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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS08DN-T1-GE3

Name: SISS08DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS08DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS08DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS08DN-T1-GE3.pdf

Description:: MOSFET N-CH 25V 53.9/195.5A PPAK

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Product details

Overview

SiSS08DN-T1-GE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, delivering R_DS(on) = 1.23 mΩ at V_GS = 10 V and 1.87 mΩ at V_GS = 4.5 V, with 195.5 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SiSS08DN-T1-GE3 datasheet, SiSS08DN-T1-GE3 pinout, SiSS08DN-T1-GE3 application, or SiSS08DN-T1-GE3 equivalent, this device supports high-power-density buck converters, OR-ing circuits, and load switching where low conduction loss, fast switching (Q_g = 26.1 nC typ. at 4.5 V), and thermally enhanced leadless packaging are critical.

Technical Context

This MOSFET employs a trench-based silicon structure with optimized gate charge profile (Q_gd/Q_gs ratio controlled) to minimize switching losses in hard-switched topologies. Its 25 V V_DS rating targets point-of-load and intermediate bus conversion stages where overvoltage margin and body diode recovery (t_rr = 40–80 ns) must be tightly managed.

The PowerPAK 1212-8S package integrates eight exposed-drain terminals on the bottom side and a single top-side gate pad, enabling low-inductance layout and direct thermal coupling to PCB copper. Junction-to-case thermal resistance is 1.5 °C/W (typ.), supporting high-current operation without external heatsinks under constrained board area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input rails with safety margin.
R_DS(on) @ 10 V	1.23 mΩ max - Enables <1.2 W conduction loss at 100 A, critical for >95 % efficiency in high-current synchronous rectifiers.
R_DS(on) @ 4.5 V	1.87 mΩ max - Ensures robust turn-on with 5 V gate drive, supporting controller ICs with limited gate voltage swing.
Q_g @ 4.5 V	26.1 nC typ. - Low total gate charge reduces driver power demand and enables MHz-class switching in compact converters.
I_D (continuous)	195.5 A @ T_C = 25 °C - High current capability allows single-device replacement of paralleled lower-current MOSFETs.
Q_rr	30–60 nC - Controlled reverse recovery charge minimizes shoot-through risk and EMI in synchronous buck high-side switching.
R_thJC	1.5 °C/W typ. - Enables direct thermal path from die to PCB, supporting >100 W dissipation with 2 oz copper and thermal vias.

Pinout & Package

PowerPAK® 1212-8S is a 3.3 mm × 3.3 mm, 8-terminal, leadless surface-mount package with top-side gate (Pin 1) and bottom-side source/drain configuration. Drain terminals occupy pins 5–8 (bottom), source occupies pins 1–4 (bottom), and gate is accessible only on top (Pin 1 marking dot).

Pin/Terminal	Circuit Role	Design Meaning
Top Pin 1 (dot-marked)	Gate	Sole gate connection; requires low-inductance routing to controller output to preserve switching speed.
Bottom Pins 1–4	Source	Four parallel source terminals; must be connected to large-area ground plane for low loop inductance and thermal spreading.
Bottom Pins 5–8	Drain	Four parallel drain terminals; electrically and thermally tied to internal die drain metallization; primary heat transfer path to PCB.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon process	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for 25 V MOSFETs, reducing both conduction and switching losses simultaneously.
Optimized Q_gd/Q_gs ratio	Minimizes Miller plateau duration during turn-off, improving controllability in high-dV/dt environments like multiphase VRMs.
100 % R_g and UIS tested	Ensures gate resistance consistency (<0.2–1.3 Ω) and ruggedness against unclamped inductive switching events up to 45 mJ.
Thermally enhanced PowerPAK 1212-8S	Provides 2× thermal performance vs. SO-8 while occupying ~30 % less board area, enabling ultra-dense power stage layouts.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile, supporting automated assembly without exemptions.

Applications

Synchronous Buck Converter	OR-ing Circuit
Use Scenario: Primary high-side switch in 48 V to 12 V intermediate bus converter operating at 500 kHz. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power switch handling peak currents >150 A with minimal voltage drop and thermal rise. Use Value: Achieves >96 % efficiency at full load by reducing conduction loss to <1.5 W and enabling tight thermal management via bottom-side drain pads.	Use Scenario: Back-to-back MOSFET pair in redundant 12 V power supply system for telecom shelf controllers. IC Role / Device Role / Timing Role: Low-forward-voltage OR-ing switch replacing Schottky diodes, actively controlling forward conduction and reverse blocking. Use Value: Eliminates 0.4–0.7 V diode drop, cutting power loss by >70 % and enabling hot-swap capability without thermal runaway.
Synchronous Rectifier	High-Density Load Switch
Use Scenario: Secondary-side switch in isolated 48 V to 3.3 V DC/DC module for AI accelerator cards. IC Role / Device Role / Timing Role: Synchronously rectifying flyback or LLC secondary output, driven by timing-controlled gate signal. Use Value: Reduces rectifier loss by >50 % vs. Schottky diodes, allowing 30 % higher power density within same thermal envelope.	Use Scenario: Inrush-limited main power switch for industrial PLC I/O module with 100 A peak load requirement. IC Role / Device Role / Timing Role: High-current, low-impedance power path enable/disable element with integrated body diode for bidirectional current handling. Use Value: Supports 195.5 A continuous current with <2 mΩ on-resistance, eliminating need for parallel devices and simplifying PCB layout.

Synchronous Buck Converter

OR-ing Circuit

Use Scenario: Primary high-side switch in 48 V to 12 V intermediate bus converter operating at 500 kHz.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power switch handling peak currents >150 A with minimal voltage drop and thermal rise.

