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Vishay Siliconix SISA26DN-T1-GE3
- Part No.:
- SISA26DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SISA26DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 60A PPAK1212-8S
- Quantity:
- Payment:
- Shipping:
Inventory:5,532
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Product details
Overview
SISA26DN-T1-GE3 from Vishay Siliconix is an N-channel 25 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 2.65 mΩ at VGS = 10 V and 3.90 mΩ at VGS = 4.5 V, with 13.2 nC typical total gate charge, optimized for high-efficiency synchronous rectification and DC/DC converter applications.
For engineers reviewing the SISA26DN-T1-GE3 datasheet, SISA26DN-T1-GE3 pinout, SISA26DN-T1-GE3 application, or SISA26DN-T1-GE3 equivalent, this device supports high-current load switching up to 60 A at TC = 25 °C, features 100 % Rg and UIS testing, and targets space-constrained power stages requiring low conduction and switching losses.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low RDS(on) and optimized Qgd/Qgs ratio, directly reducing switching-related power loss in hard-switched and synchronous rectifier topologies. Its 25 V VDS rating and ±12 V/16 V gate voltage range support robust operation in 3.3 V–12 V control environments.
The PowerPAK 1212-8 package provides low thermal resistance (RthJF = 2.5 °C/W max) and high current capability via exposed drain pads on both top and bottom sides. The device includes a body diode with trr = 29 ns (typ) and Qrr = 16 nC (typ), enabling fast recovery in buck and LLC secondary-side applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage for 3.3 V–12 V input rail applications. |
| RDS(on) @ 10 V | 2.65 mΩ max - Enables ≤150 mW conduction loss at 60 A, critical for high-current synchronous rectifiers. |
| RDS(on) @ 4.5 V | 3.90 mΩ max - Ensures stable on-state performance with logic-level gate drive from microcontrollers or PWM controllers. |
| Qg typ. | 13.2 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in compact DC/DC converters. |
| ID (TC = 25 °C) | 60 A - Continuous drain current rating supports high-power density point-of-load designs without external heatsinking. |
| VGS(th) | 1.0–2.5 V - Tight threshold range ensures predictable turn-on behavior across temperature and process variation. |
| RthJF | 2.5 °C/W max - Junction-to-case thermal resistance allows efficient heat transfer to PCB copper or thermal pad. |
Pinout & Package
Package: PowerPAK® 1212-8 Single - 3.3 mm × 3.3 mm leadless surface-mount package with exposed drain terminals on top and bottom for enhanced thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four exposed drain pads provide dual-side thermal path and low-inductance connection to ground plane or heatsink. |
| 4 | Gate (G) | Single gate terminal located adjacent to source pins for minimized gate loop inductance and stable high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on) × Qg figure of merit for reduced switching + conduction loss trade-off. |
| Optimized Qgd/Qgs ratio | Minimizes Miller-induced switching delay and dv/dt-induced false turn-on in high-speed synchronous rectifiers. |
| 100 % Rg tested | Ensures gate resistance consistency (0.2–1.5 Ω), critical for accurate gate drive loss calculation and EMI control. |
| 100 % UIS tested | Validates ruggedness under unclamped inductive switching stress, supporting reliable operation in buck and flyback secondaries. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements for industrial and computing applications. |
Applications
| Synchronous Buck Converter | High-Density DC/DC Module |
|---|---|
|
Use Scenario: Secondary-side switch in 12 V input, 1.0 V/60 A output multiphase buck converter for server CPU VRM. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop and associated heat. Use Value: Achieves >95 % efficiency at full load by reducing conduction loss from ~1.2 W (diode) to ~0.15 W (MOSFET). |
Use Scenario: Primary-side high-side switch in isolated 48 V–12 V DC/DC module for telecom power shelf. IC Role / Device Role: High-current, low-RDS(on) switching element in active clamp forward or half-bridge topology. Use Value: Enables 800 W/in³ power density by minimizing die size and thermal derating due to RthJF = 2.5 °C/W. |
| Synchronous Rectification | Load Switching |
|
Use Scenario: Secondary-side switch in 24 V–5 V LLC resonant converter for industrial PoE++ PSE. IC Role / Device Role: Fast-recovery body diode and low-loss channel used in synchronous rectification mode during ZVS transitions. Use Value: Reduces reverse recovery loss by 60 % vs. discrete Si diode, lowering junction temperature rise by 18 °C at 200 kHz. |
