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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISA66DN-T1-GE3

Name: SISA66DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISA66DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISA66DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SISA66DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 40A PPAK1212-8

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Product details

Overview

SISA66DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 2.3 mΩ at V_GS = 10 V and 3.1 mΩ at V_GS = 4.5 V, with 40 A continuous drain current (T_J = 150 °C) and 19.2 nC total gate charge - optimized for high-efficiency synchronous buck converters and VRM/point-of-load applications.

For engineers reviewing the SISA66DN-T1-GE3 datasheet, SISA66DN-T1-GE3 pinout, SISA66DN-T1-GE3 application, or SISA66DN-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V for 5 V gate drive, ultra-low thermal resistance (R_thJC = 1.9 °C/W), 100 % R_g and UIS tested reliability, and compatibility with lead-free reflow per JEDEC J-STD-020.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve sub-3 mΩ on-resistance while maintaining robust avalanche capability (E_AS = 20 mJ) and fast switching (t_d(off) = 23–46 ns at V_GEN = 10 V). Its gate charge profile (Q_g = 19.2 nC typ. at 4.5 V) supports high-frequency operation up to 1 MHz in DC/DC converters.

The PowerPAK 1212-8 package features an exposed copper drain pad on the bottom side for direct thermal conduction to the PCB, enabling junction-to-case thermal resistance as low as 1.9 °C/W - critical for high-power-density server and computing applications where board-level heat spreading is constrained.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with margin for transient spikes in server VRMs
R_DS(on) max @ V_GS = 10 V	2.3 mΩ - enables <1 W conduction loss at 20 A, reducing thermal load in compact POL modules
R_DS(on) max @ V_GS = 4.5 V	3.1 mΩ - ensures stable performance with standard 5 V gate drivers without level-shifting
Q_g typ.	19.2 nC - minimizes gate drive power and switching losses in high-frequency (>500 kHz) buck stages
I_D continuous	40 A @ T_C = 25 °C - rated for high-current output stages in multi-phase CPU/GPU VRMs
R_thJC max	2.4 °C/W - allows >40 W power dissipation with modest PCB copper area, simplifying thermal design
Body diode V_SD	0.72 V typ. @ I_S = 5 A - reduces reverse recovery losses during synchronous rectification

Pinout & Package

PowerPAK® 1212-8 is a surface-mount, leadless, 8-terminal package with exposed drain pad on the bottom. Dimensions: 3.3 mm × 3.3 mm × 1.05 mm (L × W × H); footprint compatible with TSOP-6 but with superior thermal and current-handling capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four drain terminals connected to bottom-exposed copper pad - primary thermal and current path to PCB
4	Gate (G)	Single gate terminal located adjacent to source pins - enables short, low-inductance gate loop layout

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables 2.3 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint - 2× die area vs. TSOP-6, enabling higher current density
100 % R_g and UIS tested	Guarantees gate robustness against ESD and ruggedness against unclamped inductive switching stress in real-world POL circuits
Exposed drain pad	Provides direct thermal path to PCB - achieves R_thJC = 1.9 °C/W, outperforming SO-8 by >10× and TSSOP-8 by >20×
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for automotive-qualified and green manufacturing programs
JEDEC J-STD-020-compliant reflow	Rated for peak reflow temperature of 240 °C - compatible with standard lead-free assembly lines without derating

Applications

Server VRM Output Stage	High-Density POL Converter
Use Scenario: Primary high-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 100 A per phase. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) N-channel MOSFET operating at 300–1000 kHz with synchronous rectification. Use Value: 3.1 mΩ R_DS(on) at 4.5 V gate drive eliminates need for gate driver level shifters and cuts conduction loss by 35% vs. comparable TSSOP-8 devices.	Use Scenario: Compact 12 V-to-3.3 V DC/DC module for FPGA I/O banks in telecom baseband cards. IC Role / Device Role / Timing Role: Main switch in single-phase buck regulator with tight layout constraints and minimal PCB area. Use Value: PowerPAK 1212-8's 3.3 mm × 3.3 mm footprint saves >40% board space vs. SO-8 while delivering same current rating and lower thermal resistance.
GPU Power Delivery	Synchronous Rectifier in Buck Converter
Use Scenario: High-current phase-leg switch in GPU VRM delivering up to 400 A peak with dynamic load steps >100 A/μs. IC Role / Device Role / Timing Role: Low-inductance, paralleled-source N-channel MOSFET handling rapid di/dt transients with minimal ringing. Use Value: Four dedicated source terminals reduce source inductance by ~50% vs. standard SO-8, improving stability and reducing EMI in high-dV/dt environments.	Use Scenario: Low-side synchronous rectifier in notebook adapter buck stage operating at 500 kHz. IC Role / Device Role / Timing Role: Fast-recovery body diode-assisted switch replacing Schottky diode to minimize forward drop and reverse recovery loss. Use Value: Body diode V_SD = 0.72 V typ. and t_rr = 38 ns enable >95% efficiency at light loads without external diode snubbing.

Server VRM Output Stage

High-Density POL Converter

Use Scenario: Primary high-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 100 A per phase.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) N-channel MOSFET operating at 300–1000 kHz with synchronous rectification.

Use Value: 3.1 mΩ R_DS(on) at 4.5 V gate drive eliminates need for gate driver level shifters and cuts conduction loss by 35% vs. comparable TSSOP-8 devices.

