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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH402DN-T1-GE3

Name: SISH402DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH402DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISH402DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH402DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 19A/35A PPAK

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Product details

Overview

SISH402DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in PowerPAK® 1212-8SH package, rated for 35 A continuous drain current at TC = 25 °C, with RDS(on) of 6.0 mΩ at VGS = 10 V and 8.0 mΩ at VGS = 4.5 V, optimized for high-efficiency DC/DC conversion in notebook and point-of-load (POL) systems.

For engineers reviewing the SISH402DN-T1-GE3 datasheet, SISH402DN-T1-GE3 pinout, SISH402DN-T1-GE3 application, or SISH402DN-T1-GE3 equivalent, key selection criteria include its low gate charge (12 nC typ. at 4.5 V), robust UIS rating, 100 % Rg tested performance, and thermal resistance profile suitable for compact, thermally constrained POL designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg/Qgd ratio. Its gate threshold voltage (1.15–2.2 V) enables reliable 4.5 V logic-level drive, while the 1.9 °C/W junction-to-case thermal resistance supports high-power-density mounting on thermally enhanced PCBs.

The device integrates a robust body diode with trr = 25–50 ns and Qrr = 17–35 nC, enabling synchronous rectification in buck converters. Its PowerPAK 1212-8SH package features exposed copper drain pads on the bottom side for direct thermal coupling-no solder fillet required at singulated edges per Vishay specification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in POL converters
R_DS(on) @ V_GS = 10 V	6.0 mΩ max - Enables <1 W conduction loss at 19 A, critical for >95 % efficiency at high load
R_DS(on) @ V_GS = 4.5 V	8.0 mΩ max - Supports direct drive from 5 V microcontrollers or PWM controllers without level shifting
Q_g typ.	12 nC at 4.5 V - Low gate charge reduces driver power loss and enables >1 MHz switching in high-frequency POL stages
I_D cont. @ T_C = 25 °C	35 A - Sustains high-current output in compact 3.3 mm × 3.3 mm footprint without external heatsink
R_thJC	1.9 °C/W max - Allows efficient heat transfer to PCB copper or thermal pad, supporting >30 W dissipation with proper layout
Body diode V_SD	0.8–1.2 V at I_S = 10 A - Low forward drop minimizes reverse recovery losses during synchronous FET dead-time

Pinout & Package

PowerPAK® 1212-8SH is a leadless surface-mount package with 3.3 mm × 3.3 mm footprint, 0.9 mm height, and exposed drain copper on the bottom side for thermal conduction. Pin numbering follows standard bottom-view orientation with pins 1–4 as source, 5–8 as drain, and pin G as gate.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal die; electrically tied to PCB ground plane for low-inductance return path
5, 6, 7, 8	Drain (D)	High-current drain terminals; exposed copper on bottom provides primary thermal path to PCB copper pour
G	Gate (G)	Control terminal requiring <12 nC charge; gate resistance 1.2–2.4 Ω ensures stable turn-on/turn-off without oscillation

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 6.0 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint-reduces conduction loss by >30 % vs. comparable SO-8 MOSFETs
100 % R_g and UIS tested	Guarantees gate robustness against ESD and avalanche energy handling up to 61 mJ-critical for unregulated input surges
PowerPAK 1212-8SH package	Bottom-side exposed drain eliminates thermal via dependency; achieves 1.9 °C/W R_thJC with minimal PCB area
Low Q_gd/Q_g ratio	Q_gd = 4.6 nC of total Q_g = 12 nC-improves hard-switching immunity and reduces Miller-induced shoot-through risk
Body diode t_rr = 25–50 ns	Fast reverse recovery enables synchronous rectification in 500 kHz–1 MHz buck converters without significant ringing

Applications

Notebook DC/DC Converter	Point-of-Load (POL) Regulator
Use Scenario: High-current CPU/GPU core voltage regulation in ultrathin notebooks with strict thermal envelope. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter operating at 500 kHz–1 MHz. Use Value: 6.0 mΩ R_DS(on) and 12 nC Q_g minimize both conduction and switching losses, enabling >94 % efficiency at 20 A load.	Use Scenario: Compact, high-efficiency 3.3 V or 1.2 V supply for FPGA, ASIC, or memory subsystems on dense PCBs. IC Role / Device Role / Timing Role: Low-side synchronous FET in buck converter where fast body diode recovery reduces dead-time losses. Use Value: 25–50 ns t_rr and 17–35 nC Q_rr suppress voltage spikes and reduce EMI during light-load discontinuous conduction mode.
Industrial DC/DC Module	Telecom Intermediate Bus Converter
Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC/DC modules in programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Primary switching FET in high-reliability, thermally constrained industrial power supplies. Use Value: 100 % UIS tested and -55 to +150 °C operating range ensure robustness under repetitive overload and wide ambient conditions.	Use Scenario: 48 V intermediate bus conversion to 12 V for board-level distribution in telecom base station equipment. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch in high-density quarter-brick or half-brick modules. Use Value: 35 A continuous rating at T_C = 25 °C and 1.9 °C/W R_thJC support >30 W dissipation with minimal thermal interface layers.

Notebook DC/DC Converter

Point-of-Load (POL) Regulator

Use Scenario: High-current CPU/GPU core voltage regulation in ultrathin notebooks with strict thermal envelope.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter operating at 500 kHz–1 MHz.

