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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH112DN-T1-GE3

Name: SISH112DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH112DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISH112DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH112DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 11.3A PPAK

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Product details

Overview

SISH112DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in a PowerPAK® 1212-8SH package, delivering R_DS(on) = 7.5 mΩ at V_GS = 10 V and 8.2 mΩ at V_GS = 4.5 V, with 17.8 A continuous drain current and 18 nC total gate charge - optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SISH112DN-T1-GE3 datasheet, SISH112DN-T1-GE3 pinout, SISH112DN-T1-GE3 application, or SISH112DN-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, fast switching (t_d(off) ≤ 100 ns), integrated body diode performance (V_SD = 0.7–1.2 V), and thermal resistance R_thJC = 1.9 °C/W for high-power-density load switch designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (V_GS(th)) ranges from 0.6 V to 1.5 V, enabling reliable turn-on with standard logic-level drivers, while its 100 % R_g tested gate resistance (0.5–1.8 Ω) ensures consistent switching timing across production lots.

The device features a single N-channel configuration with source-drain diode recovery time (t_rr) of 30–60 ns and reverse recovery charge (Q_rr) of 18 nC - critical for minimizing losses in synchronous buck topologies operating above 300 kHz. Thermal design is supported by R_thJC = 1.9 °C/W and R_thJA = 65 °C/W (steady-state) on FR4 board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with 25 % margin for transients in industrial and telecom power supplies
R_DS(on) @ 10 V	7.5 mΩ - enables <1.3 W conduction loss at 17.8 A, suitable for high-current output stages
R_DS(on) @ 4.5 V	8.2 mΩ - ensures robust operation with 5 V or 4.5 V gate drive from microcontrollers or PWM controllers
Q_g	18 nC typ. - allows efficient 1 MHz switching with moderate gate driver strength (e.g., TC4427)
I_D (continuous)	17.8 A @ T_C = 25 °C - delivers high current density in compact 3.3 mm × 3.3 mm footprint
t_r/t_f	10–15 ns - minimizes switching transition losses in high-frequency DC/DC converters
V_SD	0.7–1.2 V - low forward drop reduces reverse conduction loss during synchronous rectification dead-time

Pinout & Package

PowerPAK® 1212-8SH is a leadless, surface-mount package with exposed drain pad on bottom side for enhanced thermal performance. Dimensions: 3.3 mm × 3.3 mm × 0.9 mm (L × W × H), with 0.65 mm pitch between terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (S)	Source	Common source connection for internal die; tied to PCB ground plane via multiple pads for low-inductance return path
5, 6, 7, 8 (D)	Drain	Exposed copper drain pad on bottom; primary thermal path to PCB copper; requires solder stencil aperture per Vishay AN826
G (top-side pad)	Gate	Single top-side gate terminal; isolated from drain/source; controls channel conduction with minimal Miller capacitance (C_rss = 145 pF)

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 7.5 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint - 35 % lower on-resistance than planar equivalents at same voltage rating
100 % R_g tested	Guarantees gate resistance between 0.5 Ω and 1.8 Ω - eliminates timing skew in paralleled MOSFET configurations
Low Q_gd/Q_g ratio	Q_gd = 3.1 nC of total Q_g = 18 nC - improves hard-switching EMI behavior and reduces Miller-induced shoot-through risk
Optimized body diode	V_SD = 0.7 V typ. at 3.2 A, t_rr = 30 ns - reduces reverse recovery loss versus standard silicon diodes in synchronous rectifier mode
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - qualified for automotive and industrial reflow profiles up to 260 °C peak

Applications

Synchronous Buck Converter	Hot-Swap Load Switch
Use Scenario: Secondary-side switch in 12 V → 1.2 V/30 A point-of-load converter for server CPU VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 90 %. Use Value: 8.2 mΩ R_DS(on) at 4.5 V gate drive enables >95 % efficiency at full load, with 30 ns t_rr minimizing dead-time loss.	Use Scenario: Inrush-limited 5 V/10 A power rail enable for FPGA I/O banks in industrial PLC modules. IC Role / Device Role / Timing Role: Low-side load switch controlled by microcontroller GPIO to sequence power-up and prevent bus contention. Use Value: 17.8 A continuous rating and 60 A pulsed capability support surge currents during capacitor charging without derating.
USB-C PD Power Path	Motor Driver Half-Bridge
Use Scenario: 20 V input path switch in USB-C PD 3.0 sink adapter supporting 60 W delivery. IC Role / Device Role / Timing Role: High-side or low-side pass element managing bidirectional power flow under PD contract negotiation. Use Value: 30 V V_DS rating accommodates 20 V + 20 % tolerance; 18 nC Q_g allows fast enable/disable response to PD policy engine commands.	Use Scenario: Low-side switch in 24 V brushed DC motor driver for HVAC damper actuator (3 A RMS, 10 A peak). IC Role / Device Role / Timing Role: PWM-controlled power stage switch with integrated body diode providing freewheeling path. Use Value: 1.2 V V_SD max and 20 mJ E_AS rating ensure robust operation during inductive flyback events without external snubber.

Synchronous Buck Converter

Hot-Swap Load Switch

Use Scenario: Secondary-side switch in 12 V → 1.2 V/30 A point-of-load converter for server CPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 90 %.

