Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS02DN-T1-GE3

Name: SISS02DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS02DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SISS02DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS02DN-T1-GE3.pdf

Description:: MOSFET N-CH 25V 51A/80A PPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,988

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SISS02DN-T1-GE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, delivering R_DS(on) = 1.20 mΩ at V_GS = 10 V and 1.83 mΩ at V_GS = 4.5 V, with 24.3 nC total gate charge and 80 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SISS02DN-T1-GE3 datasheet, SISS02DN-T1-GE3 pinout, SISS02DN-T1-GE3 application, or SISS02DN-T1-GE3 equivalent, this page provides verified electrical parameters, thermal resistance data (R_thJC = 1.5 °C/W), body diode characteristics (V_SD = 0.73 V @ 5 A), and validated alternative options for high-density power conversion designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance while maintaining robust switching performance. Its optimized Q_g/Q_gd ratio and low reverse transfer capacitance (C_rss = 206 pF) reduce switching losses in hard-switched and synchronous rectifier topologies.

The device features 100% R_g and UIS tested units, with a gate-source threshold voltage of 1–2.2 V and guaranteed avalanche energy rating (E_AS = 45 mJ). It operates across –55 °C to +150 °C junction temperature range and supports lead-free reflow per JEDEC J-STD-020.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage suitable for 12 V and 24 V input DC/DC stages
R_DS(on) @ 10 V	1.20 mΩ - Enables <1 W conduction loss at 80 A, critical for high-current synchronous buck output stages
R_DS(on) @ 4.5 V	1.83 mΩ - Ensures reliable turn-on with 5 V gate drive in controller-based synchronous rectifiers
Q_g typ.	24.3 nC - Low gate charge minimizes driver power loss and enables efficient operation at >500 kHz switching frequencies
I_D cont. (T_C = 25 °C)	80 A - High current capability supports single-device implementation in 100–200 W power modules
R_thJC max.	1.9 °C/W - Low junction-to-case thermal resistance allows direct heatsinking via exposed drain pad for thermal management
V_SD @ 5 A	0.73 V - Low body diode forward voltage reduces reverse recovery loss during dead-time conduction

Pinout & Package

PowerPAK® 1212-8S is a thermally enhanced, leadless surface-mount package with an exposed drain copper pad on the bottom side. The package measures 3.3 mm × 3.3 mm × 0.75 mm and uses a dual-side thermal interface: top-side source/gate terminals and bottom-side drain thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain	Exposed drain pad on bottom surface serves as primary thermal path and high-current return path
G (Pin 1 dot marker)	Gate	Single gate terminal located adjacent to source pins; requires controlled gate drive to avoid oscillation due to low R_g (0.2–1.35 Ω)

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced switching + conduction loss trade-off
Optimized Q_gd/Q_gs ratio	Minimizes Miller-induced switching delay and improves hard-switching robustness in synchronous rectifier mode
100% R_g tested	Ensures consistent gate drive requirements across production lots, simplifying driver stage design
100% UIS tested	Guarantees ruggedness against inductive switching stress without external snubbers in OR-ing and load switch applications
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912)

Applications

Synchronous Buck Converter	Synchronous Rectification
Use Scenario: Primary-side high-side or secondary-side low-side switch in 12 V–48 V input, 3.3 V–12 V output DC/DC converters operating at 300–1000 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to eliminate forward voltage drop and reverse recovery loss. Use Value: Reduces conduction loss by >50 % vs. 40 V Schottky, enabling >95 % efficiency at 50 A output in 25 mm² footprint.	Use Scenario: Secondary-side rectifier in isolated LLC or phase-shifted full-bridge converters for server VRMs and telecom power supplies. IC Role / Device Role / Timing Role: Actively commutated rectifier controlled by dedicated gate driver synchronized to transformer secondary waveform. Use Value: Achieves <0.8 V effective forward drop and <44 ns reverse recovery time, cutting rectifier loss by 65 % over legacy Si devices.
OR-ing Circuit	High-Density Load Switch
Use Scenario: Backplane OR-ing diode replacement in redundant 12 V or 48 V power distribution networks for networking equipment and industrial PLCs. IC Role / Device Role / Timing Role: Unidirectional power path controller using ideal diode configuration with external sense resistor and comparator feedback. Use Value: Eliminates 0.3–0.5 V diode drop, reducing heat generation by >70 % and enabling fanless 200 W board-level power delivery.	Use Scenario: Hot-swap or inrush-limited load switch for FPGA, ASIC, or memory rail sequencing in embedded computing and edge AI accelerators. IC Role / Device Role / Timing Role: Main power FET in discrete hot-swap controller circuit with external current sensing and slew-rate control. Use Value: Supports 80 A steady-state current with <1.2 mΩ on-resistance, limiting I²R loss to <6.4 W and enabling compact thermal design.

Synchronous Buck Converter

Synchronous Rectification

Use Scenario: Primary-side high-side or secondary-side low-side switch in 12 V–48 V input, 3.3 V–12 V output DC/DC converters operating at 300–1000 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to eliminate forward voltage drop and reverse recovery loss.

