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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS776DN-T1-GE3

Name: SIS776DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS776DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS776DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS776DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 35A PPAK1212-8

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Product details

Overview

SIS776DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) trench MOSFET monolithically integrated with a Schottky diode in a PowerPAK 1212-8 package. It delivers R_DS(on) = 6.2 mΩ at V_GS = 10 V, 35 A continuous drain current (T_J = 150 °C), and 11.6 nC total gate charge - optimized for low-side synchronous rectification in high-efficiency DC/DC converters.

For engineers reviewing the SIS776DN-T1-GE3 datasheet, SIS776DN-T1-GE3 pinout, SIS776DN-T1-GE3 application, or SIS776DN-T1-GE3 equivalent, key selection criteria include its integrated Schottky body diode (V_SD = 0.65 V max), low R_thJC = 2.4 °C/W, and 100 % UIS-tested ruggedness for power stage reliability under transient stress.

Technical Context

This device implements a SkyFET monolithic architecture combining a TrenchFET® power MOSFET and Schottky diode on a single die, eliminating parasitic inductance between discrete components. Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) supports 4.5 V logic-level drive, while R_DS(on) remains stable across -50 to 150 °C junction temperature.

The PowerPAK 1212-8 package features exposed copper drain pads on the bottom surface for low thermal resistance (R_thJC = 1.9 °C/W typ.) and high-current capability. Dynamic parameters - including C_iss = 1360 pF, Q_gd = 3.6 nC, and t_r/t_f < 22 ns - are characterized at V_DD = 15 V, enabling fast switching in high-frequency buck regulators.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input systems and 12 V intermediate bus architectures.
R_DS(on)	6.2 mΩ @ V_GS = 10 V - Enables ≤ 2.2 W conduction loss at 35 A, critical for thermally constrained point-of-load designs.
I_D (cont)	35 A @ T_C = 25 °C - Package-limited current rating supporting high-density power stages without external heatsinking.
Q_g	11.6 nC @ V_GS = 4.5 V - Low gate charge reduces driver power consumption and enables efficient operation with 5 V microcontroller PWM outputs.
V_SD	0.65 V max @ I_S = 3 A - Integrated Schottky diode minimizes reverse recovery loss and eliminates need for external freewheeling diode.
R_thJC	1.9 °C/W typ. - Enables direct thermal coupling to PCB copper pour or heatsink for sustained 35 A operation at T_C ≤ 70 °C.
t_rr	35 ns max - Fast body diode recovery prevents shoot-through and reduces switching loss during dead-time conduction.

Pinout & Package

PowerPAK 1212-8 is a leadless, surface-mount package measuring 3.3 mm × 3.3 mm × 1.07 mm with exposed drain copper on the bottom side. Thermal performance relies on soldered area to PCB ground plane; no solder fillet required at exposed copper tips.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal for MOSFET channel; requires <1.5 Ω gate resistor to limit ringing and ensure t_d(on) ≤ 22 ns with 10 V drive.
S	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configuration.
D (pins 3,5,6,7,8)	Drain	High-current output node connected to exposed bottom copper; must be routed to power plane for thermal and current handling.

Key Features

Feature	Design Value
SkyFET monolithic integration	Single-die co-location of MOSFET and Schottky diode eliminates bond wire inductance, reducing voltage overshoot during hard switching.
100 % UIS tested	Each unit validated for unclamped inductive switching robustness up to I_AS = 20 A and E_AS = 20 mJ - ensures reliability in motor drive and converter freewheeling faults.
Low-profile PowerPAK 1212-8	1.07 mm height enables use in ultra-thin power modules and stacked PCB assemblies where Z-height is constrained.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance for industrial and telecom equipment.

Applications

Server VRMs	Industrial DC/DC Converters
Use Scenario: High-current, high-frequency buck converter supplying core voltage to multi-core CPUs in 1U rack servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz–1 MHz with 35 A peak load current. Use Value: Integrated Schottky diode eliminates reverse recovery loss, improving efficiency by ≥0.8 % at full load versus discrete MOSFET + diode solutions.	Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated converter in programmable logic controllers and I/O modules. IC Role / Device Role / Timing Role: Primary low-side switch in secondary-side synchronous rectification stage. Use Value: 6.2 mΩ R_DS(on) and 1.9 °C/W R_thJC enable >95 % efficiency at 20 A while maintaining T_J < 125 °C on 2 oz. copper PCB.
Telecom Power Supplies	Automotive ADAS ECUs
Use Scenario: Intermediate bus converter (48 V → 12 V) in 5G base station remote radio units with strict thermal limits. IC Role / Device Role / Timing Role: Low-side FET in multiphase buck regulator delivering up to 60 A per phase. Use Value: 11.6 nC Q_g at 4.5 V allows direct drive from digital PWM controller without external buffer, reducing BOM count and layout area.	Use Scenario: Power delivery to image sensor and radar SoC in compact front-camera or surround-view control units. IC Role / Device Role / Timing Role: Low-side switch in compact 3.3 V/5 V point-of-load regulator meeting AEC-Q101 stress requirements. Use Value: -50 to 150 °C operating range and 100 % UIS testing support reliable operation in under-hood temperature cycling environments.

Server VRMs

Industrial DC/DC Converters

Use Scenario: High-current, high-frequency buck converter supplying core voltage to multi-core CPUs in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz–1 MHz with 35 A peak load current.

