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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH129DN-T1-GE3

Name: SISH129DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH129DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISH129DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH129DN-T1-GE3.pdf

Description:: MOSFET P-CH 30V 14.4A/35A PPAK

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Product details

Overview

SISH129DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® 1212-8SH package, rated for -30 V drain-source voltage, 0.0114 Ω R_DS(on) at V_GS = -10 V, and -35 A continuous drain current at T_C = 25 °C, optimized for high-efficiency load switching in portable computing power rails.

For engineers reviewing the SISH129DN-T1-GE3 datasheet, SISH129DN-T1-GE3 pinout, SISH129DN-T1-GE3 application, or SISH129DN-T1-GE3 equivalent, this device is selected for low R_DS(on), fast switching (Q_g = 24.6 nC at V_GS = -4.5 V), and thermal performance in space-constrained DC-DC output stages and adapter power path control.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and high transconductance (g_fs = 37 S) while maintaining robust avalanche capability (E_AS = 31.25 mJ). Its gate threshold voltage (V_GS(th) = -1.5 to -2.8 V) ensures reliable turn-on with standard logic-level gate drivers.

The PowerPAK 1212-8SH package delivers low junction-to-case thermal resistance (R_thJC = 1.9 °C/W max) and supports high-current operation without external heatsinking when mounted on 1" × 1" FR4 board - critical for notebook PC battery-switch and USB-C PD adapter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 24 V input rail protection and reverse-polarity safeguarding
R_DS(on) @ V_GS = -10 V	0.0114 Ω - Enables ≤ 1.2 W conduction loss at -14.4 A, supporting high-efficiency load switch design
R_DS(on) @ V_GS = -4.5 V	0.0200 Ω - Ensures full enhancement with 5 V logic or buck converter gate drive without level-shifting
Q_g typ.	24.6 nC - Low total gate charge enables fast turn-on/off (t_r = 43 ns, t_f = 14 ns) with minimal driver power demand
I_D (continuous)	-35 A @ T_C = 25 °C - Supports high-current hot-swap and adapter enable functions without derating
Power dissipation	52.1 W @ T_C = 25 °C - High thermal capability due to low R_thJC (1.9 °C/W), enabling compact PCB layout
Body diode V_SD	-0.8 to -1.2 V @ I_F = -10 A - Low forward drop improves efficiency in synchronous rectifier or back-bias protection roles

Pinout & Package

PowerPAK® 1212-8SH is a leadless, surface-mount package measuring 3.3 mm × 3.3 mm × 0.9 mm with exposed drain pads on bottom side for enhanced thermal conduction. Pin numbering follows bottom-view orientation with pins 1–4 as source (S), pin 5 as gate (G), and pins 6–8 as drain (D).

Pin/Terminal	Circuit Role	Design Meaning
1–4 (Bottom view)	Source (S)	Common source connection for internal channel; electrically tied to thermal pad for low-inductance return path
5	Gate (G)	Control terminal requiring <25 nC charge for full enhancement; gate resistance R_g = 0.4–3.6 Ω limits ringing
6–8	Drain (D)	High-current drain terminals connected to exposed copper bottom-side pads; primary heat transfer path to PCB

Key Features

Feature	Design Value
TrenchFET® technology	Enables ultra-low R_DS(on) and high g_fs while maintaining ruggedness against UIS and avalanche stress
100 % R_g and UIS tested	Guarantees gate robustness and unclamped inductive switching reliability for automotive-grade load switching
PowerPAK 1212-8SH package	Reduces thermal resistance by >40 % vs. SO-8; eliminates lead inductance for faster switching and lower EMI
Low Q_gd/Q_g ratio	Q_gd = 12 nC / Q_g = 24.6 nC → 0.49 - Improves Miller immunity and hard-switching stability in high-dV/dt environments
Body diode t_rr	31–47 ns - Fast recovery minimizes shoot-through risk and conduction loss in bidirectional power path applications

Applications

Adapter Power Switch	Notebook PC Battery Protection
Use Scenario: Controls 19–20 V input from AC/DC adapter to system rail, enabling/disabling power during sleep or fault conditions. IC Role / Device Role / Timing Role: High-side P-channel load switch managing power path integrity and reverse-voltage blocking. Use Value: R_DS(on) = 0.0200 Ω at -4.5 V gate drive ensures <1.5 W loss at 12 A, eliminating need for active cooling in slim chassis.	Use Scenario: Isolates main battery from system during charging or overvoltage events to prevent damage or thermal runaway. IC Role / Device Role / Timing Role: Bidirectional blocking switch with integrated body diode used for reverse-current prevention and safe discharge path. Use Value: -30 V rating and -25 A avalanche current (I_AS) withstand transient surges during hot-plug or short-circuit events.
USB-C PD Power Path	Industrial 24 V Hot-Swap Controller
Use Scenario: Enables dual-role power delivery in USB-C ports, supporting both sink and source configurations via controlled VBUS switching. IC Role / Device Role / Timing Role: Logic-level compatible P-MOSFET acting as programmable power switch with fast turn-off (t_f = 14 ns) for fault response. Use Value: Low Q_g (24.6 nC) allows microcontroller-driven gate control without dedicated driver IC, reducing BOM count.	Use Scenario: Provides controlled inrush limiting and overcurrent isolation in programmable logic controller (PLC) I/O modules powered from 24 V industrial bus. IC Role / Device Role / Timing Role: High-reliability load switch with 100 % UIS testing ensuring survival under repetitive inductive load switching. Use Value: Junction-to-case thermal resistance of 1.9 °C/W enables sustained -25 A operation at 70 °C ambient without derating.

Adapter Power Switch

Notebook PC Battery Protection

Use Scenario: Controls 19–20 V input from AC/DC adapter to system rail, enabling/disabling power during sleep or fault conditions.

