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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISA18BDN-T1-GE3

Name: SISA18BDN-T1-GE3
Brand: Vishay Siliconix
SKU: SISA18BDN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISA18BDN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: SISA18BDN-T1-GE3.pdf

Description:: N-CHANNEL 30 V (D-S) MOSFET POWE

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Product details

Overview

SISA18BDN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8PT package, delivering R_DS(on) = 6.83 mΩ at V_GS = 10 V and 10.5 mΩ at V_GS = 4.5 V, with 60 A continuous drain current at T_C = 25 °C, optimized for high-efficiency synchronous rectification and DC/DC load switching.

For engineers reviewing the SISA18BDN-T1-GE3 datasheet, SISA18BDN-T1-GE3 pinout, SISA18BDN-T1-GE3 application, or SISA18BDN-T1-GE3 equivalent, key selection criteria include its low gate charge (Q_g = 6.2 nC at 4.5 V), robust avalanche rating (E_AS = 6 mJ), and thermal performance (R_thJC = 2.7 °C/W), critical for compact, high-current power stages.

Technical Context

This MOSFET employs a trench-based silicon structure enabling high cell density and low on-resistance while maintaining fast switching via low C_iss (680 pF) and Crss/C_iss ratio (0.08–0.16). Its gate threshold voltage (V_GS(th) = 1.2–2.4 V) supports 4.5 V logic-level drive compatibility.

The device integrates a body diode with V_SD = 0.8–1.1 V at I_S = 5 A and t_rr = 15–30 ns, enabling efficient reverse recovery in synchronous buck topologies. Thermal design leverages the exposed-drain PowerPAK 1212-8PT package with direct case-to-heatsink conduction path.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications with margin
R_DS(on) @ 10 V	6.83 mΩ - Enables <1 W conduction loss at 40 A in high-current load switches
R_DS(on) @ 4.5 V	10.5 mΩ - Ensures full enhancement with standard 5 V microcontroller GPIOs
Q_g	6.2 nC @ 4.5 V - Reduces gate drive power and enables >1 MHz switching in DC/DC converters
I_D (continuous)	60 A @ T_C = 25 °C - Supports high-current POL modules without forced air cooling
E_AS	6 mJ - Withstands single-pulse inductive energy during hard-switching transitions
R_thJC	2.7 °C/W - Allows direct mounting to copper heatsink for thermal management in space-constrained designs

Pinout & Package

PowerPAK® 1212-8PT is a leadless, surface-mount package with an exposed drain pad on the bottom side for thermal and electrical connection. Dimensions: 3.3 mm × 3.3 mm × 0.75 mm. The package uses copper substrate construction with no plating on the singulated edge of the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt operation
5, 6, 7, 8	Drain	Four exposed drain terminals connect directly to PCB copper pour for minimal R_DS(on) and thermal resistance
G	Gate	Single gate pad located adjacent to source terminals to minimize gate loop inductance

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables 30% lower R_DS(on) vs. prior generation at same die size, improving power density
100% R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress
Low Q_gd/Q_g ratio	Q_gd = 2.3 nC / Q_g = 6.2 nC → 37% - Reduces Miller plateau time and improves hard-switching robustness
Body diode t_rr = 15–30 ns	Minimizes reverse recovery losses and associated voltage spikes in synchronous rectifier mode
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C for green electronics manufacturing

Applications

High-Density DC/DC Converters	Synchronous Rectification
Use Scenario: 12 V–48 V input, 3.3 V/50 A output buck converter in telecom server power supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: Achieves >95% efficiency at full load by cutting rectifier loss from ~2.5 W to ~0.8 W versus 40 V Schottky.	Use Scenario: Secondary-side rectification in isolated 48 V–12 V LLC resonant converter for data center PSUs. IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by dedicated gate driver with adaptive dead-time. Use Value: Eliminates forward voltage drop penalty, reducing secondary-side loss by 40% and enabling smaller magnetics.
Load Switch for FPGA/ASIC Core Rails	Hot-Swap and OR-ing Circuitry
Use Scenario: 1.8 V/30 A core power rail for AI accelerator ASIC requiring inrush current limiting and fault protection. IC Role / Device Role / Timing Role: Single N-channel load switch with external gate control for soft-start and overcurrent shutdown. Use Value: R_DS(on) = 10.5 mΩ at 4.5 V ensures <10 mV droop under 30 A, preserving voltage margin for sub-1 V logic.	Use Scenario: Dual 12 V power inputs with automatic OR-ing for redundant power supplies in industrial PLC backplane. IC Role / Device Role / Timing Role: Back-to-back N-channel configuration for bidirectional blocking and low-loss forward conduction. Use Value: Combined R_DS(on) < 22 mΩ minimizes insertion loss (<264 mW at 30 A), improving system efficiency and thermal footprint.

High-Density DC/DC Converters

Synchronous Rectification

Use Scenario: 12 V–48 V input, 3.3 V/50 A output buck converter in telecom server power supply.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >95% efficiency at full load by cutting rectifier loss from ~2.5 W to ~0.8 W versus 40 V Schottky.

Use Scenario: Secondary-side rectification in isolated 48 V–12 V LLC resonant converter for data center PSUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by dedicated gate driver with adaptive dead-time.

