Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH114ADN-T1-GE3

Name: SISH114ADN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH114ADN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SISH114ADN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH114ADN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 18A/35A PPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,982

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SISH114ADN-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in a PowerPAK® 1212-8SH package, delivering R_DS(on) = 7.5 mΩ at V_GS = 10 V and 9.8 mΩ at V_GS = 4.5 V, with 35 A continuous drain current (T_C = 25 °C) and 10.2 nC total gate charge - optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SISH114ADN-T1-GE3 datasheet, SISH114ADN-T1-GE3 pinout, SISH114ADN-T1-GE3 application, or SISH114ADN-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, robust UIS-rated ruggedness, thermal performance under PCB-limited conditions, and compatibility with compact PowerPAK 1212-8SH layout constraints.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge (Q_g = 10.2 nC typ. at V_GS = 4.5 V). Its 30 V V_DS rating supports 24 V input rail systems, while the 100 % UIS-tested construction ensures reliability under inductive switching stress.

The device features a source-drain body diode with t_rr = 24–36 ns and Q_rr = 20–30 nC, enabling efficient reverse recovery in synchronous buck topologies. Thermal design leverages R_thJC = 2.4 °C/W (max) and R_thJA = 34 °C/W (max, 1" × 1" FR4), with junction temperature range from –55 °C to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 24 V nominal input rails with 20 % margin for transients
R_DS(on) @ 10 V	7.5 mΩ max - Enables <1 W conduction loss at 35 A in high-current paths
R_DS(on) @ 4.5 V	9.8 mΩ max - Ensures low-loss operation with 5 V or 3.3 V gate drivers
Q_g	10.2 nC typ. - Reduces gate drive power and enables >1 MHz switching
I_D (continuous)	35 A @ T_C = 25 °C - Suitable for high-current output stages without external heatsink
E_AS	45 mJ - Withstands repetitive inductive energy spikes in synchronous rectifier mode
R_thJC	2.4 °C/W max - Allows direct thermal coupling to copper planes or heatsinks

Pinout & Package

PowerPAK® 1212-8SH is a leadless, surface-mount package measuring 3.3 mm × 3.3 mm × 0.9 mm, with exposed drain pads on the bottom side for enhanced thermal and electrical performance. The top-side terminals are arranged in a single-row configuration with G, D, and S connections distributed across eight terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; low-inductance parallel routing reduces switching losses
5, 6, 7, 8	Drain (D)	High-current drain path; bottom-side exposed copper improves thermal transfer to PCB
G (pin not numbered; top-side center)	Gate (G)	Single gate terminal located centrally on top die surface; requires controlled trace impedance

Key Features

Feature	Design Value
TrenchFET® architecture	Enables ultra-low R_DS(on) and high cell density in 3.3 mm × 3.3 mm footprint
100 % R_g and UIS tested	Guarantees gate resistance consistency and ruggedness against unclamped inductive switching
PowerPAK 1212-8SH package	Reduces parasitic inductance by >30 % vs. SO-8; enables higher efficiency in space-constrained designs
Body diode t_rr = 24–36 ns	Minimizes reverse recovery loss and EMI in synchronous rectifier applications
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow compliance

Applications

Server VRM Output Stage	Industrial DC/DC Converter
Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage (0.8–1.2 V) at up to 120 A. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss. Use Value: Achieves >95 % efficiency at 1 MHz switching with 9.8 mΩ R_DS(on) at 4.5 V gate drive and minimal Q_rr-induced loss.	Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC/DC module for PLC I/O power rails. IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in flyback or forward topology. Use Value: Delivers stable 35 A continuous current with 45 mJ avalanche energy rating for transient overload protection.
Telecom PoE++ PSE	Automotive ADAS Camera Power Supply
Use Scenario: 57 V PoE++ power sourcing equipment delivering up to 90 W per port with integrated hot-swap control. IC Role / Device Role / Timing Role: Hot-swap FET in primary power path, handling inrush and short-circuit events. Use Value: Withstands 60 A pulsed drain current and 30 A avalanche current, supporting IEEE 802.3bt fault tolerance.	Use Scenario: Compact 12 V to 3.3 V point-of-load regulator powering image sensor and ISP in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: Synchronous rectifier in monolithic buck IC or discrete controller-based design. Use Value: Operates reliably from –40 °C to +125 °C ambient, with V_GS(th) = 1.2–2.5 V ensuring turn-on stability across temperature.

