Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH434DN-T1-GE3

Name: SISH434DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH434DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SISH434DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH434DN-T1-GE3.pdf

Description:: MOSFET N-CH 40V 17.6A/35A PPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,970

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SISH434DN-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® power MOSFET in PowerPAK® 1212-8SH package, delivering R_DS(on) = 7.6 mΩ at V_GS = 10 V and 9.2 mΩ at V_GS = 4.5 V, with 35 A continuous drain current (T_C = 25 °C), optimized for point-of-load (POL) DC-DC converters.

For engineers reviewing the SISH434DN-T1-GE3 datasheet, SISH434DN-T1-GE3 pinout, SISH434DN-T1-GE3 application, or SISH434DN-T1-GE3 equivalent, this device supports high-efficiency synchronous buck stages requiring low gate charge (Q_g = 12.5 nC typ. at 4.5 V), robust avalanche energy rating (E_AS = 45 mJ), and thermally efficient leadless packaging.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) enables compatibility with 3.3 V and 5 V gate drivers, while its C_iss = 1530 pF and C_rss = 100 pF support stable operation in high-frequency POL topologies.

The PowerPAK 1212-8SH package features exposed copper drain pads on the bottom side for enhanced thermal conduction, with R_thJC = 1.9 °C/W (typ.) and R_thJA = 24 °C/W (t ≤ 10 s). The device is 100 % R_g and UIS tested per production screening.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage suitable for 12 V and 24 V input POL systems.
R_DS(on) @ V_GS = 10 V	7.6 mΩ max - Enables <1 W conduction loss at 35 A, critical for high-current output rails.
R_DS(on) @ V_GS = 4.5 V	9.2 mΩ max - Ensures low-loss operation with standard logic-level gate drivers.
Q_g	12.5 nC typ. @ 4.5 V - Reduces gate drive power and switching transition time in 500 kHz–1 MHz converters.
I_D (continuous)	35 A @ T_C = 25 °C - Supports high-current single-phase or paralleled multi-phase POL designs.
E_AS	45 mJ - Withstands repetitive inductive switching stress without degradation in synchronous rectifier applications.
R_thJC	1.9 °C/W typ. - Allows direct thermal coupling to PCB copper or heatsink for junction temperature control below 150 °C.

Pinout & Package

PowerPAK® 1212-8SH is a leadless, surface-mount package measuring 3.3 mm × 3.3 mm × 0.9 mm, with exposed drain terminals on the bottom side for thermal and electrical performance. Top-side terminals are arranged in an 8-pin configuration with dual-source and dual-drain groupings.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to internal die drains and provide low-inductance path to PCB ground plane.
G (center pad, underside)	Gate (G)	Single gate terminal located centrally on top surface; requires controlled trace routing to minimize ringing.

Key Features

Feature	Design Value
TrenchFET® technology	Enables ultra-low R_DS(on) and high cell density in compact 3.3 mm × 3.3 mm footprint.
100 % R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching events in real-world POL loads.
PowerPAK 1212-8SH package	Provides 3× lower R_thJA vs. SO-8 and eliminates lead inductance for improved EMI and dV/dt immunity.
Body diode t_rr = 30–45 ns	Minimizes reverse recovery losses during synchronous rectification, supporting >95 % efficiency at 1 MHz.
V_GS(th) = 1.2–2.2 V	Guarantees turn-on with standard 3.3 V microcontroller GPIO or PWM controller outputs without level shifting.

Applications

Server VRMs	Industrial PLC I/O Modules
Use Scenario: High-current, multi-phase buck converters supplying core voltage to Xeon or EPYC CPUs. IC Role / Device Role / Timing Role: Synchronous high-side or low-side switch in 500 kHz–1 MHz VRM stages. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >90 % efficiency at 100 A output.	Use Scenario: Isolated 24 V DC-DC supplies powering digital I/O, analog sensors, and communication interfaces in harsh environments. IC Role / Device Role / Timing Role: Primary-side switch in compact flyback or active-clamp forward converters. Use Value: Avalanche-rated construction withstands inductive kickback from solenoid/relay loads during fault conditions.
Telecom Baseband Units	Automotive ADAS ECUs
Use Scenario: Point-of-load regulation for FPGAs, ADCs, and RF transceivers in 5G macro/micro base stations. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck regulators with tight thermal constraints. Use Value: PowerPAK 1212-8SH's low R_thJC allows direct mounting to thermal vias, maintaining T_J < 125 °C at full load.	Use Scenario: Power management for camera modules, radar processors, and sensor fusion units in Level 2+ ADAS systems. IC Role / Device Role / Timing Role: Secondary-side switch in isolated DC-DC converters meeting AEC-Q101 stress requirements. Use Value: -55 °C to +150 °C operating range and 100 % UIS testing ensure reliability under automotive thermal cycling and load dump transients.

Server VRMs

Industrial PLC I/O Modules

Use Scenario: High-current, multi-phase buck converters supplying core voltage to Xeon or EPYC CPUs.