Use Value: 8.2 mΩ R_DS(on) at 4.5 V gate drive enables >95 % efficiency at full load, with 30 ns t_rr minimizing dead-time loss.

Use Scenario: Inrush-limited 5 V/10 A power rail enable for FPGA I/O banks in industrial PLC modules.

IC Role / Device Role / Timing Role: Low-side load switch controlled by microcontroller GPIO to sequence power-up and prevent bus contention.

Use Value: 17.8 A continuous rating and 60 A pulsed capability support surge currents during capacitor charging without derating.

USB-C PD Power Path

Motor Driver Half-Bridge

Use Scenario: 20 V input path switch in USB-C PD 3.0 sink adapter supporting 60 W delivery.

IC Role / Device Role / Timing Role: High-side or low-side pass element managing bidirectional power flow under PD contract negotiation.

Use Value: 30 V V_DS rating accommodates 20 V + 20 % tolerance; 18 nC Q_g allows fast enable/disable response to PD policy engine commands.

Use Scenario: Low-side switch in 24 V brushed DC motor driver for HVAC damper actuator (3 A RMS, 10 A peak).

IC Role / Device Role / Timing Role: PWM-controlled power stage switch with integrated body diode providing freewheeling path.

Use Value: 1.2 V V_SD max and 20 mJ E_AS rating ensure robust operation during inductive flyback events without external snubber.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR176DP-T1-GE3	R_DS(on) = 6.0 mΩ @ 10 V, but 9.5 mΩ @ 4.5 V; larger PowerPAK 1212-8 package (same footprint, thicker profile)	Better conduction loss at 10 V drive; less suitable for 4.5 V logic-level control	Select when gate drive ≥ 10 V is available and lowest R_DS(on) is prioritized over gate voltage flexibility
IRLHS6242TRPBF	R_DS(on) = 7.8 mΩ @ 4.5 V; Q_g = 22 nC; SO-8 package with higher R_thJA (81 °C/W)	Higher gate charge increases driver requirements; through-hole-compatible SO-8 limits board density	Choose for legacy SO-8 layouts where footprint compatibility outweighs thermal and switching performance gains

Compared with SiR176DP-T1-GE3 and IRLHS6242TRPBF, the SISH112DN-T1-GE3 offers optimal balance of 4.5 V drive capability, 18 nC gate charge, and 1.9 °C/W junction-to-case thermal resistance - making it preferred for space-constrained, high-frequency synchronous rectifiers requiring stable low-voltage gate control.

Availability

SISH112DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, hot-swap load switching, and USB-C PD power path management requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SISH112DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial, computing, and automotive markets.

The SISH112DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency DC/DC conversion where low R_DS(on), fast switching, and robust body diode performance are critical.

FAQ

What is the maximum continuous drain current for SISH112DN-T1-GE3 at 70 °C case temperature?

The SISH112DN-T1-GE3 supports 9.1 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8SH package under typical PCB copper area conditions. Engineers must verify layout thermal relief and ambient airflow to sustain this current in production systems.

Does SISH112DN-T1-GE3 have a guaranteed gate threshold voltage range?

Yes, the SISH112DN-T1-GE3 has a guaranteed V_GS(th) range of 0.6 V to 1.5 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 μA. This wide threshold ensures reliable turn-on with 3.3 V or 5 V logic drivers while maintaining noise immunity against spurious gate excitation in noisy power environments.

Can SISH112DN-T1-GE3 be used in parallel configurations?

Yes, the SISH112DN-T1-GE3 is suitable for paralleling due to its 100 % R_g testing, which guarantees gate resistance between 0.5 Ω and 1.8 Ω across all units. This tight R_g distribution minimizes dynamic current imbalance during switching transitions, reducing the need for individual gate resistors in multi-phase or high-current designs.

What is the recommended solder profile for SISH112DN-T1-GE3?

The recommended peak solder temperature for SISH112DN-T1-GE3 is 260 °C, per Vishay document 73257. The PowerPAK 1212-8SH package requires precise stencil design (per Application Note 826) to ensure adequate solder fillet on the exposed drain pad. Manual rework with soldering iron is not recommended due to its leadless construction and thermal mass asymmetry.

How does the body diode performance of SISH112DN-T1-GE3 compare to standard Schottky diodes?

The SISH112DN-T1-GE3 body diode exhibits V_SD = 0.7–1.2 V at 3.2 A and t_rr = 30–60 ns, offering lower forward voltage than many 30 V Schottky diodes (typically 0.45–0.55 V but with higher leakage). Its advantage lies in integration - eliminating discrete diode placement and parasitic inductance - while maintaining acceptable reverse recovery in synchronous rectifier applications up to 1 MHz.

SISH112DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 17.8A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2610 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH112DN-T1-GE3 FAQ

1.How can I place an order for SISH112DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH112DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH112DN-T1-GE3 reliable?

The price and inventory of SISH112DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH112DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH112DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH112DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH112DN-T1-GE3?

SISH112DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH112DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH112DN-T1-GE3?

For technical support, including SISH112DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH112DN-T1-GE3 requirements.

6.How does Aetrix verify that SISH112DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH112DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH112DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH112DN-T1-GE3?

All SISH112DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH112DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH112DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH112DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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