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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS822DNT-T1-GE3

Name: SIS822DNT-T1-GE3
Brand: Vishay Siliconix
SKU: SIS822DNT-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS822DNT-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS822DNT-T1-GE3.pdf

Description:: MOSFET N-CH 30V 12A PPAK1212-8

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Product details

Overview

SIS822DNT-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in a PowerPAK® 1212-8T package, rated for 12 A continuous drain current at T_C = 25 °C, with R_DS(on) of 0.024 Ω at V_GS = 10 V and 0.030 Ω at V_GS = 4.5 V, optimized for notebook PC system power and synchronous buck high-side switching.

For engineers reviewing the SIS822DNT-T1-GE3 datasheet, SIS822DNT-T1-GE3 pinout, SIS822DNT-T1-GE3 application, or SIS822DNT-T1-GE3 equivalent, this device supports high-efficiency load switching and high-side DC-DC conversion where low gate charge (3.8 nC typ. at 4.5 V), thin 0.8 mm profile, and 100 % R_g and UIS testing are critical for thermal and reliability assurance.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low R_DS(on) and fast switching with Q_g = 3.8 nC (V_GS = 4.5 V) and t_r/t_f ≤ 20 ns. Its gate threshold voltage (1–2.5 V) and ±20 V V_GS rating support standard logic-level and 5 V gate drive compatibility.

The PowerPAK 1212-8T package features exposed copper drain pads on the bottom side for enhanced thermal conduction, with R_thJC = 6.5 °C/W (typ.) and R_thJA = 32 °C/W (t ≤ 10 s), enabling compact high-power-density designs in thermally constrained notebook platforms.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails and 5/3.3 V output synchronous buck stages.
R_DS(on) @ V_GS = 10 V	0.024 Ω max - Enables <190 mW conduction loss at 7.8 A, critical for high-efficiency notebook CPU/GPU VRMs.
R_DS(on) @ V_GS = 4.5 V	0.030 Ω max - Ensures robust on-state performance with 5 V or logic-level gate drivers without level-shifting.
Q_g typ.	3.8 nC at V_GS = 4.5 V - Low gate charge reduces driver power loss and enables >1 MHz switching in compact converters.
I_D continuous	12 A at T_C = 25 °C - Supports high-current load switch and high-side switch applications with external heatsinking.
R_thJC	6.5 °C/W typical - Allows direct thermal path from die to PCB copper, essential for maintaining T_J < 150 °C under sustained load.
V_GS(th)	1–2.5 V - Ensures reliable turn-on with standard 3.3 V or 5 V control signals and stable operation across temperature.

Pinout & Package

Package: PowerPAK® 1212-8T - leadless, surface-mount, 3.3 mm × 3.3 mm × 0.8 mm thin-profile package with exposed drain copper on the bottom side for thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four exposed-drain terminals on bottom side provide low-inductance, high-current return path and primary thermal conduction path.
4 (top-side)	Gate (G)	Single top-side gate pad enables standard pick-and-place and routing; gate resistance R_g = 1.5–4.5 Ω ensures controlled turn-on/turn-off.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers ultra-low R_DS(on) and high cell density in small footprint, enabling higher power density than planar MOSFETs.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress in real-world loads.
Thin 0.8 mm profile	Reduces board stack height and improves airflow clearance in ultra-thin notebook chassis and stacked power modules.
Exposed drain thermal pad	Provides direct thermal interface to PCB ground plane, achieving 6.5 °C/W junction-to-case resistance without external heatsink.
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709B requirements for environmentally compliant manufacturing.

Applications

System Power Switching	Notebook Load Switch
Use Scenario: Main 12 V or 5 V rail switching in ultrabook mainboard power domains. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to GPU, memory, or I/O subsystems. Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 8–10 A loads; thin profile fits tight Z-height constraints.	Use Scenario: Controlled hot-swap enable for USB-C PD, SSD, or peripheral modules. IC Role / Device Role / Timing Role: Logic-controlled power gate with fast turn-on/turn-off for inrush current limiting and sequencing. Use Value: 3.8 nC Q_g enables clean, jitter-free switching edges; 100 % UIS test ensures reliability during plug-in transients.
Synchronous Buck High-Side	DC-DC Converter Output Stage
Use Scenario: High-side switch in 24 V → 1.2 V CPU VRM with >500 kHz switching frequency. IC Role / Device Role / Timing Role: Fast-switching, low-loss high-side FET paired with complementary low-side MOSFET. Use Value: 15 ns t_d(on) and 10 ns t_f at V_GEN = 10 V minimize dead-time losses; C_iss = 435 pF supports stable gate drive design.	Use Scenario: Secondary-side synchronous rectification in isolated DC-DC modules for embedded computing. IC Role / Device Role / Timing Role: Efficient body-diode-replacement switch leveraging low V_SD = 0.8–1.2 V and fast trr = 15–25 ns. Use Value: Body diode recovery Q_rr = 7–12 nC reduces reverse recovery loss; 4.2 A IS rating supports bidirectional current capability.

System Power Switching

Notebook Load Switch

Use Scenario: Main 12 V or 5 V rail switching in ultrabook mainboard power domains.

IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to GPU, memory, or I/O subsystems.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 8–10 A loads; thin profile fits tight Z-height constraints.

Use Scenario: Controlled hot-swap enable for USB-C PD, SSD, or peripheral modules.

