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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS10ADN-T1-GE3

Name: SISS10ADN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS10ADN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS10ADN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS10ADN-T1-GE3.pdf

Description:: MOSFET N-CH 40V 31.7A/109A PPAK

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Product details

Overview

SISS10ADN-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, delivering R_DS(on) = 2.65 mΩ at V_GS = 10 V and 3.95 mΩ at V_GS = 4.5 V, with 109 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SISS10ADN-T1-GE3 datasheet, SISS10ADN-T1-GE3 pinout, SISS10ADN-T1-GE3 application, or SISS10ADN-T1-GE3 equivalent, key selection criteria include low Q_g (18.5 nC typ. at 4.5 V), ultra-low Q_oss, 100% R_g and UIS tested reliability, and thermal performance with R_thJC = 1.7 °C/W (typ.) for high-power-density board designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to minimize conduction and switching losses simultaneously. Its optimized Q_g/Q_gd ratio and low Crss/Ciss (0.018–0.036) enable fast, controlled turn-on/turn-off with reduced voltage overshoot and EMI in hard-switched topologies.

The device features a robust body diode with t_rr = 29 ns (typ.), Q_rr = 17 nC (typ.), and V_SD = 0.73 V (typ. at I_S = 5 A), supporting efficient reverse recovery in synchronous buck and active clamp circuits without external Schottky assistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage suitable for 12 V and 24 V input DC/DC systems with margin against transients.
R_DS(on) @ 10 V	2.65 mΩ max - Enables <1.5 W conduction loss at 100 A, critical for >95% efficiency in high-current POL converters.
R_DS(on) @ 4.5 V	3.95 mΩ max - Ensures strong gate drive compatibility with 3.3 V and 5 V controllers in space-constrained applications.
Q_g @ 4.5 V	18.5 nC typ. - Reduces gate drive power and enables higher switching frequencies (>1 MHz) without excessive driver loss.
I_D (continuous)	109 A @ T_C = 25 °C - Supports high-current single-phase output stages without paralleling, simplifying layout and BOM.
R_thJC	1.7 °C/W typ. - Allows direct thermal coupling to PCB copper or heatsink for effective junction temperature control under full load.
Q_oss	21.5 nC typ. - Minimizes capacitive turn-off energy loss, improving light-load efficiency in variable-frequency operation.

Pinout & Package

PowerPAK® 1212-8S is a leadless, surface-mount package with exposed-drain thermal pad (8 mm² bottom-side copper area) and 0.65 mm pitch. Dimensions: 3.3 mm × 3.3 mm × 0.75 mm (L × W × H). Pin 1 marked by dot; no leads - soldering requires reflow profile per Doc. #73257.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect directly to thermal pad; provide low-inductance, high-current path to ground plane.
Gate (G)	Control input	Single gate terminal located adjacent to source pins - enables short, low-inductance gate loop for stable high-speed switching.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers best-in-class R_DS(on) × Q_g figure of merit (FOM) for 40 V class, enabling higher power density than prior generations.
100% R_g and UIS tested	Ensures gate robustness against overvoltage and avalanche energy handling (E_AS = 45 mJ) without derating in production.
Optimized Q_gd/Q_gs ratio	Reduces Miller-induced shoot-through risk and improves controllability during hard commutation in synchronous rectifiers.
Low Crss/Ciss	0.018–0.036 range minimizes voltage-dependent gate charge, stabilizing switching speed across operating V_DS.
Body diode t_rr & Q_rr	29 ns / 17 nC (typ.) enables clean commutation in synchronous buck without external diode snubbing.

Applications

Server VRM Output Stage	Industrial 48 V Input DC/DC Converter
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A per rail. IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 2.65 mΩ R_DS(on) and 18.5 nC Q_g reduce total power loss below 2.1 W at 100 A, enabling compact thermal design without forced air.	Use Scenario: Isolated or non-isolated step-down converter for PLC I/O modules, motor drives, or industrial PoE switches with 48 V bus. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in 300–500 kHz buck or forward topology, driven by dedicated gate driver IC. Use Value: 3.95 mΩ R_DS(on) at 4.5 V ensures full enhancement with standard logic-level drivers, eliminating need for level-shifting circuitry.
Telecom Base Station PSU	Automotive ADAS Domain Controller Power
Use Scenario: High-efficiency 12 V intermediate bus converter feeding FPGA, ASIC, and memory rails in 5G remote radio units. IC Role / Device Role / Timing Role: Low-side switch in interleaved multiphase buck, handling 60–80 A per phase with tight thermal constraints. Use Value: 1.7 °C/W R_thJC allows direct thermal attachment to internal copper layers, maintaining T_J < 115 °C at full load without external heatsink.	Use Scenario: Compact 5 V/3.3 V point-of-load regulator powering radar SoCs and camera ISPs in automotive domain controllers (AEC-Q101 qualified variant available). IC Role / Device Role / Timing Role: Final-stage synchronous rectifier in monolithic or discrete buck converter, operating at ambient up to 105 °C. Use Value: -55 °C to +150 °C T_J rating and 100% UIS testing ensure reliable operation under automotive transient conditions including load dump.

Server VRM Output Stage

Industrial 48 V Input DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A per rail.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, operating at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 2.65 mΩ R_DS(on) and 18.5 nC Q_g reduce total power loss below 2.1 W at 100 A, enabling compact thermal design without forced air.

Use Scenario: Isolated or non-isolated step-down converter for PLC I/O modules, motor drives, or industrial PoE switches with 48 V bus.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in 300–500 kHz buck or forward topology, driven by dedicated gate driver IC.

Use Value: 3.95 mΩ R_DS(on) at 4.5 V ensures full enhancement with standard logic-level drivers, eliminating need for level-shifting circuitry.

Telecom Base Station PSU

Automotive ADAS Domain Controller Power

Use Scenario: High-efficiency 12 V intermediate bus converter feeding FPGA, ASIC, and memory rails in 5G remote radio units.

IC Role / Device Role / Timing Role: Low-side switch in interleaved multiphase buck, handling 60–80 A per phase with tight thermal constraints.

Use Value: 1.7 °C/W R_thJC allows direct thermal attachment to internal copper layers, maintaining T_J < 115 °C at full load without external heatsink.

Use Scenario: Compact 5 V/3.3 V point-of-load regulator powering radar SoCs and camera ISPs in automotive domain controllers (AEC-Q101 qualified variant available).

IC Role / Device Role / Timing Role: Final-stage synchronous rectifier in monolithic or discrete buck converter, operating at ambient up to 105 °C.

Use Value: -55 °C to +150 °C T_J rating and 100% UIS testing ensure reliable operation under automotive transient conditions including load dump.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.1 mΩ @ 4.5 V; Q_g = 22 nC; PowerPAK SO-8 package (larger footprint, higher R_thJA)	Higher conduction loss at 10 A–30 A range; less suitable for >1 MHz switching due to higher Q_g	Prefer when legacy SO-8 layout reuse is required and thermal budget allows 30% higher R_DS(on).
DMTH4007LPSQ-13	R_DS(on) = 2.8 mΩ @ 4.5 V; Q_g = 20.5 nC; PowerDI 5060 package; AEC-Q101 qualified	Same R_DS(on) performance but larger 5.0 mm × 6.0 mm footprint; automotive-qualified for harsh environments	Choose for automotive-grade compliance where qualification documentation and extended temperature validation are mandatory.

Compared with IRLHS6342TRPBF and DMTH4007LPSQ-13, SISS10ADN-T1-GE3 offers the lowest R_DS(on) × Q_g FOM in its class and smallest 3.3 mm × 3.3 mm footprint - enabling highest power density and best efficiency in space-constrained telecom and server applications where automotive qualification is not required.

Availability

SISS10ADN-T1-GE3 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, industrial DC/DC conversion, and automotive ADAS power supply applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for SISS10ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SISS10ADN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current synchronous rectification in next-generation power supplies where low R_DS(on), low Q_g, and robust thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for SISS10ADN-T1-GE3 at 70 °C case temperature?

The SISS10ADN-T1-GE3 supports 86.8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 109 A rating at 25 °C case temperature, based on the device's R_thJC = 1.7 °C/W (typ.) and maximum T_J = 150 °C limit. Designers must verify PCB copper area and airflow to sustain this current reliably.

Does SISS10ADN-T1-GE3 have AEC-Q101 qualification for automotive use?

The SISS10ADN-T1-GE3 itself is not AEC-Q101 qualified per the published datasheet (S23-0898-Rev. B). However, Vishay offers automotive-qualified variants in the same family (e.g., SISS10ADN-T1-GE3Q) with full AEC-Q101 stress test reporting. For automotive ADAS or infotainment power rails, users should specify the Q-suffix part number and confirm qualification status via Vishay's automotive product portal.

What is the gate threshold voltage range for SISS10ADN-T1-GE3, and how does it affect 3.3 V logic-level drive?

The SISS10ADN-T1-GE3 has a gate threshold voltage V_GS(th) of 1.1 V to 2.4 V at T_J = 25 °C. This low threshold ensures full enhancement with 3.3 V gate drive, as confirmed by its R_DS(on) = 3.95 mΩ max at V_GS = 4.5 V - well within safe margin for 3.3 V ±10% systems. The device remains fully enhanced even at elevated temperatures due to negative V_GS(th) temperature coefficient.

How is the PowerPAK 1212-8S package of SISS10ADN-T1-GE3 thermally connected to the PCB?

The SISS10ADN-T1-GE3 uses a leadless PowerPAK 1212-8S package with an exposed copper drain pad on the bottom side. Thermal connection is achieved by soldering this pad directly to a large PCB copper pour or thermal pad, which acts as the primary heat path. The datasheet specifies R_thJC = 1.7 °C/W (typ.) - measured from junction to this exposed drain - making PCB layout and copper thickness critical for thermal performance.

Can SISS10ADN-T1-GE3 be used in parallel configurations, and what layout considerations apply?

Yes, SISS10ADN-T1-GE3 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Key layout requirements include matched gate trace lengths (<1 mm difference), symmetrical source/drain routing, and individual gate resistors (1–5 Ω) to dampen oscillation. The four-source/four-drain terminal structure reduces parasitic inductance, improving dynamic balance between paralleled devices.

SISS10ADN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 31.7A (Ta), 109A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.65mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 61 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3030 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 56.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS10ADN-T1-GE3 FAQ

1.How can I place an order for SISS10ADN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS10ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS10ADN-T1-GE3 reliable?

The price and inventory of SISS10ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS10ADN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS10ADN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS10ADN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS10ADN-T1-GE3?

SISS10ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS10ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS10ADN-T1-GE3?

For technical support, including SISS10ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS10ADN-T1-GE3 requirements.

6.How does Aetrix verify that SISS10ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS10ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS10ADN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS10ADN-T1-GE3?

All SISS10ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS10ADN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS10ADN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS10ADN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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