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Vishay Siliconix SISS30LDN-T1-UE3
- Part No.:
- SISS30LDN-T1-UE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS30LDN-T1-UE3.pdf
- Description:
- N-CHANNEL 80 V (D-S) MOSFET 150
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
SiSS30LDN-T1-UE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, delivering RDS(on) = 8.5 mΩ @ VGS = 10 V, Qg = 15.2 nC (typ.), and 55.5 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SiSS30LDN-T1-UE3 datasheet, SiSS30LDN-T1-UE3 pinout, SiSS30LDN-T1-UE3 application, or SiSS30LDN-T1-UE3 equivalent, this device supports critical design decisions in solar microinverters, motor drive switches, and battery load control where low RDS(on) × Qoss figure-of-merit and 100% UIS testing are required.
Technical Context
This MOSFET uses trench-based silicon architecture with gate oxide engineered for stable threshold voltage (VGS(th) = 1–2.5 V) and minimized temperature coefficient (ΔVGS(th)/TJ = −4.6 mV/°C). Its dynamic parameters include Ciss = 2070 pF, Coss = 205 pF, and Crss = 14 pF at VDS = 40 V, enabling fast switching with controlled EMI in hard-switched topologies.
The device integrates a robust body diode with trr = 35–76 ns and Qrr = 49–98 nC, supporting bidirectional conduction in synchronous rectifier configurations. Thermal performance is defined by RthJC = 1.7 °C/W (typ.) and RthJA = 21 °C/W (t ≤ 10 s), validated on 1" × 1" FR4 board per JEDEC JESD51-7.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - maximum blocking voltage for primary-side switch operation in 48 V input DC/DC converters and solar MPPT stages |
| RDS(on) @ 10 V | 8.5 mΩ max - enables <1.5 W conduction loss at 40 A, critical for thermal management in compact power modules |
| RDS(on) @ 4.5 V | 12.2 mΩ max - ensures reliable turn-on with 5 V gate drivers in logic-level applications like battery protection circuits |
| Qg | 15.2 nC typ. - low gate charge reduces driver power demand and switching losses in high-frequency (>500 kHz) converters |
| ID (continuous) | 55.5 A @ TC = 25 °C - supports high-current output stages without external heatsinking in thermally constrained PCB layouts |
| EAS | 20 mJ - avalanche-rated for unclamped inductive switching events in motor drive H-bridge freewheeling paths |
| RthJC | 1.7 °C/W typical - allows direct thermal coupling to copper planes or heatsinks for junction temperature control below 150 °C |
Pinout & Package
PowerPAK® 1212-8S is a leadless surface-mount package (3.3 mm × 3.3 mm footprint) with exposed drain paddle on bottom side; no plating on singulated copper tip; solder fillet not required for functional interconnection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four drain terminals connected to exposed bottom paddle - primary thermal and current path to PCB copper |
| G (pin 1 dot location) | Gate (G) | Single gate terminal located adjacent to pin 1 marking; requires controlled trace routing to minimize ringing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Enables simultaneous optimization of RDS(on), Qg, and Qoss - critical for ZVS/ZCS resonant converter efficiency |
| RDS(on) × Qoss FOM | Minimized to reduce switching energy loss in high-frequency DC/DC stages without sacrificing conduction loss |
| 100% UIS tested | Guarantees ruggedness against unclamped inductive switching stress in motor drive and solenoid control |
| 100% Rg tested | Ensures consistent gate drive timing and eliminates batch variation in turn-on/turn-off delays |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709E - suitable for industrial and consumer end-equipment |
Applications
| Synchronous Rectifier | Primary-Side Switch |
|---|---|
|
Use Scenario: Secondary-side rectification in isolated LLC resonant converters for server PSUs. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diodes, driven synchronously by controller's gate signal. Use Value: Reduces forward voltage drop from ~0.5 V to <0.05 V at 30 A, cutting conduction loss by >70 % vs. diode solution. |
Use Scenario: High-side switch in 48 V input buck-boost converter for telecom base station power management. IC Role / Device Role / Timing Role: Main power switch operating at 300–600 kHz with 10 V gate drive. Use Value: Achieves <0.8 W total switching + conduction loss at 25 A, enabling >97 % peak efficiency. |
| Solar Microinverter | Motor Drive Switch |
|
Use Scenario: DC link switching stage in single-phase transformerless microinverters for residential PV systems. IC Role / Device Role / Timing Role: Bidirectional switch handling AC line reversal and MPPT tracking current. Use Value: Body diode trr = 35 ns and Qrr = 49 nC minimize reverse recovery loss during polarity transitions. |
Use Scenario: Half-bridge leg in 24 V BLDC motor driver for HVAC blowers and industrial fans. IC Role / Device Role / Timing Role: Low-side switch conducting up to 50 A peak with PWM at 20 kHz. Use Value: RDS(on) = 8.5 mΩ limits I²R loss to <2.1 W at 50 A, allowing operation without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP026N08N | RDS(on) = 2.6 mΩ @ 10 V, larger PowerSO-8 package (5 mm × 6 mm), higher Qg = 42 nC | Better conduction loss but slower switching; suited for lower-frequency (<100 kHz) high-current inverters | Choose when thermal margin exists and lowest RDS(on) dominates over switching loss. |
| ON Semiconductor NTMFS5C675NL | RDS(on) = 6.7 mΩ @ 10 V, same PowerPAK 1212-8S footprint, Qg = 21.5 nC, rated 80 V | Lower RDS(on) but higher gate charge increases driver loss; identical mounting and layout compatibility | Prefer for ultra-low conduction loss designs where gate drive capability supports higher Qg. |
Compared with IPP026N08N and NTMFS5C675NL, SiSS30LDN-T1-UE3 offers the best balance of low RDS(on) × Qg FOM (≈129 mΩ·nC) and compact 3.3 mm × 3.3 mm footprint - ideal for space-constrained, high-frequency DC/DC and motor control designs requiring both efficiency and layout density.
