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Vishay Siliconix SISA12BDN-T1-GE3
- Part No.:
- SISA12BDN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SISA12BDN-T1-GE3.pdf
- Description:
- N-CHANNEL 30-V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:5,950
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Product details
Overview
SISA12BDN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8PT package, delivering RDS(on) = 0.0050 Ω at VGS = 4.5 V and 104 A continuous drain current at TC = 25 °C, optimized for high-efficiency synchronous rectification in compact DC/DC converters.
For engineers reviewing the SISA12BDN-T1-GE3 datasheet, SISA12BDN-T1-GE3 pinout, SISA12BDN-T1-GE3 application, or SISA12BDN-T1-GE3 equivalent, this device is evaluated for low-voltage, high-current power stages where thermal performance, gate charge (Qg = 11.7 nC typ. at 4.5 V), and body diode recovery (trr = 38 ns typ.) are critical selection criteria.
Technical Context
This MOSFET employs trench-based silicon architecture with fully characterized avalanche capability (EAS = 20 mJ) and 100 % Rg and UIS tested screening. Its gate threshold voltage (VGS(th) = 1.2–2.4 V) enables robust 4.5 V logic-level drive compatibility while maintaining tight parametric control across temperature.
The PowerPAK 1212-8PT package features exposed-drain copper pads on the bottom side for direct thermal coupling to PCB planes, achieving RthJC = 1.6 °C/W (typ.) and enabling high-power density layouts without external heatsinks in thermally managed designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V input rail systems and 5 V/3.3 V output stages |
| RDS(on) max @ VGS = 4.5 V | 0.0050 Ω - Enables <10 mW conduction loss at 7 A, critical for VRM efficiency at light-to-moderate loads |
| Qg typ. @ VGS = 4.5 V | 11.7 nC - Low gate charge supports high-frequency switching (>1 MHz) with minimal driver power overhead |
| ID continuous @ TC = 25 °C | 104 A - Supports high-current single-phase buck stages without paralleling, reducing BOM count |
| trr typ. | 38 ns - Fast body diode recovery minimizes shoot-through risk and reduces dead-time losses in synchronous topologies |
| RthJC max | 2.0 °C/W - Enables efficient heat transfer to PCB copper, supporting >60 W dissipation with 2 oz. internal thermal planes |
| VGS(th) | 1.2–2.4 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers, avoiding marginal biasing |
Pinout & Package
PowerPAK® 1212-8PT is a leadless, surface-mount package with dual-side thermal access: top-side source/gate terminals and bottom-side exposed drain paddle. Dimensions: 3.3 mm × 3.3 mm × 0.75 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source connections reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Bottom-exposed drain paddle provides primary thermal path; top-side pins support signal routing and mechanical anchoring |
| G (Gate) | Gate (G) | Single gate terminal located adjacent to source pins-minimizes gate loop inductance for stable high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 23% lower RDS(on) vs. prior generation at same die size, enabling higher current density in fixed footprint |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress |
| Low Qgd/Qgs ratio (0.67) | Improves Miller immunity and enables stable operation with moderate gate resistance without sacrificing switching speed |
| Body diode Qrr = 36 nC typ. | Reduces reverse recovery energy loss by >40% vs. standard MOSFETs, directly improving light-load efficiency in sync rectifiers |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 2a (MSL 2a) |
Applications
| Server VRM Output Stage | High-Density Telecom DC/DC Converter |
|---|---|
Use Scenario: Final-stage 12 V to 1.2 V conversion in dual-phase server VRMs with >300 A total output. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with adaptive dead-time control. Use Value: 0.0050 Ω RDS(on) at 4.5 V drive reduces conduction loss by 18% vs. comparable 3.5 mΩ parts, extending thermal margin under full load. |
Use Scenario: 48 V to 12 V intermediate bus converter in 1 RU telecom shelf with strict airflow constraints. IC Role / Device Role / Timing Role: Primary-side FET in active-clamp forward topology, switching at 350 kHz with zero-voltage transition. Use Value: 38 ns trr and low Qrr minimize body diode conduction loss during ZVS transitions, improving full-load efficiency by 0.4%. |
| Laptop CPU Power Delivery | Battery Protection Circuit |
Use Scenario: Dual-phase 19 V to 1.05 V core supply for mobile CPUs with dynamic voltage scaling. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, driven by integrated controller with 3.3 V logic. Use Value: 1.2–2.4 V VGS(th) ensures clean turn-on with 3.3 V gate drive, eliminating need for level-shifting and reducing layout complexity. |
Use Scenario: Charge/discharge path switch in 3-cell Li-ion battery packs with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: Bidirectional load switch controlling current flow between battery and system load during fault conditions. Use Value: 20 A continuous IS rating and 57 A pulsed IS support high-current discharge pulses (e.g., motor startup) without thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiRA12DP-T1-GE3 | RDS(on) = 0.0042 Ω @ 4.5 V; Qg = 14.5 nC; PowerPAK 8x8 package (5.0 mm × 6.0 mm) | Higher thermal mass but larger footprint; better for >150 W continuous dissipation with heatsink | Select when board space allows larger package and higher steady-state power handling is required |
| IRL8726PBF | RDS(on) = 0.0035 Ω @ 4.5 V; Qg = 22 nC; TO-220AB package; no bottom-side thermal pad | Requires external heatsink; unsuitable for ultra-thin or double-sided thermal designs | Select only for legacy through-hole designs or where manual rework accessibility is mandatory |
Compared with SiRA12DP-T1-GE3 and IRL8726PBF, the SISA12BDN-T1-GE3 offers optimal balance of low-profile thermal performance, logic-level drive compatibility, and gate charge efficiency-making it preferred for space-constrained, high-frequency synchronous rectifiers where PCB copper serves as the primary heatsink.