IC Role / Device Role / Timing Role: High-side P-channel load switch managing power path integrity and reverse-voltage blocking.

Use Value: R_DS(on) = 0.0200 Ω at -4.5 V gate drive ensures <1.5 W loss at 12 A, eliminating need for active cooling in slim chassis.

Use Scenario: Isolates main battery from system during charging or overvoltage events to prevent damage or thermal runaway.

IC Role / Device Role / Timing Role: Bidirectional blocking switch with integrated body diode used for reverse-current prevention and safe discharge path.

Use Value: -30 V rating and -25 A avalanche current (I_AS) withstand transient surges during hot-plug or short-circuit events.

USB-C PD Power Path

Industrial 24 V Hot-Swap Controller

Use Scenario: Enables dual-role power delivery in USB-C ports, supporting both sink and source configurations via controlled VBUS switching.

IC Role / Device Role / Timing Role: Logic-level compatible P-MOSFET acting as programmable power switch with fast turn-off (t_f = 14 ns) for fault response.

Use Value: Low Q_g (24.6 nC) allows microcontroller-driven gate control without dedicated driver IC, reducing BOM count.

Use Scenario: Provides controlled inrush limiting and overcurrent isolation in programmable logic controller (PLC) I/O modules powered from 24 V industrial bus.

IC Role / Device Role / Timing Role: High-reliability load switch with 100 % UIS testing ensuring survival under repetitive inductive load switching.

Use Value: Junction-to-case thermal resistance of 1.9 °C/W enables sustained -25 A operation at 70 °C ambient without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiRA20DP-T1-GE3	R_DS(on) = 0.0095 Ω @ -10 V but higher Q_g = 47.5 nC; same PowerPAK 1212-8SH package	Better conduction loss at high V_GS, but slower switching and higher driver demand	Select when lowest R_DS(on) dominates over switching speed; verify gate driver capability for 47.5 nC charge
IRF7470PBF	SO-8 package, R_DS(on) = 0.012 Ω @ -10 V, R_thJA = 62 °C/W - significantly higher thermal resistance	Compatible footprint but requires larger PCB area and heatsinking for same current	Choose only if legacy SO-8 layout reuse is mandatory; expect ~3× higher junction temperature rise at 15 A

Compared with SiRA20DP-T1-GE3 and IRF7470PBF, the SISH129DN-T1-GE3 balances low gate charge (24.6 nC), moderate R_DS(on) (0.0200 Ω @ -4.5 V), and superior thermal performance (R_thJC = 1.9 °C/W) - making it optimal for space- and thermally constrained adapter and notebook applications where logic-level drive and fast response are essential.

Availability

SISH129DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC battery management, USB-C PD power path control, and industrial 24 V hot-swap applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SISH129DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISH129DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® portfolio, engineered specifically for high-current, low-voltage load switching in portable and industrial power systems where thermal density and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for SISH129DN-T1-GE3 at 70 °C case temperature?

The SISH129DN-T1-GE3 supports -35 A continuous drain current at T_C = 70 °C per its Absolute Maximum Ratings table. This rating is enabled by the PowerPAK 1212-8SH package's low junction-to-case thermal resistance (R_thJC = 1.9 °C/W), allowing high current without exceeding the 150 °C maximum junction temperature under proper PCB copper pour conditions.

Does SISH129DN-T1-GE3 require a gate driver for logic-level operation?

No, the SISH129DN-T1-GE3 does not require an external gate driver for logic-level operation. Its gate threshold voltage (V_GS(th) = -1.5 to -2.8 V) and low total gate charge (Q_g = 24.6 nC at -4.5 V) allow direct drive from standard 3.3 V or 5 V microcontrollers or PMIC outputs - verified by its R_DS(on) = 0.0200 Ω specification at V_GS = -4.5 V.

What is the avalanche energy rating of SISH129DN-T1-GE3, and how is it tested?

The SISH129DN-T1-GE3 has a single-pulse avalanche energy rating (E_AS) of 31.25 mJ, measured under L = 0.1 mH with I_AS = -25 A. It is 100 % unclamped inductive switching (UIS) tested per JEDEC standards, ensuring each unit survives specified avalanche stress - a key reliability feature for load-switch applications subject to inductive transients.

Can SISH129DN-T1-GE3 be used in bidirectional current flow applications?

Yes, the SISH129DN-T1-GE3 supports bidirectional current flow via its intrinsic body diode, which exhibits V_SD = -0.8 to -1.2 V at -10 A and fast reverse recovery (t_rr = 31–47 ns). This enables use in battery backup paths, USB-C dual-role power, and reverse-current protection circuits - provided external circuitry manages gate bias during reverse conduction.

What is the recommended PCB pad layout for SISH129DN-T1-GE3 in PowerPAK 1212-8SH?

The recommended minimum PCB pad layout for SISH129DN-T1-GE3 follows Vishay Application Note 826: 0.094" × 0.152" (2.39 mm × 3.86 mm) for the central thermal pad, with 0.039" (0.99 mm) wide traces for source and gate connections. The exposed drain pads (pins 6–8) must be fully soldered to inner-layer copper planes to achieve specified R_thJC and power handling.

SISH129DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14.4A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.4mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3345 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 52.1W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH129DN-T1-GE3 FAQ

1.How can I place an order for SISH129DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH129DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH129DN-T1-GE3 reliable?

The price and inventory of SISH129DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH129DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH129DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH129DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH129DN-T1-GE3?

SISH129DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH129DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH129DN-T1-GE3?

For technical support, including SISH129DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH129DN-T1-GE3 requirements.

6.How does Aetrix verify that SISH129DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH129DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH129DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH129DN-T1-GE3?

All SISH129DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH129DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH129DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH129DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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