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Vishay Siliconix SISS30DN-T1-GE3
- Part No.:
- SISS30DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS30DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 80V 15.9A/54.7A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:12,687
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Product details
Overview
SISS30DN-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, delivering RDS(on) = 8.25 mΩ at VGS = 10 V, Qg = 19.6 nC, and 54.7 A continuous drain current - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SISS30DN-T1-GE3 datasheet, SISS30DN-T1-GE3 pinout, SISS30DN-T1-GE3 application, or SISS30DN-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100% Rg and UIS testing, and thermal performance with RthJC = 1.7 °C/W for high-power-density board designs.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon architecture to minimize conduction and switching losses simultaneously, with gate charge profile tuned specifically for ZVS and hard-switched topologies. Its low Qgd/Qg ratio (≈23%) supports fast, controllable turn-off critical for high-frequency operation up to 1 MHz.
The device integrates a robust body diode with trr = 40 ns (typ.) and Qrr = 47 nC (typ.), enabling reliable reverse recovery in synchronous rectifier configurations without external Schottky supplementation. Thermal design is anchored by a leadless PowerPAK 1212-8S package with exposed-drain copper on the bottom side for direct PCB heat spreading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports 48 V input bus systems with 20% margin for voltage transients in industrial and solar microinverter applications. |
| RDS(on) max @ VGS = 10 V | 8.25 mΩ - enables <1.5 W conduction loss at 40 A, reducing thermal load in compact 12–24 V DC/DC converters. |
| Qg typ. | 19.6 nC - allows efficient gate drive with standard 1-A peak drivers at 500 kHz switching, minimizing driver power dissipation. |
| ID continuous @ TC = 25 °C | 54.7 A - sustains full-load operation in motor drive half-bridges without forced air, when mounted on ≥1" × 1" FR4 with 2 oz Cu. |
| RthJC max. | 2.2 °C/W - ensures junction temperature stays ≤125 °C under 40 W dissipation with minimal heatsinking, supporting high-reliability industrial use. |
| VGS(th) | 2.0–3.8 V - compatible with 3.3 V and 5 V logic-level gate drivers without level-shifting, simplifying control circuitry. |
| EAS | 20 mJ - withstands single-pulse avalanche energy events common during inductive load switching or fault conditions. |
Pinout & Package
PowerPAK® 1212-8S is a surface-mount, leadless, thermally enhanced package with 3.3 mm × 3.3 mm footprint and 0.75 mm nominal height. The drain terminals are exposed on the bottom side for direct thermal coupling to PCB copper; source and gate connect via top-side solder pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Top) | Source | Four parallel top-side S pads reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 (Top) | Drain | Four top-side D pads provide auxiliary routing access and assist in gate-drive loop layout optimization. |
| Bottom center area | Drain (main) | Large exposed copper drain pad dominates thermal path to PCB - accounts for >90% of total heat transfer in typical layout. |
| Pin 1 (dot-marked) | Gate | Single top-side G pad located adjacent to source pins to minimize gate loop inductance and suppress oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers best-in-class RDS(on) × Qoss FOM (≈0.24 Ω·nC), directly lowering switching losses in high-frequency SMPS. |
| 100% Rg and UIS tested | Ensures gate resistance consistency (<0.3–1.5 Ω) and ruggedness against unclamped inductive switching stress in motor drives. |
| Low VSD body diode | VSD = 0.77 V (typ.) at IS = 5 A enables efficient freewheeling in synchronous buck converters without reverse recovery penalty. |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and Vishay's "Green" standard, supporting environmentally compliant industrial and solar product certifications. |
| PowerPAK 1212-8S package | Reduces package inductance vs. SO-8 by >40%, improving EMI behavior and enabling faster switching edge control. |
Applications
| Synchronous Rectifier in Isolated DC/DC | Primary-Side Switch in Flyback Converter |
|---|---|
|
Use Scenario: Used as secondary-side switch in 48 V–12 V isolated DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward conduction loss and eliminate reverse recovery loss. Use Value: Achieves >95% efficiency at full load by cutting conduction loss by 40% vs. 40 V Schottky, while eliminating diode ringing. |
Use Scenario: Primary switch in 24 V input flyback converters powering industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: High-voltage switching element handling 80 V breakdown margin across 24 V ±25% line variation and surge. Use Value: Enables 500 kHz operation with <25 ns fall time, reducing transformer size and improving transient response over older 100 V MOSFETs. |
| Solar Microinverter Half-Bridge | BLDC Motor Drive High-Side Switch |
|
Use Scenario: Upper switch in interleaved half-bridge stage of single-phase 250 W solar microinverter. IC Role / Device Role / Timing Role: Fast-switching, low-loss power switch operating in hard-switched mode with bidirectional current capability. Use Value: Supports >98% peak conversion efficiency due to low RDS(on) × Qg and tight VGS(th) distribution, minimizing gate drive loss. |
