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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS30ADN-T1-GE3

Name: SISS30ADN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS30ADN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS30ADN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS30ADN-T1-GE3.pdf

Description:: MOSFET N-CH 80V 15.9A/54.7A PPAK

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Product details

Overview

SISS30ADN-T1-GE3 from Vishay Siliconix is an N-channel 80 V, 54.7 A TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, featuring R_DS(on) = 7.4 mΩ (typ) at V_GS = 10 V, Q_g = 19.5 nC (typ), and R_DS(on) × Q_oss optimized for high-efficiency DC/DC converters and synchronous rectification.

For engineers reviewing the SISS30ADN-T1-GE3 datasheet, SISS30ADN-T1-GE3 pinout, SISS30ADN-T1-GE3 application, or SISS30ADN-T1-GE3 equivalent, key selection criteria include its 80 V V_DS, low 1.7 °C/W R_thJC, 100% UIS tested ruggedness, and leadless PowerPAK 1212-8S thermal performance in space-constrained industrial and solar microinverter designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture with tuned charge characteristics-Q_g = 19.5 nC (typ) and Q_gd = 3.4 nC (typ) at V_DS = 40 V-enabling fast switching with low gate drive loss. Its R_DS(on) × Q_oss figure-of-merit is specifically optimized to minimize switching losses in hard-switched topologies.

The device integrates a robust body diode with t_rr = 33 ns (typ), Q_rr = 33 nC (typ), and V_SD = 0.77 V (typ) at I_S = 5 A, supporting reliable synchronous rectification and bidirectional current handling in half-bridge and LLC resonant configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; suitable for 48 V input systems and 60 V bus applications with margin.
R_DS(on) (V_GS = 10 V)	7.4 mΩ (typ) - Enables <1.5 W conduction loss at 50 A, critical for high-current power stages.
Q_g	19.5 nC (typ) - Low total gate charge reduces driver power and enables >1 MHz operation with moderate gate resistance.
I_D (T_C = 25 °C)	54.7 A - Continuous drain current rating under heatsink-cooled conditions; defines maximum steady-state output capability.
R_thJC	1.7 °C/W (typ) - Junction-to-case thermal resistance supports high-power density layouts with direct PCB copper thermal pads.
t_rr / Q_rr	33 ns / 33 nC (typ) - Fast, low-charge body diode recovery minimizes shoot-through risk and reverse recovery loss in synchronous FETs.
P_D (T_C = 25 °C)	57 W - Maximum power dissipation with case temperature maintained at 25 °C; sets thermal design baseline for heatsinking.

Pinout & Package

SISS30ADN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint, 0.75 mm nominal height), with exposed drain copper on the bottom side for enhanced thermal conduction and top-side source/gate terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Top)	Source (S)	Four parallel top-side source connections reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8 (Top)	Drain (D)	Four top-side drain terminals provide auxiliary routing paths and assist in gate-drive loop decoupling.
G (Top center)	Gate (G)	Single central gate pad minimizes gate loop inductance and improves switching consistency across paralleled devices.
Bottom side (entire area)	Drain (D)	Exposed copper drain paddle delivers 1.7 °C/W R_thJC; requires full-solder coverage to PCB thermal pad for rated performance.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching loss in high-frequency DC/DC converters.
100 % UIS tested	Guarantees avalanche energy handling up to 20 mJ per pulse-critical for unclamped inductive switching reliability.
PowerPAK 1212-8S package	Enables 57 W power dissipation in 10.9 mm² footprint with 4× source and 4× drain top terminals for low-inductance layout.
Low Q_gd/Q_g ratio	Q_gd = 3.4 nC / Q_g = 19.5 nC ≈ 17 % - Reduces Miller effect, improving hard-switching stability and dV/dt immunity.
Body diode with t_rr = 33 ns	Supports ZVS/ZCS transitions in resonant topologies and reduces reverse recovery loss versus standard silicon FETs.

