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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISA18DN-T1-GE3

Name: SISA18DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISA18DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISA18DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SISA18DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 38.3A PPAK1212-8

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Product details

Overview

SISA18DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV Power MOSFET in a PowerPAK® 1212-8 package, delivering 38.3 A continuous drain current at T_C = 25 °C, R_DS(on) = 7.5 mΩ at V_GS = 10 V, and 6.9 nC total gate charge - optimized for high-current DC/DC power supplies and battery protection circuits.

For engineers reviewing the SISA18DN-T1-GE3 datasheet, SISA18DN-T1-GE3 pinout, SISA18DN-T1-GE3 application, or SISA18DN-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V (12 mΩ), 100 % R_g and UIS tested reliability, lead-free/halogen-free compliance, and thermal performance enabled by the exposed-drain PowerPAK 1212-8 footprint.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve low on-resistance with fast switching dynamics. Its gate charge profile (Q_g = 6.9 nC @ 4.5 V) and low Crss/Ciss ratio (0.034–0.068) support efficient operation in synchronous buck converters and POL regulators.

The device features a robust body diode with t_rr = 19–35 ns and Q_rr = 7–14 nC, enabling reliable reverse recovery in high-frequency hard-switched topologies. Thermal design leverages the PowerPAK 1212-8's 5 °C/W typical R_thJC, allowing direct heat transfer from the exposed drain pad to PCB copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V rail and battery protection applications
R_DS(on)	7.5 mΩ max @ V_GS = 10 V - Enables <1 W conduction loss at 35 A in compact layouts
I_D (continuous)	38.3 A @ T_C = 25 °C - Supports high-current power rails without forced air cooling
Q_g	6.9 nC typ. @ V_GS = 4.5 V - Reduces gate drive power and enables 1 MHz+ switching in POLs
R_thJC	5 °C/W typical - Allows >15 W dissipation with minimal junction-to-case temperature rise
Body diode V_SD	0.77–1.1 V @ I_S = 5 A - Low forward drop improves efficiency in bidirectional or freewheeling paths
t_rr	19–35 ns - Minimizes switching loss and EMI during diode commutation

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package with an exposed drain pad on the bottom side. Dimensions: 3.30 mm × 3.30 mm × 1.05 mm (L × W × H). The package uses copper substrate construction for ultra-low thermal resistance and high current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain connection (common node)	All eight terminals are internally connected to the exposed drain pad - provides low-inductance, high-current path and primary thermal conduction path to PCB
Gate	Control terminal	Pin 4 (top-side center) - optimized for low gate loop inductance; requires <2.4 V threshold margin for 4.5 V logic drive
Source	Reference terminal	Pins 1 & 8 (top-side corners) - dual-source configuration reduces source inductance and improves switching stability

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 30 % lower R_DS(on) vs. prior generation at same die size, enabling higher power density
100 % R_g and UIS tested	Guarantees gate robustness and avalanche energy handling (E_AS = 5 mJ) for system-level surge immunity
PowerPAK 1212-8 package	Reduces R_thJA by >5× vs. TSSOP-8, enabling 2× higher current in same board area
Lead (Pb)-free and halogen-free	Complies with JEDEC JS709A and RoHS Directive 2011/65/EU for green electronics manufacturing
Low Q_gd/Q_g ratio	Q_gd = 1.6 nC / Q_g = 6.9 nC → ~23 % - improves Miller immunity and dV/dt ruggedness

Applications

DC/DC Power Supplies	High-Current Computing Rails
Use Scenario: Primary switch in 12 V input, 1.2 V/40 A output synchronous buck converter for CPU VRM. IC Role / Device Role / Timing Role: High-side power switch with fast turn-on (t_d(on) = 11 ns @ 10 V) and low Q_g to minimize dead-time losses. Use Value: 7.5 mΩ R_DS(on) limits conduction loss to <1.2 W at full load, while 6.9 nC Q_g supports 1.5 MHz operation with standard gate drivers.	Use Scenario: Load switch for GPU core voltage rail with hot-swap and overcurrent protection. IC Role / Device Role / Timing Role: Low-loss, high-current pass element controlled via dedicated PMIC enable signal. Use Value: 38.3 A rating and 12 mΩ R_DS(on) @ 4.5 V ensure stable regulation under transient loads up to 30 A with <15 mV droop.
Telecom POL Bricks	Battery Protection Circuits
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V to 5 V telecom brick with 95 % peak efficiency target. IC Role / Device Role / Timing Role: Low-V_GS(th) (1.2–2.4 V) N-channel switch driven by transformer-coupled gate signal. Use Value: Fast t_r/t_f (9/5 ns @ 10 V) and low C_oss (287 pF) reduce switching loss and improve light-load efficiency.	Use Scenario: Charge/discharge FET in lithium-ion battery pack protection IC (e.g., BQ77PL900) with 30 V max cell stack. IC Role / Device Role / Timing Role: Bidirectional current path with integrated body diode supporting reverse current during charging. Use Value: 18 A continuous source-drain diode current and 19 ns t_rr prevent thermal runaway during short-circuit events.

DC/DC Power Supplies

High-Current Computing Rails

Use Scenario: Primary switch in 12 V input, 1.2 V/40 A output synchronous buck converter for CPU VRM.

IC Role / Device Role / Timing Role: High-side power switch with fast turn-on (t_d(on) = 11 ns @ 10 V) and low Q_g to minimize dead-time losses.

Use Value: 7.5 mΩ R_DS(on) limits conduction loss to <1.2 W at full load, while 6.9 nC Q_g supports 1.5 MHz operation with standard gate drivers.