Server VRM Output Stage

Industrial DC/DC Converter

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage (0.8–1.2 V) at up to 120 A.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >95 % efficiency at 1 MHz switching with 9.8 mΩ R_DS(on) at 4.5 V gate drive and minimal Q_rr-induced loss.

Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC/DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in flyback or forward topology.

Use Value: Delivers stable 35 A continuous current with 45 mJ avalanche energy rating for transient overload protection.

Telecom PoE++ PSE

Automotive ADAS Camera Power Supply

Use Scenario: 57 V PoE++ power sourcing equipment delivering up to 90 W per port with integrated hot-swap control.

IC Role / Device Role / Timing Role: Hot-swap FET in primary power path, handling inrush and short-circuit events.

Use Value: Withstands 60 A pulsed drain current and 30 A avalanche current, supporting IEEE 802.3bt fault tolerance.

Use Scenario: Compact 12 V to 3.3 V point-of-load regulator powering image sensor and ISP in rear-view or surround-view camera modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in monolithic buck IC or discrete controller-based design.

Use Value: Operates reliably from –40 °C to +125 °C ambient, with V_GS(th) = 1.2–2.5 V ensuring turn-on stability across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242TRPBF	R_DS(on) = 8.5 mΩ @ 4.5 V; Q_g = 12.5 nC; PowerPAK SO-8 package (larger footprint)	Higher gate charge increases driver loss; larger package limits board density	Choose when legacy SO-8 layout compatibility is required over thermal performance
DMTH3007LPSQ-13	R_DS(on) = 7.0 mΩ @ 4.5 V; Q_g = 11.5 nC; PowerDI 3333 package (3.3 mm × 3.3 mm, but different pinout)	Lower R_DS(on) improves conduction loss, but non-pin-compatible layout redesign needed	Choose for marginal efficiency gain where board rework is acceptable

Compared with IRLHS6242TRPBF and DMTH3007LPSQ-13, the SISH114ADN-T1-GE3 offers best-in-class thermal resistance (R_thJC = 2.4 °C/W) and lowest Q_g/R_DS(on) ratio for 3.3 mm × 3.3 mm packages, making it optimal for thermally constrained, high-frequency synchronous rectifiers.

Availability

SISH114ADN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, telecom PoE++ PSEs, and automotive ADAS camera power supplies requiring stable component supply and long-term production continuity.

Supply support for SISH114ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and miniaturization.

The PowerPAK 1212-8SH MOSFET product line targets high-density power conversion in computing, telecom, and automotive applications where thermal performance and low gate charge are critical.

FAQ

What is the maximum continuous drain current rating for SISH114ADN-T1-GE3 at 70 °C case temperature?

The SISH114ADN-T1-GE3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects package-limited conduction capability under sustained thermal conditions, independent of PCB layout limitations.

Does SISH114ADN-T1-GE3 have a guaranteed gate threshold voltage range?

Yes, the SISH114ADN-T1-GE3 has a guaranteed V_GS(th) range of 1.2 V to 2.5 V at T_J = 25 °C and I_D = 250 μA. This ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers across temperature.

Can SISH114ADN-T1-GE3 be used in avalanche-mode operation?

Yes, the SISH114ADN-T1-GE3 is 100 % UIS tested and rated for 30 A avalanche current (I_AS) and 45 mJ single-pulse avalanche energy (E_AS), making it suitable for circuits subject to inductive switching stress without external clamping.

What is the thermal resistance from junction to case (R_thJC) for SISH114ADN-T1-GE3?

The SISH114ADN-T1-GE3 has a maximum R_thJC of 3.2 °C/W and typical value of 2.4 °C/W, measured from junction to the drain pad. This low value enables effective heat transfer to internal PCB copper or external heatsinks in high-power applications.

Is SISH114ADN-T1-GE3 compatible with standard reflow soldering profiles?

Yes, the SISH114ADN-T1-GE3 is qualified for peak reflow temperatures up to 260 °C per JEDEC J-STD-020, matching standard lead-free processes. Manual soldering with an iron is not recommended due to its leadless PowerPAK 1212-8SH construction.

SISH114ADN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1230 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH114ADN-T1-GE3 FAQ

1.How can I place an order for SISH114ADN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH114ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH114ADN-T1-GE3 reliable?

The price and inventory of SISH114ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH114ADN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH114ADN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH114ADN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH114ADN-T1-GE3?

SISH114ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH114ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH114ADN-T1-GE3?

For technical support, including SISH114ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH114ADN-T1-GE3 requirements.

6.How does Aetrix verify that SISH114ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH114ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH114ADN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH114ADN-T1-GE3?

All SISH114ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH114ADN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH114ADN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH114ADN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …