My Inquiry
My Account
Vishay Siliconix SIS782DN-T1-GE3
- Part No.:
- SIS782DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS782DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 16A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,239
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIS782DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET with monolithically integrated SkyFET® Schottky diode in a PowerPAK® 1212-8 package. It delivers RDS(on) of 9.5 mΩ at VGS = 10 V and 12.0 mΩ at VGS = 4.5 V, supports 16 A continuous drain current, and serves as a synchronous rectifier switch or buck converter primary/secondary switch in notebook PC power systems.
For engineers reviewing the SIS782DN-T1-GE3 datasheet, SIS782DN-T1-GE3 pinout, SIS782DN-T1-GE3 application, or SIS782DN-T1-GE3 equivalent, key selection criteria include its integrated Schottky body diode for reduced reverse recovery loss, ultra-low 2.4 °C/W junction-to-case thermal resistance, and validated 100 % Rg and UIS testing for robust switching reliability in high-frequency DC-DC converters.
Technical Context
This device implements a monolithic SkyFET® architecture-integrating a trench-gated N-channel MOSFET and a low-VF Schottky diode on a single die-enabling self-synchronous rectification without external diode placement. Its gate threshold voltage (1.0–2.3 V) and low Qg (9.5 nC typ. at 4.5 V) support efficient 4.5 V gate drive in space-constrained notebook power rails.
The PowerPAK® 1212-8 package features an exposed copper drain pad on the bottom side for direct thermal conduction to the PCB, achieving RthJC = 2.4 °C/W (max 3.0 °C/W) and RthJA = 28 °C/W (typical, 1" × 1" FR4). The 1.07 mm profile and 3.3 mm × 3.3 mm footprint enable high-density layout in thin-profile computing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 5 V–12 V input buck stages and 3.3 V/5 V output rails. |
| RDS(on) @ 10 V | 9.5 mΩ max - Enables ≤150 mW conduction loss at 10 A, critical for thermally constrained notebook memory/system power. |
| RDS(on) @ 4.5 V | 12.0 mΩ max - Ensures stable on-resistance under logic-level gate drive from standard PWM controllers. |
| Qg @ 4.5 V | 9.5 nC typ. - Low gate charge reduces switching loss and eases gate driver sizing in 300–1000 kHz converters. |
| ID (continuous) | 16 A @ TC = 25 °C - Rated for high-current synchronous rectification in compact 1212-footprint layouts. |
| VSD @ 2 A | 0.44–0.55 V - Integrated Schottky diode provides lower forward drop than conventional body diodes, reducing dead-time losses. |
| RthJC | 2.4 °C/W typ. - Direct thermal path from junction to case enables >25 W power dissipation with minimal heatsinking. |
Pinout & Package
PowerPAK® 1212-8 is a leadless, surface-mount package with an exposed copper drain pad on the bottom side. Its 3.3 mm × 3.3 mm footprint and 1.07 mm height support ultra-thin notebook designs while delivering thermal performance comparable to SO-8 packages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt synchronous rectifiers. |
| 5, 6, 7, 8 | Drain (D) | Eight-terminal drain connection including large bottom-side copper pad; optimized for low-inductance, high-current PCB routing and thermal spreading. |
| 4 (top side) | Gate (G) | Single top-side gate terminal; positioned for short gate loop length to minimize EMI and oscillation risk in high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® integration | Monolithic co-location of MOSFET and Schottky diode eliminates discrete diode placement, reduces BOM count, and cuts board area by ≥30 % vs. dual-component solutions. |
| PowerPAK® 1212-8 thermal design | Exposed drain pad achieves 2.4 °C/W RthJC, enabling 41 W power dissipation at TC = 25 °C-more than double that of TSSOP-8 equivalents. |
| 100 % Rg and UIS tested | Every unit undergoes gate resistance screening and unclamped inductive switching stress test, ensuring robustness against voltage spikes in buck converter freewheeling phases. |
| Low Qgd/Qg ratio | Qgd = 3.2 nC / Qg = 9.5 nC (4.5 V) yields 0.34 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk. |
| Body diode trr | 18–35 ns - Fast reverse recovery minimizes cross-conduction loss during synchronous rectifier dead time, improving light-load efficiency. |
Applications
| Notebook PC System Power | Buck Converter Primary Switch |
|---|---|
Use Scenario: Regulating core voltage (Vcore) and system I/O voltage (VCCIO) in ultrathin notebooks with strict height and thermal budgets. IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converters, operating at 500–1000 kHz with 4.5 V gate drive. Use Value: Integrated Schottky diode eliminates external diode, reducing component count and PCB area; low RDS(on) at 4.5 V ensures <120 mW conduction loss at 8 A load. | Use Scenario: High-efficiency step-down conversion from 12 V or 19 V adapter input to 1.8 V–5 V processor/memory rails. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch in synchronous buck topology, driven by dedicated gate driver IC. Use Value: 9.5 mΩ RDS(on) at 10 V and 20.3 nC total gate charge enable <1.2 W switching + conduction loss at 10 A/500 kHz, supporting >92 % peak efficiency. |
| Memory Power Regulation | Synchronous Rectifier in DC-DC Modules |
Use Scenario: Point-of-load (POL) regulation for DDR4/LPDDR4 memory subsystems requiring fast transient response and low noise. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 3-phase interleaved buck, handling up to 16 A per phase with tight thermal constraints. Use Value: 2.4 °C/W RthJC allows full 16 A rating with only 2-layer PCB copper; VSD = 0.44 V minimizes reverse conduction loss during dead time. | Use Scenario: Embedded DC-DC modules for industrial IoT edge nodes where size, efficiency, and reliability are prioritized over cost. IC Role / Device Role / Timing Role: Dual-function switch: MOSFET for active switching and integrated Schottky for freewheeling path in non-isolated buck modules. Use Value: Monolithic SkyFET® eliminates diode mismatch and layout parasitics, improving efficiency consistency across temperature (–50 to +150 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7401DN-T1-GE3 | RDS(on) = 11.5 mΩ @ 4.5 V; same PowerPAK 1212-8 package; no integrated Schottky diode. | Requires external Schottky for synchronous rectification; higher total solution size and BOM count. | Select when discrete diode control or higher VDS margin (40 V) is needed; not drop-in for SkyFET®-dependent designs. |