IC Role / Device Role / Timing Role: Logic-controlled power gate with fast turn-on/turn-off for inrush current limiting and sequencing.

Use Value: 3.8 nC Q_g enables clean, jitter-free switching edges; 100 % UIS test ensures reliability during plug-in transients.

Synchronous Buck High-Side

DC-DC Converter Output Stage

Use Scenario: High-side switch in 24 V → 1.2 V CPU VRM with >500 kHz switching frequency.

IC Role / Device Role / Timing Role: Fast-switching, low-loss high-side FET paired with complementary low-side MOSFET.

Use Value: 15 ns t_d(on) and 10 ns t_f at V_GEN = 10 V minimize dead-time losses; C_iss = 435 pF supports stable gate drive design.

Use Scenario: Secondary-side synchronous rectification in isolated DC-DC modules for embedded computing.

IC Role / Device Role / Timing Role: Efficient body-diode-replacement switch leveraging low V_SD = 0.8–1.2 V and fast trr = 15–25 ns.

Use Value: Body diode recovery Q_rr = 7–12 nC reduces reverse recovery loss; 4.2 A IS rating supports bidirectional current capability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 0.021 Ω @ 10 V, Q_g = 4.3 nC, same PowerPAK 1212-8T package	Marginally lower conduction loss but higher gate charge; slightly reduced efficiency at >1 MHz switching	Preferred when lowest possible R_DS(on) dominates over gate drive loss in fixed-frequency VRMs.
IRLML6344TRPBF	R_DS(on) = 0.035 Ω @ 4.5 V, Q_g = 2.6 nC, SOT-23 package, 4.2 A I_D	Lower current rating and higher R_DS(on); limited thermal capacity due to smaller package	Only suitable for sub-3 A load switches where board space is more critical than power density.

Compared with SiR872DP-T1-GE3 and IRLML6344TRPBF, the SIS822DNT-T1-GE3 delivers optimal balance of low R_DS(on), moderate Q_g, and 12 A current handling in a thermally efficient 1212-8T package-making it uniquely suited for notebook system power and high-side buck stages where both conduction and switching losses must be minimized simultaneously.

Availability

SIS822DNT-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC system power, synchronous buck high-side switching, and high-current load switching requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SIS822DNT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and miniaturized solutions.

The SIS822DNT-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-density, thermally demanding portable and computing power systems where low profile, low R_DS(on), and robust UIS performance are mandatory.

FAQ

What is the maximum continuous drain current rating for SIS822DNT-T1-GE3 at 70 °C case temperature?

The SIS822DNT-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C per its Absolute Maximum Ratings table. This rating reflects derating from the 15.6 W P_D limit at T_C = 25 °C and accounts for thermal resistance and safe operating area constraints under steady-state conditions.

Does SIS822DNT-T1-GE3 require a gate driver for 3.3 V microcontroller operation?

Yes, the SIS822DNT-T1-GE3 can be driven directly by a 3.3 V microcontroller GPIO because its V_GS(th) is specified from 1 V to 2.5 V and R_DS(on) remains low (0.030 Ω max) at V_GS = 4.5 V. However, for optimal switching speed and minimal Miller plateau time, a dedicated gate driver is recommended in high-frequency (>500 kHz) applications involving the SIS822DNT-T1-GE3.

What is the thermal resistance from junction to ambient for SIS822DNT-T1-GE3 under standard mounting conditions?

The SIS822DNT-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 39 °C/W for t ≤ 10 s on a 1" × 1" FR4 board, with a typical value of 32 °C/W. This value assumes surface mounting per Vishay's recommended pad layout (Document #66832) and is critical for estimating junction temperature rise in thermally constrained notebook PCB layouts.

Is SIS822DNT-T1-GE3 suitable for synchronous rectification in DC-DC converters?

Yes, the SIS822DNT-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on), fast body diode recovery (t_rr = 15–25 ns), and low Q_rr (7–12 nC). Its 4.2 A continuous source-drain diode current rating and V_SD = 0.8–1.2 V at I_S = 6.3 A enable efficient replacement of Schottky diodes in secondary-side synchronous buck or flyback converters using the SIS822DNT-T1-GE3.

What does "100 % R_g and UIS tested" mean for SIS822DNT-T1-GE3?

"100 % R_g and UIS tested" means every unit of SIS822DNT-T1-GE3 undergoes production screening for gate resistance (1.5–4.5 Ω) and unclamped inductive switching (UIS) energy (E_AS = 1.25 mJ). This ensures consistent gate drive behavior and guaranteed ruggedness against inductive turn-off transients-critical for reliability in notebook power circuits where load dumps or hot-plug events occur.

SIS822DNT-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 435 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 15.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS822DNT-T1-GE3 FAQ

1.How can I place an order for SIS822DNT-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS822DNT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS822DNT-T1-GE3 reliable?

The price and inventory of SIS822DNT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS822DNT-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS822DNT-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS822DNT-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS822DNT-T1-GE3?

SIS822DNT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS822DNT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS822DNT-T1-GE3?

For technical support, including SIS822DNT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS822DNT-T1-GE3 requirements.

6.How does Aetrix verify that SIS822DNT-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS822DNT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS822DNT-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS822DNT-T1-GE3?

All SIS822DNT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS822DNT-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS822DNT-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS822DNT-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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