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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS626DN-T1-GE3

Name: SIS626DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS626DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS626DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS626DN-T1-GE3.pdf

Description:: MOSFET N-CH 25V 16A PPAK1212-8

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Product details

Overview

SIS626DN-T1-GE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® power MOSFET in PowerPAK® 1212-8 package, delivering 16 A continuous drain current at T_C = 25 °C, R_DS(on) = 7.1 mΩ at V_GS = 10 V, and 18.2 nC total gate charge - optimized for high-side synchronous buck converters and load switching in space-constrained DC/DC modules.

For engineers reviewing the SIS626DN-T1-GE3 datasheet, SIS626DN-T1-GE3 pinout, SIS626DN-T1-GE3 application, or SIS626DN-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V (9.6 mΩ), 2.4 °C/W junction-to-case thermal resistance, 100% R_g and UIS tested qualification, and lead-free/halogen-free compliance per JEDEC J-STD-020.

Technical Context

This device employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: t_d(on) = 7 ns and t_f = 8 ns at V_GEN = 10 V, enabling high-frequency operation in synchronous rectification. Its gate threshold voltage (0.6–1.4 V) supports direct logic-level drive from 3.3 V controllers.

The PowerPAK 1212-8 package features an exposed copper drain pad on the bottom surface, providing a direct thermal path to the PCB. With R_thJC = 2.4 °C/W (max), it sustains 52 W power dissipation at T_C = 25 °C - significantly outperforming SO-8 and TSSOP-8 alternatives in thermal density.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - maximum blocking voltage for 3.3 V/5 V input rail applications
R_DS(on)	7.1 mΩ (typ.) at V_GS = 10 V - enables <1.5 W conduction loss at 16 A
I_D (cont.)	16 A at T_C = 25 °C - supports high-current point-of-load regulation
Q_g	18.2 nC (typ.) at V_GS = 4.5 V - ensures efficient drive with low-voltage PWM controllers
R_thJC	2.4 °C/W (max) - allows direct PCB heat sinking without external heatsink
V_GS(th)	0.6–1.4 V - compatible with 1.8 V/3.3 V logic-level gate drivers
C_iss	1925 pF - balances switching speed and EMI control in 500 kHz–1 MHz converters

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package with 3.3 mm × 3.3 mm footprint and 1.05 mm height. The bottom-exposed drain pad provides primary thermal conduction path to PCB copper; top-side terminals are soldered via reflow only (manual iron not recommended).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Eight-terminal drain layout maximizes copper area contact for thermal transfer and minimizes R_DS(on) contribution from package
4	Gate (G)	Single gate terminal located adjacent to source pins - enables Kelvin-source gate drive configuration for accurate threshold control

Key Features

Feature	Design Value
TrenchFET® process	Enables 7.1 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint - 40% smaller than TSSOP-8 with same current rating
100% R_g and UIS tested	Guarantees gate robustness against transient overvoltage and avalanche energy handling up to 20 mJ
Exposed drain pad	Reduces junction-to-board thermal resistance by >5× vs. standard SO-8 - die temperature rise only 4.8 °C above board at 2 W
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for automotive and industrial end-equipment
Low Q_gd/Q_g ratio	3.6 nC / 18.2 nC = 0.20 - suppresses Miller-induced shoot-through in synchronous buck topologies

Applications

Adaptor Switch	Load Switch
Use Scenario: USB-C PD adapter output stage switching between 5 V/9 V/15 V rails under dynamic load. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated gate driver IC to enable/disable output voltage rails. Use Value: 9.6 mΩ R_DS(on) at 4.5 V gate drive minimizes dropout and thermal rise during 3 A continuous load transitions.	Use Scenario: Hot-swap protection in server backplane power distribution with inrush current limiting. IC Role / Device Role / Timing Role: Load switch controlling 12 V supply to PCIe add-in cards during insertion/removal. Use Value: 100% UIS tested capability withstands repetitive 20 mJ avalanche events during hot-plug transients.
Synchronous Buck (High-Side)	DC/DC Module Internal Switch
Use Scenario: Primary switching element in 12 V → 1.2 V, 20 A VRM for CPU core power delivery. IC Role / Device Role / Timing Role: High-side switch operating at 1 MHz with 50% duty cycle in multiphase buck converter. Use Value: 8 ns fall time and 7 ns turn-on delay enable precise dead-time control and minimize body diode conduction loss.	Use Scenario: Integrated power stage in 10 mm × 10 mm isolated DC/DC module for telecom baseband processing. IC Role / Device Role / Timing Role: Main power switch co-packaged with driver and bootstrap diode in compact module form factor. Use Value: PowerPAK 1212-8's 1.05 mm profile allows full integration within 2.5 mm height constraint while maintaining 52 W thermal headroom.

Adaptor Switch

Load Switch

Use Scenario: USB-C PD adapter output stage switching between 5 V/9 V/15 V rails under dynamic load.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated gate driver IC to enable/disable output voltage rails.

Use Value: 9.6 mΩ R_DS(on) at 4.5 V gate drive minimizes dropout and thermal rise during 3 A continuous load transitions.

Use Scenario: Hot-swap protection in server backplane power distribution with inrush current limiting.