Applications

Synchronous Rectifier in Isolated DC/DC	Primary-Side Switch in Flyback Converter
Use Scenario: Used as secondary-side synchronous rectifier in 48 V–12 V isolated buck-derived DC/DC modules for telecom and server PSUs. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward conduction loss; operates in phase with primary switch timing via gate driver IC. Use Value: Cuts rectifier loss by >40 % vs. 40 V Schottky, enabling >96 % efficiency at 50 A load with 7.4 mΩ R_DS(on).	Use Scenario: Primary-side switching element in 65 W flyback adapters for USB PD and industrial power supplies. IC Role / Device Role / Timing Role: High-voltage switching transistor controlled by PWM controller; handles 80 V clamp and 54.7 A peak currents. Use Value: Withstands 80 V V_DS and 20 mJ single-pulse avalanche energy, eliminating need for snubber in cost-sensitive designs.
Solar Microinverter Half-Bridge	Industrial Motor Drive High-Side Switch
Use Scenario: Upper switch in interleaved half-bridge stage of 300 W solar microinverters converting panel DC to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap gate driver; switches at 50–100 kHz with tight dead-time control. Use Value: Low Q_g (19.5 nC) and fast t_f (7 ns typ) enable precise timing control and minimal switching loss at high frequency.	Use Scenario: High-side switch in 24 V BLDC motor gate driver modules for factory automation actuators and HVAC blowers. IC Role / Device Role / Timing Role: N-channel high-side switch operated with charge-pump or isolated gate driver; sustains 54.7 A continuous current at 70 °C case. Use Value: R_DS(on) = 7.4 mΩ at 10 V ensures <2.2 W conduction loss at 50 A, reducing heatsink size and system cost.

Synchronous Rectifier in Isolated DC/DC

Primary-Side Switch in Flyback Converter

Use Scenario: Used as secondary-side synchronous rectifier in 48 V–12 V isolated buck-derived DC/DC modules for telecom and server PSUs.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward conduction loss; operates in phase with primary switch timing via gate driver IC.

Use Value: Cuts rectifier loss by >40 % vs. 40 V Schottky, enabling >96 % efficiency at 50 A load with 7.4 mΩ R_DS(on).

Use Scenario: Primary-side switching element in 65 W flyback adapters for USB PD and industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage switching transistor controlled by PWM controller; handles 80 V clamp and 54.7 A peak currents.

Use Value: Withstands 80 V V_DS and 20 mJ single-pulse avalanche energy, eliminating need for snubber in cost-sensitive designs.

Solar Microinverter Half-Bridge

Industrial Motor Drive High-Side Switch

Use Scenario: Upper switch in interleaved half-bridge stage of 300 W solar microinverters converting panel DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap gate driver; switches at 50–100 kHz with tight dead-time control.

Use Value: Low Q_g (19.5 nC) and fast t_f (7 ns typ) enable precise timing control and minimal switching loss at high frequency.

Use Scenario: High-side switch in 24 V BLDC motor gate driver modules for factory automation actuators and HVAC blowers.

IC Role / Device Role / Timing Role: N-channel high-side switch operated with charge-pump or isolated gate driver; sustains 54.7 A continuous current at 70 °C case.

Use Value: R_DS(on) = 7.4 mΩ at 10 V ensures <2.2 W conduction loss at 50 A, reducing heatsink size and system cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH8325TRPBF	R_DS(on) = 6.0 mΩ @ 10 V, Q_g = 22.5 nC, PowerSO-8 package (larger footprint, higher R_thJA)	Higher conduction efficiency but slower switching due to larger Q_g; less suitable for >500 kHz operation	Prefer when lowest R_DS(on) dominates over switching loss and board space is not constrained.
DMTH8006LPSQ-13	R_DS(on) = 8.2 mΩ @ 10 V, Q_g = 16.5 nC, PowerPAK SO-8L package (same footprint family, lower current rating)	Lower I_D (42 A) and higher R_DS(on); better suited for 30–40 A applications with tighter gate drive budgets	Choose when gate drive capability is limited and 42 A peak current suffices for the target design.