Use Value: 6.0 mΩ R_DS(on) and 12 nC Q_g minimize both conduction and switching losses, enabling >94 % efficiency at 20 A load.

Use Scenario: Compact, high-efficiency 3.3 V or 1.2 V supply for FPGA, ASIC, or memory subsystems on dense PCBs.

IC Role / Device Role / Timing Role: Low-side synchronous FET in buck converter where fast body diode recovery reduces dead-time losses.

Use Value: 25–50 ns t_rr and 17–35 nC Q_rr suppress voltage spikes and reduce EMI during light-load discontinuous conduction mode.

Industrial DC/DC Module

Telecom Intermediate Bus Converter

Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC/DC modules in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Primary switching FET in high-reliability, thermally constrained industrial power supplies.

Use Value: 100 % UIS tested and -55 to +150 °C operating range ensure robustness under repetitive overload and wide ambient conditions.

Use Scenario: 48 V intermediate bus conversion to 12 V for board-level distribution in telecom base station equipment.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch in high-density quarter-brick or half-brick modules.

Use Value: 35 A continuous rating at T_C = 25 °C and 1.9 °C/W R_thJC support >30 W dissipation with minimal thermal interface layers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR466DP-T1-GE3	R_DS(on) = 4.5 mΩ @ 10 V, Q_g = 22 nC, same PowerPAK 1212-8SH package	Higher conduction efficiency but higher gate drive loss; better for <500 kHz, high-current fixed-frequency designs	Select when lowest R_DS(on) dominates over switching loss; verify driver capability for 22 nC Q_g
IRLHS6342TRPBF	R_DS(on) = 7.5 mΩ @ 4.5 V, Q_g = 10.5 nC, PowerPAK SC-70-6 package (smaller, lower current)	Lower current rating (12 A) and smaller footprint-suitable only for sub-10 A POL or bias rails	Choose only for space-constrained, low-current auxiliary rails; not a functional replacement for main power stage

Compared with SiR466DP-T1-GE3 and IRLHS6342TRPBF, the SISH402DN-T1-GE3 delivers optimal balance of low R_DS(on), moderate Q_g, and 35 A current capability in the PowerPAK 1212-8SH form factor-making it the preferred choice for 10–25 A POL and notebook VRMs where thermal density and 4.5 V drive compatibility are prioritized.

Availability

SISH402DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook DC/DC converters, point-of-load (POL) regulators, and industrial DC/DC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SISH402DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SISH402DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® 1212-8SH product line, engineered specifically for high-current, high-frequency DC/DC conversion in space- and thermally-constrained applications such as portable computing and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for SISH402DN-T1-GE3 at 70 °C case temperature?

The SISH402DN-T1-GE3 supports 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal constraints while maintaining TJ ≤ 150 °C, and is validated under steady-state conditions with adequate PCB copper thermal mass.

Does SISH402DN-T1-GE3 require a gate resistor for stable operation in a 1 MHz buck converter?

Yes, the SISH402DN-T1-GE3 benefits from an external gate resistor (typically 1–5 Ω) to dampen ringing and control dV/dt during switching. Its measured gate resistance is 1.2–2.4 Ω, and the datasheet recommends Rg = 1 Ω in timing characterization-confirming that external series resistance improves noise immunity and prevents unintended turn-on in high-speed layouts.

Can SISH402DN-T1-GE3 be used as a low-side switch with 3.3 V GPIO drive?

No-SISH402DN-T1-GE3 has a gate threshold voltage range of 1.15–2.2 V, but its R_DS(on) is only guaranteed at V_GS ≥ 4.5 V (8.0 mΩ max). At 3.3 V, R_DS(on) rises significantly (>20 mΩ), increasing conduction loss. It is not characterized or recommended for 3.3 V logic-level drive.

What is the thermal resistance from junction to ambient (R_thJA) for SISH402DN-T1-GE3 on a standard 1" × 1" FR4 board?

Per the datasheet note b, the SISH402DN-T1-GE3 exhibits R_thJA = 24 °C/W typical and 33 °C/W maximum on a 1" × 1" FR4 board with 1 oz copper. This value assumes standard JEDEC test conditions and is used for initial thermal estimation-not for high-power designs where junction-to-case (R_thJC = 1.9 °C/W) should guide heatsinking strategy.

Is the PowerPAK 1212-8SH package of SISH402DN-T1-GE3 lead (Pb)-free and halogen-free?

Yes-the ordering code "-T1-GE3" explicitly denotes lead (Pb)-free and halogen-free construction per Vishay's material compliance standards. This is confirmed in the Ordering Information section and aligns with JEDEC J-STD-609A Class 3 moisture sensitivity and RoHS/REACH requirements.

SISH402DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH402DN-T1-GE3 FAQ

1.How can I place an order for SISH402DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH402DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH402DN-T1-GE3 reliable?

The price and inventory of SISH402DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH402DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH402DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH402DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH402DN-T1-GE3?

SISH402DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH402DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH402DN-T1-GE3?

For technical support, including SISH402DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH402DN-T1-GE3 requirements.

6.How does Aetrix verify that SISH402DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH402DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH402DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH402DN-T1-GE3?

All SISH402DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH402DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH402DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH402DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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