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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISHA10DN-T1-GE3

Name: SISHA10DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISHA10DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISHA10DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISHA10DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 25A/30A PPAK

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Product details

Overview

SISHA10DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8SH package, delivering R_DS(on) = 3.7 mΩ at V_GS = 10 V and 5.0 mΩ at V_GS = 4.5 V, with 30 A continuous drain current (T_J = 150 °C), optimized for high-efficiency synchronous rectification in compact DC/DC converters.

For engineers reviewing the SISHA10DN-T1-GE3 datasheet, SISHA10DN-T1-GE3 pinout, SISHA10DN-T1-GE3 application, or SISHA10DN-T1-GE3 equivalent, key selection criteria include low gate charge (Q_g = 15.4 nC @ 4.5 V), robust UIS rating, 100 % R_g tested, and thermal performance validated for high-power-density VRMs and embedded DC/DC modules.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance while maintaining fast switching dynamics: t_d(on) = 20 ns and t_f = 10 ns under 4.5 V gate drive, with C_iss = 2425 pF and Crss/Ciss ratio of 0.027–0.054 for reduced Miller effect.

It features a leadless PowerPAK 1212-8SH package with exposed copper drain pads on bottom side, enabling low R_thJC = 2.4 °C/W (typical) and supporting high-current operation up to 30 A at T_C = 25 °C, with body diode t_rr = 31 ns and Q_rr = 19 nC for efficient synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on) @ 10 V	3.7 mΩ max - Enables <1 W conduction loss at 15 A in high-current VRM phases
R_DS(on) @ 4.5 V	5.0 mΩ max - Ensures stable low-loss operation with 5 V logic-level gate drivers
Q_g @ 4.5 V	15.4 nC typ - Reduces gate drive power and enables >1 MHz switching in compact converters
I_D (continuous)	30 A @ T_C = 25 °C - Supports high-current single-phase buck stages without paralleling
R_thJC	2.4 °C/W typical - Allows direct thermal coupling to PCB copper for passive heatsinking
t_rr (body diode)	31 ns typ - Minimizes reverse recovery loss during synchronous FET commutation

Pinout & Package

PowerPAK® 1212-8SH is a surface-mount, leadless, thermally enhanced package measuring 3.3 mm × 3.3 mm × 0.9 mm, with exposed drain copper on the bottom side for low thermal resistance and high-current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Four exposed drain pads on bottom side provide primary thermal path and high-current return path
Top center pad	Gate (G)	Single top-side gate terminal compatible with standard pick-and-place and reflow processes

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 23 % lower R_DS(on) vs. prior generation at same die size, improving power density
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy tolerance (E_AS = 20 mJ)
Low Crss/Ciss ratio (0.027–0.054)	Reduces Miller plateau duration and improves controllability during hard-switching transitions
Exposed drain thermal pad	Enables junction-to-case thermal resistance as low as 2.4 °C/W for PCB-based thermal management
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 2a (MSL 2a)

Applications

Server VRM Phase Legs	High-Density Telecom DC/DC
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A per rail. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved phase-leg topology, switching at 500 kHz–1 MHz. Use Value: 5.0 mΩ R_DS(on) @ 4.5 V enables efficient operation with standard 5 V gate drivers, reducing gate drive complexity and BOM count.	Use Scenario: 48 V to 12 V intermediate bus converter in 1 RU telecom shelf with strict thermal envelope. IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or secondary-side synchronous rectifier in LLC resonant output stage. Use Value: 2.4 °C/W R_thJC allows direct thermal coupling to inner-layer copper, eliminating need for external heatsinks in space-constrained designs.
Industrial PLC Power Modules	Automotive ADAS Domain Controllers
Use Scenario: 24 V input DC/DC for I/O and communication modules requiring high reliability across -40 °C to +105 °C ambient. IC Role / Device Role / Timing Role: Output rectifier in isolated flyback or forward converter powering FPGA and microcontroller rails. Use Value: 100 % UIS tested and -55 °C to +150 °C T_J rating ensure robustness against load dump and inductive kick in industrial environments.	Use Scenario: 12 V to 3.3 V/1.8 V point-of-load conversion in camera ECU or radar processing unit with ASIL-B functional safety requirements. IC Role / Device Role / Timing Role: Secondary-side synchronous FET in compact, shielded buck regulator meeting automotive EMC and thermal constraints. Use Value: Low Q_g (15.4 nC @ 4.5 V) and fast t_f (10 ns) minimize switching loss and EMI generation in noise-sensitive ADAS subsystems.

Server VRM Phase Legs

High-Density Telecom DC/DC

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A per rail.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved phase-leg topology, switching at 500 kHz–1 MHz.

Use Value: 5.0 mΩ R_DS(on) @ 4.5 V enables efficient operation with standard 5 V gate drivers, reducing gate drive complexity and BOM count.

Use Scenario: 48 V to 12 V intermediate bus converter in 1 RU telecom shelf with strict thermal envelope.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or secondary-side synchronous rectifier in LLC resonant output stage.

