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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH106DN-T1-GE3

Name: SISH106DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH106DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISH106DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH106DN-T1-GE3.pdf

Description:: MOSFET N-CH 20V 12.5A PPAK

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Product details

Overview

SISH106DN-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® power MOSFET optimized for fast switching and PWM operation, with R_DS(on) = 0.0062 Ω at V_GS = 4.5 V, 19.5 A continuous drain current, and PowerPAK® 1212-8SH leadless package - used in synchronous rectification and load switch circuits.

For engineers reviewing the SISH106DN-T1-GE3 datasheet, SISH106DN-T1-GE3 pinout, SISH106DN-T1-GE3 application, or SISH106DN-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 2.5 V/4.5 V gate drive, 17.5 nC total gate charge, thermal resistance R_thJA = 65 °C/W (steady state), and compatibility with high-frequency DC-DC converter topologies.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (0.6–1.5 V) enables logic-level drive compatibility, while the 100 % R_g tested specification ensures consistent gate resistance (0.7–2.1 Ω) across production lots.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 3.2 A and t_rr = 30–60 ns, supporting efficient reverse recovery in synchronous buck converters. Its PowerPAK 1212-8SH package provides enhanced thermal performance via exposed drain copper on the bottom side.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum drain-source blocking voltage for 12 V input rail applications
R_DS(on) @ 4.5 V	0.0062 Ω - enables <100 mW conduction loss at 19.5 A in compact DC-DC stages
R_DS(on) @ 2.5 V	0.0098 Ω - supports direct interface with 2.5 V/3.3 V microcontroller GPIOs
Q_g	17.5 nC typ. - balances switching speed and gate driver power requirements
I_D (continuous)	19.5 A @ T_A = 25 °C - suitable for high-current point-of-load regulators
R_thJA	65 °C/W (steady state) - requires minimal PCB copper area for thermal management
V_GS(th)	0.6–1.5 V - ensures reliable turn-on with low-voltage control signals

Pinout & Package

PowerPAK® 1212-8SH is a 3.3 mm × 3.3 mm × 0.9 mm leadless surface-mount package with exposed drain terminals on the bottom side for thermal and electrical performance. Pin numbering follows standard bottom-view orientation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection for internal parallel die; low-inductance return path
5, 6, 7, 8	Drain	Exposed copper drain pads on bottom side; primary thermal and power path
G (top-side pad)	Gate	Single top-side gate terminal; isolated from drain/source by oxide layer

Key Features

Feature	Design Value
TrenchFET® technology	Enables sub-10 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint without wafer thinning
PWM-optimized switching	Low Q_gd/Q_gs ratio (2.8/6.6 nC) minimizes Miller-induced shoot-through risk
100 % R_g tested	Guarantees gate resistance between 0.7–2.1 Ω - critical for predictable turn-on timing
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material definitions
Exposed drain thermal pad	Reduces R_thJC to 1.9 °C/W - enables >15 W power dissipation with minimal heatsinking

Applications

Server VRM Synchronous Rectifier	USB-C PD Load Switch
Use Scenario: High-efficiency 48 V to 12 V intermediate bus converter in datacenter server power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in multiphase buck converter. Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, enabling >95 % efficiency at 100 A output.	Use Scenario: Input protection and hot-swap control in 100 W USB-C Power Delivery adapters. IC Role / Device Role / Timing Role: Load switch controlling 20 V input rail to downstream DC-DC stages. Use Value: Enables <10 μs overcurrent shutdown response using integrated R_DS(on)-based sensing.
Industrial PLC I/O Module	Automotive ADAS Camera Power Rail
Use Scenario: 24 V field power distribution in programmable logic controller digital output modules. IC Role / Device Role / Timing Role: Solid-state relay replacement for driving solenoids and indicators. Use Value: Eliminates mechanical wear and contact bounce; supports 100 k-cycle lifetime at 19.5 A.	Use Scenario: 5 V/3.3 V camera sensor rail sequencing and fault isolation in automotive surround-view systems. IC Role / Device Role / Timing Role: Pre-regulator switch upstream of LDOs, with fast short-circuit response. Use Value: Withstands 60 A pulsed drain current (I_DM) during ESD transients per ISO 10605.

Server VRM Synchronous Rectifier

USB-C PD Load Switch

Use Scenario: High-efficiency 48 V to 12 V intermediate bus converter in datacenter server power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in multiphase buck converter.

Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, enabling >95 % efficiency at 100 A output.

Use Scenario: Input protection and hot-swap control in 100 W USB-C Power Delivery adapters.

IC Role / Device Role / Timing Role: Load switch controlling 20 V input rail to downstream DC-DC stages.

Use Value: Enables <10 μs overcurrent shutdown response using integrated R_DS(on)-based sensing.

