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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH410DN-T1-GE3

Name: SISH410DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH410DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISH410DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH410DN-T1-GE3.pdf

Description:: MOSFET N-CH 20V 22A/35A PPAK

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Product details

Overview

SISH410DN-T1-GE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® power MOSFET in PowerPAK® 1212-8SH package, delivering R_DS(on) = 4.8 mΩ at V_GS = 10 V and 6.3 mΩ at V_GS = 4.5 V, with 35 A continuous drain current (T_C = 25 °C), optimized for high-efficiency DC/DC conversion in notebook and point-of-load applications.

For engineers reviewing the SISH410DN-T1-GE3 datasheet, SISH410DN-T1-GE3 pinout, SISH410DN-T1-GE3 application, or SISH410DN-T1-GE3 equivalent, key selection criteria include low gate charge (16.7 nC at 4.5 V), fast switching (t_d(off) ≤ 40 ns), robust avalanche energy rating (61 mJ), and thermal performance (R_thJC = 2.4 °C/W max) in a leadless surface-mount package.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and high current density in a 3.3 mm × 3.3 mm footprint. Its gate threshold voltage (1.2–2.5 V) enables compatibility with 3.3 V and 4.5 V logic-level drive, while the 100 % R_g and UIS tested qualification ensures robustness in hard-switching and transient overload conditions.

The PowerPAK 1212-8SH package features exposed copper drain pads on the bottom side for enhanced thermal conduction and reduced junction-to-case resistance. Its leadless construction supports high-density PCB layouts but requires reflow-only assembly per JEDEC J-STD-020 profile - manual soldering is not recommended.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for low-voltage synchronous rectification and POL switch applications
R_DS(on) @ 10 V	4.8 mΩ max - Enables <1 W conduction loss at 20 A, critical for thermally constrained notebook designs
R_DS(on) @ 4.5 V	6.3 mΩ max - Supports direct drive from 5 V microcontrollers or PWM controllers without level-shifting
Q_g typ.	16.7 nC - Reduces gate drive power and switching losses in high-frequency (>500 kHz) DC/DC converters
I_D cont. (T_C)	35 A - Sustains high pulsed load currents in CPU/GPU VRMs when mounted on heatsinked PCB areas
E_AS	61 mJ - Withstands repetitive inductive switching stress in buck converter freewheeling paths
R_thJC	2.4 °C/W max - Allows efficient heat transfer to PCB copper planes or external heatsinks in compact form factors

Pinout & Package

PowerPAK® 1212-8SH is a leadless, surface-mount package with 8 terminals arranged in a 2×4 grid on a 3.3 mm × 3.3 mm body (0.9 mm height). The bottom-side exposed drain pad provides primary thermal path; top-side terminals are solderable for signal and source connections.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Parallel source connection points - reduce source inductance and improve current sharing in paralleled configurations
5, 6, 7, 8	Drain (D)	Exposed copper drain terminals on bottom side - primary thermal interface and high-current return path to ground plane
G (top-center)	Gate (G)	Single gate input terminal - low R_g (1.3–2.6 Ω) minimizes ringing and enables clean turn-on/turn-off with standard gate drivers

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers industry-leading R_DS(on) × Q_g figure of merit (≈32 mΩ·nC) for high-frequency efficiency
100 % R_g and UIS tested	Guarantees gate robustness and unclamped inductive switching survival across full production lot
PowerPAK 1212-8SH package	Enables >50 % smaller footprint vs. SO-8 while improving thermal resistance by 40 % (R_thJA = 33 °C/W max)
Low V_GS(th) range	1.2–2.5 V threshold supports reliable enhancement-mode operation with 3.3 V logic and avoids false turn-on during power sequencing
Body diode t_rr	30–45 ns reverse recovery time - reduces shoot-through risk and EMI in synchronous buck topologies

Applications

Notebook DC/DC Converter	Point-of-Load (POL) Regulator
Use Scenario: High-current, space-constrained voltage regulation for CPU/GPU core supplies in ultrathin notebooks. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage, operating at 300–1000 kHz switching frequency. Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 25 A load while maintaining case temperature <85 °C.	Use Scenario: Distributed power delivery to FPGAs, ASICs, and memory modules on server and telecom boards. IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase POL converters with digital PWM controllers. Use Value: Fast turn-off delay (≤40 ns) and low Crss (200 pF) support precise phase alignment and reduce cross-conduction losses in multi-phase interleaving.
USB-C PD Power Delivery	Industrial Motor Control Driver
Use Scenario: Secondary-side synchronous rectification in 20 V USB-C PD adapters and portable chargers. IC Role / Device Role / Timing Role: Low-side switch in active clamp flyback or forward converter secondary circuits. Use Value: 20 V V_DS rating matches USB-C PD 5 V/9 V/15 V/20 V profiles; 61 mJ E_AS withstands output short-circuit transients without failure.	Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver IC auxiliary power stage or sensor interface supply. IC Role / Device Role / Timing Role: High-efficiency 20 V rail generator feeding isolated gate drivers or analog front-ends. Use Value: R_DS(on) stability over -55 to +150 °C ensures consistent regulation across industrial ambient ranges; Pb-free/halogen-free compliance meets RoHS/REACH requirements.

Notebook DC/DC Converter

Point-of-Load (POL) Regulator

Use Scenario: High-current, space-constrained voltage regulation for CPU/GPU core supplies in ultrathin notebooks.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage, operating at 300–1000 kHz switching frequency.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 25 A load while maintaining case temperature <85 °C.

