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Vishay Siliconix SISHA12ADN-T1-GE3
- Part No.:
- SISHA12ADN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SH
- Datasheet:
-
SISHA12ADN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 22A/25A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,943
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Product details
Overview
SISHA12ADN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8SH package, delivering RDS(on) = 4.3 mΩ at VGS = 10 V and 6.0 mΩ at VGS = 4.5 V, with 25 A continuous drain current (TJ = 150 °C), optimized for high-efficiency DC-DC conversion in server VRMs and telecom POL modules.
For engineers reviewing the SISHA12ADN-T1-GE3 datasheet, SISHA12ADN-T1-GE3 pinout, SISHA12ADN-T1-GE3 application, or SISHA12ADN-T1-GE3 equivalent, key selection criteria include low gate charge (Qg = 13.6 nC typ. at 4.5 V), robust UIS rating, and thermal performance validated under TC = 25 °C with RthJC = 3.6 °C/W (typical).
Technical Context
This MOSFET employs trench-gate silicon technology with Gen IV process optimization to achieve low RDS(on) while maintaining fast switching via reduced Qgd (2.6 nC) and Crss/Ciss ratio of 0.025–0.050. It supports 4.5 V logic-level drive and exhibits stable threshold voltage (VGS(th) = 1.1–2.2 V) across -55 to +150 °C junction temperature range.
The device integrates a low-VSD body diode (0.86 V typ. at IS = 10 A) with trr = 27 ns (typ.) and Qrr = 15 nC (typ.), enabling efficient synchronous rectification and hard-switched topologies. Its PowerPAK 1212-8SH package features exposed-drain copper pads on bottom side for enhanced thermal conduction and current handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operation in ≤30 V bus applications like 12 V input VRMs. |
| RDS(on) @ 10 V | 4.3 mΩ max - Enables <1 W conduction loss at 15 A, critical for high-current POL stages. |
| RDS(on) @ 4.5 V | 6.0 mΩ max - Ensures full enhancement with standard 5 V logic or controller gate drivers without level-shifting. |
| Qg @ 4.5 V | 13.6 nC typ. - Reduces gate drive power and switching transition time in high-frequency (≥500 kHz) converters. |
| ID (cont.) | 25 A @ TC = 25 °C - Supports high-current output rails when mounted on thermally enhanced PCBs or heatsinks. |
| RthJC | 3.6 °C/W typical - Allows direct thermal path from die to heatsink or copper plane, enabling >20 W power dissipation with modest ΔT. |
| VSD | 0.86 V typ. @ IS = 10 A - Low forward drop minimizes body diode conduction loss during dead-time in synchronous buck stages. |
Pinout & Package
PowerPAK® 1212-8SH is a leadless, surface-mount package with 3.3 mm × 3.3 mm footprint, 0.9 mm height, and exposed-drain thermal pad on bottom side. Drain terminals occupy pins 1–4 and 5–8; source occupies pins 1–4; gate is on pin 5. No plating on exposed copper tip; solder fillet not required for reliable interconnection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 5–8 (all D pads) | Drain | Common high-side connection point for power switch node; electrically and thermally tied to exposed bottom copper. |
| 1–4 (S) | Source | Low-side return path for channel current; forms Kelvin sense connection with gate driver ground reference. |
| 5 (G) | Gate | Control terminal requiring <2.2 V threshold; layout must minimize inductance to suppress ringing during fast dV/dt transitions. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 30 % lower RDS(on) vs. prior generation at same die size, improving power density in space-constrained VRM designs. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (<1.7 Ω max) and ruggedness against unclamped inductive switching events up to 11 mJ. |
| Low Qgd/Qg ratio | 0.19 (2.6/13.6) reduces Miller effect, enabling stable operation with minimal gate resistance in high-dV/dt environments. |
| Exposed-drain thermal pad | Enables <3.6 °C/W junction-to-case thermal resistance, supporting >20 W continuous dissipation with 2 oz copper and thermal vias. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, suitable for industrial and telecom end-equipment. |
Applications
| Server VRM Output Stage | Telecom Brick Primary Switch |
|---|---|
Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage (0.8–1.2 V) from 12 V input in dual-processor servers. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500–1000 kHz with tight duty-cycle control and low RDS(on). Use Value: 4.3 mΩ RDS(on) limits conduction loss to <1 W at 15 A, enabling >95 % efficiency at full load with minimal heatsinking. |
Use Scenario: Primary-side switch in isolated 48 V input telecom DC-DC brick delivering 12 V/30 A output using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-voltage, high-current switching element rated for 30 V VDS, used in secondary-side synchronous rectification stage. Use Value: 6.0 mΩ RDS(on) at 4.5 V drive enables direct interface with PWM controller outputs, eliminating gate driver ICs and reducing BOM count. |
| GPU Power Delivery | Industrial PLC I/O Module |
Use Scenario: Multi-phase power stage for discrete GPU cards requiring rapid transient response and high peak current (>40 A per phase). IC Role / Device Role / Timing Role: High-current, low-inductance MOSFET with fast turn-on (td(on) = 10 ns typ. at 10 V) and low Qg for precise phase alignment. Use Value: 13.6 nC Qg at 4.5 V allows sub-100 ns switching transitions, minimizing dead-time losses and improving dynamic voltage regulation. |
Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules switching 24 V DC loads up to 5 A. IC Role / Device Role / Timing Role: Low-threshold, logic-level N-channel switch controlled directly by microcontroller GPIO (3.3 V/5 V). Use Value: VGS(th) = 1.1–2.2 V ensures reliable turn-on with 3.3 V logic, while 25 A rating provides 5× safety margin over 5 A load current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 3.8 mΩ @ 10 V, larger PowerPAK 8x8 package (5.0 mm × 6.0 mm), higher Qg (32 nC) | Better conduction loss but slower switching; suited for lower-frequency, higher-current applications where board space permits. | Select when thermal budget allows larger footprint and priority is ultra-low RDS(on) over switching speed. |
| IRLHS6342TRPBF | RDS(on) = 5.8 mΩ @ 4.5 V, PowerPAK SC-70 package (2.0 mm × 2.1 mm), lower ID (8.5 A) | Smaller footprint and lower gate charge (6.2 nC), but limited current capability and thermal mass. | Choose for compact, low-power auxiliary rails where 8.5 A max current and 1.5 W dissipation are sufficient. |
Compared with SiR872DP-T1-GE3 and IRLHS6342TRPBF, the SISHA12ADN-T1-GE3 balances mid-size footprint (3.3 mm × 3.3 mm), 25 A current rating, and 13.6 nC gate charge-making it optimal for space-constrained, high-efficiency 500+ kHz VRM and POL designs requiring both logic-level drive and robust thermal performance.
Availability
SISHA12ADN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC bricks, and GPU power delivery systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SISHA12ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SISHA12ADN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-efficiency, high-density DC-DC conversion in computing, telecom, and industrial infrastructure.
FAQ
What is the maximum continuous drain current rating for SISHA12ADN-T1-GE3 at 70 °C case temperature?
The SISHA12ADN-T1-GE3 supports 25 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions with adequate heatsinking, and is identical to its rating at TC = 25 °C due to the device's thermal design margin and PowerPAK 1212-8SH package construction.
Does SISHA12ADN-T1-GE3 support 3.3 V gate drive in practical applications?
Yes, the SISHA12ADN-T1-GE3 is fully compatible with 3.3 V logic-level gate drive. Its gate-source threshold voltage (VGS(th)) ranges from 1.1 V to 2.2 V, and RDS(on) is guaranteed at 6.0 mΩ maximum with VGS = 4.5 V - well within reach of buffered 3.3 V outputs. Real-world validation shows stable enhancement and <10 mΩ on-resistance at 3.3 V with moderate load current.
What is the significance of the "100 % Rg and UIS tested" feature for SISHA12ADN-T1-GE3?
"100 % Rg and UIS tested" means every unit of SISHA12ADN-T1-GE3 undergoes production screening for gate resistance (Rg ≤ 1.7 Ω) and unclamped inductive switching (UIS) energy (EAS ≥ 11 mJ). This ensures consistent gate drive behavior and verified ruggedness against voltage spikes during hard-switching, critical for reliability in VRM and telecom power stages where inductive transients are common.
How does the PowerPAK 1212-8SH package of SISHA12ADN-T1-GE3 improve thermal performance compared to SO-8?
The PowerPAK 1212-8SH package of SISHA12ADN-T1-GE3 delivers 3.6 °C/W typical junction-to-case thermal resistance - approximately 40 % lower than standard SO-8 packages (~6 °C/W). Its exposed-drain copper pad enables direct thermal coupling to PCB copper planes or heatsinks, significantly reducing junction temperature rise under 20–25 A loads and extending lifetime in high-power-density applications.
Can SISHA12ADN-T1-GE3 be used in synchronous rectification configurations?
Yes, the SISHA12ADN-T1-GE3 is well-suited for synchronous rectification. Its low body diode forward voltage (VSD = 0.86 V typ. at 10 A) and fast reverse recovery (trr = 27 ns typ., Qrr = 15 nC typ.) minimize conduction and switching losses during freewheeling. Combined with low RDS(on), it replaces Schottky diodes in secondary-side buck or LLC synchronous rectifier stages with measurable efficiency gains.
SISHA12ADN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8SH
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2070 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 28W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8SH
SISHA12ADN-T1-GE3 FAQ
1.How can I place an order for SISHA12ADN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISHA12ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISHA12ADN-T1-GE3 reliable?
The price and inventory of SISHA12ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISHA12ADN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISHA12ADN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISHA12ADN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISHA12ADN-T1-GE3?
SISHA12ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISHA12ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISHA12ADN-T1-GE3?
For technical support, including SISHA12ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISHA12ADN-T1-GE3 requirements.
6.How does Aetrix verify that SISHA12ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISHA12ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISHA12ADN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISHA12ADN-T1-GE3?
All SISHA12ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISHA12ADN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISHA12ADN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISHA12ADN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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