Use Scenario: High-side switch in 24 V BLDC motor driver for HVAC actuators and robotic joints. IC Role / Device Role / Timing Role: N-channel MOSFET driven by bootstrap gate driver in three-phase inverter leg. Use Value: Withstands 54.7 A peak phase current and 20 mJ avalanche energy, eliminating need for external snubbers in 300 W motor loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470TRPBF | RDS(on) = 9.5 mΩ @ 10 V; Qg = 22.5 nC; SO-8 package; RthJA = 62 °C/W (vs. 26 °C/W for SISS30DN) | Higher thermal resistance limits power density; unsuitable for >20 A continuous in same PCB area without heatsink. | Choose only if SO-8 footprint compatibility is mandatory and thermal headroom exists. |
| DMTH8006LSD-13 | RDS(on) = 6.8 mΩ @ 10 V; Qg = 25.5 nC; PowerDI 5060 package; lower RthJC (1.4 °C/W) but larger 5.0 mm × 6.0 mm footprint. | Superior RDS(on) benefits ultra-low-loss designs, but 5× larger area conflicts with space-constrained microinverters. | Prefer when lowest conduction loss is critical and board area permits larger package. |
Compared with IRF7470TRPBF and DMTH8006LSD-13, SISS30DN-T1-GE3 offers optimal balance of low RDS(on), moderate Qg, and smallest thermal footprint - making it ideal for high-density, high-frequency 80 V switching where both efficiency and layout area are constrained.
Availability
SISS30DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, solar microinverter, and industrial motor drive applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SISS30DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SISS30DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-efficiency power conversion in space-constrained industrial, solar, and automotive-qualified systems.
FAQ
What is the maximum continuous drain current rating for SISS30DN-T1-GE3 at 70 °C case temperature?
The SISS30DN-T1-GE3 supports 43.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal resistance limitations and must be validated against actual PCB layout and ambient conditions. SISS30DN-T1-GE3 achieves this with RthJC = 1.7 °C/W, enabling robust operation in thermally demanding environments such as enclosed motor drives.
Does SISS30DN-T1-GE3 require a gate resistor for stable switching in a 500 kHz DC/DC converter?
Yes - SISS30DN-T1-GE3 benefits from an external gate resistor (Rg) to dampen ringing and control dV/dt, especially given its low intrinsic gate resistance (0.3–1.5 Ω typ./max). For 500 kHz operation with a 1-A peak driver, a 5–10 Ω series Rg optimizes switching speed versus EMI. SISS30DN-T1-GE3's Qg = 19.6 nC ensures minimal driver power loss even with conservative Rg values.
Can SISS30DN-T1-GE3 replace a standard SO-8 MOSFET without PCB redesign?
No - SISS30DN-T1-GE3 uses the PowerPAK® 1212-8S package (3.3 mm × 3.3 mm), which is not pin-compatible with SO-8 (4.9 mm × 6.0 mm). Layout revision is required to accommodate the smaller footprint, different pad geometry, and bottom-side thermal pad. SISS30DN-T1-GE3 demands specific solder stencil design and reflow profile per Vishay doc# 73257 to ensure reliable interconnection to the exposed drain.
What is the body diode reverse recovery charge (Qrr) of SISS30DN-T1-GE3, and why does it matter in synchronous rectification?
The SISS30DN-T1-GE3 has Qrr = 47 nC (typ.) at IF = 10 A, dI/dt = 100 A/μs, and TJ = 25 °C. In synchronous rectification, low Qrr minimizes reverse recovery current spikes and associated switching loss and EMI. SISS30DN-T1-GE3's Qrr is ~35% lower than legacy 80 V MOSFETs, directly improving light-load efficiency and reducing gate driver stress during dead-time transitions.
Is SISS30DN-T1-GE3 suitable for automotive applications per AEC-Q101?
No - SISS30DN-T1-GE3 is not AEC-Q101 qualified. It is rated for industrial temperature range (−55 °C to +150 °C) and intended for commercial/industrial applications including solar microinverters and motor drives. For automotive use, designers should select Vishay's AEC-Q101-qualified equivalents such as SQJQ800EP or SI7862DP-T1-GE3, which undergo additional stress testing and lot traceability per automotive requirements. SISS30DN-T1-GE3 remains appropriate for non-automotive industrial systems requiring high reliability.
SISS30DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.9A (Ta), 54.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1666 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS30DN-T1-GE3 FAQ
1.How can I place an order for SISS30DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS30DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS30DN-T1-GE3 reliable?
The price and inventory of SISS30DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS30DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS30DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS30DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS30DN-T1-GE3?
SISS30DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS30DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS30DN-T1-GE3?
For technical support, including SISS30DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS30DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS30DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS30DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS30DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS30DN-T1-GE3?
All SISS30DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS30DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS30DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS30DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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