Use Scenario: Distributed power delivery to FPGAs, ASICs, and memory modules on server and telecom boards.

IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase POL converters with digital PWM controllers.

Use Value: Fast turn-off delay (≤40 ns) and low Crss (200 pF) support precise phase alignment and reduce cross-conduction losses in multi-phase interleaving.

USB-C PD Power Delivery

Industrial Motor Control Driver

Use Scenario: Secondary-side synchronous rectification in 20 V USB-C PD adapters and portable chargers.

IC Role / Device Role / Timing Role: Low-side switch in active clamp flyback or forward converter secondary circuits.

Use Value: 20 V V_DS rating matches USB-C PD 5 V/9 V/15 V/20 V profiles; 61 mJ E_AS withstands output short-circuit transients without failure.

Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver IC auxiliary power stage or sensor interface supply.

IC Role / Device Role / Timing Role: High-efficiency 20 V rail generator feeding isolated gate drivers or analog front-ends.

Use Value: R_DS(on) stability over -55 to +150 °C ensures consistent regulation across industrial ambient ranges; Pb-free/halogen-free compliance meets RoHS/REACH requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR466DP-T1-GE3	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 18.5 nC; same PowerPAK 1212-8SH package	Marginally higher conduction loss but identical layout compatibility and thermal footprint	Select when slightly higher R_DS(on) is acceptable for cost-sensitive volume production
IRLHS6342TRPBF	R_DS(on) = 5.8 mΩ @ 4.5 V; Q_g = 15.5 nC; PowerSO-10 package (larger, leads)	Requires PCB layout change; better manufacturability for hand-soldered prototypes but lower power density	Prefer for evaluation or low-volume industrial designs where leaded packages simplify assembly and test

Compared with SiR466DP-T1-GE3 and IRLHS6342TRPBF, the SISH410DN-T1-GE3 offers the lowest R_DS(on) at both 4.5 V and 10 V drive, making it optimal for thermally constrained, high-efficiency POL and notebook applications where minimal voltage drop and die temperature rise are critical.

Availability

SISH410DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook DC/DC converters, point-of-load regulators, and USB-C PD power delivery systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SISH410DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The PowerPAK 1212-8SH MOSFET product line targets high-density, thermally demanding power conversion applications including mobile computing, data center POL, and USB-C infrastructure - designed to replace larger SO-8 and DPAK devices without sacrificing ruggedness or performance.

FAQ

What is the maximum continuous drain current rating for SISH410DN-T1-GE3 at 70 °C case temperature?

The SISH410DN-T1-GE3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias to maintain case temperature; derating applies above 70 °C per the current derating curve in the datasheet.

Does SISH410DN-T1-GE3 require a gate driver IC for operation at 1 MHz switching frequency?

Yes - while the SISH410DN-T1-GE3 has low Q_g (16.7 nC), driving it directly from a microcontroller GPIO at 1 MHz risks insufficient slew rate and excessive gate dissipation. A dedicated gate driver (e.g., TC4427 or LM5113) is recommended to ensure clean 10–20 ns edge transitions and minimize switching losses in high-frequency DC/DC designs using SISH410DN-T1-GE3.

Is SISH410DN-T1-GE3 suitable for synchronous rectification in a 20 V USB-C PD adapter?

Yes - the SISH410DN-T1-GE3 is rated for V_DS = 20 V and features low R_DS(on) (6.3 mΩ @ 4.5 V), fast body diode recovery (t_rr = 30–45 ns), and 61 mJ avalanche energy, making it well-suited for secondary-side synchronous rectification in 20 V USB-C PD flyback or active clamp forward converters where SISH410DN-T1-GE3 replaces Schottky diodes to improve efficiency by 2–3 %.

What is the thermal resistance from junction to ambient (R_thJA) for SISH410DN-T1-GE3 on a standard 1" × 1" FR4 board?

Per the datasheet note b, the SISH410DN-T1-GE3 exhibits R_thJA = 33 °C/W maximum when mounted on a 1" × 1" FR4 board with 1 oz copper. This value assumes no additional heatsinking; actual R_thJA improves significantly with internal copper planes, thermal vias, or external heatsinks - critical for sustaining full 35 A current in compact SISH410DN-T1-GE3 implementations.

Can SISH410DN-T1-GE3 be used in parallel configurations, and what layout considerations apply?

Yes - the SISH410DN-T1-GE3 supports paralleling due to its positive temperature coefficient of R_DS(on) and four dedicated source terminals. To ensure balanced current sharing, use symmetrical PCB traces, identical gate drive paths with local 10 Ω gate resistors, and shared thermal copper area. Avoid asymmetry in source loop inductance, as this can cause dynamic current imbalance during SISH410DN-T1-GE3 switching transitions.

SISH410DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH410DN-T1-GE3 FAQ

1.How can I place an order for SISH410DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH410DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH410DN-T1-GE3 reliable?

The price and inventory of SISH410DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH410DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH410DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH410DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH410DN-T1-GE3?

SISH410DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH410DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH410DN-T1-GE3?

For technical support, including SISH410DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH410DN-T1-GE3 requirements.

6.How does Aetrix verify that SISH410DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH410DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH410DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH410DN-T1-GE3?

All SISH410DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH410DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH410DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH410DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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