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Vishay Siliconix SISS10DN-T1-GE3
- Part No.:
- SISS10DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS10DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK 1212-8S
- Quantity:
- Payment:
- Shipping:
Inventory:2,764
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Product details
Overview
SISS10DN-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) of 2.65 mΩ at VGS = 10 V and 3.60 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous buck converters and VRMs.
For engineers reviewing the SISS10DN-T1-GE3 datasheet, SISS10DN-T1-GE3 pinout, SISS10DN-T1-GE3 application, or SISS10DN-T1-GE3 equivalent, key selection criteria include its low gate charge (23 nC typ. at VGS = 4.5 V), optimized Qgd/Qgs ratio for reduced switching loss, 100 % Rg and UIS tested reliability, and lead-free/halogen-free compliance for industrial and computing power stages.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low RDS(on) and tightly controlled dynamic parameters. Its gate structure minimizes Qgd while maintaining robust threshold voltage stability (VGS(th) = 1.1–2.4 V) and low Crss/Ciss ratio (0.019–0.038), enabling fast, low-loss switching in hard-switched DC/DC topologies.
The device features integrated body diode with trr = 38–76 ns and Qrr = 33–66 nC, supporting efficient synchronous rectification. Thermal design is enabled by RthJC = 1.7 °C/W (typ.) and RthJA = 21 °C/W (t ≤ 10 s), with package-limited power dissipation up to 57 W at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 40 V - Supports input rails up to 36 V nominal in point-of-load converters |
| RDS(on) (Max) | 2.65 mΩ at VGS = 10 V - Enables <1 W conduction loss at 20 A in high-current VRM phases |
| ID (Cont., TC = 25 °C) | 60 A - Sustains full-phase current in compact 1212-8S footprint without external heatsink |
| Qg (Typ.) | 23 nC at VGS = 4.5 V - Reduces gate drive power and enables 1 MHz+ switching in high-density DC/DC |
| Qgd/Qgs Ratio | Optimized per datasheet - Minimizes Miller-induced switching delay and shoot-through risk |
| trr / Qrr | 38 ns / 33 nC (TJ = 25 °C) - Low reverse recovery loss critical for synchronous rectifier efficiency |
| RthJC (Typ.) | 1.7 °C/W - Allows direct thermal coupling to PCB copper or heatsink for >50 W power handling |
Pinout & Package
SISS10DN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm), with exposed drain pads on bottom side for enhanced thermal performance and source/gate terminals on top surface. The package is RoHS-compliant, halogen-free, and qualified for reflow soldering per JEDEC J-STD-020 (peak 260 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Top) | Source (S) | Four parallel top-side source connections reduce source inductance and improve current sharing |
| 5, 6, 7, 8 (Top) | Drain (D) | Four top-side drain terminals provide low-inductance gate-drive return path and assist layout symmetry |
| G (Center Top) | Gate (G) | Single central gate pad minimizes gate loop inductance and improves switching consistency |
| Bottom (Entire Exposed Area) | Drain (D) | Large-area exposed copper drain enhances thermal transfer to PCB ground plane or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on) × Qg figure-of-merit for 40 V class, reducing total switching + conduction loss |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy stress in real-world VRM transients |
| Optimized Qgd/Qgs ratio | Reduces Miller plateau duration and improves controllability during hard commutation in synchronous buck stages |
| Low Crss (72 pF typ.) | Minimizes capacitive coupling between drain and gate, lowering EMI and improving noise immunity |
| Body diode trr = 38 ns | Enables clean zero-voltage switching transitions in synchronous rectification, reducing diode recovery loss |
Applications
| Server VRM Phase Legs | Synchronous Buck Converters |
|---|---|
Use Scenario: High-current, multi-phase voltage regulator modules supplying CPUs/GPUs in data center servers. IC Role / Device Role / Timing Role: High-side or low-side power switch in interleaved buck topology operating at 300–1000 kHz. Use Value: 2.65 mΩ RDS(on) and 23 nC Qg enable >95 % efficiency at 50 A output with minimal thermal derating on standard 4-layer PCB. |
Use Scenario: Point-of-load (POL) converter in telecom baseband units requiring compact, high-efficiency 12 V → 1 V conversion. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in fixed-frequency buck regulator with external PWM controller. Use Value: Fast 38 ns body diode trr and low Qrr minimize reverse recovery loss, improving light-load efficiency by up to 3 % vs. older Gen III MOSFETs. |
| Embedded DC/DC Modules | Battery Management Systems |
Use Scenario: Integrated power module for industrial PLCs where board space and thermal management are constrained. IC Role / Device Role / Timing Role: Primary switching element in sealed, fanless DC/DC module with forced-air or passive cooling. Use Value: RthJC = 1.7 °C/W allows direct mounting to aluminum housing, sustaining 45 W continuous power without thermal throttling. |
