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Vishay Siliconix SISH107DN-T1-GE3
- Part No.:
- SISH107DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SH
- Datasheet:
-
SISH107DN-T1-GE3.pdf
- Description:
- P-CHANNEL 30 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:11,770
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Product details
Overview
SISH107DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK 1212-8SH package, rated for -30 V drain-source voltage, 0.014 Ω RDS(on) at VGS = -10 V, and -34.4 A continuous drain current at TC = 25 °C. It serves as a high-efficiency load switch in notebook battery management and adapter power path control.
For engineers reviewing the SISH107DN-T1-GE3 datasheet, SISH107DN-T1-GE3 pinout, SISH107DN-T1-GE3 application, or SISH107DN-T1-GE3 equivalent, key selection criteria include its low RDS(on) at -4.5 V gate drive, 13.1 nC total gate charge, thermal resistance of 3.8 °C/W (junction-to-case), and compatibility with compact DC-DC power stage layouts requiring high-side switching capability.
Technical Context
This MOSFET uses TrenchFET® technology to achieve optimized conduction and switching performance in P-channel configuration. Its gate threshold voltage range (-1.0 V to -2.5 V) ensures reliable turn-on with standard logic-level negative gate drive, while the integrated body diode supports synchronous rectification and reverse-current blocking in bidirectional power paths.
The device is characterized for operation across -55 °C to +150 °C junction temperature, with 100 % Rg and UIS testing performed per production lot. Thermal design must account for its leadless PowerPAK 1212-8SH package, where bottom-side copper exposure enables efficient heat transfer to PCB copper planes without requiring solder fillets at terminal edges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for high-side switch applications in ≤30 V systems |
| RDS(on) @ VGS = -10 V | 0.014 Ω - Enables <15 mW conduction loss at 10 A, suitable for high-current load switching |
| RDS(on) @ VGS = -4.5 V | 0.0251 Ω - Ensures robust on-state performance with common -4.5 V gate drivers in portable systems |
| Qg typ. | 13.1 nC - Low gate charge reduces driver power demand and switching losses in 500 kHz–1 MHz DC-DC stages |
| ID continuous @ TC = 25 °C | -34.4 A - Supports high-current battery discharge paths without external heatsinking |
| RthJC max. | 4.7 °C/W - Enables direct thermal coupling to PCB copper for >20 W steady-state power dissipation |
| VGS(th) | -1.0 to -2.5 V - Guaranteed turn-on with logic-compatible negative gate bias, minimizing false triggering |
Pinout & Package
PowerPAK 1212-8SH is a surface-mount, leadless, thermally enhanced package with exposed copper drain pads on the bottom side. Dimensions: 3.3 mm × 3.3 mm × 0.9 mm. The top-side terminals are arranged in an 8-pin layout with dual-source and triple-drain configuration for low-inductance, high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection; four parallel pins reduce source inductance and improve current sharing |
| 5, 6, 7, 8 | Drain | Four parallel drain terminals tied to bottom-side thermal pad; primary current path and heat extraction node |
| G (center pad, top-side) | Gate | Single top-side gate pad; requires controlled trace routing to minimize ringing during fast switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for P-channel devices at -30 V rating |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting green manufacturing requirements |
| Exposed drain thermal pad | Enables direct thermal interface to inner-layer or bottom-side copper pour, reducing RthJA to ≤35 °C/W on 1"×1" FR4 |
| Low VSD body diode | VSD = -0.79 V @ IS = -3 A - Minimizes forward conduction loss during reverse-current events in battery protection circuits |
Applications
| Notebook Battery Protection Circuit | Notebook AC Adapter Switch |
|---|---|
Use Scenario: Bidirectional current monitoring and overcurrent cutoff in smart battery packs using SMBus or HDQ communication. IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as main battery disconnect switch, controlled by dedicated fuel gauge IC or system PMIC. Use Value: Low 0.0251 Ω RDS(on) at -4.5 V enables precise current sensing and minimal voltage drop during full-load discharge up to 12.6 A at ambient temperature. | Use Scenario: Automatic switchover between AC adapter input and battery supply in ultraportable notebooks. IC Role / Device Role / Timing Role: Load switch controlling power path from adapter to system rail, coordinated with buck converter enable signals. Use Value: Fast 10 ns turn-on delay and 5 ns rise time support seamless transition with <100 μs interruption, preventing brownout during adapter plug/unplug events. |
| USB-C PD Power Path Control | Industrial 24 V Backup Supply Switch |
Use Scenario: Reverse-current blocking and fault isolation in USB-C power delivery sink implementations with programmable voltage rails. IC Role / Device Role / Timing Role: Back-to-back P-channel switch providing bidirectional overvoltage and overcurrent protection upstream of PD controller. Use Value: -30 V VDS rating and -15 A avalanche current capability withstand 36 V transients per USB-C spec, while 11 ns body diode trr limits shoot-through risk. | Use Scenario: Hot-swap and redundancy switching in industrial PLC I/O modules powered from 24 V DC bus with battery backup. IC Role / Device Role / Timing Role: High-side switch enabling controlled inrush limiting and fail-safe disconnection during bus fault conditions. Use Value: 11.2 mJ single-pulse avalanche energy rating allows safe clamping of inductive kickback from solenoid loads without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI7157DP-T1-GE3 | RDS(on) = 0.022 Ω @ -4.5 V; higher Qg (16.5 nC); same PowerPAK 1212-8 package | Marginally higher conduction loss and slower switching in high-frequency load switching | Select when lower gate charge is not critical and cost sensitivity outweighs efficiency targets |
| IRF7470PBF | RDS(on) = 0.028 Ω @ -4.5 V; SO-8 package; higher RthJA (62 °C/W) | Requires larger PCB area and additional thermal vias for equivalent power handling | Select only if legacy SO-8 footprint compatibility is mandatory and thermal budget permits derating |
Compared with SI7157DP-T1-GE3 and IRF7470PBF, the SISH107DN-T1-GE3 delivers superior RDS(on) × Qg performance and lower thermal resistance in a space-constrained 3.3 mm × 3.3 mm footprint-making it optimal for next-generation portable power architectures where efficiency and board area are co-constrained.
Availability
SISH107DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook battery management, AC adapter power path switching, and industrial 24 V backup supply control requiring stable component supply and long-term lifecycle assurance.
Supply support for SISH107DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SISH107DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered for high-current, low-voltage load switching in space-constrained portable and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SISH107DN-T1-GE3 at 70 °C case temperature?
The SISH107DN-T1-GE3 supports -27.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and must be validated against actual PCB layout and airflow conditions in the end application. The SISH107DN-T1-GE3 datasheet confirms this value under steady-state conditions with proper thermal management.
Does SISH107DN-T1-GE3 have built-in ESD protection on the gate terminal?
The SISH107DN-T1-GE3 does not specify on-chip ESD protection diodes in its official datasheet. Gate-source leakage current is rated at ±100 nA at ±25 V, and absolute maximum VGS is ±25 V-indicating reliance on external gate resistors and layout best practices for ESD robustness. System-level ESD protection must be implemented externally per IEC 61000-4-2 requirements. The SISH107DN-T1-GE3 design assumes controlled handling and PCB-level safeguards.
Can SISH107DN-T1-GE3 be used in synchronous rectification configurations?
No-SISH107DN-T1-GE3 is a P-channel MOSFET intended for high-side switching, not synchronous rectification. Its body diode forward voltage (-0.79 V @ -3 A) and reverse recovery characteristics (trr = 11 ns) are not optimized for freewheeling in buck converters. Synchronous rectification typically requires N-channel devices with tightly controlled Qrr and low VF; the SISH107DN-T1-GE3 datasheet does not characterize it for that role.
What is the recommended solder profile for SISH107DN-T1-GE3?
The recommended peak solder temperature for SISH107DN-T1-GE3 is 260 °C, per Vishay document 73257. Due to its leadless PowerPAK 1212-8SH construction, manual rework with soldering irons is not advised. Reflow must follow JEDEC J-STD-020 moisture sensitivity level (MSL) 1 guidelines, and the exposed copper drain pad requires adequate stencil aperture and paste volume to ensure void-free thermal interface. The SISH107DN-T1-GE3 mounting instructions explicitly prohibit guaranteed solder fillets at terminal edges.
Is SISH107DN-T1-GE3 suitable for automotive applications?
The SISH107DN-T1-GE3 is not AEC-Q101 qualified and lacks automotive-grade qualification data in its datasheet. While its operating temperature range (-55 °C to +150 °C) meets under-hood thermal requirements, it has no documented PPAP documentation, failure-in-time (FIT) rates, or stress test reports required for automotive use. For automotive designs, Vishay offers AEC-Q101-qualified alternatives such as SQ2358CES-T1_GE3. The SISH107DN-T1-GE3 is intended for industrial and consumer portable power applications.
SISH107DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8SH
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.6A (Ta), 34.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.57W (Ta), 26.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8SH
SISH107DN-T1-GE3 FAQ
1.How can I place an order for SISH107DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISH107DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISH107DN-T1-GE3 reliable?
The price and inventory of SISH107DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH107DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISH107DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH107DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISH107DN-T1-GE3?
SISH107DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISH107DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISH107DN-T1-GE3?
For technical support, including SISH107DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH107DN-T1-GE3 requirements.
6.How does Aetrix verify that SISH107DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISH107DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH107DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISH107DN-T1-GE3?
All SISH107DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH107DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISH107DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISH107DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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