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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS12DN-T1-GE3

Name: SISS12DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS12DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS12DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS12DN-T1-GE3.pdf

Description:: MOSFET N-CH 40V 37.5A/60A PPAK

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Product details

Overview

SISS12DN-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, delivering R_DS(on) = 1.98 mΩ at V_GS = 10 V and 2.74 mΩ at V_GS = 4.5 V, with 28.7 nC total gate charge and 60 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SISS12DN-T1-GE3 datasheet, SISS12DN-T1-GE3 pinout, SISS12DN-T1-GE3 application, or SISS12DN-T1-GE3 equivalent, this page provides verified electrical parameters, thermal resistance values (R_thJC = 1.5 °C/W), body diode characteristics (V_SD = 0.72 V at I_S = 5 A), and layout-critical package dimensions for PowerPAK 1212-8S.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its Q_gd/Q_gs ratio is optimized to minimize switching loss during hard-switched operation in buck converters and OR-ing circuits.

The device features 100 % R_g and UIS tested units, with a guaranteed V_GS(th) range of 1.1–2.4 V and low Crss/Ciss ratio (0.021–0.042), supporting stable gate drive under high dv/dt conditions in high-density power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC systems
R_DS(on) @ V_GS = 10 V	1.98 mΩ - Enables <1 W conduction loss at 60 A in thermally managed designs
R_DS(on) @ V_GS = 4.5 V	2.74 mΩ - Supports efficient operation with 5 V gate drive in logic-level control architectures
Q_g typ.	28.7 nC - Low gate charge reduces driver power requirement and enables >1 MHz switching
I_D continuous (T_C = 25 °C)	60 A - Sustains high-current output stages without external heatsink when mounted on copper-clad PCB
R_thJC max.	1.9 °C/W - Enables direct thermal path from die to PCB copper via exposed drain pad
V_SD @ I_S = 5 A	0.72 V - Low forward voltage improves efficiency in synchronous rectifier mode

Pinout & Package

PowerPAK® 1212-8S is a leadless, surface-mount package with an exposed copper drain pad on the bottom side. Dimensions: 3.3 mm × 3.3 mm × 0.75 mm (max). Thermal performance relies on soldering the drain pad directly to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-frequency switching
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to exposed bottom copper pad for optimal thermal and electrical conduction
G (pin 1 dot location)	Gate (G)	Single gate terminal located at top-left corner; requires controlled impedance routing to minimize ringing

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables 1.98 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint, reducing board area vs. SO-8 equivalents
Optimized Q_gd/Q_gs ratio	0.021–0.042 ensures clean turn-off with minimal Miller-induced shoot-through risk in half-bridge layouts
100 % R_g and UIS tested	Guarantees gate robustness and avalanche energy handling (E_AS = 45 mJ) for reliable operation under transient overload
Exposed drain thermal pad	Provides 1.5 °C/W junction-to-case thermal resistance, enabling >65 W power dissipation with minimal PCB copper
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Synchronous Rectification	Synchronous Buck Converter
Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., 48 V to 12 V telecom PSUs). IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: 0.72 V body diode forward voltage and 2.74 mΩ R_DS(on) at 4.5 V gate drive enable >97 % efficiency at full load.	Use Scenario: High-current power stage in point-of-load (POL) regulators for server CPUs and FPGAs. IC Role / Device Role / Timing Role: High-side or low-side switch operating at 300 kHz–1 MHz with tight duty cycle control. Use Value: 28.7 nC Q_g and low Crss support fast, low-loss transitions and reduced gate driver losses.
High Power Density DC/DC	OR-ing Circuit
Use Scenario: Compact 100 W+ DC/DC modules for industrial automation and embedded computing. IC Role / Device Role / Timing Role: Primary switching element where thermal management and board space are constrained. Use Value: 1.5 °C/W R_thJC allows direct mounting to 1 oz. copper thermal pad, eliminating need for discrete heatsinks.	Use Scenario: Redundant power supply backplane in telecom and datacom equipment. IC Role / Device Role / Timing Role: Unidirectional current path selector preventing reverse current flow between paralleled supplies. Use Value: Low R_DS(on) minimizes forward voltage drop (<30 mV at 30 A), reducing heat generation and improving system reliability.

Synchronous Rectification

Synchronous Buck Converter

Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., 48 V to 12 V telecom PSUs).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: 0.72 V body diode forward voltage and 2.74 mΩ R_DS(on) at 4.5 V gate drive enable >97 % efficiency at full load.

Use Scenario: High-current power stage in point-of-load (POL) regulators for server CPUs and FPGAs.

IC Role / Device Role / Timing Role: High-side or low-side switch operating at 300 kHz–1 MHz with tight duty cycle control.

Use Value: 28.7 nC Q_g and low Crss support fast, low-loss transitions and reduced gate driver losses.

High Power Density DC/DC

OR-ing Circuit

Use Scenario: Compact 100 W+ DC/DC modules for industrial automation and embedded computing.