| SiR872DP-T1-GE3 | 30 V, RDS(on) = 8.0 mΩ @ 10 V, 10.5 mΩ @ 4.5 V; PowerPAK® 1212-8; no integrated Schottky. | Lacks monolithic diode; superior RDS(on) but requires external diode and larger layout area for equivalent function. | Choose for highest efficiency in gate-driven-only applications; avoid if SkyFET®-enabled simplicity or dead-time loss reduction is required. |
Compared with SIS782DN-T1-GE3, Si7401DN-T1-GE3 offers higher VDS headroom but adds external diode complexity, while SiR872DP-T1-GE3 improves conduction loss but sacrifices the integrated Schottky's dead-time optimization-making SIS782DN-T1-GE3 uniquely suited for compact, high-efficiency synchronous rectification where diode integration directly reduces system-level losses and layout area.
Availability
SIS782DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC system power, memory regulation, and synchronous rectifier applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIS782DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal robustness, and reliability in demanding applications.
The SIS782DN-T1-GE3 belongs to Vishay's SkyFET® family of monolithic MOSFET + Schottky devices, engineered specifically for high-frequency, space-constrained DC-DC conversion in portable computing and advanced POL systems.
FAQ
What is the maximum continuous drain current rating for SIS782DN-T1-GE3 at 70 °C case temperature?
The SIS782DN-T1-GE3 is rated for 16 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 16 A value at TC = 25 °C and is validated under steady-state thermal conditions with proper PCB copper area. The SIS782DN-T1-GE3 maintains this current capability due to its low RthJC of 2.4 °C/W, enabling efficient heat transfer to the board.
Does SIS782DN-T1-GE3 require an external Schottky diode for synchronous rectification?
No, the SIS782DN-T1-GE3 does not require an external Schottky diode because it integrates a monolithic SkyFET® Schottky diode on the same die as the MOSFET. This integrated diode provides VSD = 0.44–0.55 V at 2 A and trr = 18–35 ns, eliminating external diode placement and associated layout parasitics. The SIS782DN-T1-GE3 is designed to operate as a complete synchronous rectifier switch without additional diode components.
What is the gate threshold voltage range for SIS782DN-T1-GE3, and how does it affect 4.5 V gate drive compatibility?
The gate threshold voltage (VGS(th)) for SIS782DN-T1-GE3 is specified from 1.0 V to 2.3 V at ID = 250 μA. This low and tightly bounded range ensures reliable turn-on with standard 4.5 V logic-level gate drivers, even under worst-case process and temperature variations. The SIS782DN-T1-GE3 achieves full enhancement and low RDS(on) (12.0 mΩ max) at 4.5 V, making it fully compatible with common PWM controller outputs.
How does the PowerPAK® 1212-8 package of SIS782DN-T1-GE3 improve thermal performance compared to TSSOP-8?
The PowerPAK® 1212-8 package of SIS782DN-T1-GE3 achieves RthJC = 2.4 °C/W (typical), which is over 20× better than typical TSSOP-8 packages (~52 °C/W). Its exposed copper drain pad provides a direct thermal path to the PCB, reducing junction-to-board resistance and enabling >25 W power dissipation with minimal copper area. The SIS782DN-T1-GE3 leverages this to sustain 16 A continuously where TSSOP-8 alternatives would thermally saturate.
Is SIS782DN-T1-GE3 suitable for use in automotive infotainment power supplies?
The SIS782DN-T1-GE3 is not qualified for automotive applications per AEC-Q101 and lacks automotive-grade qualification documentation. Its operating junction temperature range (–50 to +150 °C) meets some automotive ambient requirements, but Vishay specifies it for computing and industrial power applications. For automotive infotainment, designers should select AEC-Q101-qualified alternatives. The SIS782DN-T1-GE3 remains appropriate for commercial notebook and industrial DC-DC systems.
SIS782DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1025 pF @ 15 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 41W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS782DN-T1-GE3 FAQ
1.How can I place an order for SIS782DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS782DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS782DN-T1-GE3 reliable?
The price and inventory of SIS782DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS782DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS782DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS782DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS782DN-T1-GE3?
SIS782DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS782DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS782DN-T1-GE3?
For technical support, including SIS782DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS782DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS782DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS782DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS782DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS782DN-T1-GE3?
All SIS782DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS782DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS782DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS782DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIS782DN-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
