 °C, with RDS(on) of 3.9 mΩ at VGS = 4.5 V and Qg of 22.5 nC - optimized for high-efficiency battery and load switching in mobile computing power management.
For engineers reviewing the SIS612EDNT-T1-GE3 datasheet, SIS612EDNT-T1-GE3 pinout, SIS612EDNT-T1-GE3 application, or SIS612EDNT-T1-GE3 equivalent, key selection criteria include low RDS(on) at 3.7 V gate drive, 0.75 mm profile for space-constrained PCBs, thermal resistance RthJC of 1.9 °C/W, and UIS-tested ruggedness for load-switch reliability.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its 20 V VDS rating and 12 V maximum gate-source voltage support logic-level and standard gate-drive compatibility in portable power rails.
The device integrates a robust body diode with trr = 22 ns and Qrr = 10 nC, enabling efficient synchronous rectification or freewheeling in DC-DC converters and battery protection circuits where reverse recovery performance impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - supports input rails up to 19.5 V nominal battery systems (e.g., 3S Li-ion) |
| RDS(on) max @ 4.5 V | 3.9 mΩ - enables <100 mW conduction loss at 5 A, critical for thermally constrained tablets |
| Qg typ | 22.5 nC - balances switching speed and gate driver loading for 1–2 MHz DC-DC operation |
| ID continuous @ TC=25°C | 50 A - allows single-device implementation of high-current load switches without parallel devices |
| RthJC | 1.9 °C/W - permits >40 W power dissipation with modest heatsinking on copper-pour PCBs |
| VGS(th) | 0.5–1.2 V - ensures turn-on with 1.8 V or 3.3 V logic controllers, supporting ultra-low-voltage sequencing |
| ESD HBM | 3400 V - meets IEC 61000-4-2 Level 3 for robust handling during board assembly and field service |
Pinout & Package
PowerPAK® 1212-8S is a leadless, surface-mount package measuring 3.3 mm × 3.3 mm × 0.75 mm, with exposed drain paddle on bottom for thermal and electrical performance. The top-side terminals are arranged in dual-row configuration: pins 1–4 source, pins 5–8 drain, pin G (gate) located between pins 4 and 5 on top edge.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4 (Top row, left to right) | Source (S) | Low-impedance return path; all four pins internally connected - must be soldered to large copper pour for thermal conduction and current sharing |
| 5–8 (Top row, left to right) | Drain (D) | Main power output node; pins 5–8 tied to exposed bottom paddle - requires full-solder coverage of paddle for RthJC spec compliance |
| G (between pins 4 and 5) | Gate (G) | Control input; isolated from drain/source by oxide - layout must minimize trace inductance to suppress ringing during 200 A pulsed switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 3.9 mΩ RDS(on) at 4.5 V in 3.3 mm² footprint - reduces board area vs. SO-8 equivalents by 65 % |
| 100 % Rg and UIS tested | Ensures gate resistance ≤2 Ω and avalanche energy ≥20 mJ per unit - eliminates field failures in inductive load disconnect |
| PowerPAK 1212-8S package | 0.75 mm height enables stacking under thin bezels; exposed drain paddle lowers thermal resistance to 1.9 °C/W |
| Body diode trr = 22 ns | Minimizes reverse recovery losses in buck converter high-side switch applications - improves efficiency by ~0.8 % at 1 MHz |
| 3400 V HBM ESD rating | Eliminates need for external ESD protection in battery connector and USB-C PD load-switch designs |
Applications
| Battery Protection Circuit | Tablet PC Power Rail Switch |
|---|---|
Use Scenario: Isolating main Li-ion battery from system during overvoltage, overtemperature, or short-circuit events. IC Role / Device Role / Timing Role: High-side load switch controlled by battery management IC (e.g., BQ series) to interrupt 20–40 A discharge paths within 100 μs. Use Value: 3.9 mΩ RDS(on) limits voltage drop to <160 mV at 40 A, preserving battery cutoff accuracy and reducing thermal stress on protection IC. | Use Scenario: Enabling/disabling 5 V or 12 V subsystems (e.g., display backlight, SSD, USB ports) based on OS power states. IC Role / Device Role / Timing Role: Low-side or high-side power switch driven by PMIC GPIO with 3.3 V logic level. Use Value: 0.5–1.2 V VGS(th) guarantees reliable turn-on with 1.8 V/3.3 V control signals; 22.5 nC Qg enables <10 μs switching transitions. |
| Mobile SoC Core Voltage Sequencing | USB-C Power Delivery Load Switch |
Use Scenario: Controlling power-up sequence of CPU/GPU cores and memory rails in smartphones and ultrabooks. IC Role / Device Role / Timing Role: Precision-controlled high-side switch synchronized with PMIC enable timing and voltage ramp rates. Use Value: Tight RDS(on) distribution (±15 %) ensures predictable inrush current and avoids rail collapse during multi-rail startup. | Use Scenario: Implementing programmable current-limiting and fault isolation in USB-C PD sink implementations. IC Role / Device Role / Timing Role: Bidirectional load switch managing VBUS path with integrated reverse polarity and overcurrent detection. Use Value: 200 A pulsed drain rating supports 5 A/20 V PD3.0 fault clearing; body diode Qrr = 10 nC minimizes cross-conduction loss during soft-start. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-GE3 | RDS(on) = 3.0 mΩ @ 4.5 V; larger PowerPAK 1212-8 package (0.95 mm height); higher Qg = 32 nC | Better conduction loss but slower switching; less suitable for >1 MHz DC-DC sync rectifiers | Select when thermal headroom is limited and switching frequency <500 kHz |