Use Value: Eliminates forward voltage drop penalty, reducing secondary-side loss by 40% and enabling smaller magnetics.

Load Switch for FPGA/ASIC Core Rails

Hot-Swap and OR-ing Circuitry

Use Scenario: 1.8 V/30 A core power rail for AI accelerator ASIC requiring inrush current limiting and fault protection.

IC Role / Device Role / Timing Role: Single N-channel load switch with external gate control for soft-start and overcurrent shutdown.

Use Value: R_DS(on) = 10.5 mΩ at 4.5 V ensures <10 mV droop under 30 A, preserving voltage margin for sub-1 V logic.

Use Scenario: Dual 12 V power inputs with automatic OR-ing for redundant power supplies in industrial PLC backplane.

IC Role / Device Role / Timing Role: Back-to-back N-channel configuration for bidirectional blocking and low-loss forward conduction.

Use Value: Combined R_DS(on) < 22 mΩ minimizes insertion loss (<264 mW at 30 A), improving system efficiency and thermal footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiRA18DP-T1-GE3	R_DS(on) = 7.0 mΩ @ 10 V; slightly higher Q_g (7.1 nC); same PowerPAK 1212-8PT package	Identical pinout and thermal profile; marginally higher switching loss in >500 kHz designs	Preferred when second-source qualification requires identical footprint and qualification history
IRL8721PBF	R_DS(on) = 7.5 mΩ @ 4.5 V; TO-220AB package; higher R_thJA (62 °C/W)	Requires heatsink and larger board area; unsuitable for ultra-thin or high-density layouts	Select only if legacy TO-220 layout reuse is mandatory and thermal budget allows

Compared with SiRA18DP-T1-GE3, SISA18BDN-T1-GE3 offers lower gate charge for faster turn-on and reduced driver loss; versus IRL8721PBF, it delivers 4× better thermal resistance and 30% smaller footprint-critical for modern high-power-density systems.

Availability

SISA18BDN-T1-GE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, synchronous rectifiers, and high-current load switches requiring stable component supply across automotive infotainment power modules, industrial motor drives, and AI accelerator power delivery networks.

Supply support for SISA18BDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for demanding industrial and computing applications.

The SISA18BDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency power conversion where low R_DS(on), fast switching, and robust avalanche capability are essential.

FAQ

What is the maximum continuous drain current rating for SISA18BDN-T1-GE3 at 70 °C case temperature?

The SISA18BDN-T1-GE3 supports 48 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8PT package and must be validated against actual board-level thermal performance using the provided R_thJC = 2.7 °C/W value. Designers should confirm junction temperature remains ≤150 °C under worst-case ambient and airflow conditions.

Does SISA18BDN-T1-GE3 require a gate resistor for stable operation in synchronous buck converters?

Yes, SISA18BDN-T1-GE3 benefits from an external gate resistor (typically 1–5 Ω) to dampen ringing and control dV/dt during switching transitions. The datasheet specifies gate resistance R_g = 0.3–3 Ω (typical 1.5 Ω), and test conditions for switching times assume R_g = 1 Ω. Omitting this resistor may cause overshoot, shoot-through risk, or EMI issues-especially at >1 MHz switching frequencies.

Can SISA18BDN-T1-GE3 be used in a back-to-back configuration for OR-ing applications?

Yes, SISA18BDN-T1-GE3 is suitable for back-to-back N-channel MOSFET OR-ing due to its symmetric V_GS rating (±16 V), low R_DS(on), and robust body diode. In such configurations, both devices conduct in the forward direction while blocking reverse current. The 30 V V_DS rating supports 24 V systems with safety margin, and the 100% UIS testing ensures reliability during transient fault events.

What is the body diode forward voltage of SISA18BDN-T1-GE3 at 5 A and 25 °C?

The body diode forward voltage (V_SD) of SISA18BDN-T1-GE3 is specified as 0.8–1.1 V at I_S = 5 A and T_J = 25 °C. This low V_SD reduces conduction loss during dead-time conduction in synchronous rectifiers and improves efficiency in half-bridge freewheeling paths. At elevated temperatures, V_SD decreases slightly due to negative temperature coefficient.

Is SISA18BDN-T1-GE3 compatible with standard reflow soldering profiles for lead-free assembly?

Yes, SISA18BDN-T1-GE3 is qualified for lead-free reflow per J-STD-020, with peak temperature up to 260 °C. The PowerPAK 1212-8PT package is designed for standard Pb-free thermal profiles; however, manual soldering with an iron is not recommended due to thermal mass and leadless construction. Reflow profile compliance is documented in Vishay document 73257.

SISA18BDN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.83mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 36.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8PT

SISA18BDN-T1-GE3 FAQ

1.How can I place an order for SISA18BDN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISA18BDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISA18BDN-T1-GE3 reliable?

The price and inventory of SISA18BDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISA18BDN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISA18BDN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISA18BDN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISA18BDN-T1-GE3?

SISA18BDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISA18BDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISA18BDN-T1-GE3?

For technical support, including SISA18BDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISA18BDN-T1-GE3 requirements.

6.How does Aetrix verify that SISA18BDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISA18BDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISA18BDN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISA18BDN-T1-GE3?

All SISA18BDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISA18BDN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISA18BDN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISA18BDN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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