Use Value: Reduces conduction loss by >50 % vs. 40 V Schottky, enabling >95 % efficiency at 50 A output in 25 mm² footprint.

Use Scenario: Secondary-side rectifier in isolated LLC or phase-shifted full-bridge converters for server VRMs and telecom power supplies.

IC Role / Device Role / Timing Role: Actively commutated rectifier controlled by dedicated gate driver synchronized to transformer secondary waveform.

Use Value: Achieves <0.8 V effective forward drop and <44 ns reverse recovery time, cutting rectifier loss by 65 % over legacy Si devices.

OR-ing Circuit

High-Density Load Switch

Use Scenario: Backplane OR-ing diode replacement in redundant 12 V or 48 V power distribution networks for networking equipment and industrial PLCs.

IC Role / Device Role / Timing Role: Unidirectional power path controller using ideal diode configuration with external sense resistor and comparator feedback.

Use Value: Eliminates 0.3–0.5 V diode drop, reducing heat generation by >70 % and enabling fanless 200 W board-level power delivery.

Use Scenario: Hot-swap or inrush-limited load switch for FPGA, ASIC, or memory rail sequencing in embedded computing and edge AI accelerators.

IC Role / Device Role / Timing Role: Main power FET in discrete hot-swap controller circuit with external current sensing and slew-rate control.

Use Value: Supports 80 A steady-state current with <1.2 mΩ on-resistance, limiting I²R loss to <6.4 W and enabling compact thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 1.35 mΩ @ 10 V; larger PowerPAK® 1212-8 package (3.3 × 3.3 mm same, but 1.05 mm height); higher Q_g = 31.5 nC	Better thermal margin at >100 °C case temperature due to thicker mold compound; less suited for ultra-thin (<0.9 mm) PCB assemblies	Prefer when board-level thermal resistance exceeds 2.5 °C/W and junction temperature must stay <135 °C under sustained 70 A load.
IRLHS6242TRPBF	R_DS(on) = 1.45 mΩ @ 10 V; PowerPAIR® 3.3 × 3.3 mm package with dual-die layout; lower C_iss = 3900 pF vs. 4450 pF	Superior high-frequency EMI performance due to split-gate structure; not rated for UIS testing per datasheet	Select when operating >1 MHz with strict EMI limits and avalanche robustness is managed externally via clamping circuits.

Compared with SISS02DN-T1-GE3, SiR626DP-T1-GE3 trades slightly higher gate charge for improved thermal derating above 100 °C, while IRLHS6242TRPBF offers lower input capacitance for MHz-range operation but lacks factory-tested avalanche capability-making SISS02DN-T1-GE3 optimal for compact, high-reliability synchronous rectification where both low R_DS(on) and ruggedness are mandatory.

Availability

SISS02DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, OR-ing circuits, and high-density load switches requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and telecom power systems.

Supply support for SISS02DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISS02DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency DC/DC conversion in space-constrained applications such as server VRMs, 5G base station power, and automotive ADAS ECUs.

FAQ

What is the maximum continuous drain current rating for SISS02DN-T1-GE3 at 70 °C case temperature?

The SISS02DN-T1-GE3 supports 80 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 80 A value at 25 °C case temperature and is validated under steady-state thermal conditions with proper PCB copper area and airflow.

Does SISS02DN-T1-GE3 have integrated gate protection diodes?

No, SISS02DN-T1-GE3 does not include integrated gate protection diodes. External Zener clamping (e.g., 12 V) between gate and source is recommended when driving with high-voltage controllers or in noisy environments to prevent V_GS exceeding ±12 V rating.

What is the typical body diode reverse recovery time (t_rr) for SISS02DN-T1-GE3?

The typical body diode reverse recovery time for SISS02DN-T1-GE3 is 44 ns, measured at I_F = 10 A, di/dt = 100 A/μs, and T_J = 25 °C. This fast recovery supports high-frequency synchronous rectification with minimal switching loss during dead-time conduction.

Can SISS02DN-T1-GE3 be used in linear-mode (saturation) operation?

SISS02DN-T1-GE3 is not characterized or rated for sustained linear-mode operation. Its Safe Operating Area (SOA) curve shows limited DC capability-only 10 A at 10 V V_DS-and thermal limitations make it unsuitable for analog pass-element use without aggressive heatsinking and derating.

Is the PowerPAK® 1212-8S package of SISS02DN-T1-GE3 compatible with standard reflow profiles?

Yes, the SISS02DN-T1-GE3 in PowerPAK® 1212-8S complies with JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C. Vishay recommends following the profile in document 73257, with controlled ramp rates to avoid solder voiding on the exposed drain pad.

SISS02DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: +16V, -12V

Input Capacitance (Ciss) (Max) @ Vds:: 4450 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS02DN-T1-GE3 FAQ

1.How can I place an order for SISS02DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS02DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS02DN-T1-GE3 reliable?

The price and inventory of SISS02DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS02DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS02DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS02DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS02DN-T1-GE3?

SISS02DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS02DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS02DN-T1-GE3?

For technical support, including SISS02DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS02DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS02DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS02DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS02DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS02DN-T1-GE3?

All SISS02DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS02DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS02DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS02DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …