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Vishay Siliconix SIS890ADN-T1-GE3
- Part No.:
- SIS890ADN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS890ADN-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 7.6A/24.7A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,707
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Product details
Overview
SIS890ADN-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 0.0255 Ω at VGS = 10 V, Qg = 8.8 nC (at 4.5 V), and 24.7 A continuous drain current (TC = 25 °C). It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.
For engineers reviewing the SIS890ADN-T1-GE3 datasheet, SIS890ADN-T1-GE3 pinout, SIS890ADN-T1-GE3 application, or SIS890ADN-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100% Rg and UIS testing, and suitability for thermally constrained motor drive and load switch designs requiring stable 100 V operation.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology optimized for minimal conduction and switching losses. Its gate charge profile supports fast turn-on/turn-off with td(on) = 9 ns and tf = 4 ns (VGEN = 10 V), while body diode characteristics-VSD = 0.78 V (IS = 5 A), trr = 29 ns-enable efficient synchronous rectification.
The device features a leadless PowerPAK 1212-8 package with exposed copper drain pads on the bottom side, achieving RthJC = 2.4 °C/W (typical) and RthJA = 26 °C/W (t ≤ 10 s). Thermal performance is validated under surface-mount conditions on 1" × 1" FR4 board per JEDEC JESD51-2.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; enables use in 48 V input DC/DC and industrial motor drive bus lines. |
| RDS(on) @ 10 V | 0.0255 Ω - Low conduction loss at full gate drive; yields <1 W I²R loss at 20 A continuous current. |
| Qg @ 4.5 V | 8.8 nC - Enables efficient gate driving from 3.3 V or 5 V controllers without external level-shifting. |
| ID (continuous) | 24.7 A @ TC = 25 °C - Supports high-current primary-side switching in compact 1212 footprint. |
| Ciss | 1330 pF - Input capacitance impacts gate driver sizing and EMI filtering requirements in hard-switched topologies. |
| VGS(th) | 1–2.5 V - Ensures reliable enhancement-mode turn-on with standard logic-level gate drivers. |
| RthJC | 2.4 °C/W - Enables direct thermal coupling to heatsink or PCB copper; critical for sustained >15 W power dissipation. |
Pinout & Package
PowerPAK® 1212-8 is a leadless, surface-mount package measuring 3.3 mm × 3.3 mm × 1.04 mm (max), with exposed drain copper on the bottom side for enhanced thermal and electrical performance. The top-side terminals are arranged in a single-row configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source connections reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four exposed drain terminals on bottom side provide low-inductance, high-current return path to PCB ground plane. |
| 4 | Gate (G) | Single gate terminal located adjacent to source pins; requires controlled trace routing to minimize ringing and EMI. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on) × Qoss FOM for reduced switching energy in high-frequency DC/DC converters. |
| 100 % Rg tested | Ensures gate resistance consistency (0.3–1.5 Ω), critical for predictable gate drive timing and EMI control. |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to 12 A avalanche current and 7.2 mJ energy. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912). |
| Low VSD body diode | VSD = 0.78 V @ IS = 5 A enables efficient freewheeling in synchronous rectifier mode without external Schottky. |
Applications
| Server VRM Primary Switch | Industrial Motor Drive High-Side |
|---|---|
Use Scenario: Primary-side switch in 48 V input, multiphase buck converter supplying CPU core voltage in data center servers. IC Role / Device Role / Timing Role: High-speed, high-current power switch operating at 500 kHz–1 MHz with precise dead-time control. Use Value: Low Qg (8.8 nC) and RDS(on) (0.0255 Ω) minimize conduction + switching losses, enabling >95 % efficiency at 100 A output. |
Use Scenario: High-side switch controlling 24–48 V brushed DC motors in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Load switch with integrated body diode for bidirectional current handling during motor coast/deceleration. Use Value: 100 % UIS-tested ruggedness ensures reliability under inductive kickback; VSD = 0.78 V reduces freewheeling losses vs. discrete diodes. |
| USB-C PD Fast Charger Sync Rectifier | Automotive Body Control Module Load Switch |
Use Scenario: Secondary-side synchronous rectifier in 100 W USB-C Power Delivery adapter with GaN primary stage. IC Role / Device Role / Timing Role: Low-Vth (1–2.5 V) N-channel MOSFET driven by dedicated sync rectifier controller. Use Value: Tuned RDS(on) × Qoss FOM minimizes reverse recovery loss and improves light-load efficiency over 10–100 % load range. |
