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Vishay Siliconix SISS28DN-T1-GE3
- Part No.:
- SISS28DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS28DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 60A PPAK1212-8S
- Quantity:
- Payment:
- Shipping:
Inventory:5,980
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Product details
Overview
SISS28DN-T1-GE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, delivering RDS(on) = 1.52 mΩ at VGS = 10 V and 2.24 mΩ at VGS = 4.5 V, with 60 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification in compact DC/DC converters.
For engineers reviewing the SISS28DN-T1-GE3 datasheet, SISS28DN-T1-GE3 pinout, SISS28DN-T1-GE3 application, or SISS28DN-T1-GE3 equivalent, key selection criteria include low gate charge (Qg = 21.8 nC @ 4.5 V), fast switching (tr = 27 ns @ VGEN = 4.5 V), robust UIS rating, and lead-free/halogen-free compliance for high-density power stages.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low RDS(on) while maintaining excellent Qgd/Qgs ratio (0.043–0.085) and low gate resistance (Rg = 0.2–1.4 Ω), enabling reduced switching losses in high-frequency synchronous buck topologies. It supports 100% Rg and UIS testing per production lot.
The device features a thermally enhanced PowerPAK® 1212-8S leadless package with exposed copper drain pads on bottom side, delivering RthJC = 1.7 °C/W (typ.) and RthJA = 21 °C/W (t ≤ 10 s), and integrates a low-VSD body diode (0.73 V typ. @ IS = 5 A) with trr = 36 ns for efficient reverse recovery in synchronous rectifier operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage suitable for 12 V input bus and 5/3.3 V output synchronous buck stages. |
| RDS(on) | 1.52 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 60 A, critical for VRM and high-power-density DC/DC. |
| Qg | 21.8 nC @ VGS = 4.5 V - Low gate charge reduces driver power and enables efficient operation with 4.5 V gate drive (e.g., from integrated controller). |
| ID (cont) | 60 A @ TC = 25 °C - High current capability supports single-device solutions in 50–100 W load switches and sync rectifiers. |
| tr/tf | 27 ns / 10 ns @ VGEN = 4.5 V - Fast switching minimizes overlap loss and improves efficiency above 500 kHz. |
| VGS(th) | 1.0–2.0 V - Ensures reliable turn-on with standard logic-level gate drivers and avoids false triggering under noise. |
| Qrr | 29 nC - Low reverse recovery charge reduces body diode loss during dead-time conduction in synchronous rectification. |
Pinout & Package
SISS28DN-T1-GE3 uses the PowerPAK® 1212-8S surface-mount, leadless package (3.3 mm × 3.3 mm × 0.75 mm), featuring dual-side thermal and electrical connectivity: top-side source/gate terminals and bottom-side exposed drain copper for low-inductance, high-current paths and enhanced thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four bottom-exposed drain pads provide low-impedance thermal path to PCB ground plane and minimize RthJC. |
| G (pin 1 dot side) | Gate (G) | Single gate terminal located adjacent to source pins-optimized layout minimizes gate loop inductance for stable high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on) × Qg figure-of-merit (FOM) for minimal conduction + switching loss trade-off. |
| Optimized Qgd/Qgs ratio | 0.043–0.085 ensures stable Miller plateau behavior and robust immunity to dv/dt-induced turn-on in hard-switching. |
| 100% Rg and UIS tested | Guarantees gate robustness and avalanche energy handling (EAS = 45 mJ) without derating in real-world transient conditions. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements for environmentally compliant industrial and computing designs. |
| PowerPAK® 1212-8S package | Enables >2× current density vs. SO-8, with 1.7 °C/W junction-to-case thermal resistance for direct heatsink coupling. |
Applications
| Synchronous Buck Converter | VRM / CPU Core Power Delivery |
|---|---|
|
Use Scenario: Primary high-side or low-side switch in 500 kHz–1 MHz multiphase buck converter supplying GPU or FPGA core voltage. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop and reduce heat generation. Use Value: Achieves >95% efficiency at 40 A output by cutting conduction loss by 60% versus 3 mΩ alternatives, enabled by 1.52 mΩ RDS(on) and 29 nC Qrr. |
Use Scenario: Output stage MOSFET in server-grade VRM delivering 1–2 V @ up to 120 A per phase with tight regulation. IC Role / Device Role: High-current, low-RDS(on) power switch operating at elevated ambient temperature (70 °C). Use Value: Sustains 60 A continuous current at TC = 70 °C due to low RDS(on) temperature coefficient and 1.7 °C/W RthJC, eliminating need for external heatsinks. |
| High-Density DC/DC Module | Battery Management System (BMS) Load Switch |
|
Use Scenario: Integrated into 10 mm × 10 mm isolated/non-isolated DC/DC module for telecom or networking equipment. IC Role / Device Role: Main power switch in compact, high-frequency (1–2 MHz) topology where board space and thermal performance are constrained. Use Value: 3.3 mm × 3.3 mm footprint and 0.75 mm height allow placement directly under inductor; low Qg enables use of small gate driver ICs. |