Use Value: Integrated Schottky diode eliminates reverse recovery loss, improving efficiency by ≥0.8 % at full load versus discrete MOSFET + diode solutions.

Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated converter in programmable logic controllers and I/O modules.

IC Role / Device Role / Timing Role: Primary low-side switch in secondary-side synchronous rectification stage.

Use Value: 6.2 mΩ R_DS(on) and 1.9 °C/W R_thJC enable >95 % efficiency at 20 A while maintaining T_J < 125 °C on 2 oz. copper PCB.

Telecom Power Supplies

Automotive ADAS ECUs

Use Scenario: Intermediate bus converter (48 V → 12 V) in 5G base station remote radio units with strict thermal limits.

IC Role / Device Role / Timing Role: Low-side FET in multiphase buck regulator delivering up to 60 A per phase.

Use Value: 11.6 nC Q_g at 4.5 V allows direct drive from digital PWM controller without external buffer, reducing BOM count and layout area.

Use Scenario: Power delivery to image sensor and radar SoC in compact front-camera or surround-view control units.

IC Role / Device Role / Timing Role: Low-side switch in compact 3.3 V/5 V point-of-load regulator meeting AEC-Q101 stress requirements.

Use Value: -50 to 150 °C operating range and 100 % UIS testing support reliable operation in under-hood temperature cycling environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR776DP-T1-GE3	Same die, but in PowerPAK SO-8 package (5.0 × 6.0 mm); R_DS(on) identical, but R_thJA = 40 °C/W vs. 33 °C/W for SIS776DN-T1-GE3.	Preferred where board space permits larger footprint and manual rework is required; not suitable for ultra-dense layouts.	Select SiR776DP-T1-GE3 only if thermal budget allows higher R_thJA and SO-8 assembly infrastructure exists.
IRF7769TRPBF	30 V N-channel MOSFET with Schottky (SO-8); R_DS(on) = 6.5 mΩ @ 10 V, Q_g = 13.5 nC, no 100 % UIS test documented.	Lower cost alternative for non-critical industrial supplies where avalanche ruggedness is not mandated.	Choose IRF7769TRPBF when cost sensitivity outweighs guaranteed UIS performance and thermal density requirements.

Compared with SiR776DP-T1-GE3 and IRF7769TRPBF, the SIS776DN-T1-GE3 offers superior thermal density (3.3 mm² footprint), lower R_thJC, and factory-verified UIS robustness - making it optimal for space-constrained, high-reliability power stages where thermal management and fault tolerance are design-critical.

Availability

SIS776DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom power supplies requiring stable component supply, halogen-free compliance, and high-current low-side switching capability.

Supply support for SIS776DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency performance.

The SkyFET product line integrates trench MOSFETs and Schottky diodes on a single silicon die to eliminate packaging parasitics and improve switching efficiency in high-frequency power conversion.

FAQ

What is the maximum continuous drain current rating for the SIS776DN-T1-GE3 at 70 °C case temperature?

The SIS776DN-T1-GE3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area for thermal dissipation; derating applies above 70 °C case temperature per the current derating curve on page 6 of the datasheet.

Does the SIS776DN-T1-GE3 include a body diode, and what are its key characteristics?

Yes, the SIS776DN-T1-GE3 integrates a monolithic Schottky diode with V_SD = 0.65 V max at I_S = 3 A and t_rr = 35 ns max at I_F = 10 A. Unlike conventional MOSFET body diodes, this Schottky structure eliminates reverse recovery charge (Q_rr = 15 nC max), reducing switching loss in synchronous rectification applications.

Is the SIS776DN-T1-GE3 suitable for 4.5 V gate drive applications?

Yes, the SIS776DN-T1-GE3 is fully specified for 4.5 V logic-level drive: R_DS(on) = 8.7 mΩ max at V_GS = 4.5 V and I_D = 7 A, and gate threshold voltage V_GS(th) ranges from 1.0 to 2.5 V. This ensures robust turn-on with standard 5 V microcontroller or PWM controller outputs.

What is the thermal resistance from junction to case (R_thJC) for the SIS776DN-T1-GE3, and how should it be used in thermal design?

The SIS776DN-T1-GE3 has R_thJC = 1.9 °C/W typical and 2.4 °C/W maximum. This value reflects conduction from junction to the exposed drain pad on the bottom of the PowerPAK 1212-8 package. For thermal design, it must be combined with the PCB's thermal resistance from pad to ambient to calculate total T_J.

How is the SIS776DN-T1-GE3 marked for traceability and RoHS compliance?

The SIS776DN-T1-GE3 carries "GE3" in its part marking, indicating lead (Pb)-free and halogen-free construction per IEC 61249-2-21 and RoHS Directive 2002/95/EC. The "T1" denotes tape-and-reel packaging (3,000 pcs/reel), and full traceability is maintained through Vishay's lot-code system documented in datasheet 67012.

SIS776DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: SkyFET®, TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 3.8W (Ta), 52W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS776DN-T1-GE3 FAQ

1.How can I place an order for SIS776DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS776DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS776DN-T1-GE3 reliable?

The price and inventory of SIS776DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS776DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS776DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS776DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS776DN-T1-GE3?

SIS776DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS776DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS776DN-T1-GE3?

For technical support, including SIS776DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS776DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS776DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS776DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS776DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS776DN-T1-GE3?

All SIS776DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS776DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS776DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS776DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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