Industrial PLC I/O Module

Automotive ADAS Camera Power Rail

Use Scenario: 24 V field power distribution in programmable logic controller digital output modules.

IC Role / Device Role / Timing Role: Solid-state relay replacement for driving solenoids and indicators.

Use Value: Eliminates mechanical wear and contact bounce; supports 100 k-cycle lifetime at 19.5 A.

Use Scenario: 5 V/3.3 V camera sensor rail sequencing and fault isolation in automotive surround-view systems.

IC Role / Device Role / Timing Role: Pre-regulator switch upstream of LDOs, with fast short-circuit response.

Use Value: Withstands 60 A pulsed drain current (I_DM) during ESD transients per ISO 10605.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR176DP-T1-GE3	R_DS(on) = 0.0045 Ω @ 4.5 V, larger PowerPAK 1212-8 package (3.3 × 3.3 mm same, but taller profile)	Higher current rating (29 A) suits higher-power VRMs; not drop-in due to different thermal pad layout	Select when >25 A continuous current or lower R_DS(on) is required; verify PCB land pattern compatibility.
IRLML6344TRPBF	R_DS(on) = 0.022 Ω @ 4.5 V, SOT-23 package, lower Q_g (5.2 nC), no exposed drain	Limited to ≤3 A continuous use; suited for low-power logic-level switches, not power conversion	Choose only for space-constrained <5 W applications where thermal performance is secondary.

Compared with SiR176DP-T1-GE3 and IRLML6344TRPBF, the SISH106DN-T1-GE3 delivers optimal balance of low R_DS(on), moderate gate charge, and thermally robust PowerPAK 1212-8SH packaging - making it ideal for 10–20 W synchronous buck stages where board area and thermal headroom are constrained.

Availability

SISH106DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRM designs, USB-C PD adapters, industrial PLC I/O modules, and automotive ADAS camera power rails requiring stable component supply and long-term manufacturability.

Supply support for SISH106DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability power management solutions.

The SISH106DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV low-voltage MOSFET product line, engineered specifically for high-efficiency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current for SISH106DN-T1-GE3 at 70 °C ambient temperature?

The SISH106DN-T1-GE3 supports 15.6 A continuous drain current at T_A = 70 °C under steady-state conditions, as specified in the Absolute Maximum Ratings table. This value accounts for derating due to thermal resistance R_thJA = 65 °C/W and junction temperature limit of 150 °C. Designers must ensure adequate PCB copper area and airflow to sustain this current reliably.

Does SISH106DN-T1-GE3 have a guaranteed gate threshold voltage range?

Yes, the SISH106DN-T1-GE3 has a guaranteed V_GS(th) range of 0.6 V to 1.5 V at I_D = 250 μA, ensuring reliable turn-on with 2.5 V and 3.3 V logic-level drivers. This specification is tested and guaranteed per datasheet revision S18-0684-Rev. A, and applies directly to the SISH106DN-T1-GE3 variant.

Can SISH106DN-T1-GE3 be used in synchronous rectification for 5 V output rails?

Yes, the SISH106DN-T1-GE3 is suitable for 5 V synchronous rectification due to its low R_DS(on) of 0.0098 Ω at V_GS = 2.5 V and fast switching characteristics (t_d(on) = 25 ns typ., t_f = 12 ns typ.). Its body diode forward voltage (V_SD = 0.8–1.2 V) and reverse recovery time (t_rr = 30–60 ns) further support efficient operation in 500 kHz–1 MHz buck converters.

What is the thermal resistance from junction to case (R_thJC) for SISH106DN-T1-GE3?

The SISH106DN-T1-GE3 has a maximum junction-to-case (drain) thermal resistance of 2.4 °C/W under steady-state conditions, with a typical value of 1.9 °C/W. This low R_thJC is enabled by the exposed drain copper on the bottom side of the PowerPAK 1212-8SH package, allowing efficient heat transfer to the PCB ground plane.

Is SISH106DN-T1-GE3 qualified for automotive applications?

No, the SISH106DN-T1-GE3 is not AEC-Q101 qualified. It is rated for industrial temperature range (–55 °C to +150 °C), but lacks automotive-specific stress testing, failure analysis reporting, and PPAP documentation. For automotive ADAS camera rails, it may be used in non-safety-critical subsystems only after full system-level validation by the customer.

SISH106DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 12.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 6.2mOhm @ 19.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH106DN-T1-GE3 FAQ

1.How can I place an order for SISH106DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH106DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH106DN-T1-GE3 reliable?

The price and inventory of SISH106DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH106DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH106DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH106DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH106DN-T1-GE3?

SISH106DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH106DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH106DN-T1-GE3?

For technical support, including SISH106DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH106DN-T1-GE3 requirements.

6.How does Aetrix verify that SISH106DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH106DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH106DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH106DN-T1-GE3?

All SISH106DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH106DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH106DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH106DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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