My Inquiry
My Account
Vishay Siliconix SISHA04DN-T1-GE3
- Part No.:
- SISHA04DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SH
- Datasheet:
-
SISHA04DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 30.9A/40A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,801
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SISHA04DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8SH package, delivering RDS(on) = 2.15 mΩ at VGS = 10 V and 3.10 mΩ at VGS = 4.5 V, with 40 A continuous drain current and 22.5 nC total gate charge - optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SISHA04DN-T1-GE3 datasheet, SISHA04DN-T1-GE3 pinout, SISHA04DN-T1-GE3 application, or SISHA04DN-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, 80 A pulsed drain capability, 100% UIS testing, and thermal resistance RthJC = 1.9 °C/W for high-power-density board-level designs.
Technical Context
This MOSFET employs trench-gate silicon technology with optimized cell pitch and deep-trench doping to achieve ultra-low on-resistance while maintaining robust avalanche ruggedness (EAS = 20 mJ). Its gate charge profile supports fast switching with Qgd/Qg = ~18%, reducing Miller-induced turn-off delay in high-frequency synchronous buck stages.
The device integrates a low-VSD body diode (0.73 V typ. at 5 A) with trr = 36 ns and Qrr = 24 nC, enabling efficient reverse recovery in hard-switched topologies. Thermal design leverages the exposed-drain PowerPAK 1212-8SH package, where the bottom-side copper pad serves as the primary heat path to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC systems |
| RDS(on) @ 10 V | 2.15 mΩ - Enables <1.5 W conduction loss at 40 A in VRM/POL applications |
| RDS(on) @ 4.5 V | 3.10 mΩ - Ensures stable on-state performance with 5 V gate drivers and logic-level control |
| Qg @ 4.5 V | 22.5 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver power demand |
| ID (continuous) | 40 A @ TC = 25 °C - Rated for high-current output stages without external heatsink under controlled case temp |
| RthJC | 1.9 °C/W - Enables direct thermal coupling to inner-layer copper or thermal vias for >40 W dissipation |
| VGS(th) | 1.1–2.2 V - Low threshold ensures reliable turn-on with standard microcontroller GPIOs |
Pinout & Package
PowerPAK® 1212-8SH is a leadless, surface-mount package with an exposed drain paddle on the bottom side. Dimensions: 3.3 mm × 3.3 mm × 0.9 mm. The top-side terminals are arranged in two rows of four pins; Pin 1 is marked by a dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source connections reduce source inductance and improve current sharing in high-di/dt operation |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals tied to internal exposed copper paddle - primary thermal and power return path |
| G (top center) | Gate (G) | Single gate terminal located centrally between source and drain rows for balanced drive and minimized loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 20% lower RDS(on) vs. prior generation at same die size, improving power density in space-constrained POL modules |
| 100% Rg and UIS tested | Ensures gate resistance consistency for predictable switching timing and validated avalanche energy handling (20 mJ) |
| Low Qgd/Qg ratio | ~7.5% (4 nC / 51 nC typ.) - minimizes Miller plateau duration and improves controllability during hard switching |
| Exposed-drain thermal design | Enables junction-to-board thermal resistance as low as 1.9 °C/W when mounted on ≥1 in² 2-oz copper with 8+ thermal vias |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709C, suitable for automotive and industrial end-equipment |
Applications
| Server VRM Output Stage | Telecom Brick Secondary Side |
|---|---|
Use Scenario: High-current, high-efficiency synchronous rectification in 48 V–12 V isolated DC/DC converters delivering up to 120 A per phase. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET driven by dedicated gate controller with adaptive dead-time control. Use Value: 3.10 mΩ RDS(on) at 4.5 V enables >95% efficiency at full load with minimal thermal derating on standard 4-layer PCBs. | Use Scenario: Point-of-load (POL) converter in telecom infrastructure equipment requiring compact 12 V or 5 V outputs with fast transient response. IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck regulators operating at 500 kHz–1 MHz. Use Value: 22.5 nC Qg at 4.5 V reduces gate driver losses and allows use of cost-effective dual-MOSFET drivers without external boost circuitry. |
| Laptop CPU Voltage Regulator | Industrial PLC Power Module |
