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Vishay Siliconix SISS32ADN-T1-GE3
- Part No.:
- SISS32ADN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS32ADN-T1-GE3.pdf
- Description:
- MOSFET N-CH 80V 17.4A/63A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:12,776
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Product details
Overview
SISS32ADN-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, with RDS(on) = 7.3 mΩ @ VGS = 10 V, Qg = 18.5 nC (typ.), and 63 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SISS32ADN-T1-GE3 datasheet, SISS32ADN-T1-GE3 pinout, SISS32ADN-T1-GE3 application, or SISS32ADN-T1-GE3 equivalent, key selection criteria include its low RDS(on)–Qoss figure-of-merit, 100% Rg and UIS testing, and thermal performance with RthJC = 1.5 °C/W (typ.) for high-power density designs.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve a tuned RDS(on)–Qoss FOM for reduced switching losses in hard-switched topologies. Its gate threshold voltage (VGS(th) = 2–3.6 V) and low gate resistance (Rg = 0.3–1.6 Ω) support fast, controlled turn-on/off with minimal drive loss.
The device features a robust body diode with trr = 37–74 ns and Qrr = 35–70 nC, enabling reliable operation in synchronous rectifier configurations. Thermal design is supported by a low junction-to-case resistance (1.5 °C/W typ.) and validated solder interconnection on FR4 boards per JEDEC J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports input rails up to 60 V nominal in industrial DC/DC and solar microinverter applications |
| RDS(on) max @ 10 V | 7.3 mΩ - enables <1 W conduction loss at 30 A, critical for high-current synchronous rectifiers |
| Qg typ. | 18.5 nC - reduces gate drive power and allows use with low-current controllers in compact converters |
| ID continuous @ TC = 25 °C | 63 A - delivers high output current capability without external heatsinking in thermally managed PCB layouts |
| RthJC max | 1.9 °C/W - ensures efficient heat transfer to copper planes or heatsinks, supporting >50 W dissipation at ΔT = 100 °C |
| Ciss | 1520 pF - influences gate drive loop stability and EMI behavior in high-frequency (>500 kHz) switching designs |
| VSD @ IS = 5 A | 0.75–1.1 V - low forward drop improves efficiency in bidirectional load switch and reverse polarity protection circuits |
Pinout & Package
Package: PowerPAK® 1212-8S - leadless, surface-mount, 3.3 mm × 3.3 mm footprint with exposed drain paddle on bottom side for enhanced thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connect to internal die drain metallization; tied to exposed bottom paddle for thermal conduction |
| Gate (G) | Gate (G) | Single gate terminal located at corner; requires controlled layout to minimize ringing and EMI in high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers industry-leading RDS(on)–Qoss FOM for minimized total switching loss in 300–1000 kHz converters |
| 100% Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress |
| Low Qgd/Qg ratio (≈0.23) | Reduces Miller-induced shoot-through risk and improves controllability during hard commutation |
| Exposed drain paddle | Enables direct thermal path to PCB ground plane, achieving ≤1.9 °C/W junction-to-case resistance |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc#99912) |
Applications
| Synchronous Rectifier in Isolated DC/DC | Primary-Side Switch in Flyback Converter |
|---|---|
Use Scenario: Used on secondary side of 48 V–12 V isolated flyback or LLC converter to replace Schottky diode. IC Role / Device Role / Timing Role: N-channel power MOSFET operating in synchronous rectification mode, driven by controller's SR signal with precise timing relative to transformer reset. Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency from 92% to 95.5% at 20 A output. |
Use Scenario: High-side switch in 24 V input flyback powering industrial IoT sensor node. IC Role / Device Role / Timing Role: Primary-side power switch handling 63 A peak current at 100 kHz, controlled by PWM IC with integrated gate driver. Use Value: Low RDS(on) and Qg enable >90% efficiency at 30 W with minimal heatsink, meeting EN 62368-1 thermal limits. |
| Solar Microinverter Half-Bridge Leg | Motor Drive High-Side Load Switch |
Use Scenario: Upper switch in half-bridge stage of single-phase 300 W solar microinverter interfacing PV panel to grid. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in high-side position, requiring bootstrap gate drive and low Qrr body diode. Use Value: 37 ns body diode trr and low Qrr prevent cross-conduction loss and reduce EMI during dead-time transitions. |
Use Scenario: High-side battery disconnect switch in 24 V BLDC motor control module for automated guided vehicle. IC Role / Device Role / Timing Role: Load switch managing 50 A continuous motor startup surge, controlled via logic-level gate driver. Use Value: 63 A rating and 120 A pulsed capability handle locked-rotor current without derating; RDS(on) < 8 mΩ limits voltage drop to <0.4 V at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 8.5 mΩ @ 10 V; Qg = 22 nC; TO-252 package; RthJA = 62 °C/W | Higher thermal resistance limits power density; unsuitable for compact 1212-footprint layouts | Choose when board space allows DPAK and cost sensitivity outweighs thermal performance needs. |
| DMTH8008LPSQ-13 | RDS(on) = 7.0 mΩ @ 10 V; Qg = 20.5 nC; PowerDI® 5060 package; RthJC = 2.0 °C/W | Slightly lower RDS(on) but higher Qg and marginally worse thermal resistance than SISS32ADN-T1-GE3 | Prefer for automotive-qualified designs requiring AEC-Q101 compliance; otherwise SISS32ADN-T1-GE3 offers better FOM. |
Compared with IRF7470PBF and DMTH8008LPSQ-13, SISS32ADN-T1-GE3 delivers the lowest RDS(on)–Qoss FOM and best junction-to-case thermal resistance (1.5 °C/W typ.), making it optimal for space-constrained, high-efficiency industrial power stages where thermal management and switching loss are critical.