Use Scenario: Bidirectional load switch controlling power path between Li-ion battery pack and system load in portable medical or industrial devices. IC Role / Device Role: N-channel high-side or low-side switch with integrated body diode used for reverse-current protection and controlled power sequencing. Use Value: Body diode VSD = 0.73 V (typ.) and trr = 36 ns enable fast, low-loss reverse conduction during hot-swap events without external diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | Higher VDS = 40 V, RDS(on) = 1.85 mΩ @ 10 V, larger PowerPAK® 5x6 package (5.0 mm × 6.0 mm). | Better suited for 24 V input systems requiring higher voltage margin; less optimal for space-constrained 12 V buck stages. | Select when system requires >30 V blocking capability or higher avalanche energy (EAS = 110 mJ); avoid if board area is limited to ≤3.5 mm² per FET. |
| IRLHS6342TRPBF | Same VDS = 25 V, but RDS(on) = 2.2 mΩ @ 4.5 V, Qg = 27 nC, in smaller 2 mm × 2 mm PQFN package. | Lower current rating (ID = 30 A @ TC = 25 °C) and higher RthJA = 40 °C/W limit thermal headroom in high-power density designs. | Prefer for ultra-compact, lower-current (<25 A) applications where footprint is primary constraint; not recommended for sustained >40 A loads. |
Compared with SiR872DP-T1-GE3 and IRLHS6342TRPBF, SISS28DN-T1-GE3 offers the best balance of ultra-low RDS(on), compact 3.3 mm × 3.3 mm footprint, and proven 60 A capability-making it the preferred choice for 12 V input, high-current synchronous buck converters where thermal and space constraints are co-dominant.
Availability
SISS28DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high power density DC/DC, and VRM applications requiring stable component supply, long-term manufacturability, and full RoHS/halogen-free compliance.
Supply support for SISS28DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SiSS28DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-frequency, high-current synchronous rectification and DC/DC conversion in computing, telecom, and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for SISS28DN-T1-GE3 at 70 °C case temperature?
The SISS28DN-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability and is validated across production lots with 100% UIS and Rg testing-enabling robust operation in thermally demanding VRM and DC/DC modules without derating.
Does SISS28DN-T1-GE3 support 4.5 V gate drive, and what is its RDS(on) under that condition?
Yes, SISS28DN-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) = 2.24 mΩ (max.) at VGS = 4.5 V and ID = 10 A. This makes SISS28DN-T1-GE3 compatible with common controller ICs that output 4.5 V gate drive, such as those found in integrated DrMOS and multiphase PWM controllers used in modern CPU/GPU VRMs.
What is the thermal resistance from junction to case (RthJC) for SISS28DN-T1-GE3, and how does it impact heatsinking?
The SISS28DN-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 1.7 °C/W, with a maximum of 2.2 °C/W. This low value-enabled by the PowerPAK® 1212-8S package's exposed bottom-side drain pads-allows direct thermal coupling to the PCB ground plane or external heatsink, supporting high-power operation without additional thermal interface materials in many 60 A applications.
Is SISS28DN-T1-GE3 suitable for synchronous rectification, and what body diode parameters support this use?
Yes, SISS28DN-T1-GE3 is explicitly designed for synchronous rectification. Its body diode exhibits VSD = 0.73 V (typ.) at IS = 5 A and fast reverse recovery with trr = 36 ns (typ.) and Qrr = 29 nC (typ.), minimizing conduction and switching losses during dead-time conduction-key for efficiency gains over Schottky diodes in 500 kHz–1 MHz buck converters.
What packaging and environmental compliance does SISS28DN-T1-GE3 meet?
SISS28DN-T1-GE3 is supplied in tape-and-reel format (T1) and meets lead (Pb)-free and halogen-free requirements per JEDEC JS709C and RoHS Directive 2011/65/EU. The PowerPAK® 1212-8S package is RoHS-compliant, with no exemptions required, and supports standard lead-free reflow profiles up to 260 °C peak temperature as defined in Vishay document 73257.
SISS28DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.52mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 4.5 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3640 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS28DN-T1-GE3 FAQ
1.How can I place an order for SISS28DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS28DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS28DN-T1-GE3 reliable?
The price and inventory of SISS28DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS28DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS28DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS28DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS28DN-T1-GE3?
SISS28DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS28DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS28DN-T1-GE3?
For technical support, including SISS28DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS28DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS28DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS28DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS28DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS28DN-T1-GE3?
All SISS28DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS28DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS28DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS28DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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