My Inquiry
My Account
Vishay Siliconix SIS780DN-T1-GE3
- Part No.:
- SIS780DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS780DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 18A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,217
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIS780DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen III power MOSFET monolithically integrated with a Schottky diode in a PowerPAK® 1212-8 package. It delivers RDS(on) of 0.0135 Ω at VGS = 10 V, 18 A continuous drain current at TC = 25 °C, and 7.3 nC total gate charge - optimized for high-efficiency synchronous rectification in notebook PC buck converters.
For engineers reviewing the SIS780DN-T1-GE3 datasheet, SIS780DN-T1-GE3 pinout, SIS780DN-T1-GE3 application, or SIS780DN-T1-GE3 equivalent, key selection criteria include its integrated SkyFET® architecture, ultra-low RDS(on) at 4.5 V drive, body diode reverse recovery time under 29 ns, and thermal resistance RthJC of 3.6 °C/W - all critical for compact, thermally constrained DC-DC designs.
Technical Context
This device implements a monolithic SkyFET® structure combining a TrenchFET® Gen III MOSFET and Schottky diode on a single die, enabling simultaneous conduction control and low-loss freewheeling without external diode placement. Its gate threshold voltage (1–2.3 V) and low Qg support fast switching with 4.5 V logic-level drive.
The PowerPAK 1212-8 package features an exposed copper drain pad on the bottom side for direct thermal coupling to PCB copper, achieving RthJC = 3.6 °C/W (typical) and RthJA = 29 °C/W (t ≤ 10 s), making it suitable for high-density, thermally aggressive applications where junction temperature must stay below 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operation in 12 V/19 V input buck stages. |
| RDS(on) max @ VGS = 10 V | 0.0135 Ω - Enables <1.5 W conduction loss at 10 A, critical for efficiency in high-current notebook system power rails. |
| RDS(on) max @ VGS = 4.5 V | 0.0175 Ω - Ensures robust on-state performance with standard 5 V or 4.5 V controller gate drive, no level-shifting required. |
| Qg typ. | 7.3 nC - Low gate charge reduces driver power loss and enables >1 MHz switching in compact VRMs. |
| ID continuous @ TC = 25 °C | 18 A - Supports high-output-current synchronous buck stages in CPU/GPU core power delivery. |
| VSD @ IS = 1 A | 0.42–0.53 V - Low forward voltage of integrated Schottky diode minimizes freewheeling loss during dead-time conduction. |
| trr typ. | 14.5 ns - Ultra-fast body diode recovery suppresses voltage spikes and EMI in hard-switched synchronous rectifiers. |
| RthJC max | 4.5 °C/W - Enables efficient heat transfer from junction to PCB copper, supporting >20 W dissipation with minimal heatsinking. |
Pinout & Package
PowerPAK® 1212-8 is a leadless, surface-mount package with an exposed copper drain pad on the bottom side. Dimensions: 3.3 mm × 3.3 mm × 1.04 mm (L × W × H); footprint compatible with TSOP-6 but with superior thermal and current-handling capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt synchronous rectifier operation. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to the exposed bottom copper pad - primary thermal and current path to PCB. |
| 4 (top-side) | Gate (G) | Single top-side gate terminal; placed adjacent to source for minimized gate loop inductance and stable high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® monolithic integration | Co-located MOSFET + Schottky diode eliminates layout mismatch, reduces parasitic inductance, and guarantees matched thermal behavior. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress in real-world buck converter faults. |
| Exposed drain pad (PowerPAK 1212-8) | Direct thermal path to PCB copper achieves RthJC = 3.6 °C/W - 5× better than TSSOP-8 - enabling higher power density without heatsinks. |
| Low Qgd/Qg ratio (2/7.3 ≈ 0.27) | Reduces Miller effect, improves dv/dt immunity, and supports stable operation in high-side synchronous rectifier configurations. |
| Body diode trr < 29 ns | Minimizes reverse recovery loss and associated ringing, directly improving efficiency and reducing EMI filter burden in 300 kHz–1 MHz VRMs. |
Applications
| High-Efficiency Notebook CPU Core Power | Thin-and-Light System Memory Rail |
|---|---|
Use Scenario: Primary synchronous rectifier switch in 1–2 phase 12 V input → 0.8–1.2 V output buck converter powering Intel Core i-series CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz–1 MHz with 4.5 V gate drive from integrated controller. Use Value: 0.0175 Ω RDS(on) at 4.5 V and 14.5 ns trr cut conduction and recovery losses by >15% vs. discrete MOSFET+diode solutions. |
Use Scenario: Compact 3.3 V or 1.2 V DDR memory power rail in ultrabook platforms with strict height and thermal limits. IC Role / Device Role / Timing Role: Single-channel synchronous buck switch handling up to 12 A peak load with tight regulation. Use Value: PowerPAK 1212-8's 1.04 mm profile and 3.6 °C/W RthJC allow full 12 A operation on 1 oz. FR4 without thermal derating. |
| USB-C PD Fast-Charge Secondary Side | Industrial 24 V Input Buck Converter |