Availability
SISS32ADN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, solar microinverter, and motor drive applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SISS32ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SISS32ADN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-efficiency power conversion in industrial, renewable energy, and motor control systems.
FAQ
What is the maximum continuous drain current for SISS32ADN-T1-GE3 at case temperature of 70 °C?
The maximum continuous drain current for SISS32ADN-T1-GE3 is 50.3 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® 1212-8S package and must be verified against actual PCB copper area and airflow in the final design. SISS32ADN-T1-GE3 maintains RDS(on) stability across this range due to its TrenchFET® Gen IV process.
Does SISS32ADN-T1-GE3 support logic-level gate drive?
SISS32ADN-T1-GE3 has a gate threshold voltage (VGS(th)) of 2–3.6 V, enabling turn-on with 3.3 V or 5 V logic-level drivers. However, full enhancement and minimum RDS(on) require VGS ≥ 7.5 V (7.3 mΩ max at 10 V, 8.7 mΩ max at 7.5 V). For robust operation, SISS32ADN-T1-GE3 should be driven with ≥8 V gate voltage in high-current applications.
What is the body diode reverse recovery time (trr) of SISS32ADN-T1-GE3, and why does it matter?
The body diode reverse recovery time (trr) of SISS32ADN-T1-GE3 is 37–74 ns at TJ = 25 °C, IF = 10 A, and di/dt = 100 A/μs. This low trr minimizes switching loss and voltage overshoot during commutation in synchronous rectifier and half-bridge topologies. In SISS32ADN-T1-GE3, fast trr directly contributes to its suitability for high-frequency solar microinverters.
Is SISS32ADN-T1-GE3 suitable for avalanche-rated applications?
Yes - SISS32ADN-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 20 mJ and single-pulse avalanche current (IAS) of 20 A, with L = 0.1 mH. These ratings are validated per JEDEC JESD24-1 and confirm ruggedness under unclamped inductive switching. SISS32ADN-T1-GE3 is appropriate for flyback and resonant converters where avalanche stress may occur during startup or fault conditions.
What PCB pad layout is recommended for SISS32ADN-T1-GE3 in PowerPAK® 1212-8S?
Vishay recommends the pad layout detailed in Application Note 826 (doc#72597): 0.094" × 0.152" (2.39 mm × 3.86 mm) for the central drain paddle, with 0.039" × 0.068" (0.99 mm × 1.725 mm) for each of the eight perimeter terminals. Thermal vias under the drain paddle (≥6×0.3 mm) are strongly advised. SISS32ADN-T1-GE3 requires reflow per JEDEC J-STD-020, and manual soldering is not recommended.
SISS32ADN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 17.4A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1520 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 65.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS32ADN-T1-GE3 FAQ
1.How can I place an order for SISS32ADN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS32ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS32ADN-T1-GE3 reliable?
The price and inventory of SISS32ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS32ADN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS32ADN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS32ADN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS32ADN-T1-GE3?
SISS32ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS32ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS32ADN-T1-GE3?
For technical support, including SISS32ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS32ADN-T1-GE3 requirements.
6.How does Aetrix verify that SISS32ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS32ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS32ADN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS32ADN-T1-GE3?
All SISS32ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS32ADN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS32ADN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS32ADN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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