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Vishay Siliconix SISS26LDN-T1-UE3
- Part No.:
- SISS26LDN-T1-UE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS26LDN-T1-UE3.pdf
- Description:
- N-CHANNEL 60 V (D-S) 150C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,561
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Product details
Overview
SISS26LDN-T1-UE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, delivering RDS(on) = 4.3 mΩ @ VGS = 10 V, Qg = 15.2 nC @ 4.5 V, and 81.2 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SISS26LDN-T1-UE3 datasheet, SISS26LDN-T1-UE3 pinout, SISS26LDN-T1-UE3 application, or SISS26LDN-T1-UE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100% Rg and UIS testing, and thermal performance with RthJC = 1.7 °C/W (typical) - critical for compact, high-power-density industrial and solar microinverter designs.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low gate charge and output capacitance trade-offs, enabling fast switching with minimized switching losses in hard-switched and synchronous rectifier topologies. Its optimized RDS(on) × Qoss FOM directly supports high-frequency operation up to 1 MHz in isolated DC/DC converters.
The device features a robust body diode with trr = 30 ns (typ.) and Qrr = 20 nC (typ.), supporting ZVS-capable designs and reducing commutation loss in bridge configurations. Thermal design is enabled by the exposed-drain PowerPAK 1212-8S package, offering low junction-to-case resistance and compatibility with standard PCB copper thermal pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage suitable for 48 V input systems and 24 V industrial bus rails |
| RDS(on) @ 10 V | 4.3 mΩ - enables <1 W conduction loss at 50 A, critical for high-current synchronous rectifiers |
| RDS(on) @ 4.5 V | 6.2 mΩ - ensures reliable turn-on with 5 V gate drivers in low-voltage control circuits |
| Qg @ 4.5 V | 15.2 nC - low gate charge reduces driver power and enables efficient 500 kHz–1 MHz switching |
| ID (continuous) | 81.2 A @ TC = 25 °C - supports high-current motor drive and battery switch applications without forced cooling |
| RthJC | 1.7 °C/W (typ.) - allows direct thermal coupling to heatsink or PCB copper, simplifying thermal management |
| trr / Qrr | 30 ns / 20 nC (typ.) - fast, low-charge body diode minimizes reverse recovery loss in half-bridge and LLC resonant converters |
Pinout & Package
PowerPAK® 1212-8S is a leadless, surface-mount package with exposed drain paddle on the bottom side. Dimensions: 3.3 mm × 3.3 mm × 0.75 mm (L × W × H). The package uses copper-exposed drain terminals for enhanced thermal and electrical performance; solder fillet at the edge is not required for reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 (D) | Drain | Four parallel drain terminals connected to exposed copper paddle - primary thermal path and high-current return |
| G (Pin 1 dot marker) | Gate | Single gate terminal located adjacent to Pin 1; requires controlled gate drive to avoid oscillation due to low Rg = 0.85 Ω (max) |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Enables industry-leading RDS(on) × Qoss FOM for reduced switching + conduction loss trade-off |
| 100 % Rg tested | Guarantees gate resistance ≤ 1.5 Ω, ensuring predictable gate drive timing and EMI control |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to IAS = 25 A and EAS = 31.2 mJ |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709E, supporting green manufacturing requirements |
| Alternate manufacturing location | SISS26LDN-T1-UE3 variant meets identical electrical, thermal, and reliability specs per Vishay composite qualification |
Applications
| Synchronous Rectifier in Isolated DC/DC Converters | Primary-Side Switch in Flyback/LLC Converters |
|---|---|
|
Use Scenario: Used as secondary-side synchronous rectifier in 60 W–300 W telecom and server PSUs operating at 300–1000 kHz. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and conduction loss; driven by controller's SR signal with precise timing alignment. Use Value: Achieves >1.2% efficiency gain over 40 V Schottky at 20 A load due to 4.3 mΩ RDS(on) and low Qrr. |
Use Scenario: Primary high-side switch in 100–500 W flyback or asymmetric half-bridge converters for industrial power supplies. IC Role / Device Role / Timing Role: High-current, high-voltage switching element handling full input power; operates under hard-switching conditions with 60 V rating margin. Use Value: Supports 81.2 A peak current capability and 25 A single-pulse avalanche rating, enabling robust start-up and overload protection. |
| Solar Microinverter Half-Bridge Leg | Industrial Motor Drive High-Side Switch |
|
Use Scenario: Upper switch in half-bridge inverter stage of 250–500 W photovoltaic microinverters with transformerless topology. IC Role / Device Role / Timing Role: Fast-switching, low-loss power switch synchronized with complementary lower device; body diode conducts during dead-time. Use Value: 30 ns trr and 20 nC Qrr minimize shoot-through risk and commutation loss, improving THD and efficiency at 20–50 kHz switching. |
Use Scenario: High-side switch in 3-phase BLDC or stepper motor gate driver modules for factory automation equipment. IC Role / Device Role / Timing Role: Handles bidirectional current during PWM commutation; must sustain repetitive UIS events during motor stall or reversal. Use Value: 100 % UIS tested to 25 A/31.2 mJ ensures field reliability under motor inductive kickback without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-GE3 | RDS(on) = 3.8 mΩ @ 10 V, Qg = 21.5 nC @ 10 V - lower RDS(on) but higher gate charge | Better conduction loss at high current; less suitable for >500 kHz due to higher Qg | Prefer when thermal headroom is limited and switching frequency ≤ 300 kHz |
| IRFH7107TRPBF | RDS(on) = 4.7 mΩ @ 10 V, Qg = 14.2 nC @ 10 V - slightly higher RDS(on), lower Qg | Marginally slower turn-on but better gate drive efficiency at 4.5 V logic levels | Prefer when gate drive voltage is constrained to 4.5 V and layout parasitics demand lowest possible Qg |
Compared with SiR626DP-T1-GE3 and IRFH7107TRPBF, SISS26LDN-T1-UE3 delivers the optimal balance of ultra-low RDS(on) × Qoss FOM and 4.5 V drive capability - making it uniquely suited for high-frequency, high-current synchronous rectification where both conduction and switching losses must be minimized simultaneously.
