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Vishay Siliconix SISA10BDN-T1-GE3
- Part No.:
- SISA10BDN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SISA10BDN-T1-GE3.pdf
- Description:
- N-CHANNEL 30-V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:7,472
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Product details
Overview
SISA10BDN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8PT package, delivering RDS(on) = 3.6 mΩ at VGS = 10 V and 5.0 mΩ at VGS = 4.5 V, with 104 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SISA10BDN-T1-GE3 datasheet, SISA10BDN-T1-GE3 pinout, SISA10BDN-T1-GE3 application, or SISA10BDN-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, 11.7 nC total gate charge (VGS = 4.5 V), robust 20 mJ single-pulse avalanche energy, and thermal performance validated on 1" × 1" FR4 board per JEDEC JESD51-2.
Technical Context
This MOSFET employs trench-gate silicon technology with optimized cell pitch and reduced gate-drain charge (Qgd = 2.8 nC) to minimize switching losses in hard-switched topologies. Its Crss/Ciss ratio of 0.04–0.08 supports stable operation under high dv/dt conditions typical in VRMs and battery protection circuits.
The device features 100% Rg and UIS tested units, a gate-source voltage rating of +20 V / –16 V, and a body diode with trr = 38–70 ns and Qrr = 36–70 nC-critical for minimizing reverse recovery losses in synchronous buck stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in industrial DC/DC systems. |
| RDS(on) @ 10 V | 3.6 mΩ max - Enables <1 W conduction loss at 100 A, supporting high-current VRM phases without forced airflow. |
| RDS(on) @ 4.5 V | 5.0 mΩ max - Ensures low on-resistance under 5 V logic-level gate drive, eliminating need for external level shifters. |
| Qg @ 4.5 V | 11.7 nC typ - Reduces gate drive power and enables efficient operation with standard PWM controllers like TI UCC2753x. |
| ID (continuous) | 104 A @ TC = 25 °C - Supports high-density power stages where thermal coupling to PCB copper is tightly controlled. |
| EAS | 20 mJ - Withstands single-pulse inductive energy events in battery disconnect and hot-swap applications without failure. |
| RthJC | 1.6 °C/W typ - Enables direct thermal path to heatsink or copper plane, critical for maintaining TJ < 150 °C in compact 1212 packages. |
Pinout & Package
PowerPAK® 1212-8PT is a leadless surface-mount package with exposed drain paddle on bottom side; dimensions are 3.3 mm × 3.3 mm × 0.75 mm. The eight terminals are arranged in dual-row configuration with drain (D), source (S), and gate (G) connections as shown below.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Low-impedance return path for load current; four parallel S pins reduce source inductance and improve current sharing in paralleled configurations. |
| 5, 6, 7, 8 | Drain (D) | High-current output node connected to internal die drain metallization; exposed copper paddle provides primary thermal conduction path to PCB. |
| Gate (center pad, top-side) | Gate (G) | Single top-side gate pad; requires precise solder mask definition to avoid shorting to adjacent D/S pads during reflow. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 25% lower RDS(on) × Qg figure-of-merit vs. prior generation, directly reducing combined conduction and switching losses. |
| 100% Rg and UIS tested | Ensures gate resistance consistency (0.3–2.6 Ω) and ruggedness against unclamped inductive switching stress in real-world power stage faults. |
| Low Qgd/Qg ratio | 24% (2.8 nC / 11.7 nC) minimizes Miller plateau duration, enabling faster turn-off and improved noise immunity in high-frequency (>500 kHz) operation. |
| Body diode trr & Qrr | 38–70 ns / 36–70 nC supports zero-voltage switching (ZVS) transitions and reduces cross-conduction losses in synchronous rectifiers. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912 for green electronics manufacturing. |
Applications
| Server VRM Phase Legs | USB PD 3.1 Buck Converters |
|---|---|
Use Scenario: High-current, high-frequency (up to 1 MHz) multiphase buck converter supplying CPU/GPU core voltage in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch handling up to 100 A per phase with minimal conduction loss and fast body diode recovery. Use Value: Achieves >95% efficiency at 12 V input / 0.8 V output by combining 3.6 mΩ RDS(on) and 11.7 nC Qg, reducing thermal footprint versus discrete alternatives. |
Use Scenario: Secondary-side synchronous rectifier in 140 W USB Power Delivery 3.1 fixed- and variable-output AC/DC adapters. IC Role / Device Role / Timing Role: N-channel MOSFET driven by dedicated SR controller (e.g., MP6908) to replace Schottky diode in flyback secondary. Use Value: Eliminates 0.4–0.6 V forward drop, cutting rectifier loss by >60% and enabling compact 30 mm × 30 mm adapter designs. |
| Battery Protection ICs | Industrial 24 V DC/DC Modules |
Use Scenario: Back-to-back configuration in smart battery packs (e.g., Li-ion 4S–12S) for overcurrent, short-circuit, and reverse polarity protection. IC Role / Device Role / Timing Role: High-side and low-side protection switch with integrated 20 mJ avalanche capability to absorb fault energy without external snubbers. Use Value: Survives 150 A pulsed drain current (IDM) and 20 mJ EAS, enabling single-device protection for 20 A continuous battery loads. |
Use Scenario: Primary-side high-efficiency buck converter in DIN-rail mounted 24 V industrial power supplies powering PLC I/O modules. IC Role / Device Role / Timing Role: Main switching FET operating at 300–500 kHz with 30 V VDS rating matching 24 V nominal input plus surge margin. Use Value: Maintains RDS(on) stability across –55 °C to +150 °C junction range, ensuring reliable start-up in cold ambient and sustained operation in enclosed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 4.2 mΩ @ 4.5 V; Qg = 13.5 nC; PowerPAK SO-8L package (3.3 × 3.3 mm same footprint but different pinout). | Higher gate charge increases driver loss; SO-8L has higher RthJA (40 °C/W vs. 26 °C/W), limiting power density in thermally constrained layouts. | Select when legacy SO-8L layout reuse is required and 10% higher RDS(on) is acceptable for cost-sensitive designs. |
| DMTH3016LSD-13 | RDS(on) = 3.0 mΩ @ 4.5 V; Qg = 15.5 nC; PowerDI 3333 package (3.3 × 3.3 mm, same outline but non-leadless construction). | Higher Qg degrades high-frequency efficiency; non-leadless leads increase parasitic inductance, limiting >1 MHz operation. | Prefer for through-hole prototyping or where reworkability outweighs thermal performance; not recommended for production DC/DC modules. |
Compared with IRLHS6342TRPBF and DMTH3016LSD-13, SISA10BDN-T1-GE3 offers the lowest RDS(on) × Qg product (17.6 mΩ·nC) and best thermal resistance (RthJC = 1.6 °C/W), making it optimal for space-constrained, high-efficiency synchronous rectification where thermal management is critical.
Availability
SISA10BDN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, USB PD 3.1 adapters, and industrial 24 V DC/DC modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SISA10BDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.
The SISA10BDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-power-density DC/DC conversion, synchronous rectification, and battery protection where low RDS(on), fast switching, and rugged avalanche performance are mandatory.
FAQ
What is the maximum continuous drain current rating for SISA10BDN-T1-GE3 at 70 °C case temperature?
The SISA10BDN-T1-GE3 supports 83 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8PT package and ensures safe operation with adequate PCB copper area and airflow. At TC = 25 °C, the rating rises to 104 A. Engineers must verify actual board-level thermal resistance to confirm achievable current in their layout.
Does SISA10BDN-T1-GE3 require a gate resistor for reliable switching in a 500 kHz synchronous buck converter?
Yes - while the SISA10BDN-T1-GE3 has low intrinsic gate resistance (0.3–2.6 Ω), a series gate resistor (typically 1–5 Ω) is recommended to dampen ringing, control dV/dt, and prevent shoot-through in high-frequency synchronous buck converters. The 11.7 nC Qg at 4.5 V and 2.8 nC Qgd make it responsive to moderate gate drive strength, but external Rg remains essential for EMI control and robust timing margin in production systems using SISA10BDN-T1-GE3.
Can SISA10BDN-T1-GE3 be used in a back-to-back configuration for bidirectional battery protection?
Yes - the SISA10BDN-T1-GE3 is suitable for back-to-back N-channel configuration in battery protection circuits due to its symmetric VGS rating (±16 V), 20 mJ single-pulse avalanche energy, and 150 A pulsed drain current (IDM). When paired with a dedicated protection IC like the BQ77PL900, the SISA10BDN-T1-GE3 handles both charge and discharge paths while surviving fault transients. Its 30 V VDS rating supports up to 12S Li-ion packs (max ~50 V) with appropriate voltage clamping.
What is the thermal resistance from junction to ambient (RthJA) for SISA10BDN-T1-GE3 on a standard 1" × 1" FR4 board?
The SISA10BDN-T1-GE3 exhibits a maximum RthJA of 33 °C/W when mounted on a 1" × 1" FR4 board with 1 oz. copper, per JEDEC JESD51-2 test conditions. The typical value is 26 °C/W. This measurement assumes no additional heatsinking and validates the device's suitability for high-power-density applications where board-level copper area is the primary thermal path - critical for accurate thermal modeling of SISA10BDN-T1-GE3 in compact DC/DC modules.
Is SISA10BDN-T1-GE3 pin-compatible with other PowerPAK 1212-8PT MOSFETs such as SiRA10DP?
No - SISA10BDN-T1-GE3 is not pin-compatible with SiRA10DP despite sharing the PowerPAK 1212-8PT footprint. The SISA10BDN-T1-GE3 uses a dual-row terminal arrangement (pins 1–4 = S, 5–8 = D, top-side G), whereas SiRA10DP implements a different pinout with gate on pin 1 and drain/source interleaved. Layout reuse is not possible without redesign. Always verify pin function mapping using the official Vishay SISA10BDN datasheet before substituting SISA10BDN-T1-GE3 in existing designs.
SISA10BDN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 26A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36.2 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1710 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 63W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SISA10BDN-T1-GE3 FAQ
1.How can I place an order for SISA10BDN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISA10BDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISA10BDN-T1-GE3 reliable?
The price and inventory of SISA10BDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISA10BDN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISA10BDN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISA10BDN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISA10BDN-T1-GE3?
SISA10BDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISA10BDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISA10BDN-T1-GE3?
For technical support, including SISA10BDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISA10BDN-T1-GE3 requirements.
6.How does Aetrix verify that SISA10BDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISA10BDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISA10BDN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISA10BDN-T1-GE3?
All SISA10BDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISA10BDN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISA10BDN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISA10BDN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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