Use Scenario: Compact 12 V-to-3.3 V DC/DC module for FPGA I/O banks in telecom baseband cards.

IC Role / Device Role / Timing Role: Main switch in single-phase buck regulator with tight layout constraints and minimal PCB area.

Use Value: PowerPAK 1212-8's 3.3 mm × 3.3 mm footprint saves >40% board space vs. SO-8 while delivering same current rating and lower thermal resistance.

GPU Power Delivery

Synchronous Rectifier in Buck Converter

Use Scenario: High-current phase-leg switch in GPU VRM delivering up to 400 A peak with dynamic load steps >100 A/μs.

IC Role / Device Role / Timing Role: Low-inductance, paralleled-source N-channel MOSFET handling rapid di/dt transients with minimal ringing.

Use Value: Four dedicated source terminals reduce source inductance by ~50% vs. standard SO-8, improving stability and reducing EMI in high-dV/dt environments.

Use Scenario: Low-side synchronous rectifier in notebook adapter buck stage operating at 500 kHz.

IC Role / Device Role / Timing Role: Fast-recovery body diode-assisted switch replacing Schottky diode to minimize forward drop and reverse recovery loss.

Use Value: Body diode V_SD = 0.72 V typ. and t_rr = 38 ns enable >95% efficiency at light loads without external diode snubbing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiRA20DP-T1-GE3	R_DS(on) = 2.7 mΩ @ 10 V; Q_g = 22.5 nC; same PowerPAK 1212-8 package	Higher R_DS(on) and gate charge - suited for cost-sensitive, lower-efficiency POL designs	Select when marginally higher conduction loss is acceptable to reduce gate drive complexity
IRLHS6342TRPBF	R_DS(on) = 2.8 mΩ @ 4.5 V; Q_g = 20.5 nC; PowerSO-10 package (larger footprint, higher R_thJA)	Slower thermal response due to higher junction-to-ambient resistance (R_thJA = 40 °C/W vs. 24 °C/W)	Choose only if existing layout uses PowerSO-10 and thermal headroom exceeds 15 °C

Compared with SISA66DN-T1-GE3, SiRA20DP-T1-GE3 trades 0.4 mΩ higher R_DS(on) for broader availability, while IRLHS6342TRPBF sacrifices thermal performance and board area efficiency for legacy package compatibility - neither offers pin-to-pin replacement.

Availability

SISA66DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, high-density POL converters, and GPU power delivery systems requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SISA66DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISA66DN-T1-GE3 belongs to Vishay's TrenchFET Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in datacenter and computing infrastructure where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for SISA66DN-T1-GE3 at 70 °C case temperature?

The SISA66DN-T1-GE3 supports 40 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is limited by package thermal capacity, not silicon, and remains constant from 25 °C to 70 °C case temperature - confirming robust thermal design margin for forced-air-cooled VRM heatsinks.

Does SISA66DN-T1-GE3 require a gate resistor for reliable operation in a 500 kHz buck converter?

SISA66DN-T1-GE3 does not mandate an external gate resistor for basic operation, but a 1 Ω to 5 Ω resistor is recommended to dampen ringing caused by parasitic inductance in high-di/dt layouts. The device's typical gate resistance (R_g = 0.3–2.5 Ω) and low Q_gd/Q_gs ratio (0.36) inherently support clean turn-on/turn-off transitions at 500 kHz when layout inductance is minimized.

Can SISA66DN-T1-GE3 be used as a synchronous rectifier with zero-volt gate drive?

No - SISA66DN-T1-GE3 is an enhancement-mode N-channel MOSFET requiring positive V_GS ≥ 1 V to conduct. It cannot operate as a zero-threshold synchronous rectifier; gate drive must be actively controlled (e.g., by a dedicated sync rectifier controller or gate driver referenced to source) to ensure proper timing and prevent shoot-through in buck topologies.

What is the body diode reverse recovery charge (Q_rr) of SISA66DN-T1-GE3, and how does it impact efficiency?

The SISA66DN-T1-GE3 has Q_rr = 32–64 nC (typ./max) at I_F = 10 A, dI/dt = 100 A/μs, and T_J = 25 °C. This low Q_rr minimizes reverse recovery loss during dead-time commutation, directly improving light-load efficiency by up to 1.2% in 500 kHz buck converters compared to older-generation MOSFETs with Q_rr > 100 nC.

Is SISA66DN-T1-GE3 qualified for automotive applications per AEC-Q101?

No - SISA66DN-T1-GE3 is not AEC-Q101 qualified. It is designed and tested for industrial and computing applications per JEDEC standards. For automotive use, Vishay offers AEC-Q101-qualified alternatives such as SQJA26EP-T1_GE3, which shares similar R_DS(on) and package but includes extended temperature screening and failure analysis per automotive requirements.

SISA66DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3014 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SISA66DN-T1-GE3 FAQ

1.How can I place an order for SISA66DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISA66DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISA66DN-T1-GE3 reliable?

The price and inventory of SISA66DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISA66DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISA66DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISA66DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISA66DN-T1-GE3?

SISA66DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISA66DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISA66DN-T1-GE3?

For technical support, including SISA66DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISA66DN-T1-GE3 requirements.

6.How does Aetrix verify that SISA66DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISA66DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISA66DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISA66DN-T1-GE3?

All SISA66DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISA66DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISA66DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISA66DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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