Use Scenario: Core voltage regulation for modern x86 and ARM processors, where tight voltage tolerance and dynamic load steps demand low RDS(on) and fast switching. IC Role / Device Role / Timing Role: Bottom-FET in interleaved 2-phase or 3-phase buck converter with integrated controller. Use Value: 1.1–2.2 V VGS(th) ensures clean turn-on with 3.3 V logic-level gate signals, eliminating need for level-shifting circuitry. | Use Scenario: Redundant 24 V power distribution in programmable logic controllers, where reliability under surge and thermal stress is critical. IC Role / Device Role / Timing Role: Primary switching element in isolated flyback or forward converter secondary synchronous rectifier stage. Use Value: 100% UIS tested and 20 mJ EAS rating provide margin against inductive kickback during fault conditions in harsh industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 2.3 mΩ @ 4.5 V; Qg = 25 nC; SO-8 package with higher RthJA (50 °C/W) | Lower current rating (30 A), less suited for >50 A multi-phase VRMs due to thermal limits | Preferred for cost-sensitive, lower-power applications where SO-8 footprint compatibility is required |
| DMTH3004LPSQ-13 | RDS(on) = 2.7 mΩ @ 4.5 V; Qg = 20.5 nC; PowerDI 3333 package with RthJC = 2.2 °C/W | Slightly higher RDS(on) but AEC-Q101 qualified for automotive-grade reliability | Recommended for industrial or transportation applications requiring extended temperature and qualification compliance |
Compared with IRLHS6342TRPBF and DMTH3004LPSQ-13, the SISHA04DN-T1-GE3 offers the lowest RDS(on) at 4.5 V and best thermal performance in its class, making it optimal for high-current, high-efficiency server and telecom power stages where board area and thermal headroom are constrained.
Availability
SISHA04DN-T1-GE3 is available at Aetrix Electronics and suitable for switch mode power supplies, telecom bricks, and VRM/POL applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for SISHA04DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SISHA04DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in datacenter, telecom, and computing infrastructure.
FAQ
What is the maximum continuous drain current rating for SISHA04DN-T1-GE3 at 70 °C case temperature?
The SISHA04DN-T1-GE3 supports 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 40 A value at 25 °C case temperature and is validated under steady-state thermal conditions with adequate PCB copper and thermal vias.
Does SISHA04DN-T1-GE3 have a guaranteed avalanche rating, and what is its single-pulse value?
Yes, the SISHA04DN-T1-GE3 is 100% tested for Unclamped Inductive Switching (UIS) and has a guaranteed single-pulse avalanche energy rating of 20 mJ with L = 0.1 mH, as documented in the Absolute Maximum Ratings section. This ensures robustness against inductive transients in synchronous rectifier and motor drive applications.
What is the gate-source threshold voltage range for SISHA04DN-T1-GE3, and how does it affect logic-level drive compatibility?
The gate-source threshold voltage (VGS(th)) for SISHA04DN-T1-GE3 is specified from 1.1 V to 2.2 V at ID = 250 μA. This low and tightly bounded range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers, eliminating the need for gate voltage boosting in most digital-control POL designs.
How does the PowerPAK 1212-8SH package of SISHA04DN-T1-GE3 improve thermal performance compared to SO-8?
The PowerPAK 1212-8SH package of SISHA04DN-T1-GE3 achieves RthJC = 1.9 °C/W, significantly lower than typical SO-8 MOSFETs (~3–4 °C/W), due to its exposed-drain copper paddle directly soldered to PCB thermal pads. This enables higher power dissipation in compact footprints without external heatsinks.
Is SISHA04DN-T1-GE3 suitable for synchronous rectification in 48 V to 12 V isolated DC/DC converters?
Yes, the SISHA04DN-T1-GE3 is explicitly designed for this role: its 30 V VDS, 3.10 mΩ RDS(on) at 4.5 V, low Qg, and fast body diode (trr = 36 ns) make it ideal for secondary-side synchronous rectification in telecom bricks and server VRMs, where efficiency above 95% and thermal density are critical.
SISHA04DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8SH
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30.9A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.15mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3595 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8SH
SISHA04DN-T1-GE3 FAQ
1.How can I place an order for SISHA04DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISHA04DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISHA04DN-T1-GE3 reliable?
The price and inventory of SISHA04DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISHA04DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISHA04DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISHA04DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISHA04DN-T1-GE3?
SISHA04DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISHA04DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISHA04DN-T1-GE3?
For technical support, including SISHA04DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISHA04DN-T1-GE3 requirements.
6.How does Aetrix verify that SISHA04DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISHA04DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISHA04DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISHA04DN-T1-GE3?
All SISHA04DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISHA04DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISHA04DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISHA04DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SISHA04DN-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