Availability
SISA12BDN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and laptop CPU power delivery requiring stable component supply and consistent parametric performance across production lots.
Supply support for SISA12BDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability validation.
The SISA12BDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-efficiency, high-density DC/DC conversion in computing, communications, and portable power systems.
FAQ
What is the maximum junction temperature rating for SISA12BDN-T1-GE3?
The SISA12BDN-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C. This rating is validated per JEDEC JESD22-A108 and supported by thermal characterization data showing stable RDS(on) behavior up to 150 °C, making SISA12BDN-T1-GE3 suitable for high-ambient environments such as enclosed server chassis or sealed telecom modules.
Does SISA12BDN-T1-GE3 support 3.3 V gate drive in practice?
Yes, SISA12BDN-T1-GE3 supports reliable turn-on with 3.3 V gate drive due to its guaranteed VGS(th) range of 1.2–2.4 V and RDS(on) = 0.0050 Ω max at VGS = 4.5 V. At 3.3 V, typical RDS(on) remains ≤ 0.0075 Ω (per characterization curves), enabling functional operation in logic-level designs where gate drive headroom is constrained.
How does the PowerPAK 1212-8PT package affect PCB layout for SISA12BDN-T1-GE3?
The PowerPAK 1212-8PT package requires specific PCB pad geometry: recommended minimum pads are 0.094" × 0.152" (2.39 mm × 3.86 mm) for the drain paddle, per Vishay Application Note AN826. Thermal vias under the drain pad (≥6×0.3 mm) to inner ground/power planes are essential to achieve the specified RthJA of 26 °C/W and prevent localized hot spots during 104 A operation.
Is SISA12BDN-T1-GE3 suitable for avalanche-prone circuits like inductive load switching?
Yes, SISA12BDN-T1-GE3 is 100 % UIS (unclamped inductive switching) tested with rated IAS = 20 A and EAS = 20 mJ. These values are measured under standardized conditions (L = 0.1 mH, VDD = 30 V), confirming robustness for flyback snubbers, solenoid drivers, and other inductive switching applications where voltage overshoot exceeds VDS.
What is the body diode forward voltage of SISA12BDN-T1-GE3 at 10 A?
The body diode forward voltage (VSD) of SISA12BDN-T1-GE3 is specified as 0.75–1.1 V at IS = 10 A and TJ = 25 °C. This low VSD reflects optimized epitaxial structure and contributes to reduced conduction loss during freewheeling intervals in synchronous buck converters, especially at light loads where diode conduction dominates.
SISA12BDN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Ta), 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1470 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SISA12BDN-T1-GE3 FAQ
1.How can I place an order for SISA12BDN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISA12BDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISA12BDN-T1-GE3 reliable?
The price and inventory of SISA12BDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISA12BDN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISA12BDN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISA12BDN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISA12BDN-T1-GE3?
SISA12BDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISA12BDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISA12BDN-T1-GE3?
For technical support, including SISA12BDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISA12BDN-T1-GE3 requirements.
6.How does Aetrix verify that SISA12BDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISA12BDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISA12BDN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISA12BDN-T1-GE3?
All SISA12BDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISA12BDN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISA12BDN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISA12BDN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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