Use Scenario: 12 V battery-powered load switch for LED lighting or solenoid actuation in automotive BCMs. IC Role / Device Role / Timing Role: Protected high-side switch with fast turn-off (<8 ns fall time) to meet ISO 7637-2 pulse immunity requirements. Use Value: 100 V VDS rating provides margin against load-dump transients (up to ±100 V); RthJC = 2.4 °C/W supports 2.4 W dissipation without heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR870DP-T1-GE3 | RDS(on) = 0.022 Ω @ 10 V (lower), but Qg = 12.5 nC @ 4.5 V (higher); same PowerPAK 1212-8 package. | Better conduction loss, but higher gate drive demand; less optimal for 3.3 V controller interfaces. | Select when minimizing I²R loss dominates over gate drive simplicity and switching loss. |
| IRF7470PBF | SO-8 package; RDS(on) = 0.028 Ω @ 10 V; Qg = 10.2 nC @ 4.5 V; RthJA = 62 °C/W (much higher). | Larger footprint, inferior thermal performance, and no 100 % UIS test coverage. | Choose only if SO-8 compatibility is mandatory and power density is not constrained. |
Compared with SiR870DP-T1-GE3, SIS890ADN-T1-GE3 trades marginal RDS(on) increase for significantly lower Qg, easing gate driver design and reducing switching loss in high-frequency operation; versus IRF7470PBF, it delivers 2.5× better thermal resistance and verified avalanche ruggedness in a smaller, more modern package.
Availability
SIS890ADN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and USB-C PD fast chargers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIS890ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.
The SIS890ADN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-efficiency power conversion where low RDS(on) × Qoss and robust UIS performance are critical.
FAQ
What is the maximum continuous drain current rating for SIS890ADN-T1-GE3 at 70 °C case temperature?
The SIS890ADN-T1-GE3 supports 19.8 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8 package and must be applied when ambient or heatsink conditions elevate case temperature beyond 25 °C. Designers should verify junction temperature using RthJC = 2.4 °C/W and actual power dissipation.
Does SIS890ADN-T1-GE3 have a specified body diode reverse recovery time (trr)?
Yes, the SIS890ADN-T1-GE3 specifies trr = 29 ns (typical) at IF = 10 A, di/dt = 100 A/μs, and TJ = 25 °C. This value is measured under standardized conditions and supports accurate modeling of freewheeling losses in synchronous rectifier applications. The corresponding Qrr is 39 nC (typical).
Is SIS890ADN-T1-GE3 suitable for use with 3.3 V gate drive voltage?
Yes, the SIS890ADN-T1-GE3 is fully characterized at VGS = 4.5 V, with RDS(on) = 0.0290 Ω (max) and Qg = 8.8 nC (typical). Its VGS(th) range of 1–2.5 V ensures reliable turn-on with 3.3 V logic, though designers should confirm gate driver peak current capability (>1 A) to achieve specified tf = 4 ns.
What is the thermal resistance from junction to case (RthJC) for SIS890ADN-T1-GE3?
The SIS890ADN-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 2.4 °C/W, with a maximum of 3.2 °C/W, measured from junction to the drain pad. This low value is enabled by the PowerPAK 1212-8's exposed copper drain terminals and is critical for transferring heat directly to the PCB or heatsink in high-power-density designs.
How is avalanche ruggedness validated for SIS890ADN-T1-GE3?
The SIS890ADN-T1-GE3 undergoes 100 % Unclamped Inductive Switching (UIS) testing per JEDEC standard. It is rated for single-pulse avalanche current IAS = 12 A and energy EAS = 7.2 mJ, ensuring robustness against inductive load transients in motor drive and DC/DC converter applications without external protection.
SIS890ADN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.6A (Ta), 24.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 25.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1330 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 39W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS890ADN-T1-GE3 FAQ
1.How can I place an order for SIS890ADN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS890ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS890ADN-T1-GE3 reliable?
The price and inventory of SIS890ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS890ADN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS890ADN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS890ADN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS890ADN-T1-GE3?
SIS890ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS890ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS890ADN-T1-GE3?
For technical support, including SIS890ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS890ADN-T1-GE3 requirements.
6.How does Aetrix verify that SIS890ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS890ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS890ADN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS890ADN-T1-GE3?
All SIS890ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS890ADN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS890ADN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS890ADN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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