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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH108DN-T1-GE3

Name: SISH108DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH108DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISH108DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH108DN-T1-GE3.pdf

Description:: MOSFET N-CH 20V 14A PPAK1212-8SH

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Product details

Overview

SISH108DN-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) fast-switching TrenchFET® Gen II power MOSFET in PowerPAK® 1212-8SH package, delivering R_DS(on) = 4.1 mΩ at V_GS = 10 V and 5.0 mΩ at V_GS = 4.5 V, with 20 nC total gate charge and 22 A continuous drain current - optimized for high-efficiency synchronous rectification in point-of-load converters.

For engineers reviewing the SISH108DN-T1-GE3 datasheet, SISH108DN-T1-GE3 pinout, SISH108DN-T1-GE3 application, or SISH108DN-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, fast switching dynamics (t_d(off) ≤ 130 ns), thermal resistance R_thJA = 65 °C/W, and leadless PowerPAK 1212-8SH package compatibility with high-density DC/DC layouts.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining robust avalanche capability (E_AS = 24 mJ) and tight gate threshold voltage (V_GS(th) = 1–2 V). Its 100 % R_g tested gate resistance (0.7–2.1 Ω) ensures consistent turn-on/turn-off timing across production lots.

The device is characterized for operation up to T_J = +150 °C, with R_DS(on) normalized to 1.6× at 125 °C and 2.0× at 150 °C. Diode forward voltage (V_SD = 0.75–1.2 V at I_S = 3.2 A) supports efficient body-diode conduction during dead-time intervals in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; suitable for 12 V input systems with margin against transients.
R_DS(on) @ V_GS = 10 V	4.1 mΩ typ. - Enables <1 W conduction loss at 22 A, critical for high-current POL efficiency.
R_DS(on) @ V_GS = 4.5 V	5.0 mΩ typ. - Ensures low-loss operation with standard 5 V gate drivers in compact DC/DC modules.
Q_g	20 nC typ. - Supports high-frequency switching (>1 MHz) with manageable gate drive power and reduced EMI.
I_D (continuous)	22 A @ T_A = 25 °C - Rated for sustained load current in thermally constrained 1" × 1" FR4 PCB layouts.
R_thJA	65 °C/W (steady state) - Defines thermal derating slope: ~14 A max at T_A = 70 °C with standard layout.
E_AS	24 mJ - Withstands single-pulse inductive energy without failure; supports robust hot-swap and protection circuits.

Pinout & Package

PowerPAK® 1212-8SH is a leadless, surface-mount package measuring 3.3 mm × 3.3 mm × 0.9 mm, with exposed copper drain pads on the bottom side for enhanced thermal performance. The top-side terminals are arranged in a dual-row configuration with gate, source, and drain connections accessible via solderable terminations.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal die; electrically tied to bottom-side thermal pad - must be connected to PCB ground plane for optimal R_thJA.
5, 6, 7, 8	Drain (D)	High-current drain path; all four pins are internally paralleled to the die drain metallization - primary heat conduction path to PCB.
G (top-side center)	Gate (G)	Single gate terminal located centrally on top surface; requires controlled 4.5–10 V drive with <2.1 Ω series resistance to limit ringing and ensure clean switching.

Key Features

Feature	Design Value
TrenchFET® Gen II architecture	Delivers industry-leading R_DS(on) × Q_g figure of merit (82 mΩ·nC), minimizing combined conduction and switching losses.
100 % R_g tested	Guarantees gate resistance between 0.7–2.1 Ω, enabling predictable rise/fall times and reducing gate-drive design uncertainty.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912), supporting environmentally compliant manufacturing.
Single-pulse avalanche rated	Rated for 22 A single avalanche current and 24 mJ energy - validated for reliability in overvoltage and inductive kick scenarios.
PowerPAK 1212-8SH package	Reduces footprint by >50 % vs. SO-8 while improving thermal resistance by 40 % - enables higher power density in space-constrained POL designs.

Applications

Synchronous Rectification	Point-of-Load Converters
Use Scenario: Used as the low-side switch in synchronous buck converters powering FPGAs, ASICs, or GPUs with 3–12 V input and up to 25 A output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency at light-to-full load. Use Value: Achieves >95 % efficiency at 12 V → 1 V conversion with 22 A output due to 5.0 mΩ R_DS(on) at 4.5 V drive and fast 10 ns rise time.	Use Scenario: Integrated into compact, high-frequency (500 kHz–2 MHz) DC/DC modules for telecom baseband cards and server VRMs. IC Role / Device Role / Timing Role: Primary power switch handling high peak currents with minimal thermal rise on small PCB areas. Use Value: Enables 3.3 mm × 3.3 mm module footprint with 22 A rating and 65 °C/W R_thJA, eliminating need for external heatsinks.
Hot Swap Controllers	Protection Devices
Use Scenario: Employed as the main pass transistor in 12 V hot-swap circuits for backplane insertion with inrush current limiting. IC Role / Device Role / Timing Role: Controlled turn-on switch managing inrush via gate slew-rate control; sustains 60 A pulsed current during fault events. Use Value: Withstands 60 A pulsed drain current and 24 mJ avalanche energy, enabling reliable operation without external crowbar circuitry.	Use Scenario: Deployed in overcurrent and reverse-polarity protection circuits for industrial I/O modules and battery-powered equipment. IC Role / Device Role / Timing Role: Low-R_DS(on) series pass element with fast turn-off (<130 ns t_d(off)) to interrupt faults before damage occurs. Use Value: Limits forward voltage drop to <110 mV at 22 A, reducing power dissipation and thermal stress during normal operation.

