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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS30LDN-T1-GE3

Name: SISS30LDN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS30LDN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS30LDN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS30LDN-T1-GE3.pdf

Description:: MOSFET N-CH 80V 16A/55.5A PPAK

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Product details

Overview

SISS30LDN-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, with R_DS(on) = 8.5 mΩ @ V_GS = 10 V, Q_g = 15.2 nC @ V_GS = 4.5 V, and 55.5 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.

For engineers reviewing the SISS30LDN-T1-GE3 datasheet, SISS30LDN-T1-GE3 pinout, SISS30LDN-T1-GE3 application, or SISS30LDN-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100 % R_g and UIS tested reliability, and thermal performance with R_thJC = 1.7 °C/W (typical) for high-power-density industrial and solar microinverter designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve a tuned balance between conduction loss (R_DS(on)) and switching loss (Q_g, Q_oss, C_iss). Its gate threshold voltage (V_GS(th) = 1–2.5 V) enables robust 4.5 V logic-level drive compatibility while maintaining tight control over turn-on behavior across temperature.

The device integrates a fast body diode with t_rr = 35 ns (typ.) and Q_rr = 49 nC (typ.), supporting high-frequency hard-switched and synchronous rectifier topologies. Its PowerPAK 1212-8S leadless package delivers low-inductance source connections and enhanced thermal transfer via exposed drain copper on the bottom side.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports primary-side switching in 48 V input DC/DC converters and solar microinverters up to 60 V bus.
R_DS(on) max @ 10 V	8.5 mΩ - enables ≤ 4.7 W conduction loss at 55.5 A, critical for thermally constrained PCB layouts.
R_DS(on) max @ 4.5 V	12.2 mΩ - ensures reliable enhancement-mode operation with standard 5 V microcontroller GPIO or PWM drivers.
Q_g typ @ 4.5 V	15.2 nC - reduces gate drive power and enables efficient operation at ≥ 500 kHz switching frequencies.
I_D continuous @ T_C = 25 °C	55.5 A - supports high-current motor drive and battery switch applications without external heatsinking.
R_thJC (typ.)	1.7 °C/W - allows direct thermal coupling to copper planes or heatsinks, enabling > 40 W steady-state dissipation.
Body diode V_SD	0.77 V (typ.) - lowers reverse recovery losses in synchronous rectification vs. discrete Schottky alternatives.

Pinout & Package

PowerPAK® 1212-8S is a surface-mount, leadless, 3.3 mm × 3.3 mm package with exposed drain pad on the bottom side. The top-side terminals are arranged in two rows of four pins; pins 1–4 are Source, pins 5–8 are Drain, and pin 2 is Gate (confirmed by top-view diagram and labeling in datasheet S25-0354).

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 4	Source	Low-inductance return path for high di/dt currents; electrically tied to exposed drain pad via internal substrate connection.
2	Gate	Control terminal with R_g = 0.82 Ω (typ.); requires <16 nC gate charge for full enhancement at 4.5 V.
5–8	Drain	High-current output node; connected to large-area exposed copper on bottom side for thermal and electrical conduction.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching + conduction loss trade-off in high-frequency SMPS.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy tolerance (E_AS = 20 mJ) in unclamped inductive switching.
Exposed drain thermal pad	Enables direct thermal interface to PCB ground plane or heatsink, achieving R_thJC = 1.7 °C/W (typ.) without solder paste voiding concerns.
Low Q_gd/Q_g ratio	Q_gd = 3.9 nC / Q_g = 15.2 nC → ~26 % - improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments.

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side synchronous rectifier in isolated 12 V/48 V output LLC resonant converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-V_DS power switch replacing Schottky diodes to reduce forward voltage drop and improve efficiency at light-to-full load. Use Value: Achieves >0.5 % system efficiency gain over 40 V Schottky due to 0.77 V V_SD and low R_DS(on) conduction loss.	Use Scenario: High-side switch in non-isolated buck converters powering FPGA core rails in industrial edge controllers. IC Role / Device Role / Timing Role: Main power switch handling 55.5 A peak current with fast 6 ns rise time and 10 ns turn-on delay for precise PWM control. Use Value: Enables 95 %+ efficiency at 500 kHz with minimal gate drive loss thanks to 15.2 nC Q_g at 4.5 V.
Solar Microinverter	Motor Drive Switch
Use Scenario: Half-bridge leg in single-phase transformerless solar microinverters interfacing 30–60 V PV strings. IC Role / Device Role / Timing Role: High-reliability, avalanche-rated switch managing bidirectional current flow and reverse recovery during MPPT modulation. Use Value: 20 mJ E_AS rating and 35 ns t_rr support safe operation under partial shading-induced transients without snubbers.	Use Scenario: Phase-leg switch in 24 V BLDC motor drives for automated guided vehicles (AGVs) and HVAC blowers. IC Role / Device Role / Timing Role: Fast-switching, low-R_DS(on) MOSFET delivering 51.8 A continuous source-drain diode current for regenerative braking. Use Value: Body diode V_SD = 0.77 V minimizes heat generation during freewheeling, reducing thermal stress on PCB copper.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side synchronous rectifier in isolated 12 V/48 V output LLC resonant converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Low-V_DS power switch replacing Schottky diodes to reduce forward voltage drop and improve efficiency at light-to-full load.

Use Value: Achieves >0.5 % system efficiency gain over 40 V Schottky due to 0.77 V V_SD and low R_DS(on) conduction loss.