Use Scenario: Hot-swap and inrush current control in 24 V industrial PLC backplane power distribution. IC Role / Device Role: Single N-channel load switch with integrated gate driver interface and overcurrent protection support. Use Value: Supports 60 A continuous current with <100 μs turn-on time and <500 ns turn-off time for fast fault isolation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiRA26DP-T1-GE3 | Same RDS(on) specs and package, but rated for 30 V VDS; higher gate charge (15.8 nC typ) and slightly higher Qgd. | Better suited for 24 V bus systems where margin above 25 V is required; less optimal for 12 V input where lower VDS improves FOM. | Select when system VIN may exceed 25 V transiently or long-term reliability at elevated voltage is prioritized. |
| IRLHS6242PBF | 20 V VDS, 2.8 mΩ @ 4.5 V, 12.5 nC Qg, PowerPAK SO-8 package - larger footprint (4.9 × 6.0 mm) and higher RthJA (40 °C/W). | Compatible for lower-current (<40 A) or less thermally constrained designs; not suitable for same PCB area or thermal budget. | Choose only if legacy SO-8 layout reuse is mandatory and peak current remains below 40 A with adequate board copper. |
Compared with SiRA26DP-T1-GE3 and IRLHS6242PBF, the SISA26DN-T1-GE3 offers the best combination of 25 V rating, ultra-low RDS(on), minimal gate charge, and smallest thermal footprint - making it the preferred choice for next-generation 12 V–24 V high-current synchronous rectifiers and compact DC/DC modules.
Availability
SISA26DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, high-density DC/DC modules, and industrial load switching applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for SISA26DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SISA26DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-efficiency, high-current power conversion in space-constrained computing, telecom, and industrial systems.
FAQ
What is the maximum continuous drain current rating for SISA26DN-T1-GE3 at case temperature of 70 °C?
The SISA26DN-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects its robust thermal design using the PowerPAK 1212-8 package with low RthJF, enabling sustained high-current operation without derating in well-heatsinked layouts.
Does SISA26DN-T1-GE3 have a specified body diode reverse recovery time (trr)?
Yes, the SISA26DN-T1-GE3 specifies trr = 29 ns (typical) at IF = 10 A, dI/dt = 100 A/μs, and TJ = 25 °C. This fast recovery characteristic is integral to its suitability in synchronous rectification and high-frequency DC/DC converters where body diode conduction occurs during dead-time intervals.
Is SISA26DN-T1-GE3 suitable for logic-level gate drive applications?
Yes, the SISA26DN-T1-GE3 is fully compatible with logic-level gate drive: its RDS(on) is guaranteed at VGS = 4.5 V (3.90 mΩ max), and VGS(th) ranges from 1.0 V to 2.5 V. This ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V microcontroller outputs or PWM controller drivers.
What is the thermal resistance from junction to ambient (RthJA) for SISA26DN-T1-GE3 under standard mounting conditions?
The SISA26DN-T1-GE3 has a maximum RthJA of 34 °C/W when mounted on a 1" × 1" FR4 board (per datasheet note b). For high-power applications, the device achieves significantly better thermal performance via its low RthJF (2.5 °C/W max), allowing direct heat transfer to PCB copper or external heatsinks.
Are there any special PCB layout recommendations for SISA26DN-T1-GE3 to ensure optimal thermal and electrical performance?
Yes - Vishay recommends using the recommended minimum pads per Application Note 826 (Document 72597), including 0.094" × 0.152" (2.39 × 3.86 mm) thermal pad for the drain and symmetric 0.039" wide source/gate traces. A solid inner-layer thermal plane connected to all four drain terminals via multiple vias is essential to realize the rated RthJF and prevent hot-spot formation in the SISA26DN-T1-GE3.
SISA26DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2247 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 39W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SISA26DN-T1-GE3 FAQ
1.How can I place an order for SISA26DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISA26DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISA26DN-T1-GE3 reliable?
The price and inventory of SISA26DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISA26DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISA26DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISA26DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISA26DN-T1-GE3?
SISA26DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISA26DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISA26DN-T1-GE3?
For technical support, including SISA26DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISA26DN-T1-GE3 requirements.
6.How does Aetrix verify that SISA26DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISA26DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISA26DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISA26DN-T1-GE3?
All SISA26DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISA26DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISA26DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISA26DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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