IC Role / Device Role / Timing Role: Synchronous high-side or low-side switch in 500 kHz–1 MHz VRM stages.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >90 % efficiency at 100 A output.

Use Scenario: Isolated 24 V DC-DC supplies powering digital I/O, analog sensors, and communication interfaces in harsh environments.

IC Role / Device Role / Timing Role: Primary-side switch in compact flyback or active-clamp forward converters.

Use Value: Avalanche-rated construction withstands inductive kickback from solenoid/relay loads during fault conditions.

Telecom Baseband Units

Automotive ADAS ECUs

Use Scenario: Point-of-load regulation for FPGAs, ADCs, and RF transceivers in 5G macro/micro base stations.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck regulators with tight thermal constraints.

Use Value: PowerPAK 1212-8SH's low R_thJC allows direct mounting to thermal vias, maintaining T_J < 125 °C at full load.

Use Scenario: Power management for camera modules, radar processors, and sensor fusion units in Level 2+ ADAS systems.

IC Role / Device Role / Timing Role: Secondary-side switch in isolated DC-DC converters meeting AEC-Q101 stress requirements.

Use Value: -55 °C to +150 °C operating range and 100 % UIS testing ensure reliability under automotive thermal cycling and load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 8.5 mΩ @ 4.5 V; Q_g = 14.5 nC; PowerPAK™ SO-8 package (3.3 mm × 3.3 mm but thicker, 1.05 mm).	Higher gate charge increases driver loss; same footprint but higher R_thJA (35 °C/W) limits power density.	Prefer SISH434DN-T1-GE3 where board space and thermal performance are constrained.
DMTH4007LPSQ-13	R_DS(on) = 7.0 mΩ @ 4.5 V; Q_g = 13.2 nC; PowerDI™ 5060-8 package (5.0 mm × 6.0 mm, larger area).	Larger footprint reduces layout flexibility; higher C_iss (1700 pF) may increase EMI filtering burden.	Choose SISH434DN-T1-GE3 when minimizing PCB area and optimizing high-frequency efficiency are priorities.

Compared with IRLHS6342TRPBF and DMTH4007LPSQ-13, the SISH434DN-T1-GE3 delivers superior thermal resistance (R_thJC = 1.9 °C/W), tighter V_GS(th) distribution (1.2–2.2 V), and lower Q_g at 4.5 V-making it optimal for space-constrained, high-efficiency POL designs demanding consistent turn-on behavior across temperature.

Availability

SISH434DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC I/O modules, and telecom baseband units requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned reliability validation.

Supply support for SISH434DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SISH434DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® portfolio, engineered specifically for high-current, high-frequency point-of-load conversion in datacenter, industrial, and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for SISH434DN-T1-GE3 at 70 °C case temperature?

The SISH434DN-T1-GE3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal constraints while maintaining safe junction temperature below 150 °C, and applies under steady-state conduction with adequate heatsinking.

Does SISH434DN-T1-GE3 support 3.3 V gate drive in practical applications?

Yes, the SISH434DN-T1-GE3 has a guaranteed V_GS(th) range of 1.2–2.2 V and R_DS(on) = 9.2 mΩ max at V_GS = 4.5 V, making it fully compatible with 3.3 V logic-level gate drivers. Real-world validation shows reliable turn-on with 3.3 V PWM controllers in 1 MHz POL converters.

What is the thermal resistance from junction to case (R_thJC) for SISH434DN-T1-GE3?

The SISH434DN-T1-GE3 has a typical junction-to-case thermal resistance of 1.9 °C/W and a maximum of 2.4 °C/W, measured from the silicon die to the exposed drain pad on the bottom of the PowerPAK 1212-8SH package. This value enables direct thermal coupling to PCB copper or external heatsinks.

Is SISH434DN-T1-GE3 qualified for automotive applications?

The SISH434DN-T1-GE3 is not AEC-Q101 qualified, though it operates across -55 °C to +150 °C and is 100 % UIS tested. For automotive ADAS ECUs, Vishay offers AEC-Q101 variants like the SQJQ434EL, which shares identical R_DS(on) and package but adds qualification testing.

How does the PowerPAK 1212-8SH package differ from standard SO-8 in terms of soldering and rework?

The PowerPAK 1212-8SH is a leadless package with exposed copper drain pads; manual soldering with an iron is not recommended due to thermal mass and lack of leads. Rework requires controlled hot-air profiling per Vishay document 73257, and solder fillets at the exposed copper tip are neither guaranteed nor required for functional interconnection.

SISH434DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 17.6A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 16.2A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1530 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH434DN-T1-GE3 FAQ

1.How can I place an order for SISH434DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH434DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH434DN-T1-GE3 reliable?

The price and inventory of SISH434DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH434DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH434DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH434DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH434DN-T1-GE3?

SISH434DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH434DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH434DN-T1-GE3?

For technical support, including SISH434DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH434DN-T1-GE3 requirements.

6.How does Aetrix verify that SISH434DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH434DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH434DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH434DN-T1-GE3?

All SISH434DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH434DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH434DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH434DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …