My Inquiry
My Account
Vishay Siliconix SISHA06DN-T1-GE3
- Part No.:
- SISHA06DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SH
- Datasheet:
-
SISHA06DN-T1-GE3.pdf
- Description:
- N-CHANNEL 30 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:11,905
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SISHA06DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8SH package, delivering RDS(on) = 3.0 mΩ at VGS = 10 V and 4.0 mΩ at VGS = 4.5 V, with 104 A continuous drain current at TC = 25 °C, optimized for high-efficiency synchronous rectification in VRMs and compact DC/DC converters.
For engineers reviewing the SISHA06DN-T1-GE3 datasheet, SISHA06DN-T1-GE3 pinout, SISHA06DN-T1-GE3 application, or SISHA06DN-T1-GE3 equivalent, key selection criteria include low gate charge (Qg = 19.7 nC @ 4.5 V), robust avalanche rating (EAS = 45 mJ), and thermal performance (RthJC = 1.9 °C/W) in leadless surface-mount packaging.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and fast switching dynamics. Its 8-pin PowerPAK 1212-8SH package integrates four parallel source terminals and three parallel drain terminals to minimize package inductance and improve current sharing under high di/dt conditions.
The device features a gate threshold voltage (VGS(th)) of 1–2.4 V and is 100 % Rg and UIS tested per production lot. Body diode characteristics include VSD = 0.74 V (typ.) at IS = 10 A and trr = 33 ns (typ.), supporting efficient reverse recovery in synchronous buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input bus and 12 V output VRM stages |
| RDS(on) @ 10 V | 3.0 mΩ - Enables <1.5 W conduction loss at 40 A, critical for >95 % efficiency in high-current point-of-load converters |
| RDS(on) @ 4.5 V | 4.0 mΩ - Ensures stable operation with 5 V gate drive from standard PWM controllers without level-shifting |
| Qg @ 4.5 V | 19.7 nC - Reduces gate drive power and enables >1 MHz switching in digitally controlled DC/DC designs |
| ID (continuous) | 104 A @ TC = 25 °C - Supports high-current single-phase VRM outputs up to 100 A with margin |
| EAS | 45 mJ - Withstands repetitive inductive switching stress in hard-switched synchronous rectifiers |
| RthJC | 1.9 °C/W - Allows direct thermal coupling to PCB copper or heatsink for high-power density thermal management |
Pinout & Package
PowerPAK® 1212-8SH is a leadless, bottom-terminated surface-mount package measuring 3.3 mm × 3.3 mm × 0.9 mm, with exposed copper drain paddle on the bottom side for enhanced thermal conduction and mechanical anchoring.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four independent source terminals reduce source inductance and improve current distribution across internal die connections |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals minimize loop inductance in high-di/dt switching paths and support symmetric PCB layout |
| G (top-side pad) | Gate (G) | Single top-side gate pad enables standard reflow-compatible routing; requires controlled impedance trace for EMI-sensitive applications |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon process | Delivers 25 % lower RDS(on) × Qg figure-of-merit vs. prior generation, enabling higher frequency operation without efficiency penalty |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (<0.2–1.2 Ω) and single-pulse avalanche reliability across all units-critical for mission-critical power stages |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 2a (MSL 2a) for standard SMT assembly |
| PowerPAK 1212-8SH package | Provides 3× lower thermal resistance than SO-8 and eliminates wirebond inductance, improving EMI profile and transient response |
| Body diode trr = 33 ns (typ.) | Reduces reverse recovery losses and associated voltage spikes during dead-time transitions in synchronous rectification |
Applications
| Server VRM Output Stage | High-Density Telecom DC/DC Converter |
|---|---|
Use Scenario: Final-stage 12 V to 0.8–1.8 V conversion in dual-processor server motherboards with >300 A total load. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter, switching at 500 kHz–1 MHz with interleaved control. Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >94 % efficiency at 60 A per phase while maintaining <70 °C case temperature. |
Use Scenario: 48 V to 12 V intermediate bus converter in 1 RU telecom equipment with strict airflow and board area constraints. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier in LLC resonant topology. Use Value: 30 V rating and 4.0 mΩ RDS(on) at 4.5 V gate drive allow direct use with 5 V controller outputs, eliminating gate driver ICs and saving 12 mm² PCB area per device. |
| GPU Power Delivery Module | Industrial PLC Power Supply |
Use Scenario: Dynamic voltage scaling for discrete GPU cards requiring rapid load transients up to 200 A peak within 1 μs. IC Role / Device Role / Timing Role: Low-side switch in multi-phase buck converter with digital PWM control and real-time current sensing. Use Value: Fast turn-on delay (12 ns @ 10 V) and rise time (6 ns) enable precise dead-time control, minimizing shoot-through risk during aggressive dv/dt events. |
Use Scenario: 24 V input to 5 V/3.3 V auxiliary supply in programmable logic controller with extended operating temperature range (-40 to +85 °C). IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or forward converter with integrated transformer winding. Use Value: -55 to +150 °C junction temperature rating and stable RDS(on) over temperature ensure reliable operation without derating in sealed industrial enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7004TRPBF | RDS(on) = 3.2 mΩ @ 10 V; Qg = 22.5 nC; PowerSO-8 package (larger footprint, higher RthJA) | Higher thermal resistance (RthJA = 40 °C/W) limits power density in compact layouts | Preferred where legacy SO-8 footprint compatibility is required and board space is not constrained |
| DMTH3004LPSQ-13 | RDS(on) = 3.5 mΩ @ 10 V; Qg = 18.5 nC; PowerDI 5060 package (5.0 mm × 6.0 mm); AEC-Q101 qualified | Automotive-qualified but larger size and higher RDS(on) reduce efficiency in high-frequency industrial DC/DC | Selected when automotive qualification or higher surge immunity is mandatory, not for pure industrial efficiency optimization |
Compared with IRFH7004TRPBF and DMTH3004LPSQ-13, the SISHA06DN-T1-GE3 offers the lowest RDS(on) × Qg product in its footprint class, enabling highest power density and efficiency in space-constrained VRM and telecom applications without automotive qualification overhead.