IC Role / Device Role / Timing Role: Primary switching element where thermal management and board space are constrained.

Use Value: 1.5 °C/W R_thJC allows direct mounting to 1 oz. copper thermal pad, eliminating need for discrete heatsinks.

Use Scenario: Redundant power supply backplane in telecom and datacom equipment.

IC Role / Device Role / Timing Role: Unidirectional current path selector preventing reverse current flow between paralleled supplies.

Use Value: Low R_DS(on) minimizes forward voltage drop (<30 mV at 30 A), reducing heat generation and improving system reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR170DP-T1-GE3	R_DS(on) = 2.0 mΩ @ 10 V, larger PowerPAK 1212-8 package (3.3 × 3.3 mm same, but taller: 1.05 mm), higher Q_g = 34 nC	Same synchronous rectification use case but less suitable for ultra-thin modules due to height constraint	Select when higher avalanche rating (E_AS = 65 mJ) is required over minimal profile
IRLHS6342TRPBF	R_DS(on) = 2.3 mΩ @ 4.5 V, PowerPAIR® 3.3 × 3.3 mm package, Q_g = 24 nC, lower V_GS(th) (0.7–1.3 V)	Better suited for low-voltage gate drive (e.g., 3.3 V controllers), but lower ID rating (50 A vs. 60 A)	Select when driving from 3.3 V logic and marginally lower conduction loss is acceptable

Compared with SiR170DP-T1-GE3 and IRLHS6342TRPBF, SISS12DN-T1-GE3 offers the lowest R_DS(on) at 4.5 V (2.74 mΩ), best thermal resistance (1.5 °C/W), and smallest height-making it optimal for space-constrained, high-current synchronous rectifiers where thermal headroom is limited.

Availability

SISS12DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC converters, and OR-ing applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for SISS12DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.

The SISS12DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency power conversion where low R_DS(on), fast switching, and compact thermal design are critical.

FAQ

What is the maximum continuous drain current for SISS12DN-T1-GE3 at T_C = 70 °C?

The maximum continuous drain current for SISS12DN-T1-GE3 is 60 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal management using the exposed drain pad and sufficient copper area per Vishay's recommended pad layout in Application Note 826. The SISS12DN-T1-GE3 maintains this current capability up to 70 °C case temperature without derating, unlike ambient-limited ratings.

Does SISS12DN-T1-GE3 support 5 V gate drive in synchronous rectifier applications?

Yes, SISS12DN-T1-GE3 supports 5 V gate drive with R_DS(on) = 2.74 mΩ at V_GS = 4.5 V and I_D = 5 A, making it suitable for synchronous rectification in 5 V-controlled DC/DC stages. Its V_GS(th) range (1.1–2.4 V) ensures reliable turn-on with standard logic-level drivers, and the low Q_g (28.7 nC) minimizes gate drive power loss. The SISS12DN-T1-GE3 is widely used in such configurations per Vishay's application guidance.

What is the thermal resistance from junction to case (R_thJC) for SISS12DN-T1-GE3?

The maximum junction-to-case (drain) thermal resistance for SISS12DN-T1-GE3 is 1.9 °C/W, with a typical value of 1.5 °C/W, measured under steady-state conditions. This low R_thJC is enabled by the PowerPAK 1212-8S package's exposed copper drain pad, which must be soldered to a large PCB copper area for optimal thermal transfer. The SISS12DN-T1-GE3 leverages this path to dissipate up to 65.7 W at T_C = 25 °C.

Is SISS12DN-T1-GE3 suitable for OR-ing applications with reverse current protection?

Yes, SISS12DN-T1-GE3 is explicitly listed in its Applications section for OR-ing, leveraging its low R_DS(on) (1.98 mΩ) to minimize forward voltage drop and power loss when conducting forward current, and its body diode (V_SD = 0.72 V at 5 A) to block reverse current when biased off. The SISS12DN-T1-GE3's 100 % UIS testing further ensures robustness against transient reverse-bias stress in redundant supply systems.

What is the gate charge (Q_g) of SISS12DN-T1-GE3 at V_GS = 4.5 V?

The total gate charge (Q_g) of SISS12DN-T1-GE3 is 28.7 nC (typical) at V_GS = 4.5 V, V_DS = 20 V, and I_D = 10 A, as confirmed in the Specifications table. This low Q_g contributes to reduced switching losses and relaxed gate driver requirements in high-frequency applications. The SISS12DN-T1-GE3's Q_g value is validated across production lots and forms part of its Gen IV optimization for efficiency-critical power stages.

SISS12DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 37.5A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.98mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 4270 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS12DN-T1-GE3 FAQ

1.How can I place an order for SISS12DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS12DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS12DN-T1-GE3 reliable?

The price and inventory of SISS12DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS12DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS12DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS12DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS12DN-T1-GE3?

SISS12DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS12DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS12DN-T1-GE3?

For technical support, including SISS12DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS12DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS12DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS12DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS12DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS12DN-T1-GE3?

All SISS12DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS12DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS12DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS12DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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