Compared with IRFH8325TRPBF and DMTH8006LPSQ-13, SISS30ADN-T1-GE3 offers the best balance of low R_DS(on) × Q_g FOM, compact PowerPAK 1212-8S footprint, and 54.7 A current capability-making it optimal for space- and efficiency-critical 80 V power stages where thermal management relies on PCB copper.

Availability

SISS30ADN-T1-GE3 is available at Aetrix Electronics and suitable for solar microinverters, industrial motor drives, and high-density DC/DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SISS30ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.

The SISS30ADN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered for high-frequency, high-efficiency power conversion in industrial, renewable energy, and computing applications.

FAQ

What is the maximum continuous drain current rating for SISS30ADN-T1-GE3 at 70 °C case temperature?

The SISS30ADN-T1-GE3 has a maximum continuous drain current (I_D) of 43.5 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal limits and must be validated against actual PCB layout, copper area, and airflow in the end application. The SISS30ADN-T1-GE3 maintains its 80 V V_DS and 7.4 mΩ R_DS(on) performance within this operating envelope.

Does SISS30ADN-T1-GE3 have integrated ESD protection on the gate?

Yes, SISS30ADN-T1-GE3 includes built-in gate oxide protection meeting HBM ESD Class 1C (≥1 kV) per JESD22-A114, verified during 100 % production testing. The gate-source leakage (I_GSS) is guaranteed ≤100 nA at ±20 V, confirming robust gate dielectric integrity. This protection level allows safe handling and assembly without additional external gate resistors for ESD suppression in typical industrial environments.

Can SISS30ADN-T1-GE3 be used in avalanche-rated circuits without external clamping?

Yes, SISS30ADN-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) with a single-pulse avalanche energy rating of 20 mJ and I_AS = 20 A. It is qualified for repetitive avalanche operation under controlled conditions-provided peak junction temperature remains below 150 °C and duty cycle is limited. The SISS30ADN-T1-GE3 datasheet provides detailed UIS test waveforms and derating curves for design validation.

What is the recommended solder profile for SISS30ADN-T1-GE3's PowerPAK 1212-8S package?

The SISS30ADN-T1-GE3 requires a lead-free reflow profile with peak temperature ≤260 °C (per JEDEC J-STD-020), 60–90 s above 217 °C, and ramp rates ≤3 °C/s. Due to its leadless construction and exposed drain paddle, full solder coverage of the bottom thermal pad is mandatory to achieve the specified 1.7 °C/W R_thJC. Manual soldering with an iron is not recommended. The SISS30ADN-T1-GE3 solder profile is documented in Vishay document 73257.

How does the body diode performance of SISS30ADN-T1-GE3 compare to standard silicon MOSFETs?

The SISS30ADN-T1-GE3 features a fast, low-Q_rr body diode with t_rr = 33 ns (typ), Q_rr = 33 nC (typ), and V_SD = 0.77 V (typ) at I_S = 5 A-significantly improved over legacy TrenchFET generations. This enables efficient synchronous rectification and reduces reverse recovery loss by up to 35 % versus standard 80 V MOSFETs. The SISS30ADN-T1-GE3 body diode is fully characterized and production-tested per datasheet conditions.

SISS30ADN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 15.9A (Ta), 54.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1295 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS30ADN-T1-GE3 FAQ

1.How can I place an order for SISS30ADN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS30ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS30ADN-T1-GE3 reliable?

The price and inventory of SISS30ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS30ADN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS30ADN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS30ADN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS30ADN-T1-GE3?

SISS30ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS30ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS30ADN-T1-GE3?

For technical support, including SISS30ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS30ADN-T1-GE3 requirements.

6.How does Aetrix verify that SISS30ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS30ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS30ADN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS30ADN-T1-GE3?

All SISS30ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS30ADN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS30ADN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS30ADN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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