Use Scenario: High-side switch in non-isolated buck converters powering FPGA core rails in industrial edge controllers.

IC Role / Device Role / Timing Role: Main power switch handling 55.5 A peak current with fast 6 ns rise time and 10 ns turn-on delay for precise PWM control.

Use Value: Enables 95 %+ efficiency at 500 kHz with minimal gate drive loss thanks to 15.2 nC Q_g at 4.5 V.

Solar Microinverter

Motor Drive Switch

Use Scenario: Half-bridge leg in single-phase transformerless solar microinverters interfacing 30–60 V PV strings.

IC Role / Device Role / Timing Role: High-reliability, avalanche-rated switch managing bidirectional current flow and reverse recovery during MPPT modulation.

Use Value: 20 mJ E_AS rating and 35 ns t_rr support safe operation under partial shading-induced transients without snubbers.

Use Scenario: Phase-leg switch in 24 V BLDC motor drives for automated guided vehicles (AGVs) and HVAC blowers.

IC Role / Device Role / Timing Role: Fast-switching, low-R_DS(on) MOSFET delivering 51.8 A continuous source-drain diode current for regenerative braking.

Use Value: Body diode V_SD = 0.77 V minimizes heat generation during freewheeling, reducing thermal stress on PCB copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 11.5 mΩ @ 10 V; Q_g = 22 nC @ 4.5 V; TO-252 package; R_thJA = 62 °C/W (typ.)	Higher thermal resistance limits power density; less suitable for compact microinverter modules.	Prefer SISS30LDN-T1-GE3 where board space and thermal performance are constrained.
DMTH8006LSD-13	R_DS(on) = 7.2 mΩ @ 10 V; Q_g = 20.5 nC @ 4.5 V; PowerDI 5060 package; no 100 % UIS test documented	Lower R_DS(on) but higher Q_g increases gate drive loss; lacks explicit UIS qualification.	Choose SISS30LDN-T1-GE3 when avalanche ruggedness and low Q_g are prioritized over minimal R_DS(on).

Compared with IRF7470PBF and DMTH8006LSD-13, SISS30LDN-T1-GE3 offers superior thermal performance (R_thJC = 1.7 °C/W), lower gate charge at 4.5 V, and guaranteed UIS testing - making it optimal for high-reliability, high-frequency, space-constrained industrial and renewable energy systems.

Availability

SISS30LDN-T1-GE3 is available at Aetrix Electronics and suitable for solar microinverter, industrial motor drive, and high-efficiency DC/DC converter applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SISS30LDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and automotive markets.

The SISS30LDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in space-constrained power conversion systems including solar, computing, and motor control.

FAQ

What is the maximum continuous drain current rating for SISS30LDN-T1-GE3 at 70 °C case temperature?

The SISS30LDN-T1-GE3 supports 44 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8S package under sustained high-power operation and must be validated against actual board layout and airflow conditions. The SISS30LDN-T1-GE3 datasheet confirms this value under steady-state conditions with proper PCB copper area.

Does SISS30LDN-T1-GE3 support 4.5 V gate drive in practical applications?

Yes, SISS30LDN-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 12.2 mΩ (max) and Q_g = 15.2 nC (typ.) at that voltage. Its V_GS(th) range of 1–2.5 V ensures strong enhancement even with marginal gate drive margins, making it compatible with standard 5 V logic and microcontroller outputs. The SISS30LDN-T1-GE3 has been validated in synchronous rectifier designs operating exclusively at 4.5 V gate bias.

What is the thermal resistance from junction to case (R_thJC) for SISS30LDN-T1-GE3?

The SISS30LDN-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 1.7 °C/W, with a maximum of 2.2 °C/W, as measured from the silicon die to the exposed drain pad. This low value is enabled by the PowerPAK 1212-8S package's direct copper thermal path and is critical for high-power-density designs. The SISS30LDN-T1-GE3 thermal performance is documented in the Thermal Resistance Ratings section of Vishay's S25-0354 datasheet.

Is SISS30LDN-T1-GE3 qualified for avalanche energy handling?

Yes, SISS30LDN-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy (E_AS) of 20 mJ at T_J = 25 °C, with I_AS = 20 A. This qualification ensures robustness in flyback, LLC, and other topologies where inductive energy must be safely absorbed during switching transitions. The SISS30LDN-T1-GE3 datasheet explicitly lists these parameters in the Absolute Maximum Ratings table.

What is the body diode reverse recovery time (t_rr) of SISS30LDN-T1-GE3?

The SISS30LDN-T1-GE3 body diode exhibits a typical reverse recovery time (t_rr) of 35 ns under conditions of I_F = 10 A, di/dt = 100 A/μs, and T_J = 25 °C. This fast recovery supports high-frequency synchronous rectification with minimal switching loss and voltage overshoot. The SISS30LDN-T1-GE3 t_rr and associated Q_rr = 49 nC (typ.) are specified in the Dynamic Characteristics table of the official datasheet.

SISS30LDN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 55.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2070 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS30LDN-T1-GE3 FAQ

1.How can I place an order for SISS30LDN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS30LDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS30LDN-T1-GE3 reliable?

The price and inventory of SISS30LDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS30LDN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS30LDN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS30LDN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS30LDN-T1-GE3?

SISS30LDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS30LDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS30LDN-T1-GE3?

For technical support, including SISS30LDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS30LDN-T1-GE3 requirements.

6.How does Aetrix verify that SISS30LDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS30LDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS30LDN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS30LDN-T1-GE3?

All SISS30LDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS30LDN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS30LDN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS30LDN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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