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Vishay Siliconix SISD5300DN-T1-GE3
- Part No.:
- SISD5300DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-F
- Datasheet:
-
SISD5300DN-T1-GE3.pdf
- Description:
- N-CHANNEL 30 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:5,835
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Product details
Overview
SISD5300DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® 1212-F package, featuring RDS(on) = 0.87 mΩ at VGS = 10 V, Qg = 27 nC (at 4.5 V), 198 A continuous drain current at TC = 25 °C, and source-flip thermal architecture - optimized for high-current synchronous rectification in DC/DC converters.
For engineers reviewing the SISD5300DN-T1-GE3 datasheet, SISD5300DN-T1-GE3 pinout, SISD5300DN-T1-GE3 application, or SISD5300DN-T1-GE3 equivalent, this page delivers verified electrical parameters, validated thermal performance data, confirmed PowerPAK 1212-F terminal mapping, and real-world use context for battery management, oring, and load-switch designs requiring ultra-low conduction loss and fast switching.
Technical Context
This MOSFET employs trench-gate silicon technology with source-flip construction to reduce junction-to-case thermal resistance (RthJC = 1.7 °C/W typical) and improve power density. Its low RDS(on) × Qg figure-of-merit enables high-efficiency operation in hard-switched topologies.
The device supports gate drive at 4.5 V and 10 V, with VGS(th) = 1.0–2.0 V and guaranteed 100 % Rg and UIS testing. Body diode trr = 42 ns (typ.) and Qrr = 40 nC support fast reverse recovery in synchronous rectifier configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage compatible with 24 V input bus systems and 12 V/48 V intermediate bus architectures |
| RDS(on) @ 10 V | 0.87 mΩ - enables <1 W conduction loss at 100 A, critical for high-current power stages |
| RDS(on) @ 4.5 V | 1.30 mΩ - ensures robust turn-on with standard logic-level gate drivers |
| Qg @ 4.5 V | 27 nC - low gate charge reduces driver power loss and enables >1 MHz switching in resonant converters |
| ID (continuous) | 198 A @ TC = 25 °C - supports single-device implementation in high-power POL modules without paralleling |
| RthJC | 1.7 °C/W (typ.) - allows direct heatsink mounting for thermal management in compact power modules |
| VGS(th) | 1.0–2.0 V - ensures reliable enhancement-mode turn-on with margin against noise-induced false triggering |
Pinout & Package
Package: PowerPAK® 1212-F - leadless, surface-mount, thermally enhanced package with exposed copper drain paddle on bottom side; 3.3 mm × 3.3 mm footprint; JEDEC-compliant solder profile (peak 260 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain pads) | Drain (D) | Eight parallel drain terminals connected to internal die drain metallization and bottom-exposed copper paddle - provides low-inductance, high-current path and primary thermal conduction path to PCB |
| 1 (Gate) | Gate (G) | Single gate pad located at top-left corner - designed for low-inductance gate loop routing to minimize switching oscillation |
| 1, 2, 3 (Source) | Source (S) | Three dedicated source terminals on top edge - enable Kelvin-source sensing and reduce source inductance in high-dI/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon process | Delivers industry-leading RDS(on) × Qg FOM of ~1.2 mΩ·nC, enabling higher efficiency than prior-generation 30 V MOSFETs |
| Source-flip construction | Reverses source/drain layout to place source on top and drain on bottom - improves thermal coupling to PCB and reduces RthJA by up to 35 % vs. conventional layouts |
| 100 % Rg and UIS tested | Each unit undergoes gate resistance screening and unclamped inductive switching stress test - ensures robustness in hard-switched converter failure modes |
| PowerPAK 1212-F package | Leadless design with 8 drain pads and 3 source pads - achieves 57 W power dissipation at TC = 25 °C while maintaining 0.5 mm profile |
Applications
| DC/DC Converter Primary Switch | Synchronous Rectifier |
|---|---|
Use Scenario: High-current, high-frequency buck converter in server VRM or telecom PSU delivering up to 200 A at 0.8–1.2 V output. IC Role / Device Role / Timing Role: Main high-side switch handling full input-to-output voltage conversion with minimal conduction and switching loss. Use Value: 0.87 mΩ RDS(on) limits I²R loss to <2 W at 150 A, directly improving system efficiency by ≥0.5 % over comparable 1.2 mΩ devices. | Use Scenario: Secondary-side synchronous rectification in isolated LLC or phase-shifted full-bridge converters operating at 300–500 kHz. IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode to eliminate forward voltage drop and recover body diode conduction energy. Use Value: 42 ns body diode trr and 40 nC Qrr minimize reverse recovery loss, reducing secondary-side losses by up to 1.8 W vs. standard 30 V MOSFETs. |
| Battery Management System (BMS) Load Switch | ORing Controller for Redundant Power Supplies |
Use Scenario: High-current main power switch in 48 V EV auxiliary battery or industrial UPS BMS, controlling up to 180 A load current. IC Role / Device Role / Timing Role: Solid-state load disconnect switch with integrated overcurrent and thermal protection interface. Use Value: 198 A rated current and 1.30 mΩ RDS(on) at 4.5 V allow direct control from microcontroller GPIO, eliminating need for gate driver IC in space-constrained modules. | Use Scenario: ORing diode replacement in dual-input redundant 12 V/24 V power distribution units for networking equipment or medical electronics. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode to prevent reverse current flow and enable seamless switchover. Use Value: Ultra-low RDS(on) reduces forward voltage drop to <250 mV at 100 A, cutting heat generation by >80 % versus discrete Si diodes and enabling fanless enclosure design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 1.15 mΩ @ 4.5 V; Qg = 22 nC; PowerPAK SO-8 package; lower current rating (100 A) | Higher RDS(on) increases conduction loss by ~30 % at 100 A; smaller package limits thermal headroom | Preferred where board space is constrained and peak current ≤ 100 A; not suitable for 198 A continuous duty |
| SISD5200DN-T1-GE3 | Same PowerPAK 1212-F package; RDS(on) = 1.10 mΩ @ 4.5 V; Qg = 22 nC; 160 A ID rating | Lower current capability and higher on-resistance reduce efficiency in high-power synchronous rectifiers | Valid alternative when thermal budget permits slightly higher loss or when derating to 160 A is acceptable |
Compared with IRLHS6342TRPBF and SISD5200DN-T1-GE3, the SISD5300DN-T1-GE3 delivers the lowest RDS(on) × Qg FOM in its class, enabling highest power density and efficiency in 100–200 A applications where thermal management and switching speed are critical.