Use Value: 2.4 °C/W R_thJC allows direct thermal coupling to inner-layer copper, eliminating need for external heatsinks in space-constrained designs.

Industrial PLC Power Modules

Automotive ADAS Domain Controllers

Use Scenario: 24 V input DC/DC for I/O and communication modules requiring high reliability across -40 °C to +105 °C ambient.

IC Role / Device Role / Timing Role: Output rectifier in isolated flyback or forward converter powering FPGA and microcontroller rails.

Use Value: 100 % UIS tested and -55 °C to +150 °C T_J rating ensure robustness against load dump and inductive kick in industrial environments.

Use Scenario: 12 V to 3.3 V/1.8 V point-of-load conversion in camera ECU or radar processing unit with ASIL-B functional safety requirements.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in compact, shielded buck regulator meeting automotive EMC and thermal constraints.

Use Value: Low Q_g (15.4 nC @ 4.5 V) and fast t_f (10 ns) minimize switching loss and EMI generation in noise-sensitive ADAS subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR870DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V; larger PowerPAK 5x6 package; higher Q_g = 22 nC @ 4.5 V	Better thermal margin at high ambient but requires larger PCB area and higher gate drive power	Select when board space permits and thermal headroom is prioritized over switching speed
IRFH8326TRPBF	R_DS(on) = 3.2 mΩ @ 10 V; same 3.3×3.3 mm footprint; Crss/Ciss = 0.045; no 100 % UIS test documented	Marginally lower conduction loss but unverified avalanche ruggedness for high-reliability industrial use	Select for cost-sensitive consumer DC/DC where full UIS validation is not required

Compared with SiR870DP-T1-GE3 and IRFH8326TRPBF, the SISHA10DN-T1-GE3 offers optimal balance of low gate charge, verified UIS robustness, and compact thermal footprint-making it preferred for space-constrained, high-frequency VRMs where gate drive efficiency and reliability are co-prioritized.

Availability

SISHA10DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SISHA10DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISHA10DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-power-density, high-frequency DC/DC conversion in datacenter, telecom, and industrial systems.

FAQ

What is the maximum continuous drain current rating for SISHA10DN-T1-GE3 at 70 °C case temperature?

The SISHA10DN-T1-GE3 supports 30 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and assumes proper PCB copper area for heat spreading per Vishay Application Note 826.

Does SISHA10DN-T1-GE3 require a gate resistor for reliable operation in a 1 MHz synchronous buck converter?

Yes - while the SISHA10DN-T1-GE3 has low intrinsic gate resistance (R_g = 0.3–3.4 Ω), a discrete gate resistor (typically 1–5 Ω) is recommended to damp ringing, control dV/dt, and prevent shoot-through in high-speed synchronous buck topologies. The 15.4 nC Q_g @ 4.5 V enables fast turn-on with minimal drive loss, but external R_g remains critical for EMI and stability.

Is SISHA10DN-T1-GE3 suitable for use as a high-side switch with bootstrap gate drive?

Yes - the SISHA10DN-T1-GE3 supports V_GS up to +20 V and is rated for V_DS = 30 V, making it compatible with standard bootstrap gate driver ICs (e.g., IR2110, LM5113) in high-side configurations. Its 1.1–2.2 V V_GS(th) ensures clean turn-on with typical 10–12 V bootstrap voltages, and its low Q_gd = 2.6 nC minimizes Miller-induced false turn-on risk.

What is the body diode forward voltage of SISHA10DN-T1-GE3 at 10 A and 25 °C junction temperature?

The body diode forward voltage (V_SD) of the SISHA10DN-T1-GE3 is 0.8–1.2 V at I_S = 10 A and T_J = 25 °C, as specified in the Drain-Source Body Diode Characteristics table. This low V_SD reduces conduction loss during dead-time conduction and improves light-load efficiency in synchronous rectifiers.

Can SISHA10DN-T1-GE3 be reworked using hot air after standard reflow soldering?

No - per Vishay documentation (note e), manual soldering with a soldering iron is not recommended for the PowerPAK 1212-8SH package, and rework requires controlled hot-air profiling per JEDEC J-STD-020. The leadless construction and exposed copper drain pad demand precise thermal management to avoid delamination or solder joint fracture during removal or replacement.

SISHA10DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 2425 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISHA10DN-T1-GE3 FAQ

1.How can I place an order for SISHA10DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISHA10DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISHA10DN-T1-GE3 reliable?

The price and inventory of SISHA10DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISHA10DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISHA10DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISHA10DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISHA10DN-T1-GE3?

SISHA10DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISHA10DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISHA10DN-T1-GE3?

For technical support, including SISHA10DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISHA10DN-T1-GE3 requirements.

6.How does Aetrix verify that SISHA10DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISHA10DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISHA10DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISHA10DN-T1-GE3?

All SISHA10DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISHA10DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISHA10DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISHA10DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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