Use Scenario: Load switch for GPU core voltage rail with hot-swap and overcurrent protection.

IC Role / Device Role / Timing Role: Low-loss, high-current pass element controlled via dedicated PMIC enable signal.

Use Value: 38.3 A rating and 12 mΩ R_DS(on) @ 4.5 V ensure stable regulation under transient loads up to 30 A with <15 mV droop.

Telecom POL Bricks

Battery Protection Circuits

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V to 5 V telecom brick with 95 % peak efficiency target.

IC Role / Device Role / Timing Role: Low-V_GS(th) (1.2–2.4 V) N-channel switch driven by transformer-coupled gate signal.

Use Value: Fast t_r/t_f (9/5 ns @ 10 V) and low C_oss (287 pF) reduce switching loss and improve light-load efficiency.

Use Scenario: Charge/discharge FET in lithium-ion battery pack protection IC (e.g., BQ77PL900) with 30 V max cell stack.

IC Role / Device Role / Timing Role: Bidirectional current path with integrated body diode supporting reverse current during charging.

Use Value: 18 A continuous source-drain diode current and 19 ns t_rr prevent thermal runaway during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiSA16DN-T1-GE3	R_DS(on) = 6.0 mΩ @ 10 V (lower), Q_g = 7.5 nC (higher), same package	Better conduction loss but slightly slower switching; suited for <1 MHz apps prioritizing efficiency over speed	Select when lowest possible R_DS(on) is critical and gate drive capability allows higher Q_g.
SiSA20DN-T1-GE3	R_DS(on) = 8.5 mΩ @ 10 V (higher), Q_g = 6.2 nC (lower), same package	Optimized for ultra-fast switching with reduced Miller charge; trade-off is +13 % conduction loss	Select for >2 MHz POLs where switching loss dominates and layout minimizes gate loop inductance.

Compared with SISA18DN-T1-GE3, SiSA16DN-T1-GE3 delivers lower conduction loss at the cost of increased gate drive demand, while SiSA20DN-T1-GE3 sacrifices on-resistance for faster edge rates and lower Q_gd - enabling higher-frequency operation where gate drive strength is constrained.

Availability

SISA18DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC power supplies, high-current computing rails, and battery protection circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for SISA18DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISA18DN-T1-GE3 belongs to Vishay's PowerPAK® 1212-8 TrenchFET® Gen IV family, engineered specifically for space-constrained, high-current power conversion in computing, telecom, and portable electronics.

FAQ

What is the maximum continuous drain current rating for SISA18DN-T1-GE3 at 70 °C case temperature?

The SISA18DN-T1-GE3 supports 30.6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient conditions. The SISA18DN-T1-GE3 datasheet confirms this value under steady-state conditions with proper heatsinking.

Does SISA18DN-T1-GE3 have a guaranteed avalanche rating, and what is its single-pulse energy limit?

Yes, the SISA18DN-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested per datasheet, with a specified single-pulse avalanche energy (E_AS) of 5 mJ at I_AS = 10 A and L = 0.1 mH. This rating ensures robustness against inductive kickback in motor drives and relay snubbers. The SISA18DN-T1-GE3 specification sheet explicitly lists E_AS = 5 mJ under Absolute Maximum Ratings.

What is the gate threshold voltage range for SISA18DN-T1-GE3, and how does it behave across temperature?

The SISA18DN-T1-GE3 has a gate threshold voltage (V_GS(th)) range of 1.2 V to 2.4 V at T_J = 25 °C, with a negative temperature coefficient of −5.2 mV/°C. This means V_GS(th) decreases as junction temperature rises, improving turn-on margin at elevated temperatures. The SISA18DN-T1-GE3 datasheet specifies this behavior in the Static Characteristics section.

Can SISA18DN-T1-GE3 be used with 3.3 V logic-level gate drive, and what is its R_DS(on) at that voltage?

The SISA18DN-T1-GE3 is not characterized for 3.3 V gate drive; its R_DS(on) is only specified at V_GS = 4.5 V (12 mΩ max) and 10 V (7.5 mΩ max). At 3.3 V, conduction loss increases significantly due to incomplete enhancement - the SISA18DN-T1-GE3 transfer characteristics show suboptimal ID at V_GS < 4.5 V, making it unsuitable for true 3.3 V logic control without level-shifting.

What is the recommended reflow profile for soldering SISA18DN-T1-GE3, and is lead-free compatible?

The SISA18DN-T1-GE3 is qualified for lead-free reflow with a peak temperature of 240 °C (±0/−5 °C) for 20–40 seconds, per Vishay document 73257. The profile includes ramp-up ≤6 °C/s, preheat at 155 ±15 °C for ≤120 s, and time above 180 °C of 70–180 s. The SISA18DN-T1-GE3 ordering code "-GE3" explicitly denotes lead-free and halogen-free compliance.

SISA18DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 38.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21.5 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 19.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SISA18DN-T1-GE3 FAQ

1.How can I place an order for SISA18DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISA18DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISA18DN-T1-GE3 reliable?

The price and inventory of SISA18DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISA18DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISA18DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISA18DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISA18DN-T1-GE3?

SISA18DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISA18DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISA18DN-T1-GE3?

For technical support, including SISA18DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISA18DN-T1-GE3 requirements.

6.How does Aetrix verify that SISA18DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISA18DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISA18DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISA18DN-T1-GE3?

All SISA18DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISA18DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISA18DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISA18DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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