Use Scenario: Load switch and protection FET in smart battery packs for medical portable devices. IC Role / Device Role / Timing Role: Reverse polarity and overcurrent protection switch placed between battery cell stack and system load. Use Value: 40 V VDS rating and 60 A ID rating support 10–16 cell Li-ion stacks (up to 60 V), while 100 % UIS testing ensures survivability during hot-plug events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 3.2 mΩ @ 4.5 V; Qg = 20 nC; PowerPAK® SO-8 package (larger footprint, higher RthJA) | Lower current rating (40 A) and larger thermal resistance limit use in >30 A VRM phases | Preferred where SO-8 compatibility or lower gate charge is prioritized over ultimate RDS(on) and thermal performance |
| DMTH4007LPSQ-13 | RDS(on) = 2.8 mΩ @ 4.5 V; Qg = 26 nC; PowerDI™ 5060 package (exposed drain, similar size but different pinout) | Higher Qg increases gate drive loss at >1 MHz; different terminal layout requires PCB redesign | Selected when automotive AEC-Q101 qualification is mandatory, though SISS10DN-T1-GE3 is not AEC-Q101 rated |
Compared with IRLHS6342TRPBF and DMTH4007LPSQ-13, SISS10DN-T1-GE3 delivers the lowest RDS(on) × Qg product in its class and superior thermal resistance via the PowerPAK 1212-8S bottom-exposed drain, making it optimal for space-constrained, high-power-density computing and telecom power stages.
Availability
SISS10DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and embedded DC/DC modules requiring stable component supply, high-reliability screening, and long-term lifecycle support.
Supply support for SISS10DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SiSS series targets high-frequency, high-current power conversion applications, with SISS10DN-T1-GE3 specifically engineered for next-generation CPU/GPU VRMs and compact isolated/non-isolated DC/DC converters.
FAQ
What is the maximum continuous drain current rating for SISS10DN-T1-GE3 at TC = 70 °C?
The SISS10DN-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects package-limited conduction capability rather than silicon-limited current, and remains unchanged from the TC = 25 °C rating due to thermal design margin built into the PowerPAK 1212-8S construction.
Does SISS10DN-T1-GE3 have AEC-Q101 qualification for automotive use?
No, SISS10DN-T1-GE3 is not AEC-Q101 qualified. Vishay's official documentation and datasheet (S16-0219-Rev. A) list no automotive qualification for this part. For automotive-grade alternatives, consider Vishay's AQ-series MOSFETs such as the SQJQ480E, which carry full AEC-Q101 certification and similar 40 V/60 A specifications.
What is the gate threshold voltage range for SISS10DN-T1-GE3, and how does it affect 4.5 V logic-level drive?
The SISS10DN-T1-GE3 has a gate threshold voltage (VGS(th)) range of 1.1 V to 2.4 V at TJ = 25 °C. This ensures reliable turn-on with standard 4.5 V logic-level gate drivers, as the device achieves full enhancement well below VGS = 4.5 V - confirmed by RDS(on) = 3.60 mΩ max at VGS = 4.5 V and ID = 10 A, making SISS10DN-T1-GE3 suitable for 5 V and 3.3 V controller interfaces.
Can SISS10DN-T1-GE3 be used as a synchronous rectifier in a 1 MHz buck converter?
Yes, SISS10DN-T1-GE3 is explicitly designed for high-frequency synchronous rectification, with 23 nC typical gate charge at VGS = 4.5 V and optimized Qgd/Qgs ratio. Its 38 ns body diode reverse recovery time and low Crss (72 pF) support clean switching at 1 MHz, provided gate drive strength exceeds 2 A peak and layout minimizes parasitic inductance - both validated in Vishay's reference designs for VRMs.
What is the thermal resistance from junction-to-case (RthJC) for SISS10DN-T1-GE3, and how should it be used in thermal design?
The SISS10DN-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 1.7 °C/W, measured from junction to the bottom-side exposed drain paddle. In thermal design, this value must be used with the thermal resistance of the PCB copper or heatsink interface (e.g., thermal vias, solder thickness, TIM) to calculate total θJA; it is not interchangeable with RthJA (21 °C/W for t ≤ 10 s), which assumes no heatsinking.
SISS10DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3750 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS10DN-T1-GE3 FAQ
1.How can I place an order for SISS10DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS10DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS10DN-T1-GE3 reliable?
The price and inventory of SISS10DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS10DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS10DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS10DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS10DN-T1-GE3?
SISS10DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS10DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS10DN-T1-GE3?
For technical support, including SISS10DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS10DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS10DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS10DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS10DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS10DN-T1-GE3?
All SISS10DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS10DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS10DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS10DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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