Availability
SISS26LDN-T1-UE3 is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, and high-density DC/DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across manufacturing lots.
Supply support for SISS26LDN-T1-UE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SISS26LDN-T1-UE3 belongs to Vishay's TrenchFET® Gen IV family - engineered specifically for high-frequency, high-current power conversion in space-constrained industrial, renewable energy, and computing applications.
FAQ
What is the maximum continuous drain current rating for SISS26LDN-T1-UE3 at 70 °C case temperature?
The SISS26LDN-T1-UE3 supports 65 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package and ensures safe operation under sustained high-power conditions without exceeding TJ = 150 °C. The 65 A value is confirmed in the datasheet's "Continuous drain current" row under TC = 70 °C condition.
Does SISS26LDN-T1-UE3 have a fully characterized body diode for synchronous rectifier use?
Yes, SISS26LDN-T1-UE3 includes a fully characterized body diode with trr = 30 ns (typ.), Qrr = 20 nC (typ.), and VSD = 0.75 V (typ.) at IS = 5 A. These parameters are measured and guaranteed per datasheet Section 1, enabling accurate modeling of reverse recovery behavior in synchronous rectifier and half-bridge applications - critical for minimizing commutation loss and EMI.
Is SISS26LDN-T1-UE3 compatible with standard reflow soldering profiles?
Yes, SISS26LDN-T1-UE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. The PowerPAK 1212-8S package is designed for standard PCB assembly; however, manual soldering with an iron is not recommended due to its leadless construction and exposed copper terminations, as noted in datasheet footnote e.
How does the "-UE3" suffix differ from "-GE3" in the SISS26LDN ordering matrix?
The "-UE3" suffix denotes an alternate manufacturing location for SISS26LDN-T1-UE3, while "-GE3" indicates the standard production location. Both variants share identical electrical specifications, thermal performance, reliability data, and package dimensions per Vishay's composite qualification process documented in datasheet revision S24-0724-Rev. B. No design or layout changes are needed when substituting between them.
What is the gate threshold voltage range for SISS26LDN-T1-UE3, and how does it affect 4.5 V drive?
The gate threshold voltage VGS(th) for SISS26LDN-T1-UE3 is specified from 1.0 V to 2.5 V at ID = 250 μA. This range ensures strong enhancement-mode turn-on with 4.5 V gate drive, delivering RDS(on) = 6.2 mΩ (max) at ID = 10 A - confirming robust operation with standard 5 V logic-level controllers without requiring level-shifting circuitry.
SISS26LDN-T1-UE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 23.7A (Ta), 81.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1980 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS26LDN-T1-UE3 FAQ
1.How can I place an order for SISS26LDN-T1-UE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS26LDN-T1-UE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS26LDN-T1-UE3 reliable?
The price and inventory of SISS26LDN-T1-UE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS26LDN-T1-UE3 is usually 5 days.
3.What payment methods are accepted for SISS26LDN-T1-UE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS26LDN-T1-UE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS26LDN-T1-UE3?
SISS26LDN-T1-UE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS26LDN-T1-UE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS26LDN-T1-UE3?
For technical support, including SISS26LDN-T1-UE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS26LDN-T1-UE3 requirements.
6.How does Aetrix verify that SISS26LDN-T1-UE3 is sourced from the original manufacturer or authorized distributors?
All SISS26LDN-T1-UE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS26LDN-T1-UE3 meets industry standards.
7.What is the process for return or replacement of SISS26LDN-T1-UE3?
All SISS26LDN-T1-UE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS26LDN-T1-UE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS26LDN-T1-UE3 part is unused and in its original packaging.
Return procedure for SISS26LDN-T1-UE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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