Availability
SISHA06DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power supplies requiring stable component supply, long-term lifecycle assurance, and full traceability.
Supply support for SISHA06DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability validation.
The SISHA06DN-T1-GE3 belongs to Vishay's TrenchFET Gen IV power MOSFET family, engineered specifically for high-efficiency, high-current synchronous rectification in next-generation computing and communications power systems.
FAQ
What is the maximum continuous drain current rating for SISHA06DN-T1-GE3 at 70 °C case temperature?
The SISHA06DN-T1-GE3 supports 83.3 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK 1212-8SH package under sustained high-power operation and must be validated against actual PCB copper area and airflow in the target application. The SISHA06DN-T1-GE3 datasheet provides detailed current derating curves on page 5.
Does SISHA06DN-T1-GE3 have a guaranteed avalanche energy rating?
Yes, the SISHA06DN-T1-GE3 has a guaranteed single-pulse avalanche energy rating of 45 mJ (EAS) with L = 0.1 mH, verified by 100 % UIS testing per production lot. This rating ensures robustness against inductive switching transients in synchronous buck and flyback topologies where the SISHA06DN-T1-GE3 operates as a low-side or high-side switch without external snubbers.
Can SISHA06DN-T1-GE3 be driven directly from a 4.5 V gate driver without level shifting?
Yes, the SISHA06DN-T1-GE3 is fully characterized at VGS = 4.5 V, with RDS(on) = 4.0 mΩ (max) and Qg = 19.7 nC (typ). Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.4 V, ensuring strong enhancement-mode turn-on with standard 4.5 V logic-level drivers used in modern digital PWM controllers. No level shifter is needed for the SISHA06DN-T1-GE3 in such configurations.
What is the thermal resistance from junction to case (RthJC) for SISHA06DN-T1-GE3?
The SISHA06DN-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 1.9 °C/W and a maximum of 2.4 °C/W under steady-state conditions. This low RthJC is enabled by the exposed copper drain paddle in the PowerPAK 1212-8SH package and allows efficient heat transfer to the PCB ground plane or external heatsink-critical for maintaining TJ < 150 °C in high-current SISHA06DN-T1-GE3 applications.
Is SISHA06DN-T1-GE3 suitable for synchronous rectification in LLC resonant converters?
Yes, the SISHA06DN-T1-GE3 is well-suited for secondary-side synchronous rectification in LLC resonant converters due to its low RDS(on), fast body diode recovery (trr = 33 ns typ.), and low Qgd/Qgs ratio (0.24), which improves zero-voltage switching (ZVS) margin. Its 30 V rating matches common 12 V output stages, and the SISHA06DN-T1-GE3's robust UIS capability handles resonant tank ringing without failure.
SISHA06DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8SH
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 28.1A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3932 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8SH
SISHA06DN-T1-GE3 FAQ
1.How can I place an order for SISHA06DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISHA06DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISHA06DN-T1-GE3 reliable?
The price and inventory of SISHA06DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISHA06DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISHA06DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISHA06DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISHA06DN-T1-GE3?
SISHA06DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISHA06DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISHA06DN-T1-GE3?
For technical support, including SISHA06DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISHA06DN-T1-GE3 requirements.
6.How does Aetrix verify that SISHA06DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISHA06DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISHA06DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISHA06DN-T1-GE3?
All SISHA06DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISHA06DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISHA06DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISHA06DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SISHA06DN-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