Synchronous Rectification

Point-of-Load Converters

Use Scenario: Used as the low-side switch in synchronous buck converters powering FPGAs, ASICs, or GPUs with 3–12 V input and up to 25 A output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency at light-to-full load.

Use Value: Achieves >95 % efficiency at 12 V → 1 V conversion with 22 A output due to 5.0 mΩ R_DS(on) at 4.5 V drive and fast 10 ns rise time.

Use Scenario: Integrated into compact, high-frequency (500 kHz–2 MHz) DC/DC modules for telecom baseband cards and server VRMs.

IC Role / Device Role / Timing Role: Primary power switch handling high peak currents with minimal thermal rise on small PCB areas.

Use Value: Enables 3.3 mm × 3.3 mm module footprint with 22 A rating and 65 °C/W R_thJA, eliminating need for external heatsinks.

Hot Swap Controllers

Protection Devices

Use Scenario: Employed as the main pass transistor in 12 V hot-swap circuits for backplane insertion with inrush current limiting.

IC Role / Device Role / Timing Role: Controlled turn-on switch managing inrush via gate slew-rate control; sustains 60 A pulsed current during fault events.

Use Value: Withstands 60 A pulsed drain current and 24 mJ avalanche energy, enabling reliable operation without external crowbar circuitry.

Use Scenario: Deployed in overcurrent and reverse-polarity protection circuits for industrial I/O modules and battery-powered equipment.

IC Role / Device Role / Timing Role: Low-R_DS(on) series pass element with fast turn-off (<130 ns t_d(off)) to interrupt faults before damage occurs.

Use Value: Limits forward voltage drop to <110 mV at 22 A, reducing power dissipation and thermal stress during normal operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR176DP-T1-GE3	R_DS(on) = 3.2 mΩ @ 10 V, Q_g = 24 nC, same PowerPAK 1212-8SH package	Lower R_DS(on) but higher gate charge - better for low-frequency, high-current apps; less optimal for >1 MHz switching	Select when conduction loss dominates and gate drive capability permits higher Q_g.
IRLML6344TRPBF	R_DS(on) = 28 mΩ @ 4.5 V, SOT-23 package, 4.2 A I_D	Higher on-resistance, lower current rating, and inferior thermal performance - suited only for sub-5 A loads	Use only for cost-sensitive, low-power replacements where board space and thermal constraints allow SOT-23.

Compared with SiR176DP-T1-GE3 and IRLML6344TRPBF, the SISH108DN-T1-GE3 offers the best balance of low 4.5 V R_DS(on), moderate Q_g, and high current capability in a thermally efficient 3.3 mm × 3.3 mm footprint - making it ideal for mid-power POL and hot-swap applications requiring both efficiency and ruggedness.

Availability

SISH108DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, point-of-load converters, and hot-swap protection requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SISH108DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.

The SISH108DN-T1-GE3 belongs to Vishay's TrenchFET® Gen II family, engineered specifically for high-current, high-frequency DC/DC conversion where low R_DS(on) at logic-level gate drive and robust thermal performance are critical.

FAQ

What is the maximum continuous drain current for SISH108DN-T1-GE3 at 70 °C ambient temperature?

The SISH108DN-T1-GE3 supports 17.6 A continuous drain current at T_A = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This rating derives from its 2.0 W maximum power dissipation and 65 °C/W junction-to-ambient thermal resistance - users must verify PCB copper area and airflow to maintain this current in actual layouts.

Does SISH108DN-T1-GE3 support 3.3 V gate drive in practice?

The SISH108DN-T1-GE3 is not guaranteed for full enhancement at 3.3 V gate drive: its V_GS(th) range is 1–2 V, but R_DS(on) is only specified at V_GS = 4.5 V (6.1 mΩ max) and 10 V (4.9 mΩ max). At 3.3 V, R_DS(on) increases significantly - use 4.5 V or higher for reliable low-loss operation.

What is the recommended PCB pad layout for SISH108DN-T1-GE3's PowerPAK 1212-8SH package?

Vishay recommends minimum pads per Application Note 826: 0.094" × 0.152" (2.39 mm × 3.86 mm) for drain/source lands, with 0.039" (0.99 mm) spacing between pads. The central gate pad should be 0.068" × 0.068" (1.725 mm × 1.725 mm). Thermal vias under the bottom-side drain pad are strongly advised to reduce R_thJA.

Is SISH108DN-T1-GE3 suitable for avalanche operation in protection circuits?

Yes - the SISH108DN-T1-GE3 is fully rated for single-pulse avalanche with I_AS = 22 A and E_AS = 24 mJ. This capability is production-tested and documented in the Absolute Maximum Ratings table, making it appropriate for overvoltage clamping and inductive load switching in hot-swap and protection designs.

How does the PowerPAK 1212-8SH package of SISH108DN-T1-GE3 compare thermally to SO-8?

The PowerPAK 1212-8SH package delivers R_thJA = 65 °C/W (steady state), ~40 % lower than typical SO-8 packages (~105–110 °C/W). This improvement stems from direct copper exposure on the bottom side and shorter thermal paths - enabling higher current density without additional heatsinking in space-constrained applications.

SISH108DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen II

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH108DN-T1-GE3 FAQ

1.How can I place an order for SISH108DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH108DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH108DN-T1-GE3 reliable?

The price and inventory of SISH108DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH108DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH108DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH108DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH108DN-T1-GE3?

SISH108DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH108DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH108DN-T1-GE3?

For technical support, including SISH108DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH108DN-T1-GE3 requirements.

6.How does Aetrix verify that SISH108DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH108DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH108DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH108DN-T1-GE3?

All SISH108DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH108DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH108DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH108DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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