Use Scenario: Secondary-side synchronous rectifier in 20–100 W USB-C PD adapters with GaN primary-side switching. IC Role / Device Role / Timing Role: Low-VDS (30 V) rectifier handling 5–20 V output, driven by self-driven or controller-synchronized gate signals. Use Value: Integrated Schottky diode eliminates need for external 30 V Schottky, reducing BOM count and board area while maintaining <0.5 V forward drop. |
Use Scenario: High-reliability 24 V input → 5 V/12 V industrial power supply with extended ambient temperature range (−40 to +85 °C). IC Role / Device Role / Timing Role: Main power switch in isolated or non-isolated buck stage requiring 100 % UIS-tested ruggedness. Use Value: −55 to +150 °C TJ rating and 100 % UIS testing ensure sustained operation under load dump or inductive kick conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR870DP-T1-GE3 | 30 V, RDS(on) = 0.0095 Ω @ 10 V, Qg = 11.5 nC, same PowerPAK 1212-8 package | Higher current rating (22 A) and lower RDS(on), but higher gate charge increases driver loss at >1 MHz | Preferred when peak current exceeds 18 A and switching frequency is ≤500 kHz |
| IRF7759L2TRPBF | 30 V, RDS(on) = 0.012 Ω @ 10 V, Qg = 10.2 nC, SO-8 package (larger footprint, RthJC = 20 °C/W) | No integrated Schottky diode; requires external diode for synchronous rectification | Only suitable if board space allows SO-8 and thermal design accommodates higher junction rise |
Compared with SiR870DP-T1-GE3, SIS780DN-T1-GE3 offers lower Qg for high-frequency efficiency but slightly higher RDS(on); compared with IRF7759L2TRPBF, it provides monolithic Schottky integration and 5.5× better thermal resistance - enabling smaller PCB area and cooler operation in space-constrained notebooks.
Availability
SIS780DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC system power, DDR memory rails, and USB-C PD secondary-side synchronous rectification requiring stable component supply across high-volume production cycles.
Supply support for SIS780DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIS780DN-T1-GE3 belongs to Vishay's SkyFET® family of monolithic MOSFET + Schottky devices, engineered specifically for high-density, high-efficiency DC-DC conversion in portable computing and fast-charging applications.
FAQ
What is the maximum continuous drain current for SIS780DN-T1-GE3 at 70 °C case temperature?
The SIS780DN-T1-GE3 supports 18 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is identical to its 25 °C rating due to the device's low RthJC and thermal design - confirming stable high-current operation across typical notebook thermal zones.
Does SIS780DN-T1-GE3 require an external Schottky diode for synchronous rectification?
No. The SIS780DN-T1-GE3 integrates a monolithic Schottky diode within the same die as the MOSFET (SkyFET® architecture), eliminating the need for an external diode. Its VSD = 0.42–0.53 V at 1 A and trr = 14.5 ns provide optimized freewheeling performance without added BOM cost or layout complexity.
What is the gate threshold voltage range for SIS780DN-T1-GE3, and how does it affect 4.5 V drive compatibility?
The gate threshold voltage (VGS(th)) of SIS780DN-T1-GE3 is 1.0–2.3 V at ID = 250 μA. This ensures full enhancement at 4.5 V gate drive, delivering RDS(on) = 0.0175 Ω - making it fully compatible with standard 5 V or 4.5 V PWM controllers without gate boosting circuitry.
Can SIS780DN-T1-GE3 be used in a high-side synchronous rectifier configuration?
Yes. With its low Qgd/Qg ratio (~0.27) and 100 % UIS tested ruggedness, the SIS780DN-T1-GE3 supports high-side operation in floating-gate configurations. However, proper gate drive timing and shoot-through protection remain essential - verified in Vishay's AN822 thermal and layout guidelines.
What is the recommended reflow profile for soldering SIS780DN-T1-GE3 in PowerPAK 1212-8 package?
Vishay specifies a peak reflow temperature of 240 °C ± 0 °C for 20–40 seconds, with ramp-down ≤6 °C/s. The PowerPAK 1212-8 is lead (Pb)-free and halogen-free; full profile details are documented in Vishay document 73257, accessible at www.vishay.com/doc?73257.
SIS780DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 722 pF @ 15 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 27.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS780DN-T1-GE3 FAQ
1.How can I place an order for SIS780DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS780DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS780DN-T1-GE3 reliable?
The price and inventory of SIS780DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS780DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS780DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS780DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS780DN-T1-GE3?
SIS780DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS780DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS780DN-T1-GE3?
For technical support, including SIS780DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS780DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS780DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS780DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS780DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS780DN-T1-GE3?
All SIS780DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS780DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS780DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS780DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIS780DN-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