IC Role / Device Role / Timing Role: Load switch controlling 12 V supply to PCIe add-in cards during insertion/removal.

Use Value: 100% UIS tested capability withstands repetitive 20 mJ avalanche events during hot-plug transients.

Synchronous Buck (High-Side)

DC/DC Module Internal Switch

Use Scenario: Primary switching element in 12 V → 1.2 V, 20 A VRM for CPU core power delivery.

IC Role / Device Role / Timing Role: High-side switch operating at 1 MHz with 50% duty cycle in multiphase buck converter.

Use Value: 8 ns fall time and 7 ns turn-on delay enable precise dead-time control and minimize body diode conduction loss.

Use Scenario: Integrated power stage in 10 mm × 10 mm isolated DC/DC module for telecom baseband processing.

IC Role / Device Role / Timing Role: Main power switch co-packaged with driver and bootstrap diode in compact module form factor.

Use Value: PowerPAK 1212-8's 1.05 mm profile allows full integration within 2.5 mm height constraint while maintaining 52 W thermal headroom.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	Same die, PowerPAK® 1212-8 Dual configuration - two independent N-ch devices in one package	Used where dual-phase or complementary switching required; higher channel count per unit area	Select when needing two matched switches in identical thermal environment - avoids inter-device R_DS(on) mismatch
IRLML6344TRPBF	SO-8 package, 20 V rating, 28 mΩ R_DS(on) at 4.5 V, 3.2 A I_D - lower current, higher on-resistance, larger footprint	Suitable for low-power load switching (<3 A), not viable for synchronous buck high-side above 5 A	Choose only for legacy SO-8 board compatibility; avoid where thermal density or current >5 A is required

Compared with SiR626DP-T1-GE3, SIS626DN-T1-GE3 offers single-channel optimization with reduced gate drive complexity; versus IRLML6344TRPBF, it delivers 3.2× lower R_DS(on) and 5× higher current in 40% less area - critical for modern high-efficiency, high-density power conversion.

Availability

SIS626DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, USB-C power delivery adaptors, hot-swap load switches, and compact DC/DC modules requiring stable component supply across industrial, computing, and telecom production programs.

Supply support for SIS626DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIS626DN product line targets high-density, high-efficiency DC/DC conversion - designed specifically for high-side switching in sub-1 MHz synchronous buck regulators where thermal performance and gate-drive compatibility with low-voltage controllers are critical.

FAQ

What is the maximum continuous drain current rating for SIS626DN-T1-GE3 at 70 °C case temperature?

The SIS626DN-T1-GE3 supports 16 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is limited by package thermal constraints rather than silicon capability, and remains unchanged from the 25 °C rating due to the PowerPAK 1212-8's low R_thJC of 2.4 °C/W, which maintains junction temperature within safe limits under typical PCB copper layouts.

Does SIS626DN-T1-GE3 require a gate resistor for stable operation in a 1 MHz synchronous buck converter?

Yes - while the SIS626DN-T1-GE3 has low intrinsic gate resistance (0.2–2.5 Ω), a 2.2 Ω to 4.7 Ω external gate resistor is recommended to dampen ringing and control dV/dt during hard switching at 1 MHz. The device's 135 pF Crss and 18.2 nC Q_g at 4.5 V make it sensitive to parasitic LC oscillation without proper gate network tuning, especially when driven by high-speed controllers like TI UCC2753x or Infineon 2EDN.

Can SIS626DN-T1-GE3 be used in linear regulator applications?

No - the SIS626DN-T1-GE3 is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) curve shows pulse-limited capability only (100 μs), and continuous operation in the linear region would exceed its 52 W P_D limit at T_C = 25 °C. For linear regulation, use purpose-built LDOs or MOSFETs with extended SOA such as Vishay SI2300 or ON Semi NTMFS4C09N.

What is the body diode forward voltage of SIS626DN-T1-GE3 at 5 A and room temperature?

The body diode forward voltage (V_SD) of SIS626DN-T1-GE3 is 0.72 V (typical) at I_S = 5 A and T_J = 25 °C, with a maximum of 1.1 V. This low V_SD reduces reverse-recovery losses during synchronous rectification dead-time, and its 20 ns t_rr (typical) further minimizes associated energy dissipation in high-frequency converters.

Is SIS626DN-T1-GE3 compatible with lead-free reflow profiles per JEDEC J-STD-020?

Yes - SIS626DN-T1-GE3 is qualified for lead-free reflow with peak temperature up to 260 °C (per note c in datasheet), matching JEDEC J-STD-020 Class 3A requirements. The PowerPAK 1212-8 package passes thermal cycling and moisture sensitivity level (MSL) 1 testing, and Vishay recommends using the reflow profile documented in www.vishay.com/doc?73257 for optimal solder joint integrity and void minimization.

SIS626DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1925 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS626DN-T1-GE3 FAQ

1.How can I place an order for SIS626DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS626DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS626DN-T1-GE3 reliable?

The price and inventory of SIS626DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS626DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS626DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS626DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS626DN-T1-GE3?

SIS626DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS626DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS626DN-T1-GE3?

For technical support, including SIS626DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS626DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS626DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS626DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS626DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS626DN-T1-GE3?

All SIS626DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS626DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS626DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS626DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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