Use Value: Achieves >96 % efficiency at full load by reducing conduction loss to <1.5 W and enabling tight thermal management via bottom-side drain pads.

Use Scenario: Back-to-back MOSFET pair in redundant 12 V power supply system for telecom shelf controllers.

IC Role / Device Role / Timing Role: Low-forward-voltage OR-ing switch replacing Schottky diodes, actively controlling forward conduction and reverse blocking.

Use Value: Eliminates 0.4–0.7 V diode drop, cutting power loss by >70 % and enabling hot-swap capability without thermal runaway.

Synchronous Rectifier

High-Density Load Switch

Use Scenario: Secondary-side switch in isolated 48 V to 3.3 V DC/DC module for AI accelerator cards.

IC Role / Device Role / Timing Role: Synchronously rectifying flyback or LLC secondary output, driven by timing-controlled gate signal.

Use Value: Reduces rectifier loss by >50 % vs. Schottky diodes, allowing 30 % higher power density within same thermal envelope.

Use Scenario: Inrush-limited main power switch for industrial PLC I/O module with 100 A peak load requirement.

IC Role / Device Role / Timing Role: High-current, low-impedance power path enable/disable element with integrated body diode for bidirectional current handling.

Use Value: Supports 195.5 A continuous current with <2 mΩ on-resistance, eliminating need for parallel devices and simplifying PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 1.35 mΩ @ 4.5 V; PowerPAK SO-8 package; higher R_thJA (40 °C/W vs. 20 °C/W typ.)	Less effective thermal dissipation in high-ambient environments; requires larger copper area for same current rating.	Preferred when SO-8 footprint compatibility is required and thermal headroom exceeds 25 °C above ambient.
DMTH10H025LPSQ-13	R_DS(on) = 2.5 mΩ @ 4.5 V; PowerDI 5060 package; lower Q_g (19.5 nC) but higher on-resistance	Higher conduction loss dominates at >50 A; better suited for medium-current, high-frequency resonant topologies.	Select when switching frequency exceeds 1 MHz and average current remains below 80 A, prioritizing gate drive efficiency over conduction loss.

Compared with IRLHS6342TRPBF and DMTH10H025LPSQ-13, SiSS08DN-T1-GE3 offers the lowest R_DS(on) × Q_g product in its class, making it optimal for high-current, high-efficiency synchronous rectification where thermal constraints and conduction loss dominate design trade-offs.

Availability

SiSS08DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, OR-ing circuits, and high-density load switching requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for SiSS08DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiSS08DN-T1-GE3 belongs to Vishay's TrenchFET Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in datacenter, telecom, and industrial power systems where thermal density and switching efficiency are paramount.

FAQ

What is the maximum continuous drain current rating for SiSS08DN-T1-GE3 at 70 °C case temperature?

The SiSS08DN-T1-GE3 supports 156.4 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package and ensures safe operation under sustained high-power conditions without exceeding the 150 °C maximum junction temperature. The SiSS08DN-T1-GE3 maintains stable R_DS(on) performance across this range due to its low thermal resistance.

Does SiSS08DN-T1-GE3 include integrated ESD protection on the gate terminal?

No, SiSS08DN-T1-GE3 does not incorporate on-die ESD protection circuitry. The gate oxide is rated for ±16 V maximum gate-source voltage, and the device requires external gate protection-such as series resistance and/or TVS clamping-during handling and PCB assembly. This is consistent with high-performance power MOSFETs optimized for low Q_g and R_DS(on), where added protection structures would degrade switching performance. The SiSS08DN-T1-GE3 datasheet specifies no built-in ESD protection.

Can SiSS08DN-T1-GE3 be used in avalanche-rated applications?

Yes, SiSS08DN-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy (E_AS) of 45 mJ with I_AS = 30 A. This capability enables reliable operation in circuits with parasitic inductance, such as motor drives or non-synchronous flyback converters, where transient voltage spikes may exceed V_DS. The SiSS08DN-T1-GE3 avalanche rating is validated per JEDEC standard JESD24-1 and documented in the Absolute Maximum Ratings section.

What is the typical gate threshold voltage range for SiSS08DN-T1-GE3?

The gate threshold voltage (V_GS(th)) for SiSS08DN-T1-GE3 is specified from 1.0 V to 2.2 V at I_D = 250 μA and T_J = 25 °C. This range ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining low leakage at sub-threshold voltages. The SiSS08DN-T1-GE3 exhibits a negative V_GS(th) temperature coefficient (−5.6 mV/°C), meaning threshold decreases slightly as junction temperature rises-a characteristic that enhances current sharing in paralleled configurations.

Is the PowerPAK 1212-8S package of SiSS08DN-T1-GE3 compatible with standard reflow soldering profiles?

Yes, the SiSS08DN-T1-GE3 in PowerPAK 1212-8S is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. However, due to its leadless construction and exposed copper drain terminals, the solder fillet at the edge of the bottom terminals is not guaranteed nor required-the primary interconnection relies on solder wetting to the large-area copper pads beneath the package. Manual soldering with an iron is not recommended. The SiSS08DN-T1-GE3 reflow profile must follow Vishay document 73257 to ensure void-free solder joints and mechanical integrity.

SISS08DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 53.9A (Ta), 195.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.23mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3670 pF @ 12.5 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS08DN-T1-GE3 FAQ

1.How can I place an order for SISS08DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS08DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS08DN-T1-GE3 reliable?

The price and inventory of SISS08DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS08DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS08DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS08DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS08DN-T1-GE3?

SISS08DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS08DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS08DN-T1-GE3?

For technical support, including SISS08DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS08DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS08DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS08DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS08DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS08DN-T1-GE3?

All SISS08DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS08DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS08DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS08DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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