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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISA10DN-T1-GE3

Name: SISA10DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISA10DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISA10DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SISA10DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 30A PPAK1212-8

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Product details

Overview

SISA10DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 3.7 mΩ @ V_GS = 10 V and 5.0 mΩ @ V_GS = 4.5 V, with 30 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification in compact DC/DC converters.

For engineers reviewing the SISA10DN-T1-GE3 datasheet, SISA10DN-T1-GE3 pinout, SISA10DN-T1-GE3 application, or SISA10DN-T1-GE3 equivalent, key selection criteria include low gate charge (Q_g = 15.4 nC typ. @ 4.5 V), ultra-low thermal resistance (R_thJC = 2.4 °C/W), and verified 100 % UIS and R_g testing for robust switching in VRMs and embedded power stages.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve sub-4 mΩ on-resistance at 10 V drive while maintaining fast switching dynamics: t_d(on) = 10 ns, t_f = 10 ns, and C_iss = 2425 pF at V_DS = 15 V. Its gate threshold voltage (V_GS(th) = 1.1–2.2 V) supports 4.5 V logic-level drive compatibility.

The PowerPAK 1212-8 package features an exposed copper drain pad on the bottom side for direct thermal conduction, enabling junction-to-case thermal resistance as low as 2.4 °C/W and supporting high-current operation without external heatsinking in space-constrained layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage suitable for 24 V input DC/DC and point-of-load applications
R_DS(on) @ 10 V	3.7 mΩ max - enables <1 W conduction loss at 15 A, critical for high-power-density VRMs
R_DS(on) @ 4.5 V	5.0 mΩ max - ensures efficient operation with standard 5 V or 4.5 V gate drivers
Q_g	15.4 nC typ. @ 4.5 V - reduces gate drive power and switching losses in high-frequency (>500 kHz) converters
I_D (continuous)	30 A @ T_C = 25 °C - supports high-current synchronous rectification without derating at moderate case temperatures
R_thJC	2.4 °C/W max - allows >30 W power dissipation with minimal junction temperature rise when mounted on adequate PCB copper
V_GS(th)	1.1–2.2 V - guarantees turn-on with standard logic-level controllers and avoids false triggering

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package with an exposed drain pad on the bottom side and eight terminals on the periphery. Its 3.3 mm × 3.3 mm footprint is over 40 % smaller than TSSOP-8 while delivering superior thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect directly to the exposed bottom-side copper pad for ultra-low thermal resistance
4 (center top)	Gate (G)	Single gate terminal located adjacent to source pins to minimize gate loop inductance and suppress oscillation

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Enables 3.7 mΩ R_DS(on) at 10 V in 3.3 mm × 3.3 mm footprint - 2× lower on-resistance than prior-gen equivalents
100 % R_g tested	Guarantees gate resistance ≤ 3.4 Ω - ensures consistent turn-on timing and prevents shoot-through in half-bridge configurations
100 % UIS tested	Validates avalanche energy rating of 20 mJ - provides ruggedness against inductive switching transients in DC/DC and motor control
Exposed drain pad	Reduces R_thJC to 2.4 °C/W - enables >30 W power handling with only PCB copper as heatsink
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - suitable for automotive and industrial production

Applications

High-Power-Density DC/DC Converters	Synchronous Rectification
Use Scenario: 12 V–1 V step-down conversion in server CPU VRMs operating at 500–1000 kHz switching frequency. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to minimize conduction loss. Use Value: Achieves >95 % efficiency at 100 A output by reducing R_DS(on)-dominated losses versus discrete diodes or higher-R_DS(on) MOSFETs.	Use Scenario: Secondary-side rectification in isolated 48 V–12 V telecom DC/DC modules with tight thermal constraints. IC Role / Device Role: N-channel MOSFET controlled by dedicated sync rectifier driver to replace flyback diode. Use Value: Delivers 30 A continuous current with <0.5 V forward drop at full load - cutting rectifier loss by >60 % vs. 40 V Schottky.
VRMs for Embedded Processors	Point-of-Load (POL) Regulators
Use Scenario: Multi-phase buck converter supplying core voltage to FPGA or ASIC in networking equipment. IC Role / Device Role: High-current power stage switch in each phase, paired with matching high-side FET. Use Value: Supports 30 A per phase with <1.2 W conduction loss at 15 A - enabling compact 4-phase designs without forced air cooling.	Use Scenario: Compact 5 V–3.3 V or 3.3 V–1.8 V regulation on dense PCBs in industrial PLC I/O modules. IC Role / Device Role: Primary power switch in monolithic or discrete buck regulator with integrated inductor. Use Value: Fits within 12 mm² area while sustaining 20 A peak current - eliminates need for larger SO-8 or DFN5x6 packages.

High-Power-Density DC/DC Converters

Synchronous Rectification

Use Scenario: 12 V–1 V step-down conversion in server CPU VRMs operating at 500–1000 kHz switching frequency.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to minimize conduction loss.

Use Value: Achieves >95 % efficiency at 100 A output by reducing R_DS(on)-dominated losses versus discrete diodes or higher-R_DS(on) MOSFETs.

Use Scenario: Secondary-side rectification in isolated 48 V–12 V telecom DC/DC modules with tight thermal constraints.

IC Role / Device Role: N-channel MOSFET controlled by dedicated sync rectifier driver to replace flyback diode.

Use Value: Delivers 30 A continuous current with <0.5 V forward drop at full load - cutting rectifier loss by >60 % vs. 40 V Schottky.

VRMs for Embedded Processors

Point-of-Load (POL) Regulators

Use Scenario: Multi-phase buck converter supplying core voltage to FPGA or ASIC in networking equipment.

IC Role / Device Role: High-current power stage switch in each phase, paired with matching high-side FET.

Use Value: Supports 30 A per phase with <1.2 W conduction loss at 15 A - enabling compact 4-phase designs without forced air cooling.

Use Scenario: Compact 5 V–3.3 V or 3.3 V–1.8 V regulation on dense PCBs in industrial PLC I/O modules.

IC Role / Device Role: Primary power switch in monolithic or discrete buck regulator with integrated inductor.

Use Value: Fits within 12 mm² area while sustaining 20 A peak current - eliminates need for larger SO-8 or DFN5x6 packages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiRA10DP-T1-GE3	R_DS(on) = 3.8 mΩ @ 10 V; same PowerPAK 1212-8 package; slightly higher Q_g (16.5 nC)	Identical use in VRMs and POLs; marginally higher gate drive loss at >1 MHz	Drop-in alternative if SISA10DN-T1-GE3 is unavailable; verify layout compatibility with identical footprint
IRLHS6342TRPBF	R_DS(on) = 4.2 mΩ @ 4.5 V; PowerPAIR® 3.3×3.3 package; higher C_iss (2700 pF)	Acceptable for <300 kHz applications; less optimal for high-frequency VRMs due to slower switching	Consider where cost sensitivity outweighs 5–10 % efficiency gain; requires revalidation of gate drive strength

Compared with SiRA10DP-T1-GE3, SISA10DN-T1-GE3 offers marginally lower R_DS(on) and gate charge, improving conduction and switching efficiency in high-frequency VRMs; versus IRLHS6342TRPBF, it delivers superior dynamic performance and thermal capability, making it preferred for thermally constrained, high-current POL designs.

Availability

SISA10DN-T1-GE3 is available at Aetrix Electronics and suitable for high-power-density DC/DC converters, synchronous rectification circuits, and VRMs requiring stable component supply across industrial, computing, and telecom production programs.

Supply support for SISA10DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISA10DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in space- and thermally-constrained applications such as server VRMs and telecom POL modules.

FAQ

What is the maximum continuous drain current rating for SISA10DN-T1-GE3 at 70 °C case temperature?

The SISA10DN-T1-GE3 supports 30 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and assumes proper PCB copper layout per Vishay Application Note AN822 for thermal management.

Does SISA10DN-T1-GE3 require a heatsink in typical VRM applications?

No, the SISA10DN-T1-GE3 does not require an external heatsink in most VRM applications when mounted on a 1" × 1" FR4 board with ≥1 oz copper on inner layers. Its R_thJC = 2.4 °C/W and R_thJA = 26 °C/W (typ.) enable junction temperatures below 125 °C at 25 A with only PCB copper as the thermal path.

Is SISA10DN-T1-GE3 compatible with lead-free reflow soldering processes?

Yes, SISA10DN-T1-GE3 is qualified for lead-free reflow per J-STD-020. The recommended peak temperature is 240 °C for 20–40 seconds, with ramp rates ≤6 °C/s. Full profile details are available in Vishay document 73257, and manual soldering with an iron is not recommended due to its leadless PowerPAK 1212-8 construction.

What is the body diode reverse recovery time (t_rr) of SISA10DN-T1-GE3, and why does it matter?

The SISA10DN-T1-GE3 has t_rr = 31–62 ns (typ./max) at I_F = 10 A and di/dt = 100 A/μs. This fast recovery minimizes switching losses and voltage spikes during hard-commutation in synchronous rectifiers, directly improving efficiency and EMI performance in high-frequency DC/DC converters.

Can SISA10DN-T1-GE3 be used in a half-bridge configuration with standard 12 V gate drivers?

Yes, SISA10DN-T1-GE3 supports gate-source voltages up to +20 V, making it fully compatible with standard 12 V gate drivers. Its V_GS(th) range (1.1–2.2 V) ensures reliable enhancement-mode turn-on, and its 100 % R_g test guarantees gate resistance ≤3.4 Ω - critical for matched timing in half-bridge leg pairs.

SISA10DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 2425 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SISA10DN-T1-GE3 FAQ

1.How can I place an order for SISA10DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISA10DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISA10DN-T1-GE3 reliable?

The price and inventory of SISA10DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISA10DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISA10DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISA10DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISA10DN-T1-GE3?

SISA10DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISA10DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISA10DN-T1-GE3?

For technical support, including SISA10DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISA10DN-T1-GE3 requirements.

6.How does Aetrix verify that SISA10DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISA10DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISA10DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISA10DN-T1-GE3?

All SISA10DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISA10DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISA10DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISA10DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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