Availability
SiSS30LDN-T1-UE3 is available at Aetrix Electronics and suitable for solar microinverters, motor drive switches, and battery load control requiring stable component supply across production lifecycles.
Supply support for SiSS30LDN-T1-UE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SiSS30LDN-T1-UE3 belongs to Vishay's TrenchFET® Gen IV family, designed specifically for high-frequency, high-efficiency power conversion in computing, renewable energy, and industrial motor control systems.
FAQ
What is the maximum continuous drain current rating for SiSS30LDN-T1-UE3 at 70 °C case temperature?
The SiSS30LDN-T1-UE3 supports 44 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction; actual usable current depends on PCB copper area, airflow, and ambient temperature. The device maintains RDS(on) stability up to TJ = 150 °C, making SiSS30LDN-T1-UE3 suitable for thermally demanding environments when properly heatsinked.
Does SiSS30LDN-T1-UE3 support 4.5 V gate drive in logic-level applications?
Yes, SiSS30LDN-T1-UE3 is fully characterized at VGS = 4.5 V, with RDS(on) = 12.2 mΩ (max) and Qg = 15.2 nC (typ.). Its VGS(th) range of 1–2.5 V ensures strong enhancement-mode turn-on with standard 5 V microcontroller outputs or gate drivers. This makes SiSS30LDN-T1-UE3 appropriate for battery-powered load switches and portable equipment where 3.3 V or 5 V logic compatibility is required.
What is the thermal resistance from junction to case (RthJC) for SiSS30LDN-T1-UE3?
The SiSS30LDN-T1-UE3 has a typical junction-to-case thermal resistance (RthJC) of 1.7 °C/W, with a maximum of 2.2 °C/W. This value is measured from the silicon die to the exposed drain paddle - the primary thermal path. Effective heat transfer requires soldering the drain paddle to a large copper pour or thermal pad on the PCB; RthJC does not include PCB or heatsink interface resistance. For thermal design, SiSS30LDN-T1-UE3 enables junction temperatures below 125 °C at 40 A with minimal external cooling.
Is SiSS30LDN-T1-UE3 suitable for avalanche energy handling in inductive switching?
Yes, SiSS30LDN-T1-UE3 is 100% tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy (EAS) of 20 mJ at TJ = 25 °C. It also supports single-pulse avalanche current (IAS) of 20 A with L = 0.1 mH. These ratings validate its robustness in motor drive freewheeling, relay driving, and other inductive load switching where voltage spikes exceed VDS. Designers must ensure SOA compliance and avoid repetitive avalanche conditions.
What is the gate-source leakage current specification for SiSS30LDN-T1-UE3?
The gate-source leakage current (IGSS) for SiSS30LDN-T1-UE3 is specified as ≤100 nA at VGS = ±20 V and TJ = 25 °C. This low leakage ensures minimal gate drive current requirement and stable biasing in high-impedance gate networks. The parameter is guaranteed across temperature and voltage extremes, supporting reliable operation in precision gate-controlled applications such as analog switches and low-power load management circuits using SiSS30LDN-T1-UE3.
SISS30LDN-T1-UE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 55.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2070 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS30LDN-T1-UE3 FAQ
1.How can I place an order for SISS30LDN-T1-UE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS30LDN-T1-UE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS30LDN-T1-UE3 reliable?
The price and inventory of SISS30LDN-T1-UE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS30LDN-T1-UE3 is usually 5 days.
3.What payment methods are accepted for SISS30LDN-T1-UE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS30LDN-T1-UE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS30LDN-T1-UE3?
SISS30LDN-T1-UE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS30LDN-T1-UE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS30LDN-T1-UE3?
For technical support, including SISS30LDN-T1-UE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS30LDN-T1-UE3 requirements.
6.How does Aetrix verify that SISS30LDN-T1-UE3 is sourced from the original manufacturer or authorized distributors?
All SISS30LDN-T1-UE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS30LDN-T1-UE3 meets industry standards.
7.What is the process for return or replacement of SISS30LDN-T1-UE3?
All SISS30LDN-T1-UE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS30LDN-T1-UE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS30LDN-T1-UE3 part is unused and in its original packaging.
Return procedure for SISS30LDN-T1-UE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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