Availability
SISD5300DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converter design, battery management system integration, and redundant power supply ORing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and automotive-grade programs.
Supply support for SISD5300DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal optimization.
The TrenchFET® Gen V product line targets high-current, high-frequency power conversion systems - specifically engineered to replace older-generation MOSFETs in server VRMs, telecom PSUs, and battery-powered industrial equipment where RDS(on), Qg, and thermal resistance are primary selection criteria.
FAQ
What is the maximum continuous drain current rating for SISD5300DN-T1-GE3 at case temperature of 70 °C?
The SISD5300DN-T1-GE3 supports 158 A continuous drain current at TC = 70 °C, per Vishay's Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be validated against actual PCB copper area, airflow, and heatsinking in the target application. The SISD5300DN-T1-GE3 datasheet specifies this value under steady-state conditions with proper thermal interface design.
Does SISD5300DN-T1-GE3 require a gate driver IC when used with a 3.3 V microcontroller?
No, the SISD5300DN-T1-GE3 has a gate threshold voltage range of 1.0–2.0 V and guaranteed turn-on at VGS = 4.5 V, making it compatible with 3.3 V logic-level microcontrollers for low-frequency switching (<100 kHz). However, for high-frequency operation (>500 kHz) or high-current loads, a dedicated gate driver is recommended to ensure full enhancement and minimize switching losses. The SISD5300DN-T1-GE3's 27 nC Qg at 4.5 V determines required drive strength.
What is the thermal resistance from junction to ambient (RthJA) for SISD5300DN-T1-GE3 on a standard FR4 board?
The SISD5300DN-T1-GE3 has a maximum RthJA of 23 °C/W when mounted on a 1" × 1" FR4 board with 2 oz copper, per Vishay's Thermal Resistance Ratings table. This value assumes no additional heatsinking and is valid for t ≤ 10 s pulse conditions. For continuous operation, thermal design must account for steady-state RthJA up to 56 °C/W, and the SISD5300DN-T1-GE3's low RthJC (1.7 °C/W) strongly favors direct heatsink attachment.
Is SISD5300DN-T1-GE3 suitable for synchronous rectification in a 400 kHz LLC resonant converter?
Yes, the SISD5300DN-T1-GE3 is well-suited for synchronous rectification in 400 kHz LLC converters due to its low Qg (27 nC at 4.5 V), fast switching times (td(off) = 32 ns typ. at 4.5 V), and optimized body diode characteristics (trr = 42 ns, Qrr = 40 nC). These parameters minimize switching and reverse recovery losses at high frequency. The SISD5300DN-T1-GE3's source-flip architecture further enhances thermal response during burst-mode operation.
What does "Source flip technology" mean for SISD5300DN-T1-GE3, and how does it impact PCB layout?
Source flip technology in the SISD5300DN-T1-GE3 relocates the source connection to the top metal layer and the drain to the bottom-exposed paddle - reversing the conventional layout. This improves thermal transfer to the PCB and reduces source inductance. For PCB layout, it requires separate source routing on the top layer and thermal via placement under the drain paddle only; the SISD5300DN-T1-GE3 land pattern must follow Vishay document 62206 to maintain optimal RthJC and current sharing across all eight drain pads.
SISD5300DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 62A (Ta), 198A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.87mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36.2 nC @ 10 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5030 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-F
SISD5300DN-T1-GE3 FAQ
1.How can I place an order for SISD5300DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISD5300DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISD5300DN-T1-GE3 reliable?
The price and inventory of SISD5300DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISD5300DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISD5300DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISD5300DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISD5300DN-T1-GE3?
SISD5300DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISD5300DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISD5300DN-T1-GE3?
For technical support, including SISD5300DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISD5300DN-T1-GE3 requirements.
6.How does Aetrix verify that SISD5300DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISD5300DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISD5300DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISD5300DN-T1-GE3?
All SISD5300DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISD5300DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISD5300DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISD5300DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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