| DMT6009LPS-13 | RDS(on) = 4.5 mΩ @ 4.5 V; same 3.3 mm × 3.3 mm footprint; lower ID = 42 A; no UIS rating published | Lower cost but untested for avalanche stress - avoid in battery disconnect with inductive loads | Select for cost-sensitive consumer applications without stringent ruggedness requirements |
Compared with SiR626DP-T1-GE3 and DMT6009LPS-13, the SIS612EDNT-T1-GE3 offers optimal balance of low-profile packaging, 22.5 nC gate charge for high-frequency control, and factory-verified UIS capability - making it preferred for compact, high-reliability mobile power switches.
Availability
SIS612EDNT-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, tablet PC power rail switching, and USB-C power delivery load switching requiring stable component supply across production lifecycles.
Supply support for SIS612EDNT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SIS612EDNT-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, low-voltage load switching in space- and thermally-constrained portable electronics.
FAQ
What is the maximum continuous drain current rating for SIS612EDNT-T1-GE3 at 70 °C case temperature?
The SIS612EDNT-T1-GE3 supports 50 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability and assumes proper PCB copper pour and thermal vias to maintain junction temperature below 150 °C. Derating is not required between 25 °C and 70 °C case temperature.
Does SIS612EDNT-T1-GE3 have a specified body diode reverse recovery time (trr)?
Yes, the SIS612EDNT-T1-GE3 has a typical body diode reverse recovery time (trr) of 22 ns, measured at IF = 10 A, di/dt = 100 A/μs, and TJ = 25 °C. This value is confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet and supports use in synchronous rectifier and freewheeling applications up to 2 MHz.
Is SIS612EDNT-T1-GE3 suitable for high-side load switching with 3.3 V gate drive?
Yes, the SIS612EDNT-T1-GE3 is fully compatible with 3.3 V gate drive: its gate threshold voltage (VGS(th)) ranges from 0.5 V to 1.2 V, and RDS(on) is specified at 4.2 mΩ max at VGS = 3.7 V. At 3.3 V, the device delivers strong enhancement-mode conduction with <5 mΩ on-resistance, making it ideal for high-side switching controlled by standard logic-level PMIC outputs.
What is the thermal resistance from junction to case (RthJC) for SIS612EDNT-T1-GE3?
The SIS612EDNT-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 1.9 °C/W, with a maximum of 2.4 °C/W, measured under steady-state conditions. This low value is enabled by the exposed drain paddle in the PowerPAK 1212-8S package and requires full-solder coverage of the paddle for achievement in production assemblies.
How is the gate charge (Qg) of SIS612EDNT-T1-GE3 specified, and why does it matter for switching applications?
The SIS612EDNT-T1-GE3 has a typical total gate charge (Qg) of 22.5 nC at VGS = 4.5 V and VDS = 10 V. This parameter directly determines gate driver power consumption and switching transition time. A Qg of 22.5 nC enables clean, fast turn-on/off with low-power drivers (e.g., TI TPS229xx), minimizing switching losses in 500 kHz–2 MHz DC-DC converters and load-switch control loops.
SIS612EDNT-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 14A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2060 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SIS612EDNT-T1-GE3 FAQ
1.How can I place an order for SIS612EDNT-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS612EDNT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS612EDNT-T1-GE3 reliable?
The price and inventory of SIS612EDNT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS612EDNT-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS612EDNT-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS612EDNT-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS612EDNT-T1-GE3?
SIS612EDNT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS612EDNT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS612EDNT-T1-GE3?
For technical support, including SIS612EDNT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS612EDNT-T1-GE3 requirements.
6.How does Aetrix verify that SIS612EDNT-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS612EDNT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS612EDNT-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS612EDNT-T1-GE3?
All SIS612EDNT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS612EDNT-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS612EDNT-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS612EDNT-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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